CN111863665B - 一种硅片加热装置 - Google Patents
一种硅片加热装置 Download PDFInfo
- Publication number
- CN111863665B CN111863665B CN202010756126.7A CN202010756126A CN111863665B CN 111863665 B CN111863665 B CN 111863665B CN 202010756126 A CN202010756126 A CN 202010756126A CN 111863665 B CN111863665 B CN 111863665B
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- groove
- heating
- heating plate
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 147
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 147
- 239000010703 silicon Substances 0.000 title claims abstract description 147
- 238000010438 heat treatment Methods 0.000 title claims abstract description 126
- 239000002184 metal Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000000112 cooling gas Substances 0.000 claims description 33
- 230000017525 heat dissipation Effects 0.000 claims description 12
- 239000011229 interlayer Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 11
- 238000012360 testing method Methods 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 125
- 238000000034 method Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- KHXKESCWFMPTFT-UHFFFAOYSA-N 1,1,1,2,2,3,3-heptafluoro-3-(1,2,2-trifluoroethenoxy)propane Chemical compound FC(F)=C(F)OC(F)(F)C(F)(F)C(F)(F)F KHXKESCWFMPTFT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010756126.7A CN111863665B (zh) | 2020-07-31 | 2020-07-31 | 一种硅片加热装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010756126.7A CN111863665B (zh) | 2020-07-31 | 2020-07-31 | 一种硅片加热装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111863665A CN111863665A (zh) | 2020-10-30 |
CN111863665B true CN111863665B (zh) | 2024-03-15 |
Family
ID=72945857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010756126.7A Active CN111863665B (zh) | 2020-07-31 | 2020-07-31 | 一种硅片加热装置 |
Country Status (1)
Country | Link |
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CN (1) | CN111863665B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112485090A (zh) * | 2020-12-03 | 2021-03-12 | 西安奕斯伟硅片技术有限公司 | 一种硅片含铜量的测试方法 |
CN112683988B (zh) * | 2020-12-28 | 2023-06-02 | 上海新昇半导体科技有限公司 | 一种晶圆中金属杂质的检测方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090068585A (ko) * | 2007-12-24 | 2009-06-29 | 삼성전기주식회사 | 화학기상증착용 서셉터 |
CN101764049A (zh) * | 2008-12-24 | 2010-06-30 | 株式会社日立国际电气 | 基板处理装置 |
JP2010232315A (ja) * | 2009-03-26 | 2010-10-14 | Panasonic Corp | プラズマ処理装置 |
JP2011018772A (ja) * | 2009-07-09 | 2011-01-27 | Nippon Steel Corp | 炭化珪素単結晶成膜装置用サセプタ |
JP2011044732A (ja) * | 2009-04-13 | 2011-03-03 | Panasonic Corp | プラズマ処理装置及びプラズマ処理方法 |
CN105097621A (zh) * | 2014-05-04 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种基片承载装置及基片处理设备 |
CN204834574U (zh) * | 2015-07-09 | 2015-12-02 | 钧石(中国)能源有限公司 | 一种制备hit太阳能电池的载板和加热装置 |
CN105895566A (zh) * | 2015-01-26 | 2016-08-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 托盘、承载装置及半导体加工设备 |
-
2020
- 2020-07-31 CN CN202010756126.7A patent/CN111863665B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090068585A (ko) * | 2007-12-24 | 2009-06-29 | 삼성전기주식회사 | 화학기상증착용 서셉터 |
CN101764049A (zh) * | 2008-12-24 | 2010-06-30 | 株式会社日立国际电气 | 基板处理装置 |
JP2010232315A (ja) * | 2009-03-26 | 2010-10-14 | Panasonic Corp | プラズマ処理装置 |
JP2011044732A (ja) * | 2009-04-13 | 2011-03-03 | Panasonic Corp | プラズマ処理装置及びプラズマ処理方法 |
JP2011018772A (ja) * | 2009-07-09 | 2011-01-27 | Nippon Steel Corp | 炭化珪素単結晶成膜装置用サセプタ |
CN105097621A (zh) * | 2014-05-04 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种基片承载装置及基片处理设备 |
CN105895566A (zh) * | 2015-01-26 | 2016-08-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 托盘、承载装置及半导体加工设备 |
CN204834574U (zh) * | 2015-07-09 | 2015-12-02 | 钧石(中国)能源有限公司 | 一种制备hit太阳能电池的载板和加热装置 |
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Publication number | Publication date |
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CN111863665A (zh) | 2020-10-30 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20211027 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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CB02 | Change of applicant information |
Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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