JP2010109375A5 - - Google Patents

Download PDF

Info

Publication number
JP2010109375A5
JP2010109375A5 JP2009276412A JP2009276412A JP2010109375A5 JP 2010109375 A5 JP2010109375 A5 JP 2010109375A5 JP 2009276412 A JP2009276412 A JP 2009276412A JP 2009276412 A JP2009276412 A JP 2009276412A JP 2010109375 A5 JP2010109375 A5 JP 2010109375A5
Authority
JP
Japan
Prior art keywords
substrate
radiation beam
laser annealing
preheating
incident
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009276412A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010109375A (ja
JP5094825B2 (ja
Filing date
Publication date
Priority claimed from US10/762,861 external-priority patent/US7098155B2/en
Application filed filed Critical
Publication of JP2010109375A publication Critical patent/JP2010109375A/ja
Publication of JP2010109375A5 publication Critical patent/JP2010109375A5/ja
Application granted granted Critical
Publication of JP5094825B2 publication Critical patent/JP5094825B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2009276412A 2004-01-22 2009-12-04 低濃度ドープされたシリコン基板のレーザ熱アニール Expired - Fee Related JP5094825B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/762,861 US7098155B2 (en) 2003-09-29 2004-01-22 Laser thermal annealing of lightly doped silicon substrates
US10/762,861 2004-01-22

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2005013255A Division JP4843225B2 (ja) 2004-01-22 2005-01-20 低濃度ドープされたシリコン基板のレーザ熱アニール

Publications (3)

Publication Number Publication Date
JP2010109375A JP2010109375A (ja) 2010-05-13
JP2010109375A5 true JP2010109375A5 (https=) 2012-03-29
JP5094825B2 JP5094825B2 (ja) 2012-12-12

Family

ID=34911265

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2005013255A Expired - Fee Related JP4843225B2 (ja) 2004-01-22 2005-01-20 低濃度ドープされたシリコン基板のレーザ熱アニール
JP2009276412A Expired - Fee Related JP5094825B2 (ja) 2004-01-22 2009-12-04 低濃度ドープされたシリコン基板のレーザ熱アニール

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2005013255A Expired - Fee Related JP4843225B2 (ja) 2004-01-22 2005-01-20 低濃度ドープされたシリコン基板のレーザ熱アニール

Country Status (3)

Country Link
JP (2) JP4843225B2 (https=)
KR (1) KR100699211B1 (https=)
TW (1) TWI297521B (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5073260B2 (ja) * 2006-09-29 2012-11-14 日立コンピュータ機器株式会社 レーザアニール装置及びレーザアニール方法
US20080206897A1 (en) * 2007-02-27 2008-08-28 Woo Sik Yoo Selective Depth Optical Processing
US20090114630A1 (en) * 2007-11-05 2009-05-07 Hawryluk Andrew M Minimization of surface reflectivity variations
JP5611212B2 (ja) * 2008-09-17 2014-10-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板のアニールにおける熱量の管理
US20100068898A1 (en) 2008-09-17 2010-03-18 Stephen Moffatt Managing thermal budget in annealing of substrates
US20100084744A1 (en) * 2008-10-06 2010-04-08 Zafiropoulo Arthur W Thermal processing of substrates with pre- and post-spike temperature control
JP5541693B2 (ja) * 2010-03-25 2014-07-09 株式会社日本製鋼所 レーザアニール装置
JP5614768B2 (ja) * 2010-03-25 2014-10-29 株式会社日本製鋼所 レーザ処理装置およびレーザ処理方法
US8014427B1 (en) * 2010-05-11 2011-09-06 Ultratech, Inc. Line imaging systems and methods for laser annealing
JP5617421B2 (ja) * 2010-08-06 2014-11-05 Ｊｆｅスチール株式会社 電子ビーム照射装置
US8026519B1 (en) * 2010-10-22 2011-09-27 Ultratech, Inc. Systems and methods for forming a time-averaged line image
JP5786557B2 (ja) * 2011-08-25 2015-09-30 株式会社Sumco シミュレーションによるレーザースパイクアニールを施す際に生じる酸素析出物からの発生転位予測方法
US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
SG10201503478UA (en) * 2012-06-11 2015-06-29 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
US9823121B2 (en) * 2014-10-14 2017-11-21 Kla-Tencor Corporation Method and system for measuring radiation and temperature exposure of wafers along a fabrication process line
JP6452564B2 (ja) * 2015-07-15 2019-01-16 住友重機械工業株式会社 レーザアニール装置及びレーザアニール方法
SG10201605683WA (en) * 2015-07-22 2017-02-27 Ultratech Inc High-efficiency line-forming optical systems and methods using a serrated spatial filter
EP3329510B1 (en) * 2015-07-29 2022-04-13 Applied Materials, Inc. Rotating substrate laser anneal
KR102772310B1 (ko) * 2019-09-09 2025-02-26 삼성디스플레이 주식회사 레이저 열처리 장치 및 레이저 빔 모니터링 시스템
JP2023536376A (ja) * 2021-07-06 2023-08-25 エーピーエス リサーチ コーポレーション レーザー熱処理装置及びレーザー熱処理方法
KR102753522B1 (ko) * 2021-12-02 2025-01-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629323A (en) * 1979-08-17 1981-03-24 Nec Corp Two-wavelength laser surface treating apparatus
JPS57104217A (en) * 1980-12-22 1982-06-29 Toshiba Corp Surface heat treatment
JPS57183024A (en) * 1981-05-02 1982-11-11 Fujitsu Ltd Laser annealing
JPS57183023A (en) * 1981-05-02 1982-11-11 Fujitsu Ltd Laser annealing
JPS57111020A (en) * 1981-11-16 1982-07-10 Hitachi Ltd Manufacture of semiconductor device
JPS60117617A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法
JPH01173707A (ja) * 1987-12-28 1989-07-10 Matsushita Electric Ind Co Ltd レーザアニール方法
JPH03266424A (ja) * 1990-03-16 1991-11-27 Sony Corp 半導体基板のアニール方法
JPH0521340A (ja) * 1991-07-10 1993-01-29 Ricoh Co Ltd 薄膜半導体装置、その製法および製造装置
JPH0883765A (ja) * 1994-07-14 1996-03-26 Sanyo Electric Co Ltd 多結晶半導体膜の製造方法
JP2000012461A (ja) * 1998-06-17 2000-01-14 Matsushita Electric Ind Co Ltd 結晶質半導体薄膜の作製方法
JP2000012484A (ja) * 1998-06-25 2000-01-14 Mitsubishi Electric Corp レーザアニール装置
JP3185881B2 (ja) * 1998-10-28 2001-07-11 日本電気株式会社 レーザ照射装置およびレーザ照射方法
JP2001156017A (ja) * 1999-11-29 2001-06-08 Semiconductor Energy Lab Co Ltd レーザー装置及びレーザー光を用いた熱処理方法並びに半導体装置の作製方法
US7015422B2 (en) * 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
JP2002217125A (ja) * 2001-01-23 2002-08-02 Sumitomo Heavy Ind Ltd 表面処理装置及び方法
JP2003347237A (ja) * 2002-05-30 2003-12-05 Mitsubishi Electric Corp 半導体装置の製造方法およびその製造装置
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法

Similar Documents

Publication Publication Date Title
JP2010109375A5 (https=)
JP5739477B2 (ja) 滞留時間が非常に短いレーザアニールシステムおよび方法
Snaider et al. Ultrafast imaging of carrier transport across grain boundaries in hybrid perovskite thin films
JP6054890B2 (ja) 被覆物を備えた基材を得る方法
TWI240980B (en) Method for monitoring in-situ crystallizing state and method and apparatus for annealing
WO2005043696A3 (en) Laser thermal annealing of lightly doped silicon substrates
WO2009126907A3 (en) Laser-scribing platform and hybrid writing strategy
EA022242B1 (ru) Способ получения подложки
JP2005210129A5 (https=)
TW201250854A (en) Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication
EA028967B1 (ru) Способ термической обработки покрытия
CN104215611B (zh) 用于检查多晶硅层的方法
JP2010274328A5 (https=)
CN103056521A (zh) 一种基于连续激光扫描的钛合金板材成形工艺
JP2009272440A (ja) 半導体ウェーハの製造方法
JP2010166035A5 (https=)
WO2014010599A1 (ja) 積層板の製造方法
Nigo et al. Reflectance and crystallinity of silicon solar cells with LIPSS produced by XeCl excimer laser pulses
JP6646590B2 (ja) 酸化ニッケル層上に結晶化した銀製の機能層を含む材料
Su et al. Direct and stand-off fabrication of black silicon with enhanced absorbance in the short-wavelength infrared region using femtosecond laser filament
TWI312545B (en) Method of enhancing laser crystallization for poly-silicon fabrication
Chae et al. Selective chain alignment of conducting polymer blend films by an ultrafast laser
KR20180125291A (ko) Uv 및 청색광을 이용한 페로브스카이트 박막의 결정성 향상 방법
JP2010098003A (ja) レーザー結晶化法
Tsuchiya et al. Epitaxial growth of tin oxide films on (0 0 1) TiO2 substrates by KrF and XeCl excimer laser annealing