JP2010153511A - 固体撮像素子およびその製造方法、電子情報機器 - Google Patents
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- 239000001045 blue dye Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013144 data compression Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001056 green pigment Substances 0.000 description 1
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Abstract
【解決手段】半導体基板または半導体層の表面側に、光照射により信号電荷を発生する受光部を有する複数の単位画素部が二次元状に配設された固体撮像素子において、隣接単位画素部6を同色で形成することによりカラーフィルタのアライメント精度の緩和を行い、隣接単位画素部6内に画素分離電極7を形成して低照度時にバイアス印加による信号電荷の共有を行い、実効的なフォトダイオード面積を向上させることができる。
【選択図】図2
Description
特許文献2に開示された従来の固体撮像素子では、画素の微細化に伴って、クロストークなどの問題で、各色フィルタのオーバーラップ部に対して高い精度が要求され、製造上の制約が発生するという問題がある。
図1は、本発明の実施形態1であるCMOSイメージセンサにおける単位画素部の一例を示す平面図である。
図7は、本発明の実施形態2として、本発明の実施形態1の固体撮像素子30を含む固体撮像装置を撮像部に用いた電子情報機器の概略構成例を示すブロック図である。
2,21,22 フォトダイオード
3 転送トランジスタ
4 フローティングディフュージョン部(FD)
5 画像単位画素部
6 隣接単位画素部
7 画素分離電極
8 マクロ単位画素部
11 素子分離領域
12 画素分離領域
13 シリコン基板の表面
14 ゲート酸化膜
15 ポリシリコン膜
30 固体撮像素子(CMOSイメージセンサ)
31 Greenフィルタ
32 Redフィルタ
33 Blueフィルタ
34 画素領域
90 電子情報機器
91 固体撮像装置
92 メモリ部
93 表示手段
94 通信手段
95 画像出力手段
Claims (17)
- 半導体基板または半導体層の表面側に、光照射により信号電荷を発生する受光部を有する複数の単位画素部が二次元状に配設された固体撮像素子において、
互いに隣接する4つの単位画素部間に、該受光部とは逆導電型半導体領域およびその上の画素分離電極を配設し、該画素分離電極に所定の電圧を印加することにより該4つの単位画素部間において信号電荷が共有化可能とされている固体撮像素子。 - 半導体基板または半導体層の表面側に、光照射により信号電荷を発生する受光部が設けられ、該受光部に隣接して、該受光部からの信号電荷を電荷転送する電荷転送手段が設けられた複数の単位画素部が二次元状に配設された固体撮像素子において、
該受光部は平面視正方形または矩形に形成され、該電荷転送手段に接しない受光部の2辺に隣接しかつ互いに隣接する4つの単位画素部間に、該受光部とは逆導電型半導体領域およびその上の画素分離電極を配設し、該画素分離電極に所定の電圧を印加することにより該4つの単位画素部間において信号電荷が共有化可能とされている固体撮像素子。 - 前記4つの単位画素部は、隣接した2×2単位である請求項1または2に記載の固体撮像素子。
- 前記逆導電型半導体領域およびその上の画素分離電極は、前記4つの単位画素部間に形成された平面視十字状である請求項1または2に記載の固体撮像素子。
- 前記4つの単位画素部からなる隣接単位画素部毎にそれぞれ対応するように、画素領域上の層間絶縁膜を介して、所定の色配列で赤色フィルタ、緑色フィルタおよび青色フィルタが形成されている請求項1または2に記載の固体撮像素子。
- 前記所定の色配列は、前記単位画素部のベイヤー配列の色を4画素単位で入れ替えて、一方斜め方向に二つのG画素が配置される場合に、一つのR画素と一つのB画素とが他方斜め方向に配置され、該R画素と該B画素の配列順序は交互に逆になり、該二つのG画素の斜め方向も交互に逆の斜め方向になっている請求項5に記載の固体撮像素子。
- 前記受光部の信号電荷が電荷転送されるフローティングディフュージョン部が共有化される4つの単位画素部を1単位として構成されている請求項1または2に記載の固体撮像素子。
- 前記4つの単位画素部のベイヤー配列の色を入れ替えて、該4つの単位画素部に上下および左右に隣接しかつ互いに隣接する4つの単位画素部を同色フィルタの単位画素部として構成する請求項7に記載の固体撮像素子。
- 前記4つの単位画素部からなる同色フィルタに対応する隣接単位画素部に蓄積された信号電荷は、低照度時に前記画素分離電極に所定の電圧を印加することにより1画素として一体化されて前記電荷転送手段から電荷転送が為され、高照度時に前記画素分離電極に所定の電圧を印加しないことにより該4つの単位画素部がそれぞれ独立して、該単位画素部に対応した電荷転送手段から電荷転送が為される請求項1または2に記載の固体撮像素子。
- 前記低照度時には、前記4つの単位画素部からなる同色フィルタに対応した隣接単位画素部毎に1箇所の電荷転送手段から電荷転送が為される請求項9に記載の固体撮像素子。
- 前記隣接する4つの単位画素部からなる隣接単位画素部上方には同色フィルタが形成されている請求項1または2に記載の固体撮像素子。
- 前記画素分離電極はゲート酸化膜およびその上のポリシリコン電極からなっている請求項1または2に記載の固体撮像素子。
- 前記電荷転送手段は、前記受光部の1つの角部に設けられている請求項2に記載の固体撮像素子。
- 前記受光部からフローティングディフュージョン部に電荷転送された信号電荷は、電圧信号に変換された後に増幅されて撮像信号として出力されるCMOS型固体撮像素子である請求項1または2に記載の固体撮像素子。
- 請求項1または2に記載の固体撮像素子を製造する方法であって、
前記電荷転送手段に接しない受光部の2辺に隣接しかつ互いに隣接する4つの単位画素部間に、該受光部とは逆導電型半導体領域を形成する逆導電型半導体領域形成工程と、
該逆導電型半導体領域上にゲート酸化膜を介してポリシリコン電極を前記画素分離電極として形成する画素分離電極工程とを有する固体撮像素子の製造方法。 - 前記4つの単位画素部からなる隣接単位画素部毎にそれぞれ対応するように、画素領域上の層間絶縁膜を介して、所定の色配列で赤色フィルタ、緑色フィルタおよび青色フィルタのうちのいずれかから順次形成するカラーフィルタ形成工程を更に有する請求項15に記載の固体撮像素子の製造方法。
- 請求項1〜14のいずれかに記載の固体撮像素子を画像入力デバイスとして撮像部に用いた電子情報機器。
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US13/141,567 US8946611B2 (en) | 2008-12-24 | 2009-12-18 | Solid-state imaging element and manufacturing method thereof, and electronic information device |
CN2009801574886A CN102334188B (zh) | 2008-12-24 | 2009-12-18 | 固态成像元件及其制造方法以及电子信息设备 |
PCT/JP2009/071180 WO2010074007A1 (ja) | 2008-12-24 | 2009-12-18 | 固体撮像素子およびその製造方法、電子情報機器 |
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US20120025060A1 (en) | 2012-02-02 |
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