JP2010118539A - 不揮発性半導体記憶装置 - Google Patents
不揮発性半導体記憶装置 Download PDFInfo
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
【解決手段】 半導体基板101上に複数の不揮発性メモリセルを配置して構成される不揮発性半導体記憶装置であって、メモリセルは、基板101の表面部に離間して設けられたソース・ドレイン領域120と、ソース・ドレイン領域120の直下の基板101内に設けられ、基板101よりも誘電率が低い埋め込み絶縁膜151と、ソース・ドレイン領域120の間に形成されるチャネル領域上に設けられた第1ゲート絶縁膜102と、第1ゲート絶縁膜102上に設けられた電荷蓄積層103と、電荷蓄積層103上に設けられた第2ゲート絶縁膜104と、第2ゲート絶縁膜104上に設けられた制御ゲート電極105とを備えた。
【選択図】 図1
Description
図1は、本発明の第1の実施形態に係わる不揮発性半導体記憶装置のメモリセルの概略構造を説明するためのもので、図1(a)はチャネル長方向に沿う断面図、図1(b)はチャネル幅方向に沿う断面図である。これらの図において、チャネル長方向とは、ビット線が延びるカラム方向のことであり、チャネル幅方向とは、ワード線(コントロールゲート電極)が延びるロウ方向のことである。
図15は、本発明の第2の実施形態に係わる不揮発性半導体記憶装置のメモリセルの概略構造を説明するためのもので、図15(a)はチャネル長方向に沿う断面図、図15(b)はチャネル幅方向に沿う断面図である。なお、図1(a)(b)と同一部分には同一符号を付して、その詳しい説明は省略する。
本実施形態は、第1の実施形態で形成したメモリセルを複数個、直列に接続し、その両端に選択ゲートとして機能するトランジスタを接続することによってNAND型のメモリセル・ユニットを構成した例である。なお、個々のセル・トランジスタはMONOS型、浮遊ゲート型のいずれでも構わない。
第1〜第3の実施形態に関し、以下に補足説明を加える。
なお、本発明は上述した各実施形態に限定されるものではなく。
102…第1ゲート絶縁膜(トンネル絶縁膜…シリコン酸窒化膜)
103…電荷蓄積層(シリコン窒化膜)
104…第2ゲート絶縁膜(ブロック絶縁膜…アルミナ)
105…制御ゲート電極(窒化タンタル、バリアメタル、低抵抗金属膜の積層で構成)
120…ソース・ドレイン領域(n+ 拡散層)
121…素子分離絶縁層(埋め込みシリコン酸化膜)
131…マスク材
132…マスク材(シリコン窒化膜)
140…溝
141a…スリット
141b…素子分離トレンチ
151…ソース・ドレイン領域直下の埋め込み酸化膜
203…浮遊ゲート電極(リン・ドープのシリコン膜)
204…アルミナ(IPD)
301…選択ゲート
Claims (9)
- 半導体基板上に複数の不揮発性メモリセルを配置して構成される不揮発性半導体記憶装置であって、前記メモリセルは、
前記基板の表面部に離間して設けられたソース・ドレイン領域と、
前記ソース・ドレイン領域の直下の前記基板内に設けられ、前記基板よりも誘電率が低い埋め込み絶縁膜と、
前記ソース・ドレイン領域の間に形成されるチャネル領域上に設けられた第1ゲート絶縁膜と、
前記第1ゲート絶縁膜上に設けられた電荷蓄積層と、
前記電荷蓄積層上に設けられた第2ゲート絶縁膜と、
前記第2ゲート絶縁膜上に設けられた制御ゲート電極と、
を具備したことを特徴とする不揮発性半導体記憶装置。 - 前記埋め込み絶縁膜の厚さは、前記ソース・ドレイン領域の厚さよりも大きく、且つ隣接するメモリセル間を分離するための素子分離絶縁膜の深さよりも小さいことを特徴とする請求項1に記載の不揮発性半導体記憶装置。
- 前記ソース・ドレイン領域の厚さは、1.5nm以上であり、且つ前記メモリセルのチャネル長の1.1倍以下であることを特徴とする請求項2に記載の不揮発性半導体記憶装置。
- 前記チャネル領域におけるチャネル・ドーパント不純物の最大深さは、前記埋め込み絶縁膜の上端よりも深く、且つ隣接するメモリセル間を分離するための素子分離絶縁膜の深さよりも浅いことを特徴とする請求項1乃至3の何れかに記載の不揮発性半導体記憶装置。
- 前記チャネル領域の空乏層の深さは、前記埋め込み絶縁膜の上端よりも深く、且つ隣接するメモリセル間を分離するための素子分離絶縁膜の深さよりも浅いことを特徴とする請求項1乃至4の何れかに記載の不揮発性半導体記憶装置。
- 前記第2ゲート絶縁膜は、前記メモリセルのチャネル幅方向に延長して設けられ、前記チャネル幅方向に隣接するメモリセル間で連続していることを特徴とする請求項1乃至5の何れかに記載の不揮発性半導体記憶装置。
- 前記メモリセルが複数個直列に接続され、この直列接続部の両端に選択ゲート・トランジスタを接続したNAND型メモリセル・ユニットを有することを特徴とする請求項1乃至6の何れかに記載の不揮発性半導体記憶装置。
- 前記ソース・ドレイン領域の導電型は、前記半導体基板の導電型と異なることを特徴とする請求項1乃至7の何れかに記載の不揮発性半導体記憶装置。
- 前記メモリセルのソース・ドレイン領域の導電型は、前記基板の導電型と同じであることを特徴とする請求項7に記載の不揮発性半導体記憶装置。
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