JP2010182958A - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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Publication number
JP2010182958A
JP2010182958A JP2009026509A JP2009026509A JP2010182958A JP 2010182958 A JP2010182958 A JP 2010182958A JP 2009026509 A JP2009026509 A JP 2009026509A JP 2009026509 A JP2009026509 A JP 2009026509A JP 2010182958 A JP2010182958 A JP 2010182958A
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semiconductor device
semiconductor chip
convex portion
concavo
semiconductor
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Japanese (ja)
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JP2010182958A5 (https=
Inventor
Hiroshi Ota
弘 太田
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Seiko Instruments Inc
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Seiko Instruments Inc
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Priority to JP2009026509A priority Critical patent/JP2010182958A/ja
Publication of JP2010182958A publication Critical patent/JP2010182958A/ja
Publication of JP2010182958A5 publication Critical patent/JP2010182958A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2009026509A 2009-02-06 2009-02-06 半導体装置および半導体装置の製造方法 Withdrawn JP2010182958A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009026509A JP2010182958A (ja) 2009-02-06 2009-02-06 半導体装置および半導体装置の製造方法

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Application Number Priority Date Filing Date Title
JP2009026509A JP2010182958A (ja) 2009-02-06 2009-02-06 半導体装置および半導体装置の製造方法

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JP2010182958A true JP2010182958A (ja) 2010-08-19
JP2010182958A5 JP2010182958A5 (https=) 2012-01-26

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JP (1) JP2010182958A (https=)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187518A (ja) * 2010-03-05 2011-09-22 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JP2013182923A (ja) * 2012-02-29 2013-09-12 Canon Inc 光電変換装置、撮像システムおよび光電変換装置の製造方法
JP2015122495A (ja) * 2013-12-20 2015-07-02 タレス 高周波相互接続素子
KR20160006702A (ko) 2013-05-07 2016-01-19 피에스4 뤽스코 에스.에이.알.엘. 반도체 장치 및 반도체 장치의 제조 방법
JP2016139654A (ja) * 2015-01-26 2016-08-04 株式会社ジェイデバイス 半導体装置
WO2017089107A1 (de) * 2015-11-24 2017-06-01 Snaptrack, Inc. Elektrisches bauelement mit waermeableitung
JP2018014519A (ja) * 2017-09-12 2018-01-25 キヤノン株式会社 光電変換装置、撮像システムおよび光電変換装置の製造方法
WO2018088018A1 (ja) * 2016-11-09 2018-05-17 Tdk株式会社 ショットキーバリアダイオード及びこれを備える電子回路
CN111554644A (zh) * 2020-06-12 2020-08-18 厦门通富微电子有限公司 一种芯片、芯片封装体及晶圆
CN114093831A (zh) * 2021-11-12 2022-02-25 绍兴同芯成集成电路有限公司 一种键合鳍状硅板的GaN晶圆加工工艺
DE102021130989A1 (de) 2021-11-25 2023-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektronisches bauelement und verfahren zum herstellen eines elektronischen bauelements

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161745A (ja) * 1985-01-10 1986-07-22 Matsushita Electronics Corp 半導体装置
JPH06196511A (ja) * 1992-12-24 1994-07-15 Kawasaki Steel Corp 半導体デバイス
JPH06310626A (ja) * 1993-04-20 1994-11-04 Hitachi Ltd 半導体チップ及び半導体集積回路装置
JP2000012743A (ja) * 1998-06-22 2000-01-14 Matsushita Electric Ind Co Ltd 電子回路装置及びその製造方法
JP2001338932A (ja) * 2000-05-29 2001-12-07 Canon Inc 半導体装置及び半導体装置の製造方法
JP2003282817A (ja) * 2002-03-27 2003-10-03 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2003347488A (ja) * 2002-05-27 2003-12-05 Denso Corp 半導体装置およびその製造方法
JP2005223580A (ja) * 2004-02-05 2005-08-18 Matsushita Electric Ind Co Ltd 弾性表面波素子、弾性表面波デバイス及びその製造方法
JP2005328073A (ja) * 2005-06-21 2005-11-24 Toshiba Corp 半導体発光素子の製造方法
JP2006086192A (ja) * 2004-09-14 2006-03-30 Sumitomo Electric Ind Ltd 発光装置
JP2006186173A (ja) * 2004-12-28 2006-07-13 Shin Etsu Handotai Co Ltd レーザーマーク付き半導体ウェーハの製造方法、及びその半導体ウェーハ
JP2007134454A (ja) * 2005-11-09 2007-05-31 Toshiba Corp 半導体装置の製造方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161745A (ja) * 1985-01-10 1986-07-22 Matsushita Electronics Corp 半導体装置
JPH06196511A (ja) * 1992-12-24 1994-07-15 Kawasaki Steel Corp 半導体デバイス
JPH06310626A (ja) * 1993-04-20 1994-11-04 Hitachi Ltd 半導体チップ及び半導体集積回路装置
JP2000012743A (ja) * 1998-06-22 2000-01-14 Matsushita Electric Ind Co Ltd 電子回路装置及びその製造方法
JP2001338932A (ja) * 2000-05-29 2001-12-07 Canon Inc 半導体装置及び半導体装置の製造方法
JP2003282817A (ja) * 2002-03-27 2003-10-03 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2003347488A (ja) * 2002-05-27 2003-12-05 Denso Corp 半導体装置およびその製造方法
JP2005223580A (ja) * 2004-02-05 2005-08-18 Matsushita Electric Ind Co Ltd 弾性表面波素子、弾性表面波デバイス及びその製造方法
JP2006086192A (ja) * 2004-09-14 2006-03-30 Sumitomo Electric Ind Ltd 発光装置
JP2006186173A (ja) * 2004-12-28 2006-07-13 Shin Etsu Handotai Co Ltd レーザーマーク付き半導体ウェーハの製造方法、及びその半導体ウェーハ
JP2005328073A (ja) * 2005-06-21 2005-11-24 Toshiba Corp 半導体発光素子の製造方法
JP2007134454A (ja) * 2005-11-09 2007-05-31 Toshiba Corp 半導体装置の製造方法

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187518A (ja) * 2010-03-05 2011-09-22 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
US9881957B2 (en) 2012-02-29 2018-01-30 Canon Kabushiki Kaisha Photoelectric conversion device, image pickup system and method of manufacturing photoelectric conversion device
US9368544B2 (en) 2012-02-29 2016-06-14 Canon Kabushiki Kaisha Photoelectric conversion device, image pickup system and method of manufacturing photoelectric conversion device
US12446349B2 (en) 2012-02-29 2025-10-14 Canon Kabushiki Kaisha Photoelectric conversion device, image pickup system and method of manufacturing photoelectric conversion device
US10546891B2 (en) 2012-02-29 2020-01-28 Canon Kabushiki Kaisha Photoelectric conversion device, image pickup system and method of manufacturing photoelectric conversion device
JP2013182923A (ja) * 2012-02-29 2013-09-12 Canon Inc 光電変換装置、撮像システムおよび光電変換装置の製造方法
KR20160006702A (ko) 2013-05-07 2016-01-19 피에스4 뤽스코 에스.에이.알.엘. 반도체 장치 및 반도체 장치의 제조 방법
JP2015122495A (ja) * 2013-12-20 2015-07-02 タレス 高周波相互接続素子
JP2016139654A (ja) * 2015-01-26 2016-08-04 株式会社ジェイデバイス 半導体装置
CN108604892A (zh) * 2015-11-24 2018-09-28 追踪有限公司 具有散热的电气元器件
US11101784B2 (en) 2015-11-24 2021-08-24 Snaptrack, Inc. Electrical component with heat dissipation
WO2017089107A1 (de) * 2015-11-24 2017-06-01 Snaptrack, Inc. Elektrisches bauelement mit waermeableitung
WO2018088018A1 (ja) * 2016-11-09 2018-05-17 Tdk株式会社 ショットキーバリアダイオード及びこれを備える電子回路
JP2018078177A (ja) * 2016-11-09 2018-05-17 Tdk株式会社 ショットキーバリアダイオード及びこれを備える電子回路
JP2018014519A (ja) * 2017-09-12 2018-01-25 キヤノン株式会社 光電変換装置、撮像システムおよび光電変換装置の製造方法
CN111554644A (zh) * 2020-06-12 2020-08-18 厦门通富微电子有限公司 一种芯片、芯片封装体及晶圆
CN114093831A (zh) * 2021-11-12 2022-02-25 绍兴同芯成集成电路有限公司 一种键合鳍状硅板的GaN晶圆加工工艺
DE102021130989A1 (de) 2021-11-25 2023-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektronisches bauelement und verfahren zum herstellen eines elektronischen bauelements
JP2024540770A (ja) * 2021-11-25 2024-11-01 エイエムエス－オスラム インターナショナル ゲーエムベーハー 電子部品及び電子部品を製造するための方法

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