JP2010193432A5 - - Google Patents

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Publication number
JP2010193432A5
JP2010193432A5 JP2010000902A JP2010000902A JP2010193432A5 JP 2010193432 A5 JP2010193432 A5 JP 2010193432A5 JP 2010000902 A JP2010000902 A JP 2010000902A JP 2010000902 A JP2010000902 A JP 2010000902A JP 2010193432 A5 JP2010193432 A5 JP 2010193432A5
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JP
Japan
Prior art keywords
transistor
output
inverter
analog switch
drain
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Granted
Application number
JP2010000902A
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English (en)
Japanese (ja)
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JP2010193432A (ja
JP5470054B2 (ja
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Priority to JP2010000902A priority Critical patent/JP5470054B2/ja
Priority claimed from JP2010000902A external-priority patent/JP5470054B2/ja
Publication of JP2010193432A publication Critical patent/JP2010193432A/ja
Publication of JP2010193432A5 publication Critical patent/JP2010193432A5/ja
Application granted granted Critical
Publication of JP5470054B2 publication Critical patent/JP5470054B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010000902A 2009-01-22 2010-01-06 半導体装置 Expired - Fee Related JP5470054B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010000902A JP5470054B2 (ja) 2009-01-22 2010-01-06 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009012050 2009-01-22
JP2009012050 2009-01-22
JP2010000902A JP5470054B2 (ja) 2009-01-22 2010-01-06 半導体装置

Publications (3)

Publication Number Publication Date
JP2010193432A JP2010193432A (ja) 2010-09-02
JP2010193432A5 true JP2010193432A5 (enExample) 2013-01-31
JP5470054B2 JP5470054B2 (ja) 2014-04-16

Family

ID=42194768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010000902A Expired - Fee Related JP5470054B2 (ja) 2009-01-22 2010-01-06 半導体装置

Country Status (4)

Country Link
US (2) US8513977B2 (enExample)
EP (1) EP2211466A3 (enExample)
JP (1) JP5470054B2 (enExample)
KR (1) KR20100086432A (enExample)

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US8928466B2 (en) * 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5827520B2 (ja) * 2010-09-13 2015-12-02 株式会社半導体エネルギー研究所 半導体記憶装置
TWI621121B (zh) * 2011-01-05 2018-04-11 Semiconductor Energy Laboratory Co., Ltd. 儲存元件、儲存裝置、及信號處理電路
KR101924989B1 (ko) * 2011-01-07 2018-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 축전 장치의 제작 방법
JP5859839B2 (ja) * 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 記憶素子の駆動方法、及び、記憶素子
JP5879165B2 (ja) * 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 半導体装置
US10079053B2 (en) * 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Memory element and memory device
US8446171B2 (en) * 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
JP5886127B2 (ja) * 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
US8837203B2 (en) * 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101330483B1 (ko) * 2012-07-26 2013-11-15 엘에스산전 주식회사 Ｒｆｉｄ 태그 장치
JP2014199709A (ja) * 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 記憶装置、半導体装置
DE102013104148A1 (de) * 2013-04-24 2014-10-30 Infineon Technologies Ag Funkkommunikationsprozessoranordnung
JP6580863B2 (ja) 2014-05-22 2019-09-25 株式会社半導体エネルギー研究所 半導体装置、健康管理システム
JP7090473B2 (ja) * 2018-05-24 2022-06-24 ラピスセミコンダクタ株式会社 フラグ保持回路及びフラグ保持方法
JP7079661B2 (ja) * 2018-05-24 2022-06-02 ラピスセミコンダクタ株式会社 フラグ保持回路及びフラグ保持方法
JP2025088973A (ja) * 2023-12-01 2025-06-12 東芝テック株式会社 無線タグ通信装置、無線タグ通信システム及びプログラム

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