TWI354349B - Plasma reactor substrate mounting surface texturin - Google Patents
Plasma reactor substrate mounting surface texturin Download PDFInfo
- Publication number
- TWI354349B TWI354349B TW096140130A TW96140130A TWI354349B TW I354349 B TWI354349 B TW I354349B TW 096140130 A TW096140130 A TW 096140130A TW 96140130 A TW96140130 A TW 96140130A TW I354349 B TWI354349 B TW I354349B
- Authority
- TW
- Taiwan
- Prior art keywords
- rti
- top surface
- substrate
- substrate support
- conductive body
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 61
- 238000010438 heat treatment Methods 0.000 claims description 8
- 230000000994 depressogenic effect Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 238000004049 embossing Methods 0.000 claims 1
- 230000003014 reinforcing effect Effects 0.000 claims 1
- 238000006748 scratching Methods 0.000 claims 1
- 230000002393 scratching effect Effects 0.000 claims 1
- 239000003351 stiffener Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/566,113 US20080131622A1 (en) | 2006-12-01 | 2006-12-01 | Plasma reactor substrate mounting surface texturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200828493A TW200828493A (en) | 2008-07-01 |
| TWI354349B true TWI354349B (en) | 2011-12-11 |
Family
ID=39232835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096140130A TWI354349B (en) | 2006-12-01 | 2007-10-25 | Plasma reactor substrate mounting surface texturin |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20080131622A1 (enExample) |
| EP (1) | EP1928017B1 (enExample) |
| JP (1) | JP5578762B2 (enExample) |
| KR (1) | KR100939588B1 (enExample) |
| CN (1) | CN101191203B (enExample) |
| DE (1) | DE602007006397D1 (enExample) |
| TW (1) | TWI354349B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080131622A1 (en) * | 2006-12-01 | 2008-06-05 | White John M | Plasma reactor substrate mounting surface texturing |
| US7964430B2 (en) * | 2007-05-23 | 2011-06-21 | Applied Materials, Inc. | Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications |
| US20080289686A1 (en) * | 2007-05-23 | 2008-11-27 | Tae Kyung Won | Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications |
| WO2009117514A1 (en) * | 2008-03-20 | 2009-09-24 | Applied Materials, Inc. | Susceptor with roll-formed surface and method for making same |
| US20100059182A1 (en) * | 2008-09-05 | 2010-03-11 | Jusung Engineering Co., Ltd. | Substrate processing apparatus |
| US20100180426A1 (en) * | 2009-01-21 | 2010-07-22 | Applied Materials, Inc. | Particle reduction treatment for gas delivery system |
| US20120154974A1 (en) * | 2010-12-16 | 2012-06-21 | Applied Materials, Inc. | High efficiency electrostatic chuck assembly for semiconductor wafer processing |
| CN103908934A (zh) * | 2013-11-28 | 2014-07-09 | 大连隆星新材料有限公司 | 聚乙烯蜡微粉制备装置 |
| US10434604B2 (en) | 2016-10-14 | 2019-10-08 | Applied Materials, Inc. | Texturizing a surface without bead blasting |
| KR20250007702A (ko) * | 2018-04-17 | 2025-01-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 비드 블라스팅을 이용하지 않는 표면의 텍스처라이징 |
| CN110349828B (zh) * | 2019-06-20 | 2021-12-03 | Tcl华星光电技术有限公司 | 干蚀刻设备 |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4801785A (en) * | 1986-01-14 | 1989-01-31 | Raychem Corporation | Electrical devices |
| US5200157A (en) * | 1986-02-17 | 1993-04-06 | Toshiba Ceramics Co., Ltd. | Susceptor for vapor-growth deposition |
| US5096536A (en) * | 1990-06-12 | 1992-03-17 | Micron Technology, Inc. | Method and apparatus useful in the plasma etching of semiconductor materials |
| US4974369A (en) * | 1990-06-28 | 1990-12-04 | William Dixon | Two-dimensionally grooved sanding pad |
| US5104514A (en) * | 1991-05-16 | 1992-04-14 | The United States Of America As Represented By The Secretary Of The Navy | Protective coating system for aluminum |
| US5384682A (en) * | 1993-03-22 | 1995-01-24 | Toto Ltd. | Electrostatic chuck |
| US5581874A (en) * | 1994-03-28 | 1996-12-10 | Tokyo Electron Limited | Method of forming a bonding portion |
| US5531835A (en) * | 1994-05-18 | 1996-07-02 | Applied Materials, Inc. | Patterned susceptor to reduce electrostatic force in a CVD chamber |
| US5548470A (en) * | 1994-07-19 | 1996-08-20 | International Business Machines Corporation | Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity |
| US5583736A (en) * | 1994-11-17 | 1996-12-10 | The United States Of America As Represented By The Department Of Energy | Micromachined silicon electrostatic chuck |
| US5844205A (en) * | 1996-04-19 | 1998-12-01 | Applied Komatsu Technology, Inc. | Heated substrate support structure |
| US6055927A (en) * | 1997-01-14 | 2000-05-02 | Applied Komatsu Technology, Inc. | Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology |
| CH692520A5 (de) * | 1997-04-24 | 2002-07-15 | Mettler Toledo Gmbh | Verfahren zur Herstellung einer umlaufenden mediumsdichten Verbindung zwischen koaxialen Glasrohren unter Einschluss einer elektrischen Leiterbahn und elektrochemischer Sensor damit. |
| JP3160229B2 (ja) * | 1997-06-06 | 2001-04-25 | 日本エー・エス・エム株式会社 | プラズマｃｖｄ装置用サセプタ及びその製造方法 |
| US6024044A (en) * | 1997-10-09 | 2000-02-15 | Applied Komatsu Technology, Inc. | Dual frequency excitation of plasma for film deposition |
| JP3283459B2 (ja) * | 1997-12-17 | 2002-05-20 | 日本エー・エス・エム株式会社 | 半導体処理用の基板保持装置 |
| US6064031A (en) * | 1998-03-20 | 2000-05-16 | Mcdonnell Douglas Corporation | Selective metal matrix composite reinforcement by laser deposition |
| FR2783970B1 (fr) * | 1998-09-25 | 2000-11-03 | Commissariat Energie Atomique | Dispositif autorisant le traitement d'un substrat dans une machine prevue pour traiter de plus grands substrats et systeme de montage d'un substrat dans ce dispositif |
| JP2001209981A (ja) * | 1999-02-09 | 2001-08-03 | Ricoh Co Ltd | 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク |
| JP3911902B2 (ja) * | 1999-04-16 | 2007-05-09 | 東京エレクトロン株式会社 | 処理装置及び金属部品の表面処理方法 |
| JP3293801B2 (ja) * | 1999-06-22 | 2002-06-17 | 九州日本電気株式会社 | 枚葉式プラズマアッシング装置 |
| US6423175B1 (en) * | 1999-10-06 | 2002-07-23 | Taiwan Semiconductor Manufacturing Co., Ltd | Apparatus and method for reducing particle contamination in an etcher |
| US6196001B1 (en) * | 1999-10-12 | 2001-03-06 | Alliedsignal Inc. | Environment controlled WIP cart |
| TW473792B (en) * | 2000-01-20 | 2002-01-21 | Ngk Insulators Ltd | Electrostatic chuck |
| ATE280436T1 (de) * | 2000-06-22 | 2004-11-15 | Unaxis Balzers Ag | Beschichtungsanlage für scheibenförmige werkstücke |
| US7094670B2 (en) * | 2000-08-11 | 2006-08-22 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| SG106588A1 (en) * | 2000-10-10 | 2004-10-29 | Inst Data Storage | Method for producing thin film magnetic devices having increased orientation ratio |
| JP2002134487A (ja) * | 2000-10-25 | 2002-05-10 | Hitachi Ltd | 半導体装置の製造方法 |
| JP3758979B2 (ja) * | 2001-02-27 | 2006-03-22 | 京セラ株式会社 | 静電チャック及び処理装置 |
| JP2002334921A (ja) * | 2001-05-10 | 2002-11-22 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
| US6510888B1 (en) * | 2001-08-01 | 2003-01-28 | Applied Materials, Inc. | Substrate support and method of fabricating the same |
| JP4040423B2 (ja) * | 2002-10-16 | 2008-01-30 | キヤノン株式会社 | 基板保持装置 |
| KR20040036984A (ko) | 2002-10-25 | 2004-05-04 | 엘지.필립스 엘시디 주식회사 | 플라즈마 에칭챔버의 아크발생 방지구조 |
| US20040221959A1 (en) * | 2003-05-09 | 2004-11-11 | Applied Materials, Inc. | Anodized substrate support |
| US8372205B2 (en) * | 2003-05-09 | 2013-02-12 | Applied Materials, Inc. | Reducing electrostatic charge by roughening the susceptor |
| JP2005018992A (ja) | 2003-06-23 | 2005-01-20 | Ibiden Co Ltd | プラズマ発生装置用電極埋設部材 |
| US7375946B2 (en) * | 2004-08-16 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for dechucking a substrate |
| US7429410B2 (en) * | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
| US8173228B2 (en) * | 2006-01-27 | 2012-05-08 | Applied Materials, Inc. | Particle reduction on surfaces of chemical vapor deposition processing apparatus |
| US20080131622A1 (en) * | 2006-12-01 | 2008-06-05 | White John M | Plasma reactor substrate mounting surface texturing |
-
2006
- 2006-12-01 US US11/566,113 patent/US20080131622A1/en not_active Abandoned
-
2007
- 2007-10-24 JP JP2007276150A patent/JP5578762B2/ja not_active Expired - Fee Related
- 2007-10-25 TW TW096140130A patent/TWI354349B/zh not_active IP Right Cessation
- 2007-10-25 KR KR1020070107664A patent/KR100939588B1/ko not_active Expired - Fee Related
- 2007-10-26 EP EP07021043A patent/EP1928017B1/en not_active Not-in-force
- 2007-10-26 DE DE602007006397T patent/DE602007006397D1/de active Active
- 2007-10-26 CN CN2007101653541A patent/CN101191203B/zh not_active Expired - Fee Related
-
2009
- 2009-11-30 US US12/628,016 patent/US20100144160A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080050304A (ko) | 2008-06-05 |
| CN101191203B (zh) | 2010-12-01 |
| EP1928017A1 (en) | 2008-06-04 |
| DE602007006397D1 (de) | 2010-06-24 |
| EP1928017B1 (en) | 2010-05-12 |
| JP2008138283A (ja) | 2008-06-19 |
| KR100939588B1 (ko) | 2010-02-01 |
| US20100144160A1 (en) | 2010-06-10 |
| TW200828493A (en) | 2008-07-01 |
| CN101191203A (zh) | 2008-06-04 |
| US20080131622A1 (en) | 2008-06-05 |
| JP5578762B2 (ja) | 2014-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |