JP2010251676A - トレンチ基板及びその製造方法 - Google Patents
トレンチ基板及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 47
- 238000007747 plating Methods 0.000 claims abstract description 84
- 238000005520 cutting process Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 157
- 230000008569 process Effects 0.000 claims description 104
- 238000005530 etching Methods 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 11
- 238000010030 laminating Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000000047 product Substances 0.000 description 69
- 238000007772 electroless plating Methods 0.000 description 21
- 238000009713 electroplating Methods 0.000 description 16
- 239000003054 catalyst Substances 0.000 description 12
- 239000000654 additive Substances 0.000 description 11
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- 229910052751 metal Inorganic materials 0.000 description 3
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- 230000006872 improvement Effects 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002677 Pd–Sn Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000010531 catalytic reduction reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- ZMLDXWLZKKZVSS-UHFFFAOYSA-N palladium tin Chemical compound [Pd].[Sn] ZMLDXWLZKKZVSS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
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Abstract
【解決手段】ベース基板102、前記ベース基板102の一面または両面に積層され、回路領域を含み製品縁部のダミー領域にトレンチが形成された絶縁層112、及び前記回路領域に形成されたトレンチの内部にメッキ工程で形成された回路パターン及びビアを含む回路層124を含む。製品縁部のダミー領域及び製品間の切断領域にメッキ偏差の改善のためのトレンチが形成されることにより、メッキ工程の際、絶縁層上に形成されるメッキ層の偏差を改善することができる。
【選択図】図11
Description
図11は本発明の好適な第1実施例によるトレンチ基板の断面図である。以下、同図を参照して本実施例によるトレンチ基板100aについて説明する。
図12は本発明の好適な第2実施例によるトレンチ基板の断面図である。以下、これを参照して本実施例によるトレンチ基板について説明する。
図13〜図21は本発明の好適な第1実施例によるトレンチ基板の製造方法を工程順に示す工程断面図である。以下、これを参照して本実施例によるトレンチ基板の製造方法を説明する。
図22〜図30は本発明の好適な第2実施例によるトレンチ基板の製造方法を工程順に示す工程断面図である。本実施例は、一面の回路層はLPP工法を利用して形成し、他面の回路層は一般的な回路形成工法を用いて形成するものであり、他面の回路層形成工程で、第2トレンチに形成されたメッキ層をいっぺんに除去することができるトレンチ基板の製造方法を提供することを特徴とする。以下、図22〜図30を参照して本実施例によるトレンチ基板の製造方法を説明する。
112、112a、112b 絶縁層
114a、114b トレンチ
114c ビアホール
116、116a、116b 無電解メッキ層
118、118a、118b 電解メッキ層
120、120a、120b メッキ層
124、124a、124b 回路層
126、126a、126b 外層絶縁層
Claims (18)
- ベース基板;
前記ベース基板の一面または両面に積層され、回路領域を含み製品縁部のダミー領域にトレンチが形成された絶縁層;及び
前記回路領域に形成されたトレンチの内部にメッキ工程で形成された回路パターン及びビアを含む回路層;
を含むことを特徴とする、トレンチ基板。 - 前記製品縁部のダミー領域に形成された前記トレンチの内部を含み前記絶縁層に積層された外層絶縁層をさらに含むことを特徴とする、請求項1に記載のトレンチ基板。
- 前記製品縁部のダミー領域に形成された前記トレンチは、線形、円形、三角形、四角形、十字形、または多角形の形状を持つことを特徴とする、請求項1に記載のトレンチ基板。
- 前記製品縁部のダミー領域に形成された前記トレンチは、陰刻部または突起が形成された陰刻部であることを特徴とする、請求項1に記載のトレンチ基板。
- ベース基板;
前記ベース基板の一面に積層され、回路領域を含み製品縁部のダミー領域にトレンチが形成された第1絶縁層;
前記ベース基板の他面に積層され、回路領域にビアホールが形成された第2絶縁層;
前記第1絶縁層の前記回路領域に形成されたトレンチの内部にメッキ工程で形成された回路パターン及びビアを含む第1回路層;及び
前記第2絶縁層に形成されたビアを含む第2回路層;
を含むことを特徴とする、トレンチ基板。 - 前記第1絶縁層の前記製品縁部のダミー領域に形成された前記トレンチの内部を含み前記第1絶縁層に積層された第1外層絶縁層;及び
前記第2絶縁層に積層された第2外層絶縁層;
をさらに含むことを特徴とする、請求項5に記載のトレンチ基板。 - 前記製品縁部のダミー領域に形成された前記トレンチは、線形、円形、三角形、四角形、十字形、または多角形の形状を持つことを特徴とする、請求項5に記載のトレンチ基板。
- 前記製品縁部のダミー領域に形成された前記トレンチは、陰刻部または突起が形成された陰刻部であることを特徴とする、請求項5に記載のトレンチ基板。
- (A)ベース基板の一面または両面に積層された絶縁層の回路領域を含み製品縁部のダミー領域及び製品間の切断領域にトレンチを加工する段階;
(B)前記トレンチの内部を含み前記絶縁層にメッキ層を形成する段階;
(C)前記絶縁層上部に過剰に形成された前記メッキ層を除去する段階;及び
(D)前記回路領域にエッチングレジストを塗布し、前記製品縁部のダミー領域及び製品間の切断領域に形成された前記メッキ層を除去した後、前記エッチングレジストを除去する段階;
を含むことを特徴とする、トレンチ基板の製造方法。 - 前記(D)段階の後に、
(E)前記製品間の切断領域に沿ってダイシングを行って個別トレンチ基板にする段階;
を含むことを特徴とする、請求項9に記載のトレンチ基板の製造方法。 - 前記(D)段階の後に、
(E)前記製品縁部のダミー領域及び前記製品間の切断領域に形成された前記トレンチの内部を含み前記絶縁層に外層絶縁層を積層する段階;
を含むことを特徴とする、請求項9に記載のトレンチ基板の製造方法。 - 前記(A)段階において、前記製品縁部のダミー領域及び前記製品間の切断領域に形成された前記トレンチは、線形、円形、三角形、四角形、十字形、または多角形の形状を持つことを特徴とする、請求項9に記載のトレンチ基板の製造方法。
- 前記(A)段階において、前記製品縁部のダミー領域及び前記製品間の切断領域に形成された前記トレンチは、陰刻部または突起が形成された陰刻部であることを特徴とする、請求項9に記載のトレンチ基板の製造方法。
- (A)ベース基板の一面に第1絶縁層を積層し、前記ベース基板の他面に第2絶縁層を積層する段階;
(B)前記第1絶縁層の回路領域を含み製品縁部のダミー領域及び製品間の切断領域にトレンチを加工し、前記第2絶縁層の回路領域にビアホールを加工する段階;
(C)前記トレンチを含み前記第1絶縁層に第1メッキ層を形成し、前記ビアホールを含み前記第2絶縁層に第2メッキ層を形成する段階;
(D)前記第1絶縁層の上部に過剰に形成された第1メッキ層を除去する段階;
(E)前記第1絶縁層の回路領域に第1エッチングレジストを塗布し、前記第2絶縁層に回路形成用開口部を持つ第2エッチングレジストを塗布する段階;及び
(F)前記第1絶縁層の前記製品縁部のダミー領域及び前記製品間の切断領域に形成された前記第1メッキ層及び前記回路形成用開口部によって露出した前記第2メッキ層を除去した後、前記第1エッチングレジスト及び前記第2エッチングレジストを除去する段階;
を含むことを特徴とする、トレンチ基板の製造方法。 - 前記(F)段階の後に、
(G)前記製品間の切断領域に沿ってダイシングを行って個別トレンチ基板にする段階;
を含むことを特徴とする、請求項14に記載のトレンチ基板の製造方法。 - 前記(F)段階の後に、
(G)前記第1絶縁層の前記製品縁部のダミー領域及び前記製品間の切断領域に形成された前記トレンチの内部を含み前記第1絶縁層に第1外層絶縁層を積層し、前記第2絶縁層に第2外層絶縁層を積層する段階;
を含むことを特徴とする、請求項14に記載のトレンチ基板の製造方法。 - 前記(B)段階において、前記製品縁部のダミー領域及び前記製品間の切断領域に形成された前記トレンチは、線形、円形、三角形、四角形、十字形、または多角形の形状を持つことを特徴とする、請求項14に記載のトレンチ基板の製造方法。
- 前記(B)段階において、前記製品縁部のダミー領域及び前記製品間の切断領域に形成された前記トレンチは、陰刻部または突起が形成された陰刻部であることを特徴とする、請求項14に記載のトレンチ基板の製造方法。
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US8883647B2 (en) | 2014-11-11 |
US20120077333A1 (en) | 2012-03-29 |
KR101067207B1 (ko) | 2011-09-22 |
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