JP2008138283A5 - - Google Patents

Download PDF

Info

Publication number
JP2008138283A5
JP2008138283A5 JP2007276150A JP2007276150A JP2008138283A5 JP 2008138283 A5 JP2008138283 A5 JP 2008138283A5 JP 2007276150 A JP2007276150 A JP 2007276150A JP 2007276150 A JP2007276150 A JP 2007276150A JP 2008138283 A5 JP2008138283 A5 JP 2008138283A5
Authority
JP
Japan
Prior art keywords
substrate
large area
substrate support
conductive body
raised regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007276150A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008138283A (ja
JP5578762B2 (ja
Filing date
Publication date
Priority claimed from US11/566,113 external-priority patent/US20080131622A1/en
Application filed filed Critical
Publication of JP2008138283A publication Critical patent/JP2008138283A/ja
Publication of JP2008138283A5 publication Critical patent/JP2008138283A5/ja
Application granted granted Critical
Publication of JP5578762B2 publication Critical patent/JP5578762B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007276150A 2006-12-01 2007-10-24 表面テクスチャリングを組み込んだプラズマリアクタ基板 Expired - Fee Related JP5578762B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/566,113 US20080131622A1 (en) 2006-12-01 2006-12-01 Plasma reactor substrate mounting surface texturing
US11/566113 2006-12-01

Publications (3)

Publication Number Publication Date
JP2008138283A JP2008138283A (ja) 2008-06-19
JP2008138283A5 true JP2008138283A5 (enExample) 2010-12-09
JP5578762B2 JP5578762B2 (ja) 2014-08-27

Family

ID=39232835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007276150A Expired - Fee Related JP5578762B2 (ja) 2006-12-01 2007-10-24 表面テクスチャリングを組み込んだプラズマリアクタ基板

Country Status (7)

Country Link
US (2) US20080131622A1 (enExample)
EP (1) EP1928017B1 (enExample)
JP (1) JP5578762B2 (enExample)
KR (1) KR100939588B1 (enExample)
CN (1) CN101191203B (enExample)
DE (1) DE602007006397D1 (enExample)
TW (1) TWI354349B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing
US7964430B2 (en) * 2007-05-23 2011-06-21 Applied Materials, Inc. Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications
US20080289686A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications
WO2009117514A1 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Susceptor with roll-formed surface and method for making same
US20100059182A1 (en) * 2008-09-05 2010-03-11 Jusung Engineering Co., Ltd. Substrate processing apparatus
US20100180426A1 (en) * 2009-01-21 2010-07-22 Applied Materials, Inc. Particle reduction treatment for gas delivery system
US20120154974A1 (en) * 2010-12-16 2012-06-21 Applied Materials, Inc. High efficiency electrostatic chuck assembly for semiconductor wafer processing
CN103908934A (zh) * 2013-11-28 2014-07-09 大连隆星新材料有限公司 聚乙烯蜡微粉制备装置
US10434604B2 (en) 2016-10-14 2019-10-08 Applied Materials, Inc. Texturizing a surface without bead blasting
KR20250007702A (ko) * 2018-04-17 2025-01-14 어플라이드 머티어리얼스, 인코포레이티드 비드 블라스팅을 이용하지 않는 표면의 텍스처라이징
CN110349828B (zh) * 2019-06-20 2021-12-03 Tcl华星光电技术有限公司 干蚀刻设备

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801785A (en) * 1986-01-14 1989-01-31 Raychem Corporation Electrical devices
US5200157A (en) * 1986-02-17 1993-04-06 Toshiba Ceramics Co., Ltd. Susceptor for vapor-growth deposition
US5096536A (en) * 1990-06-12 1992-03-17 Micron Technology, Inc. Method and apparatus useful in the plasma etching of semiconductor materials
US4974369A (en) * 1990-06-28 1990-12-04 William Dixon Two-dimensionally grooved sanding pad
US5104514A (en) * 1991-05-16 1992-04-14 The United States Of America As Represented By The Secretary Of The Navy Protective coating system for aluminum
US5384682A (en) * 1993-03-22 1995-01-24 Toto Ltd. Electrostatic chuck
US5581874A (en) * 1994-03-28 1996-12-10 Tokyo Electron Limited Method of forming a bonding portion
US5531835A (en) * 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US5548470A (en) * 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
US5583736A (en) * 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
US5844205A (en) * 1996-04-19 1998-12-01 Applied Komatsu Technology, Inc. Heated substrate support structure
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
CH692520A5 (de) * 1997-04-24 2002-07-15 Mettler Toledo Gmbh Verfahren zur Herstellung einer umlaufenden mediumsdichten Verbindung zwischen koaxialen Glasrohren unter Einschluss einer elektrischen Leiterbahn und elektrochemischer Sensor damit.
JP3160229B2 (ja) * 1997-06-06 2001-04-25 日本エー・エス・エム株式会社 プラズマｃｖｄ装置用サセプタ及びその製造方法
US6024044A (en) * 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
JP3283459B2 (ja) * 1997-12-17 2002-05-20 日本エー・エス・エム株式会社 半導体処理用の基板保持装置
US6064031A (en) * 1998-03-20 2000-05-16 Mcdonnell Douglas Corporation Selective metal matrix composite reinforcement by laser deposition
FR2783970B1 (fr) * 1998-09-25 2000-11-03 Commissariat Energie Atomique Dispositif autorisant le traitement d'un substrat dans une machine prevue pour traiter de plus grands substrats et systeme de montage d'un substrat dans ce dispositif
JP2001209981A (ja) * 1999-02-09 2001-08-03 Ricoh Co Ltd 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク
JP3911902B2 (ja) * 1999-04-16 2007-05-09 東京エレクトロン株式会社 処理装置及び金属部品の表面処理方法
JP3293801B2 (ja) * 1999-06-22 2002-06-17 九州日本電気株式会社 枚葉式プラズマアッシング装置
US6423175B1 (en) * 1999-10-06 2002-07-23 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for reducing particle contamination in an etcher
US6196001B1 (en) * 1999-10-12 2001-03-06 Alliedsignal Inc. Environment controlled WIP cart
TW473792B (en) * 2000-01-20 2002-01-21 Ngk Insulators Ltd Electrostatic chuck
ATE280436T1 (de) * 2000-06-22 2004-11-15 Unaxis Balzers Ag Beschichtungsanlage für scheibenförmige werkstücke
US7094670B2 (en) * 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
SG106588A1 (en) * 2000-10-10 2004-10-29 Inst Data Storage Method for producing thin film magnetic devices having increased orientation ratio
JP2002134487A (ja) * 2000-10-25 2002-05-10 Hitachi Ltd 半導体装置の製造方法
JP3758979B2 (ja) * 2001-02-27 2006-03-22 京セラ株式会社 静電チャック及び処理装置
JP2002334921A (ja) * 2001-05-10 2002-11-22 Matsushita Electric Ind Co Ltd プラズマ処理装置
US6510888B1 (en) * 2001-08-01 2003-01-28 Applied Materials, Inc. Substrate support and method of fabricating the same
JP4040423B2 (ja) * 2002-10-16 2008-01-30 キヤノン株式会社 基板保持装置
KR20040036984A (ko) 2002-10-25 2004-05-04 엘지.필립스 엘시디 주식회사 플라즈마 에칭챔버의 아크발생 방지구조
US20040221959A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
US8372205B2 (en) * 2003-05-09 2013-02-12 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
JP2005018992A (ja) 2003-06-23 2005-01-20 Ibiden Co Ltd プラズマ発生装置用電極埋設部材
US7375946B2 (en) * 2004-08-16 2008-05-20 Applied Materials, Inc. Method and apparatus for dechucking a substrate
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US8173228B2 (en) * 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing

Similar Documents

Publication Publication Date Title
JP2008138283A5 (enExample)
TWI503440B (zh) 石墨烯導電膜結構的製備方法
TWI354349B (en) Plasma reactor substrate mounting surface texturin
JP5134120B2 (ja) 熱音響装置の製造方法
CN201817546U (zh) 衬底支撑基座和应用该衬底支撑基座的化学气相沉积设备
JP2007515081A5 (enExample)
CN203084388U (zh) 一种下部电极
TW201113389A (en) Method of coating substrate
TWI527929B (zh) 具有滾軋成型表面之基座和其製造方法
CN109786312A (zh) 一种太阳能电池载板
TWI456679B (zh) 抗電漿腐蝕之反應室部件、其製造方法以及包含該部件之電漿反應室
KR100975637B1 (ko) 탄소나노튜브를 이용한 고효율 서셉터 및 그 제조방법
JP2011515854A5 (enExample)
TW201236515A (en) Atmospheric plasma generator
CN103149751A (zh) 一种下部电极及其制作方法
CN204410589U (zh) 电加热盘及电饭煲
CN113784465A (zh) 电热膜及电热装置
JP2012015036A (ja) プレートヒータ
TWI387664B (zh) Plasma process equipment
CN204670947U (zh) 电加热盘及电饭煲
CN202683433U (zh) 提高涂层与基体界面结合强度的仿生基体表面结构
US20120118871A1 (en) Heating structure
CN202127001U (zh) 一种反应离子刻蚀设备
CN204434289U (zh) 一种用于转移石墨烯薄膜的生产工装装置
CN113122826B (zh) 一种pecvd设备加热装置