JP2010267965A - 薄膜太陽電池 - Google Patents
薄膜太陽電池 Download PDFInfo
- Publication number
- JP2010267965A JP2010267965A JP2010110092A JP2010110092A JP2010267965A JP 2010267965 A JP2010267965 A JP 2010267965A JP 2010110092 A JP2010110092 A JP 2010110092A JP 2010110092 A JP2010110092 A JP 2010110092A JP 2010267965 A JP2010267965 A JP 2010267965A
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- JP
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- Prior art keywords
- solar cell
- substrate glass
- cell according
- glass
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 39
- 239000011521 glass Substances 0.000 claims abstract description 168
- 239000000758 substrate Substances 0.000 claims abstract description 145
- 230000009477 glass transition Effects 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 47
- 239000011734 sodium Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 34
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 21
- 229910001415 sodium ion Inorganic materials 0.000 claims description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 6
- 229910004613 CdTe Inorganic materials 0.000 claims description 5
- 229910001414 potassium ion Inorganic materials 0.000 claims description 5
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 230000007613 environmental effect Effects 0.000 claims description 3
- 239000002346 layers by function Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
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- 239000010703 silicon Substances 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 150000001768 cations Chemical class 0.000 claims description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 claims 2
- 239000005038 ethylene vinyl acetate Substances 0.000 claims 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims 2
- 239000000470 constituent Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 18
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 229910052798 chalcogen Inorganic materials 0.000 description 6
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
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- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910000323 aluminium silicate Inorganic materials 0.000 description 3
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- 238000010549 co-Evaporation Methods 0.000 description 3
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- 238000009792 diffusion process Methods 0.000 description 3
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
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- 239000005361 soda-lime glass Substances 0.000 description 3
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- -1 K It means that 2 O Chemical compound 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
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- 239000007864 aqueous solution Substances 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
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- JTXMVXSTHSMVQF-UHFFFAOYSA-N 2-acetyloxyethyl acetate Chemical compound CC(=O)OCCOC(C)=O JTXMVXSTHSMVQF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
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- 229910052783 alkali metal Inorganic materials 0.000 description 1
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- 150000001340 alkali metals Chemical class 0.000 description 1
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- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
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- 239000002800 charge carrier Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 231100001010 corrosive Toxicity 0.000 description 1
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- 238000004070 electrodeposition Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000001453 impedance spectrum Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000011020 pilot scale process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
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- 238000007650 screen-printing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
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- 239000012808 vapor phase Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3605—Coatings of the type glass/metal/inorganic compound
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3649—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer made of metals other than silver
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3678—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/11—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen
- C03C3/112—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/0092—Compositions for glass with special properties for glass with improved high visible transmittance, e.g. extra-clear glass
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- H—ELECTRICITY
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
【解決手段】少なくとも1つのNa2O含有多成分基板ガラスを有する薄膜太陽電池によって解決される。
【選択図】なし
Description
− B2O3 1質量%未満の、BaO 1質量%未満の、及びCaO+SrO+ZnO 計3質量%未満の基板ガラス成分の含有量、
− 0.95より大きい基板ガラス成分(Na2O+K2O)/(MgO+CaO+SrO+BaO)のモル比(すなわち、基板ガラスは、少なくともNa2O又はK2O及び少なくともMgO又はCaO又はSrO又はBaOを含有する)、
− 7より小さい基板ガラス成分SiO2/Al2O3のモル比(すなわち、基板ガラスはSiO2及びAl2O3を含有する)、
− 550℃より高い、特に600℃より高い基板ガラスのガラス転移温度Tg(DIN52324に従った1014.5dPasのガラス粘度での温度)。
SiO2 63〜67.5
B2O3 0
Al2O3 10〜12.5
Na2O 8.5〜15.5
K2O 2.5〜4.0
MgO 3.0〜9.0
BaO 0
CaO+SrO+ZnO 0〜2.5
TiO2+ZrO2 0.5〜1.5
CeO2 0.02〜0.5
As2O3+Sb2O3 0〜0.4
SnO2 0〜1.5
F 0.05〜2.6であって、
その際、基板ガラス成分の以下のモル比が適用される:
SiO2/Al2O3 5.0〜6.8
Na2O/K2O 2.1〜6.2
Al2O3/K2O 2.5〜5.0
Al2O3/Na2O 0.6〜1.5
(Na2O+K2O)/(MgO+CaO+SrO) 0.95〜6.5。
SiO2 63〜67.5
B2O3 0
Al2O3 10〜12.5
Na2O 8.5〜17
K2O 2.5〜4.0
MgO 3.0〜9.0
BaO 0
CaO+SrO+ZnO 0〜2.5
MgO+CaO+SrO+BaO 3以上
TiO2+ZrO2 0〜5、特に0〜4、有利に0.25〜1.5
CeO2 0〜0.5、特に0.02〜0.5
As2O3+Sb2O3 0〜0.4
SnO2 0〜1.5
F 0〜3、特に0.05〜2.6であって、
その際、基板ガラス成分の以下のモル比が適用される:
SiO2/Al2O3 >5、
Na2O/K2O 2.1〜6.2
Al2O3/K2O 2.5〜5.0
Al2O3/Na2O 0.6〜1.5
(Na2O+K2O)/(MgO+CaO+SrO) >0.95
イオン交換のこれらの特性は、本発明によるこれらの太陽電池の耐破損性カバーガラスのために利用することもでき、その際、比較的小さいナトリウムイオンが比較的大きいカリウムイオンで交換されることによって表面で圧縮応力が生み出され、これは透明度を変えずにカバーガラスの機械的強度を著しく改善する。
円筒状太陽電池の場合、太陽電池の円筒状基板ガラスの外径は、好ましくは5〜100mmであり、且つ、円筒状基板ガラスの壁の厚さは、好ましくは0.5〜10mmである。
基板ガラスに薄膜/薄膜束の形で塗布されたこれらの化合物半導体は、重要な必要条件、例えばCIGSの場合、三元化合物の混合によって、太陽光スペクトルに非常に良く整合された禁制帯(1.0<Eg<2.0eV)と、太陽電池におけるその使用のための入射光の高い吸収(吸収係数>2×104cm-1)を満たす。
変化し易いCu(In1-xGax)(S1-ySey)2組成物の多結晶薄膜/薄膜束は、原則的に、一連の方法(例えば元素の同時蒸着法、後続の反応性ガス工程を伴うスパッタリング法、CVD法、MOCVD法、共蒸発法、カルコゲン雰囲気中での後続の加熱工程を伴う電着法又は液体堆積法等)によって多段階で製造されることができる。そのようなCIGS膜/膜束は、真性p型伝導を有する。そのような材料系でのp/n接合は、次いで薄いバッファー層(例えば数ナノメートルの厚さのCdS層など)と、続けて堆積されたn型伝導性の透明酸化物(TCO=Transparent Conductive Oxides、例えばZnO又はZnO(Al))を導入することによって形成される。寄生吸収を回避するために、バッファー層は非常に薄く形作られており、その一方で、TCO層は、可能な限り損失のない電流出力を保証するために、付加的に高い電気伝導率を有していなければならない。
パイロット規模又は生産規模で製造されたCu(In1-xGax)(S1-ySey)2セルの効率は、今日では10〜15%の間で変動する。モノリシックに統合された直列接続による個々の太陽電池から成る通常のモジュールフォーマットは、60×120cm2のオーダーサイズを有し、層(厚さ、組成)の均一性をモジュール面全体にわたって保証する。
Tgより低い処理温度は、基板ガラスへの、それに従って層系への応力の導入も、迅速な冷却によって防止し、通常これは、CIGS被覆処理の場合に当てはまる。
ガラス転移温度(Tg)のみならず、軟化温度(ST)までの粘度挙動−DIN52312に従う107.6dPasのガラス粘度でのガラスの温度として定義されている−も考慮されなければならず、その際、TgとST("ロングガラス(long glass)")との間の可能な限り大きな差が、600℃をより高い被覆温度で基板が熱変形する危険性を低める。
被覆処理後の冷却に際して層系の剥離を防止するために、更に基板ガラスは、裏面接触(例えばモリブデン、約5×10-6/K)の熱膨張に、それ以上に好ましくは、その上に堆積された半導体層(例えばCIGSにおける約8.5×10-6/K)に整合されていなければならない。更に、ナトリウムが半導体中に導入されることができ、そうして半導体の結晶構造中への改善されたカルコゲン導入の結果として太陽電池の効率が高められることが公知である。それゆえ基板ガラスは、担体材料として役立つばかりではなく、付加的な機能も有する:すなわち、ナトリウムの時間的のみならず物理的な位置(被覆面にわたって均一な)に関する、目的に合わせた放出である。ガラスはナトリウムイオン/−原子をTg付近の温度で放出するべきであるが、このことはガラス中のナトリウムイオンの高められた移動度を前提とする。代替的に、ナトリウムイオンの拡散を完全に防止するバリア層(例えばAl2O3層)を、モリブデンによる被覆前にガラス表面に施与することができる。次いでナトリウムイオンは、更なる処理工程において別個に添加されなければならず(例えばNaF2の形で)、これが処理時間及び処理費用を高める。
そのうえ、太陽電池の通常の設置場所(屋外)により、環境の影響、特に水(水分、湿分、雨水)に対してのみならず、その他の、製造処理において使用される可能性のある腐食性試薬に対する十分な化学的耐久性が考慮されなければならない。層自体は、SiO2、プラスチック、表面塗膜及び/又はカバーガラスによるカプセル化によっても環境から保護される。
大きい気泡、すなわち、裸眼で見える気泡(直径>80μm)は、エッジ長さ10cmの研磨されたガラスキューブにおいて裸眼によってカウントする。より小さい気泡のサイズ及び数は、良好な表面研磨を有する10cm×10cm×0.1cmの大きさのガラス板上で、顕微鏡を用いて400〜500倍の倍率で測定/カウントする。
原料を1580℃の溶融温度で8hにわたって導入し、引き続き、この温度で14時間維持した。次いで、攪拌下でガラス溶融物を8hにわたって1400℃に冷却し、引き続き、500℃の予め加熱されたグラファイト鋳型に鋳込んだ。この鋳込型を、鋳込み直後に、650℃に予め加熱された徐冷炉内に入れ、そして5℃/hで室温に冷却した。その後、このブロックから、測定のために必要なガラス試験片をカットした。
典型的なガラス特性を測定する公知の方法以外に、ここでは伝導率の測定が特に重要である。誘電測定を、Novocontrol社(Limburg在)のインピーダンススペクトルα−アナライザー、及び関連する温度制御装置を用いて実施した。測定に際して、典型的に40mmの直径及び約0.5〜2mmの厚さを有するガラス試験片の通常は円形の板の両面を導電性銀と接触させる。試験片を、上側及び下側から金メッキ真鍮接点によって試験片ホルダー中に締め付け、そしてクライオスタット中に設置する。次いで、周波数及び温度の機能として、ブリッジ平衡によって配置の電気抵抗及び静電容量を測定することができる。公知の形状の場合、次いで材料の伝導率及び誘電率が測定をすることができる。
ガラスは変形することなく、従来技術を上回る約100℃〜150℃の温度で使用できるのみならず、高められたナトリウムイオン移動度によって、例えば、CIGSのようなI−III−VI2−化合物半導体の結晶化処理用の確実なドープ源であることも明らかとなる;それゆえ、これらの化合物半導体は、約100℃〜150℃高い温度範囲内で、より高い完成度に成長することができる。
500〜600℃、15〜50ml/分の範囲内での圧縮空気の流量及び5〜25ml/分の範囲内の二酸化硫黄ガス(SO2)の流量で、5〜20分の時間の間、試験されるべき基板ガラス表面を供した。その際、ガラスの種類に関係なく、基板ガラス上に結晶性皮膜が形成される。結晶性皮膜を洗出した後(例えば、表面が更に浸食されないように、水又は酸性水溶液又は塩基性水溶液を用いて)、顕微鏡により、基板ガラス表面当たりの表面欠陥を測定する。100×100nm2の表面領域中で10個未満、特に5個未満の表面欠陥が存在する場合、基板ガラスは相分離していないと見なされる。その際、>5nmの直径を有する全ての表面欠陥をカウントする。
α=1/d*Ig(1/Ti)[cm-1]、その際、Ti=透過率TとのT/P
更に、含水量をc=α/eから算出し、その際、eは、実際の吸光係数[l*mol-1*cm-1]であり、且つ上記の評価範囲において、H2O 1モルに対するe=110 l*mol-1*cm-1]の一定値として使用する。値eは、H.Frank及びH.Scholzeによる論文"Glastechnischen Berichten(ガラス技術報告書)"第36巻、第9号、第350頁の中で読み取ることができる。
Claims (18)
- 少なくとも1つのNa2O含有多成分基板ガラスを有する薄膜太陽電池であって、
その際、前記基板ガラスが、B2O3 1質量%未満、BaO 1質量%未満及びCaO+SrO+ZnO 計3質量%未満を含有し、
前記基板ガラス成分(Na2O+K2O)/(MgO+CaO+SrO+BaO)のモル比が、0.95より大きく、
前記基板ガラス成分SiO2/Al2O3のモル比が、7より小さく
且つ
前記基板ガラスが、550℃より高い、特に600℃より高いガラス転移温度Tgを有する薄膜太陽電池。 - 前記基板ガラスが、B2O3 0.5質量%未満を含有し、特に不可避の痕跡量は別にしてB2O3を含有しないことを特徴とする、請求項1記載の太陽電池。
- 前記基板ガラスが、BaO 0.5質量%未満を含有し、特に不可避の痕跡量は別にしてBaOを含有しないことを特徴とする、請求項1又は2記載の太陽電池。
- 前記基板ガラスが、CaO+SrO+ZnO 計2質量%未満を含有することを特徴とする、請求項1から3までのいずれか1項記載の太陽電池。
- 前記基板ガラスが、Na2O 5質量%未満、特にNa2O 8質量%未満を含有することを特徴とする、請求項1から4までのいずれか1項記載の太陽電池。
- 前記基板ガラス成分(Na2O+K2O)/(MgO+CaO+SrO+BaO)のモル比が、6.5未満であることを特徴とする、請求項1から5までのいずれか1項記載の太陽電池。
- 前記基板ガラス成分SiO2/Al2O3のモル比が、6未満であり、且つ5より大きいことを特徴とする、請求項1から6までのいずれか1項記載の太陽電池。
- 前記基板ガラスが、20℃〜300℃の温度範囲内で、7.5×10-6/Kより大きい、特に8.0×10-6/K〜9.5×10-6/Kの熱膨張係数α20/300を有することを特徴とする、請求項1から7までのいずれか1項記載の太陽電池。
- 前記基板ガラスが、25℃で17×10-12S/cmより大きい電気伝導率を有し、且つ250℃での前記基板ガラスの電気伝導率が、25℃での前記基板ガラスの電気伝導率より104倍大きく、有利に105倍大きく、且つ特に有利に106倍大きいことを特徴とする、請求項1から8までのいずれか1項記載の太陽電池。
- 前記基板ガラス中のナトリウムイオンが、少なくとも部分的に他のカチオンによって、特にカリウムイオンによって20μmの表面深さまで置き換えられており、そのため表面層中でのナトリウムイオン含有量が、前記基板ガラスのナトリウムイオン全含有量に比して低下していることを特徴とする、請求項1から9までのいずれか1項記載の太陽電池。
- 前記基板ガラスが、モル%記載で以下の組成物成分:
SiO2 63〜67.5
Al2O3 10〜12.5
Na2O 8.5〜15.5
K2O 2.5〜4.0
MgO 3.0〜9.0
CaO+SrO+ZnO 0〜2.5
TiO2+ZrO2 0.5〜1.5
CeO2 0.02〜0.5
As2O3+Sb2O3 0〜0.4
SnO2 0〜1.5
F 0.05〜2.6
を有し、
その際、前記基板ガラス成分の以下のモル比:
SiO2/Al2O3 5.0〜6.8
Na2O/K2O 2.1〜6.2
Al2O3/K2O 2.5〜5.0
Al2O3/Na2O 0.6〜1.5
(Na2O+K2O)/(MgO+CaO+SrO) 0.95〜6.5
が適用されることを特徴とする、請求項1から10までのいずれか1項記載の太陽電池。 - 前記基板ガラスが、少なくとも1つのモリブデン層で被覆されており、その際、前記層が、有利に0.25〜3.0μmの厚さであり、且つ特に有利に0.5〜1.5μmの厚さであることを特徴とする、請求項1から11までのいずれか1項記載の太陽電池。
- 前記太陽電池が、シリコンベースの薄膜太陽電池又は化合物半導体材料、例えばCdTe、CIS又はCIGSベースの薄膜太陽電池であることを特徴とする、請求項1から12までのいずれか1項記載の太陽電池。
- 前記太陽電池が、平面形、弓形、球形又は円柱形の薄膜太陽電池であることを特徴とする、請求項1から13までのいずれか1項記載の太陽電池。
- 前記太陽電池が、導電材料及び透明導電材料、感光性の化合物半導体材料、バッファー材料及び/又は金属性の裏面接触材料を有する機能層を持つことを特徴とする、請求項1から14までのいずれか1項記載の太陽電池。
- 少なくとも2つの太陽電池が光起電モジュールの形成のために直列に接続されており、且つ、特にSiO2、プラスチック、特にEVA(エチレン−ビニル−アセテート)、表面塗膜又は/及び更に別の基板ガラスを用いたカプセル化によって環境の影響から保護されていることを特徴とする、請求項1から15までのいずれか1項記載の太陽電池。
- 前記太陽電池が、基板ガラスに又は前もって被覆された基板ガラスに>550℃の温度で施与された少なくとも1つの光活性半導体を有することを特徴とする、請求項1から16までのいずれか1項記載の太陽電池。
- 前記基板ガラスが相分離しておらず、且つ25〜80ミリモル/lのβ−OH含有量を有することを特徴とする、請求項1から17までのいずれか1項記載の太陽電池。
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TW (1) | TW201100347A (ja) |
WO (1) | WO2010130358A1 (ja) |
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Also Published As
Publication number | Publication date |
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DE102009050988B3 (de) | 2010-11-04 |
WO2010130358A1 (de) | 2010-11-18 |
KR20100122466A (ko) | 2010-11-22 |
TW201100347A (en) | 2011-01-01 |
US20100288351A1 (en) | 2010-11-18 |
JP4944977B2 (ja) | 2012-06-06 |
CN101885580A (zh) | 2010-11-17 |
KR101023801B1 (ko) | 2011-03-21 |
EP2429963A1 (de) | 2012-03-21 |
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