JP2010225768A5 - - Google Patents

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Publication number
JP2010225768A5
JP2010225768A5 JP2009070257A JP2009070257A JP2010225768A5 JP 2010225768 A5 JP2010225768 A5 JP 2010225768A5 JP 2009070257 A JP2009070257 A JP 2009070257A JP 2009070257 A JP2009070257 A JP 2009070257A JP 2010225768 A5 JP2010225768 A5 JP 2010225768A5
Authority
JP
Japan
Prior art keywords
transistor
substrate
fin
type semiconductor
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009070257A
Other languages
English (en)
Japanese (ja)
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JP2010225768A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009070257A priority Critical patent/JP2010225768A/ja
Priority claimed from JP2009070257A external-priority patent/JP2010225768A/ja
Priority to US12/629,998 priority patent/US8129798B2/en
Publication of JP2010225768A publication Critical patent/JP2010225768A/ja
Publication of JP2010225768A5 publication Critical patent/JP2010225768A5/ja
Pending legal-status Critical Current

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JP2009070257A 2009-03-23 2009-03-23 半導体装置 Pending JP2010225768A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009070257A JP2010225768A (ja) 2009-03-23 2009-03-23 半導体装置
US12/629,998 US8129798B2 (en) 2009-03-23 2009-12-03 Semiconductor device comprising fully-depleted and partially-depleted FinFETs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009070257A JP2010225768A (ja) 2009-03-23 2009-03-23 半導体装置

Publications (2)

Publication Number Publication Date
JP2010225768A JP2010225768A (ja) 2010-10-07
JP2010225768A5 true JP2010225768A5 (OSRAM) 2011-06-30

Family

ID=42736778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009070257A Pending JP2010225768A (ja) 2009-03-23 2009-03-23 半導体装置

Country Status (2)

Country Link
US (1) US8129798B2 (OSRAM)
JP (1) JP2010225768A (OSRAM)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8243526B2 (en) * 2009-12-14 2012-08-14 Intel Corporation Depletion mode circuit protection device
US8633076B2 (en) * 2010-11-23 2014-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method for adjusting fin width in integrated circuitry
US8525267B2 (en) * 2010-11-23 2013-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Device and method for forming Fins in integrated circuitry
US9472550B2 (en) * 2010-11-23 2016-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Adjusted fin width in integrated circuitry
US8582352B2 (en) * 2011-12-06 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for FinFET SRAM cells
US8693235B2 (en) 2011-12-06 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for finFET SRAM arrays in integrated circuits
EP2803077A4 (en) * 2012-01-13 2015-11-04 Tela Innovations Inc CIRCUITS WITH LINEAR FINFET STRUCTURES
KR101979733B1 (ko) * 2012-11-08 2019-05-20 삼성전자 주식회사 적어도 하나의 핀 트랜지스터를 가지는 셀 및 이를 포함하는 반도체 집적 회로
US9576978B2 (en) * 2012-10-09 2017-02-21 Samsung Electronics Co., Ltd. Cells including at least one fin field effect transistor and semiconductor integrated circuits including the same
US20140103437A1 (en) * 2012-10-15 2014-04-17 Gold Standard Simulations Ltd. Random Doping Fluctuation Resistant FinFET
CN102956693B (zh) * 2012-11-01 2015-12-09 无锡中星微电子有限公司 一种finfet以及采用该finfet的应用电路
US9397217B2 (en) * 2012-12-28 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of non-planar semiconductor device
US9105719B2 (en) * 2013-01-09 2015-08-11 Broadcom Corporation Multigate metal oxide semiconductor devices and fabrication methods
US9847404B2 (en) * 2013-07-06 2017-12-19 Semiwise Limited Fluctuation resistant FinFET
KR102083774B1 (ko) * 2013-07-12 2020-03-03 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9318607B2 (en) * 2013-07-12 2016-04-19 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
WO2015029280A1 (ja) * 2013-08-28 2015-03-05 パナソニック株式会社 半導体集積回路装置
JP6443336B2 (ja) 2013-09-27 2018-12-26 株式会社ソシオネクスト 半導体集積回路および論理回路
WO2015199712A1 (en) * 2014-06-27 2015-12-30 Intel Corporation Multi-gate transistor with variably sized fin
KR102237713B1 (ko) 2014-11-17 2021-04-08 삼성전자주식회사 반도체 장치의 제조 방법
JP5982055B1 (ja) * 2015-12-18 2016-08-31 株式会社フローディア メモリセル、不揮発性半導体記憶装置、および不揮発性半導体記憶装置の製造方法
JP6069569B1 (ja) * 2016-08-24 2017-02-01 株式会社フローディア メモリセル、および不揮発性半導体記憶装置
US10134902B2 (en) * 2016-12-15 2018-11-20 Taiwan Semiconductor Manufacturing Company, Ltd. PMOS FinFET
US11132177B2 (en) * 2019-05-14 2021-09-28 International Business Machines Corporation CMOS-compatible high-speed and low-power random number generator
TWI868171B (zh) 2019-06-26 2025-01-01 日商索尼半導體解決方案公司 攝像裝置
US10950546B1 (en) 2019-09-17 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including back side power supply circuit
CN113314605B (zh) * 2020-02-26 2023-11-21 中芯国际集成电路制造(上海)有限公司 半导体结构及半导体结构的形成方法
JP7600701B2 (ja) * 2021-01-19 2024-12-17 株式会社ソシオネクスト 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3250711B2 (ja) * 1994-06-28 2002-01-28 日本電信電話株式会社 低電圧ｓｏｉ型論理回路
JP3416628B2 (ja) * 2000-04-27 2003-06-16 松下電器産業株式会社 半導体集積回路装置
US6720619B1 (en) * 2002-12-13 2004-04-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator chip incorporating partially-depleted, fully-depleted, and multiple-gate devices
US7456476B2 (en) * 2003-06-27 2008-11-25 Intel Corporation Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
US6867460B1 (en) * 2003-11-05 2005-03-15 International Business Machines Corporation FinFET SRAM cell with chevron FinFET logic
JP4064955B2 (ja) * 2004-09-30 2008-03-19 株式会社東芝 半導体装置及びその製造方法
US7547947B2 (en) * 2005-11-15 2009-06-16 International Business Machines Corporation SRAM cell
US7301210B2 (en) * 2006-01-12 2007-11-27 International Business Machines Corporation Method and structure to process thick and thin fins and variable fin to fin spacing
JP4855786B2 (ja) * 2006-01-25 2012-01-18 株式会社東芝 半導体装置
JP5057739B2 (ja) * 2006-10-03 2012-10-24 株式会社東芝 半導体記憶装置
JP4461154B2 (ja) * 2007-05-15 2010-05-12 株式会社東芝 半導体装置
JP5086797B2 (ja) * 2007-12-26 2012-11-28 株式会社東芝 半導体装置

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