CN101191203B - 等离子体反应器基板安装表面纹理化 - Google Patents

等离子体反应器基板安装表面纹理化 Download PDF

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Publication number
CN101191203B
CN101191203B CN2007101653541A CN200710165354A CN101191203B CN 101191203 B CN101191203 B CN 101191203B CN 2007101653541 A CN2007101653541 A CN 2007101653541A CN 200710165354 A CN200710165354 A CN 200710165354A CN 101191203 B CN101191203 B CN 101191203B
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China
Prior art keywords
substrate holder
raised areas
electric conductor
area substrates
holder according
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Expired - Fee Related
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CN2007101653541A
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English (en)
Chinese (zh)
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CN101191203A (zh
Inventor
约翰·M·怀特
志飞·叶
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN2007101653541A 2006-12-01 2007-10-26 等离子体反应器基板安装表面纹理化 Expired - Fee Related CN101191203B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/566,113 2006-12-01
US11/566,113 US20080131622A1 (en) 2006-12-01 2006-12-01 Plasma reactor substrate mounting surface texturing

Publications (2)

Publication Number Publication Date
CN101191203A CN101191203A (zh) 2008-06-04
CN101191203B true CN101191203B (zh) 2010-12-01

Family

ID=39232835

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101653541A Expired - Fee Related CN101191203B (zh) 2006-12-01 2007-10-26 等离子体反应器基板安装表面纹理化

Country Status (7)

Country Link
US (2) US20080131622A1 (enExample)
EP (1) EP1928017B1 (enExample)
JP (1) JP5578762B2 (enExample)
KR (1) KR100939588B1 (enExample)
CN (1) CN101191203B (enExample)
DE (1) DE602007006397D1 (enExample)
TW (1) TWI354349B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI741280B (zh) 2018-04-17 2021-10-01 美商應用材料股份有限公司 用以為使用在半導體處理腔室中的部件的表面提供紋理的系統及其方法
US12318868B2 (en) 2016-10-14 2025-06-03 Applied Materials, Inc. Texturizing a surface without bead blasting

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* Cited by examiner, † Cited by third party
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US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing
US7964430B2 (en) * 2007-05-23 2011-06-21 Applied Materials, Inc. Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications
US20080289686A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications
CN101978473B (zh) * 2008-03-20 2015-11-25 应用材料公司 具有滚轧成型表面的基座和制造所述基座的方法
US20100059182A1 (en) * 2008-09-05 2010-03-11 Jusung Engineering Co., Ltd. Substrate processing apparatus
US20100180426A1 (en) * 2009-01-21 2010-07-22 Applied Materials, Inc. Particle reduction treatment for gas delivery system
US20120154974A1 (en) * 2010-12-16 2012-06-21 Applied Materials, Inc. High efficiency electrostatic chuck assembly for semiconductor wafer processing
CN103908934A (zh) * 2013-11-28 2014-07-09 大连隆星新材料有限公司 聚乙烯蜡微粉制备装置
CN110349828B (zh) * 2019-06-20 2021-12-03 Tcl华星光电技术有限公司 干蚀刻设备

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US5104514A (en) * 1991-05-16 1992-04-14 The United States Of America As Represented By The Secretary Of The Navy Protective coating system for aluminum
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JP3160229B2 (ja) * 1997-06-06 2001-04-25 日本エー・エス・エム株式会社 プラズマｃｖｄ装置用サセプタ及びその製造方法
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JP2001209981A (ja) * 1999-02-09 2001-08-03 Ricoh Co Ltd 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12318868B2 (en) 2016-10-14 2025-06-03 Applied Materials, Inc. Texturizing a surface without bead blasting
TWI741280B (zh) 2018-04-17 2021-10-01 美商應用材料股份有限公司 用以為使用在半導體處理腔室中的部件的表面提供紋理的系統及其方法

Also Published As

Publication number Publication date
CN101191203A (zh) 2008-06-04
EP1928017B1 (en) 2010-05-12
TW200828493A (en) 2008-07-01
TWI354349B (en) 2011-12-11
JP5578762B2 (ja) 2014-08-27
DE602007006397D1 (de) 2010-06-24
EP1928017A1 (en) 2008-06-04
KR100939588B1 (ko) 2010-02-01
JP2008138283A (ja) 2008-06-19
KR20080050304A (ko) 2008-06-05
US20100144160A1 (en) 2010-06-10
US20080131622A1 (en) 2008-06-05

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SE01 Entry into force of request for substantive examination
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Address after: California, USA

Patentee after: APPLIED MATERIALS, Inc.

Address before: California, USA

Patentee before: APPLIED MATERIALS, Inc.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101201

Termination date: 20211026

CF01 Termination of patent right due to non-payment of annual fee