JP2010153467A5 - - Google Patents

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Publication number
JP2010153467A5
JP2010153467A5 JP2008327708A JP2008327708A JP2010153467A5 JP 2010153467 A5 JP2010153467 A5 JP 2010153467A5 JP 2008327708 A JP2008327708 A JP 2008327708A JP 2008327708 A JP2008327708 A JP 2008327708A JP 2010153467 A5 JP2010153467 A5 JP 2010153467A5
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JP
Japan
Prior art keywords
support
substrate
holding
gap
conductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008327708A
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English (en)
Japanese (ja)
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JP2010153467A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008327708A priority Critical patent/JP2010153467A/ja
Priority claimed from JP2008327708A external-priority patent/JP2010153467A/ja
Priority to TW098144163A priority patent/TW201104748A/zh
Priority to US12/644,318 priority patent/US20100154711A1/en
Priority to CN200910260889A priority patent/CN101764049A/zh
Publication of JP2010153467A publication Critical patent/JP2010153467A/ja
Publication of JP2010153467A5 publication Critical patent/JP2010153467A5/ja
Pending legal-status Critical Current

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JP2008327708A 2008-12-24 2008-12-24 基板処理装置および半導体装置の製造方法 Pending JP2010153467A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008327708A JP2010153467A (ja) 2008-12-24 2008-12-24 基板処理装置および半導体装置の製造方法
TW098144163A TW201104748A (en) 2008-12-24 2009-12-22 Substrate processing apparatus
US12/644,318 US20100154711A1 (en) 2008-12-24 2009-12-22 Substrate processing apparatus
CN200910260889A CN101764049A (zh) 2008-12-24 2009-12-24 基板处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008327708A JP2010153467A (ja) 2008-12-24 2008-12-24 基板処理装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2010153467A JP2010153467A (ja) 2010-07-08
JP2010153467A5 true JP2010153467A5 (enExample) 2012-02-16

Family

ID=42264218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008327708A Pending JP2010153467A (ja) 2008-12-24 2008-12-24 基板処理装置および半導体装置の製造方法

Country Status (4)

Country Link
US (1) US20100154711A1 (enExample)
JP (1) JP2010153467A (enExample)
CN (1) CN101764049A (enExample)
TW (1) TW201104748A (enExample)

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JP5394360B2 (ja) * 2010-03-10 2014-01-22 東京エレクトロン株式会社 縦型熱処理装置およびその冷却方法
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JP5565242B2 (ja) * 2010-09-29 2014-08-06 東京エレクトロン株式会社 縦型熱処理装置
JP5243519B2 (ja) * 2010-12-22 2013-07-24 東京エレクトロン株式会社 成膜装置
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JP2013016635A (ja) * 2011-07-04 2013-01-24 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
KR101271247B1 (ko) * 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
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JP5966649B2 (ja) * 2012-06-18 2016-08-10 東京エレクトロン株式会社 熱処理装置
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KR101224520B1 (ko) * 2012-06-27 2013-01-22 (주)이노시티 프로세스 챔버
JP2014033143A (ja) * 2012-08-06 2014-02-20 Tokyo Electron Ltd 化合物半導体膜の成膜方法および成膜装置
JP2014033112A (ja) * 2012-08-03 2014-02-20 Tokyo Electron Ltd 化合物半導体膜の成膜方法および成膜装置
JP5922534B2 (ja) * 2012-09-10 2016-05-24 光洋サーモシステム株式会社 熱処理装置
KR101507557B1 (ko) * 2013-04-25 2015-04-07 주식회사 엔씨디 대면적 기판용 수평형 원자층 증착장치
CN104253077B (zh) * 2013-06-26 2017-08-25 上海华虹宏力半导体制造有限公司 一种用于扩散炉管的晶座
TWI648427B (zh) * 2013-07-17 2019-01-21 應用材料股份有限公司 用於交叉流動類型的熱ｃｖｄ腔室之改良的氣體活化的結構
JP6334880B2 (ja) * 2013-10-03 2018-05-30 Ｊｓｗアフティ株式会社 原子層堆積装置および原子層堆積方法
KR20160026572A (ko) 2014-09-01 2016-03-09 삼성전자주식회사 기판 처리 장치
US10375901B2 (en) 2014-12-09 2019-08-13 Mtd Products Inc Blower/vacuum
US10898987B2 (en) * 2015-06-01 2021-01-26 Ebara Corporation Table for holding workpiece and processing apparatus with the table
KR101715193B1 (ko) * 2015-07-20 2017-03-10 주식회사 유진테크 기판 처리장치
JP6472356B2 (ja) * 2015-09-11 2019-02-20 東京エレクトロン株式会社 熱処理装置
JP6590735B2 (ja) * 2016-03-04 2019-10-16 東京エレクトロン株式会社 混合ガス複数系統供給システム及びこれを用いた基板処理装置
FR3055468B1 (fr) * 2016-08-30 2018-11-16 Semco Tech Dispositif de traitement de pieces
WO2018086697A1 (en) * 2016-11-10 2018-05-17 Applied Materials, Inc. Vacuum deposition apparatus and method of depositing a layer on a substrate
JP6807246B2 (ja) * 2017-02-23 2021-01-06 東京エレクトロン株式会社 基板処理装置、および、処理システム
TWI635559B (zh) * 2017-07-25 2018-09-11 春田科技顧問股份有限公司 裝載埠的吹淨裝置及其吹淨方法
US10903103B2 (en) * 2018-01-22 2021-01-26 Nanya Technology Corporation Front opening unified pod
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KR20210044849A (ko) * 2018-09-20 2021-04-23 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
TWI723329B (zh) * 2019-01-19 2021-04-01 春田科技顧問股份有限公司 裝載埠及其氣簾裝置與吹淨方法
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JP7400461B2 (ja) * 2019-12-26 2023-12-19 株式会社レゾナック サセプタ
US11631604B2 (en) * 2020-07-17 2023-04-18 Nanya Technology Corporation Load port device, gas gate and gas-providing method
CN111863665B (zh) * 2020-07-31 2024-03-15 西安奕斯伟材料科技股份有限公司 一种硅片加热装置
JP2022075394A (ja) 2020-11-06 2022-05-18 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7290684B2 (ja) * 2021-03-26 2023-06-13 株式会社Kokusai Electric 反応管、処理装置、および半導体装置の製造方法
TW202326906A (zh) * 2021-11-02 2023-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體基板處理設備
JP7727566B2 (ja) * 2022-02-03 2025-08-21 新光電気工業株式会社 基板処理装置
KR20240001548A (ko) * 2022-06-27 2024-01-03 주식회사 원익아이피에스 기판처리장치
KR20250011634A (ko) * 2022-06-27 2025-01-21 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 기판 처리 방법 및 반도체 장치의 제조 방법
CN115142049B (zh) * 2022-07-28 2024-08-23 苏州涌真光电科技有限公司 具有叠加升降装置的cvd镀膜机
CN117116814B (zh) * 2023-10-23 2024-04-05 芯恺半导体设备(徐州)有限责任公司 基板处理设备

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GB9317170D0 (en) * 1993-08-18 1993-10-06 Applied Vision Ltd Improvements in physical vapour deposition apparatus
JP3296300B2 (ja) * 1998-08-07 2002-06-24 ウシオ電機株式会社 光照射式加熱装置
KR100829327B1 (ko) * 2002-04-05 2008-05-13 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반응 용기
US7422635B2 (en) * 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
JP4312204B2 (ja) * 2003-11-27 2009-08-12 株式会社日立国際電気 基板処理装置、基板保持具、及び半導体装置の製造方法

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