CN101191203B - 等离子体反应器基板安装表面纹理化 - Google Patents

等离子体反应器基板安装表面纹理化 Download PDF

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Publication number
CN101191203B
CN101191203B CN2007101653541A CN200710165354A CN101191203B CN 101191203 B CN101191203 B CN 101191203B CN 2007101653541 A CN2007101653541 A CN 2007101653541A CN 200710165354 A CN200710165354 A CN 200710165354A CN 101191203 B CN101191203 B CN 101191203B
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CN
China
Prior art keywords
substrate
top surface
large area
electrical conductor
raised
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2007101653541A
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English (en)
Chinese (zh)
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CN101191203A (zh
Inventor
约翰·M·怀特
志飞·叶
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN101191203A publication Critical patent/CN101191203A/zh
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Publication of CN101191203B publication Critical patent/CN101191203B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7622—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN2007101653541A 2006-12-01 2007-10-26 等离子体反应器基板安装表面纹理化 Expired - Fee Related CN101191203B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/566,113 US20080131622A1 (en) 2006-12-01 2006-12-01 Plasma reactor substrate mounting surface texturing
US11/566,113 2006-12-01

Publications (2)

Publication Number Publication Date
CN101191203A CN101191203A (zh) 2008-06-04
CN101191203B true CN101191203B (zh) 2010-12-01

Family

ID=39232835

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101653541A Expired - Fee Related CN101191203B (zh) 2006-12-01 2007-10-26 等离子体反应器基板安装表面纹理化

Country Status (7)

Country Link
US (2) US20080131622A1 (enExample)
EP (1) EP1928017B1 (enExample)
JP (1) JP5578762B2 (enExample)
KR (1) KR100939588B1 (enExample)
CN (1) CN101191203B (enExample)
DE (1) DE602007006397D1 (enExample)
TW (1) TWI354349B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI741280B (zh) 2018-04-17 2021-10-01 美商應用材料股份有限公司 用以為使用在半導體處理腔室中的部件的表面提供紋理的系統及其方法
US12318868B2 (en) 2016-10-14 2025-06-03 Applied Materials, Inc. Texturizing a surface without bead blasting

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US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing
US7964430B2 (en) * 2007-05-23 2011-06-21 Applied Materials, Inc. Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications
US20080289686A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications
WO2009117514A1 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Susceptor with roll-formed surface and method for making same
US20100059182A1 (en) * 2008-09-05 2010-03-11 Jusung Engineering Co., Ltd. Substrate processing apparatus
US20100180426A1 (en) * 2009-01-21 2010-07-22 Applied Materials, Inc. Particle reduction treatment for gas delivery system
US20120154974A1 (en) * 2010-12-16 2012-06-21 Applied Materials, Inc. High efficiency electrostatic chuck assembly for semiconductor wafer processing
CN103908934A (zh) * 2013-11-28 2014-07-09 大连隆星新材料有限公司 聚乙烯蜡微粉制备装置
CN110349828B (zh) * 2019-06-20 2021-12-03 Tcl华星光电技术有限公司 干蚀刻设备

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US5200157A (en) * 1986-02-17 1993-04-06 Toshiba Ceramics Co., Ltd. Susceptor for vapor-growth deposition
US5096536A (en) * 1990-06-12 1992-03-17 Micron Technology, Inc. Method and apparatus useful in the plasma etching of semiconductor materials
US4974369A (en) * 1990-06-28 1990-12-04 William Dixon Two-dimensionally grooved sanding pad
US5104514A (en) * 1991-05-16 1992-04-14 The United States Of America As Represented By The Secretary Of The Navy Protective coating system for aluminum
US5384682A (en) * 1993-03-22 1995-01-24 Toto Ltd. Electrostatic chuck
US5581874A (en) * 1994-03-28 1996-12-10 Tokyo Electron Limited Method of forming a bonding portion
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CH692520A5 (de) * 1997-04-24 2002-07-15 Mettler Toledo Gmbh Verfahren zur Herstellung einer umlaufenden mediumsdichten Verbindung zwischen koaxialen Glasrohren unter Einschluss einer elektrischen Leiterbahn und elektrochemischer Sensor damit.
JP3160229B2 (ja) * 1997-06-06 2001-04-25 日本エー・エス・エム株式会社 プラズマｃｖｄ装置用サセプタ及びその製造方法
US6024044A (en) * 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
JP3283459B2 (ja) * 1997-12-17 2002-05-20 日本エー・エス・エム株式会社 半導体処理用の基板保持装置
US6064031A (en) * 1998-03-20 2000-05-16 Mcdonnell Douglas Corporation Selective metal matrix composite reinforcement by laser deposition
FR2783970B1 (fr) * 1998-09-25 2000-11-03 Commissariat Energie Atomique Dispositif autorisant le traitement d'un substrat dans une machine prevue pour traiter de plus grands substrats et systeme de montage d'un substrat dans ce dispositif
JP2001209981A (ja) * 1999-02-09 2001-08-03 Ricoh Co Ltd 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク
JP3911902B2 (ja) * 1999-04-16 2007-05-09 東京エレクトロン株式会社 処理装置及び金属部品の表面処理方法
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US6423175B1 (en) * 1999-10-06 2002-07-23 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for reducing particle contamination in an etcher
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US8372205B2 (en) * 2003-05-09 2013-02-12 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
JP2005018992A (ja) 2003-06-23 2005-01-20 Ibiden Co Ltd プラズマ発生装置用電極埋設部材
US7375946B2 (en) * 2004-08-16 2008-05-20 Applied Materials, Inc. Method and apparatus for dechucking a substrate
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US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12318868B2 (en) 2016-10-14 2025-06-03 Applied Materials, Inc. Texturizing a surface without bead blasting
TWI741280B (zh) 2018-04-17 2021-10-01 美商應用材料股份有限公司 用以為使用在半導體處理腔室中的部件的表面提供紋理的系統及其方法

Also Published As

Publication number Publication date
KR100939588B1 (ko) 2010-02-01
JP2008138283A (ja) 2008-06-19
DE602007006397D1 (de) 2010-06-24
US20080131622A1 (en) 2008-06-05
US20100144160A1 (en) 2010-06-10
JP5578762B2 (ja) 2014-08-27
KR20080050304A (ko) 2008-06-05
TW200828493A (en) 2008-07-01
TWI354349B (en) 2011-12-11
EP1928017A1 (en) 2008-06-04
CN101191203A (zh) 2008-06-04
EP1928017B1 (en) 2010-05-12

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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GR01 Patent grant
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: California, USA

Patentee after: APPLIED MATERIALS, Inc.

Address before: California, USA

Patentee before: APPLIED MATERIALS, Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101201

Termination date: 20211026