JP2010251367A5 - - Google Patents

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Publication number
JP2010251367A5
JP2010251367A5 JP2009096024A JP2009096024A JP2010251367A5 JP 2010251367 A5 JP2010251367 A5 JP 2010251367A5 JP 2009096024 A JP2009096024 A JP 2009096024A JP 2009096024 A JP2009096024 A JP 2009096024A JP 2010251367 A5 JP2010251367 A5 JP 2010251367A5
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JP
Japan
Prior art keywords
electrode
reinforcing plate
forming
semiconductor device
electronic component
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Application number
JP2009096024A
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English (en)
Japanese (ja)
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JP2010251367A (ja
JP5372579B2 (ja
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Priority to JP2009096024A priority Critical patent/JP5372579B2/ja
Priority claimed from JP2009096024A external-priority patent/JP5372579B2/ja
Priority to US12/748,545 priority patent/US8169072B2/en
Publication of JP2010251367A publication Critical patent/JP2010251367A/ja
Publication of JP2010251367A5 publication Critical patent/JP2010251367A5/ja
Application granted granted Critical
Publication of JP5372579B2 publication Critical patent/JP5372579B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009096024A 2009-04-10 2009-04-10 半導体装置及びその製造方法、並びに電子装置 Active JP5372579B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009096024A JP5372579B2 (ja) 2009-04-10 2009-04-10 半導体装置及びその製造方法、並びに電子装置
US12/748,545 US8169072B2 (en) 2009-04-10 2010-03-29 Semiconductor device, manufacturing method thereof, and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009096024A JP5372579B2 (ja) 2009-04-10 2009-04-10 半導体装置及びその製造方法、並びに電子装置

Publications (3)

Publication Number Publication Date
JP2010251367A JP2010251367A (ja) 2010-11-04
JP2010251367A5 true JP2010251367A5 (enExample) 2012-05-31
JP5372579B2 JP5372579B2 (ja) 2013-12-18

Family

ID=42933735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009096024A Active JP5372579B2 (ja) 2009-04-10 2009-04-10 半導体装置及びその製造方法、並びに電子装置

Country Status (2)

Country Link
US (1) US8169072B2 (enExample)
JP (1) JP5372579B2 (enExample)

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US8258012B2 (en) 2010-05-14 2012-09-04 Stats Chippac, Ltd. Semiconductor device and method of forming discontinuous ESD protection layers between semiconductor die
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KR101947722B1 (ko) * 2012-06-07 2019-04-25 삼성전자주식회사 적층 반도체 패키지 및 이의 제조방법
US9527723B2 (en) * 2014-03-13 2016-12-27 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming microelectromechanical systems (MEMS) package
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KR102117477B1 (ko) * 2015-04-23 2020-06-01 삼성전기주식회사 반도체 패키지 및 반도체 패키지의 제조방법
KR102021886B1 (ko) * 2015-05-15 2019-09-18 삼성전자주식회사 전자부품 패키지 및 패키지 온 패키지 구조
US9741633B2 (en) * 2015-06-02 2017-08-22 Samsung Electronics Co., Ltd. Semiconductor package including barrier members and method of manufacturing the same
CN104916593A (zh) * 2015-06-02 2015-09-16 三星半导体(中国)研究开发有限公司 封装件和制造封装件的方法
KR101681028B1 (ko) * 2015-11-17 2016-12-01 주식회사 네패스 반도체 패키지 및 그 제조방법
CN111029260A (zh) * 2019-12-20 2020-04-17 广东佛智芯微电子技术研究有限公司 扇出型三维封装结构的制备方法及扇出型三维封装结构
CN111326503B (zh) * 2019-12-31 2021-03-12 诺思(天津)微系统有限责任公司 具有叠置单元的半导体结构及制造方法、电子设备

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