JP5578762B2 - 表面テクスチャリングを組み込んだプラズマリアクタ基板 - Google Patents

表面テクスチャリングを組み込んだプラズマリアクタ基板 Download PDF

Info

Publication number
JP5578762B2
JP5578762B2 JP2007276150A JP2007276150A JP5578762B2 JP 5578762 B2 JP5578762 B2 JP 5578762B2 JP 2007276150 A JP2007276150 A JP 2007276150A JP 2007276150 A JP2007276150 A JP 2007276150A JP 5578762 B2 JP5578762 B2 JP 5578762B2
Authority
JP
Japan
Prior art keywords
substrate
raised
substrate support
conductive body
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007276150A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008138283A (ja
JP2008138283A5 (enExample
Inventor
エム ホワイト ジョン
イエ ズヒフェイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2008138283A publication Critical patent/JP2008138283A/ja
Publication of JP2008138283A5 publication Critical patent/JP2008138283A5/ja
Application granted granted Critical
Publication of JP5578762B2 publication Critical patent/JP5578762B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007276150A 2006-12-01 2007-10-24 表面テクスチャリングを組み込んだプラズマリアクタ基板 Expired - Fee Related JP5578762B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/566,113 US20080131622A1 (en) 2006-12-01 2006-12-01 Plasma reactor substrate mounting surface texturing
US11/566113 2006-12-01

Publications (3)

Publication Number Publication Date
JP2008138283A JP2008138283A (ja) 2008-06-19
JP2008138283A5 JP2008138283A5 (enExample) 2010-12-09
JP5578762B2 true JP5578762B2 (ja) 2014-08-27

Family

ID=39232835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007276150A Expired - Fee Related JP5578762B2 (ja) 2006-12-01 2007-10-24 表面テクスチャリングを組み込んだプラズマリアクタ基板

Country Status (7)

Country Link
US (2) US20080131622A1 (enExample)
EP (1) EP1928017B1 (enExample)
JP (1) JP5578762B2 (enExample)
KR (1) KR100939588B1 (enExample)
CN (1) CN101191203B (enExample)
DE (1) DE602007006397D1 (enExample)
TW (1) TWI354349B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing
US7964430B2 (en) * 2007-05-23 2011-06-21 Applied Materials, Inc. Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications
US20080289686A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications
WO2009117514A1 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Susceptor with roll-formed surface and method for making same
US20100059182A1 (en) * 2008-09-05 2010-03-11 Jusung Engineering Co., Ltd. Substrate processing apparatus
US20100180426A1 (en) * 2009-01-21 2010-07-22 Applied Materials, Inc. Particle reduction treatment for gas delivery system
US20120154974A1 (en) * 2010-12-16 2012-06-21 Applied Materials, Inc. High efficiency electrostatic chuck assembly for semiconductor wafer processing
CN103908934A (zh) * 2013-11-28 2014-07-09 大连隆星新材料有限公司 聚乙烯蜡微粉制备装置
US10434604B2 (en) 2016-10-14 2019-10-08 Applied Materials, Inc. Texturizing a surface without bead blasting
KR20250007702A (ko) * 2018-04-17 2025-01-14 어플라이드 머티어리얼스, 인코포레이티드 비드 블라스팅을 이용하지 않는 표면의 텍스처라이징
CN110349828B (zh) * 2019-06-20 2021-12-03 Tcl华星光电技术有限公司 干蚀刻设备

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801785A (en) * 1986-01-14 1989-01-31 Raychem Corporation Electrical devices
US5200157A (en) * 1986-02-17 1993-04-06 Toshiba Ceramics Co., Ltd. Susceptor for vapor-growth deposition
US5096536A (en) * 1990-06-12 1992-03-17 Micron Technology, Inc. Method and apparatus useful in the plasma etching of semiconductor materials
US4974369A (en) * 1990-06-28 1990-12-04 William Dixon Two-dimensionally grooved sanding pad
US5104514A (en) * 1991-05-16 1992-04-14 The United States Of America As Represented By The Secretary Of The Navy Protective coating system for aluminum
US5384682A (en) * 1993-03-22 1995-01-24 Toto Ltd. Electrostatic chuck
US5581874A (en) * 1994-03-28 1996-12-10 Tokyo Electron Limited Method of forming a bonding portion
US5531835A (en) * 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US5548470A (en) * 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
US5583736A (en) * 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
US5844205A (en) * 1996-04-19 1998-12-01 Applied Komatsu Technology, Inc. Heated substrate support structure
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
CH692520A5 (de) * 1997-04-24 2002-07-15 Mettler Toledo Gmbh Verfahren zur Herstellung einer umlaufenden mediumsdichten Verbindung zwischen koaxialen Glasrohren unter Einschluss einer elektrischen Leiterbahn und elektrochemischer Sensor damit.
JP3160229B2 (ja) * 1997-06-06 2001-04-25 日本エー・エス・エム株式会社 プラズマｃｖｄ装置用サセプタ及びその製造方法
US6024044A (en) * 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
JP3283459B2 (ja) * 1997-12-17 2002-05-20 日本エー・エス・エム株式会社 半導体処理用の基板保持装置
US6064031A (en) * 1998-03-20 2000-05-16 Mcdonnell Douglas Corporation Selective metal matrix composite reinforcement by laser deposition
FR2783970B1 (fr) * 1998-09-25 2000-11-03 Commissariat Energie Atomique Dispositif autorisant le traitement d'un substrat dans une machine prevue pour traiter de plus grands substrats et systeme de montage d'un substrat dans ce dispositif
JP2001209981A (ja) * 1999-02-09 2001-08-03 Ricoh Co Ltd 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク
JP3911902B2 (ja) * 1999-04-16 2007-05-09 東京エレクトロン株式会社 処理装置及び金属部品の表面処理方法
JP3293801B2 (ja) * 1999-06-22 2002-06-17 九州日本電気株式会社 枚葉式プラズマアッシング装置
US6423175B1 (en) * 1999-10-06 2002-07-23 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for reducing particle contamination in an etcher
US6196001B1 (en) * 1999-10-12 2001-03-06 Alliedsignal Inc. Environment controlled WIP cart
TW473792B (en) * 2000-01-20 2002-01-21 Ngk Insulators Ltd Electrostatic chuck
ATE280436T1 (de) * 2000-06-22 2004-11-15 Unaxis Balzers Ag Beschichtungsanlage für scheibenförmige werkstücke
US7094670B2 (en) * 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
SG106588A1 (en) * 2000-10-10 2004-10-29 Inst Data Storage Method for producing thin film magnetic devices having increased orientation ratio
JP2002134487A (ja) * 2000-10-25 2002-05-10 Hitachi Ltd 半導体装置の製造方法
JP3758979B2 (ja) * 2001-02-27 2006-03-22 京セラ株式会社 静電チャック及び処理装置
JP2002334921A (ja) * 2001-05-10 2002-11-22 Matsushita Electric Ind Co Ltd プラズマ処理装置
US6510888B1 (en) * 2001-08-01 2003-01-28 Applied Materials, Inc. Substrate support and method of fabricating the same
JP4040423B2 (ja) * 2002-10-16 2008-01-30 キヤノン株式会社 基板保持装置
KR20040036984A (ko) 2002-10-25 2004-05-04 엘지.필립스 엘시디 주식회사 플라즈마 에칭챔버의 아크발생 방지구조
US20040221959A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
US8372205B2 (en) * 2003-05-09 2013-02-12 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
JP2005018992A (ja) 2003-06-23 2005-01-20 Ibiden Co Ltd プラズマ発生装置用電極埋設部材
US7375946B2 (en) * 2004-08-16 2008-05-20 Applied Materials, Inc. Method and apparatus for dechucking a substrate
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US8173228B2 (en) * 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing

Also Published As

Publication number Publication date
KR20080050304A (ko) 2008-06-05
CN101191203B (zh) 2010-12-01
EP1928017A1 (en) 2008-06-04
DE602007006397D1 (de) 2010-06-24
EP1928017B1 (en) 2010-05-12
TWI354349B (en) 2011-12-11
JP2008138283A (ja) 2008-06-19
KR100939588B1 (ko) 2010-02-01
US20100144160A1 (en) 2010-06-10
TW200828493A (en) 2008-07-01
CN101191203A (zh) 2008-06-04
US20080131622A1 (en) 2008-06-05

Similar Documents

Publication Publication Date Title
JP5578762B2 (ja) 表面テクスチャリングを組み込んだプラズマリアクタ基板
CN100385640C (zh) 阳极化衬底支撑件
US8372205B2 (en) Reducing electrostatic charge by roughening the susceptor
KR100431658B1 (ko) 기판 가열 장치 및 이를 갖는 장치
US8709162B2 (en) Active cooling substrate support
US7083702B2 (en) RF current return path for a large area substrate plasma reactor
JP2005051200A5 (enExample)
JP6010296B2 (ja) 静電チャック
JP2020017700A (ja) 基板処理装置及び基板処理制御方法
CN1897784B (zh) 通过粗糙化基座减少静电放电
JP5745394B2 (ja) 基板支持体、プラズマ反応装置、および、サセプターを形成する方法
TWI455192B (zh) 避免在ｐｅｃｖｄ製程腔壁上沉積薄膜的設備及方法
JP7785982B2 (ja) 基板載置台の研磨方法及び基板載置台
JP7619862B2 (ja) 基板載置台の研磨方法及び基板処理装置
JP2003045854A (ja) プラズマ処理方法及び装置
JPH0837178A (ja) アッシング装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101023

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101023

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111221

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121018

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121030

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130128

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130131

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130227

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130304

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130329

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130403

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130429

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130723

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131021

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131024

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131122

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131127

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131222

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131227

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140122

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140610

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140708

R150 Certificate of patent or registration of utility model

Ref document number: 5578762

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees