JP2010225768A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2010225768A
JP2010225768A JP2009070257A JP2009070257A JP2010225768A JP 2010225768 A JP2010225768 A JP 2010225768A JP 2009070257 A JP2009070257 A JP 2009070257A JP 2009070257 A JP2009070257 A JP 2009070257A JP 2010225768 A JP2010225768 A JP 2010225768A
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JP
Japan
Prior art keywords
fin
substrate
transistor
type
semiconductor layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009070257A
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English (en)
Japanese (ja)
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JP2010225768A5 (OSRAM
Inventor
Satoshi Inaba
葉 聡 稲
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Toshiba Corp
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Toshiba Corp
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Publication date
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Priority to JP2009070257A priority Critical patent/JP2010225768A/ja
Priority to US12/629,998 priority patent/US8129798B2/en
Publication of JP2010225768A publication Critical patent/JP2010225768A/ja
Publication of JP2010225768A5 publication Critical patent/JP2010225768A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2009070257A 2009-03-23 2009-03-23 半導体装置 Pending JP2010225768A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009070257A JP2010225768A (ja) 2009-03-23 2009-03-23 半導体装置
US12/629,998 US8129798B2 (en) 2009-03-23 2009-12-03 Semiconductor device comprising fully-depleted and partially-depleted FinFETs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009070257A JP2010225768A (ja) 2009-03-23 2009-03-23 半導体装置

Publications (2)

Publication Number Publication Date
JP2010225768A true JP2010225768A (ja) 2010-10-07
JP2010225768A5 JP2010225768A5 (OSRAM) 2011-06-30

Family

ID=42736778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009070257A Pending JP2010225768A (ja) 2009-03-23 2009-03-23 半導体装置

Country Status (2)

Country Link
US (1) US8129798B2 (OSRAM)
JP (1) JP2010225768A (OSRAM)

Cited By (11)

* Cited by examiner, † Cited by third party
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KR20150007906A (ko) * 2013-07-12 2015-01-21 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP2015019067A (ja) * 2013-07-12 2015-01-29 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 半導体装置及びその製造方法
JP2015506589A (ja) * 2012-01-13 2015-03-02 テラ イノヴェイションズ インコーポレイテッド リニアＦｉｎＦＥＴ構造をもつ回路
WO2015045281A1 (ja) * 2013-09-27 2015-04-02 パナソニック株式会社 半導体集積回路および論理回路
KR20170022982A (ko) * 2014-06-27 2017-03-02 인텔 코포레이션 가변 크기 핀을 가진 다중 게이트 트랜지스터
JP2017112331A (ja) * 2015-12-18 2017-06-22 株式会社フローディア メモリセル、不揮発性半導体記憶装置、および不揮発性半導体記憶装置の製造方法
JP2018032743A (ja) * 2016-08-24 2018-03-01 株式会社フローディア メモリセル、および不揮発性半導体記憶装置
JP2018064124A (ja) * 2013-08-28 2018-04-19 株式会社ソシオネクスト 半導体集積回路装置
JPWO2020262541A1 (OSRAM) * 2019-06-26 2020-12-30
JP2022532601A (ja) * 2019-05-14 2022-07-15 インターナショナル・ビジネス・マシーンズ・コーポレーション Ｃｍｏｓ適合高速低電力乱数生成器
JP2025019283A (ja) * 2021-01-19 2025-02-06 株式会社ソシオネクスト 半導体装置

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US8243526B2 (en) * 2009-12-14 2012-08-14 Intel Corporation Depletion mode circuit protection device
US8633076B2 (en) 2010-11-23 2014-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method for adjusting fin width in integrated circuitry
US8525267B2 (en) * 2010-11-23 2013-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Device and method for forming Fins in integrated circuitry
US9472550B2 (en) * 2010-11-23 2016-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Adjusted fin width in integrated circuitry
US8582352B2 (en) * 2011-12-06 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for FinFET SRAM cells
US8693235B2 (en) 2011-12-06 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for finFET SRAM arrays in integrated circuits
US9576978B2 (en) * 2012-10-09 2017-02-21 Samsung Electronics Co., Ltd. Cells including at least one fin field effect transistor and semiconductor integrated circuits including the same
KR101979733B1 (ko) * 2012-11-08 2019-05-20 삼성전자 주식회사 적어도 하나의 핀 트랜지스터를 가지는 셀 및 이를 포함하는 반도체 집적 회로
US20140103437A1 (en) * 2012-10-15 2014-04-17 Gold Standard Simulations Ltd. Random Doping Fluctuation Resistant FinFET
CN102956693B (zh) * 2012-11-01 2015-12-09 无锡中星微电子有限公司 一种finfet以及采用该finfet的应用电路
US9397217B2 (en) * 2012-12-28 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of non-planar semiconductor device
US9105719B2 (en) * 2013-01-09 2015-08-11 Broadcom Corporation Multigate metal oxide semiconductor devices and fabrication methods
US9847404B2 (en) * 2013-07-06 2017-12-19 Semiwise Limited Fluctuation resistant FinFET
KR102237713B1 (ko) 2014-11-17 2021-04-08 삼성전자주식회사 반도체 장치의 제조 방법
US10134902B2 (en) * 2016-12-15 2018-11-20 Taiwan Semiconductor Manufacturing Company, Ltd. PMOS FinFET
US10950546B1 (en) 2019-09-17 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including back side power supply circuit
CN113314605B (zh) * 2020-02-26 2023-11-21 中芯国际集成电路制造(上海)有限公司 半导体结构及半导体结构的形成方法

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JPH08228145A (ja) * 1994-06-28 1996-09-03 Nippon Telegr & Teleph Corp <Ntt> 低電圧ｓｏｉ型論理回路
JP2002016260A (ja) * 2000-04-27 2002-01-18 Matsushita Electric Ind Co Ltd 半導体集積回路装置
JP2008090958A (ja) * 2006-10-03 2008-04-17 Toshiba Corp 半導体記憶装置
JP2008288272A (ja) * 2007-05-15 2008-11-27 Toshiba Corp 半導体装置

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US6720619B1 (en) * 2002-12-13 2004-04-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator chip incorporating partially-depleted, fully-depleted, and multiple-gate devices
US7456476B2 (en) * 2003-06-27 2008-11-25 Intel Corporation Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
US6867460B1 (en) * 2003-11-05 2005-03-15 International Business Machines Corporation FinFET SRAM cell with chevron FinFET logic
JP4064955B2 (ja) * 2004-09-30 2008-03-19 株式会社東芝 半導体装置及びその製造方法
US7547947B2 (en) * 2005-11-15 2009-06-16 International Business Machines Corporation SRAM cell
US7301210B2 (en) * 2006-01-12 2007-11-27 International Business Machines Corporation Method and structure to process thick and thin fins and variable fin to fin spacing
JP4855786B2 (ja) * 2006-01-25 2012-01-18 株式会社東芝 半導体装置
JP5086797B2 (ja) * 2007-12-26 2012-11-28 株式会社東芝 半導体装置

Patent Citations (4)

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JPH08228145A (ja) * 1994-06-28 1996-09-03 Nippon Telegr & Teleph Corp <Ntt> 低電圧ｓｏｉ型論理回路
JP2002016260A (ja) * 2000-04-27 2002-01-18 Matsushita Electric Ind Co Ltd 半導体集積回路装置
JP2008090958A (ja) * 2006-10-03 2008-04-17 Toshiba Corp 半導体記憶装置
JP2008288272A (ja) * 2007-05-15 2008-11-27 Toshiba Corp 半導体装置

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015506589A (ja) * 2012-01-13 2015-03-02 テラ イノヴェイションズ インコーポレイテッド リニアＦｉｎＦＥＴ構造をもつ回路
JP2015019067A (ja) * 2013-07-12 2015-01-29 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 半導体装置及びその製造方法
KR102083774B1 (ko) * 2013-07-12 2020-03-03 삼성전자 주식회사 반도체 장치 및 그 제조 방법
KR20150007906A (ko) * 2013-07-12 2015-01-21 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP2018064124A (ja) * 2013-08-28 2018-04-19 株式会社ソシオネクスト 半導体集積回路装置
JP2019021950A (ja) * 2013-09-27 2019-02-07 株式会社ソシオネクスト 半導体集積回路
WO2015045281A1 (ja) * 2013-09-27 2015-04-02 パナソニック株式会社 半導体集積回路および論理回路
US10600784B2 (en) 2013-09-27 2020-03-24 Socionext Inc. Semiconductor integrated circuit and logic circuit
JPWO2015045281A1 (ja) * 2013-09-27 2017-03-09 株式会社ソシオネクスト 半導体集積回路および論理回路
US9748237B2 (en) 2013-09-27 2017-08-29 Socionext, Inc. Semiconductor integrated circuit and logic circuit
US10304825B2 (en) 2013-09-27 2019-05-28 Socionext Inc. Semiconductor integrated circuit and logic circuit
US10008498B2 (en) 2013-09-27 2018-06-26 Socionext Inc. Semiconductor integrated circuit and logic circuit
JP2017519358A (ja) * 2014-06-27 2017-07-13 インテル・コーポレーション 可変サイズのフィンを有するマルチゲートトランジスタ
KR20170022982A (ko) * 2014-06-27 2017-03-02 인텔 코포레이션 가변 크기 핀을 가진 다중 게이트 트랜지스터
KR102215393B1 (ko) 2014-06-27 2021-02-16 인텔 코포레이션 가변 크기 핀을 가진 다중 게이트 트랜지스터
JP2017112331A (ja) * 2015-12-18 2017-06-22 株式会社フローディア メモリセル、不揮発性半導体記憶装置、および不揮発性半導体記憶装置の製造方法
JP2018032743A (ja) * 2016-08-24 2018-03-01 株式会社フローディア メモリセル、および不揮発性半導体記憶装置
JP2022532601A (ja) * 2019-05-14 2022-07-15 インターナショナル・ビジネス・マシーンズ・コーポレーション Ｃｍｏｓ適合高速低電力乱数生成器
JP7482903B2 (ja) 2019-05-14 2024-05-14 インターナショナル・ビジネス・マシーンズ・コーポレーション Ｃｍｏｓ適合高速低電力乱数生成器
JPWO2020262541A1 (OSRAM) * 2019-06-26 2020-12-30
KR20220023996A (ko) * 2019-06-26 2022-03-03 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치
CN113795922A (zh) * 2019-06-26 2021-12-14 索尼半导体解决方案公司 成像装置
WO2020262541A1 (ja) * 2019-06-26 2020-12-30 ソニーセミコンダクタソリューションズ株式会社 撮像装置
US12183756B2 (en) 2019-06-26 2024-12-31 Sony Semiconductor Solutions Corporation Imaging device
TWI868171B (zh) * 2019-06-26 2025-01-01 日商索尼半導體解決方案公司 攝像裝置
KR102826722B1 (ko) * 2019-06-26 2025-06-30 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치
JP2025019283A (ja) * 2021-01-19 2025-02-06 株式会社ソシオネクスト 半導体装置
JP7736152B2 (ja) 2021-01-19 2025-09-09 株式会社ソシオネクスト 半導体装置

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Publication number Publication date
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US20100237436A1 (en) 2010-09-23

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