TWI297521B - Laser thermal annealing of lightly doped silicon substrates - Google Patents

Laser thermal annealing of lightly doped silicon substrates Download PDF

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Publication number
TWI297521B
TWI297521B TW094101533A TW94101533A TWI297521B TW I297521 B TWI297521 B TW I297521B TW 094101533 A TW094101533 A TW 094101533A TW 94101533 A TW94101533 A TW 94101533A TW I297521 B TWI297521 B TW I297521B
Authority
TW
Taiwan
Prior art keywords
substrate
radiation
preheating
annealed
preheated
Prior art date
Application number
TW094101533A
Other languages
English (en)
Chinese (zh)
Other versions
TW200529327A (en
Inventor
Somit Talwar
David A Markle
Original Assignee
Ultratech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/762,861 external-priority patent/US7098155B2/en
Application filed by Ultratech Inc filed Critical Ultratech Inc
Publication of TW200529327A publication Critical patent/TW200529327A/zh
Application granted granted Critical
Publication of TWI297521B publication Critical patent/TWI297521B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Recrystallisation Techniques (AREA)
TW094101533A 2004-01-22 2005-01-19 Laser thermal annealing of lightly doped silicon substrates TWI297521B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/762,861 US7098155B2 (en) 2003-09-29 2004-01-22 Laser thermal annealing of lightly doped silicon substrates

Publications (2)

Publication Number Publication Date
TW200529327A TW200529327A (en) 2005-09-01
TWI297521B true TWI297521B (en) 2008-06-01

Family

ID=34911265

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094101533A TWI297521B (en) 2004-01-22 2005-01-19 Laser thermal annealing of lightly doped silicon substrates

Country Status (3)

Country Link
JP (2) JP4843225B2 (https=)
KR (1) KR100699211B1 (https=)
TW (1) TWI297521B (https=)

Families Citing this family (21)

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Publication number Priority date Publication date Assignee Title
JP5073260B2 (ja) * 2006-09-29 2012-11-14 日立コンピュータ機器株式会社 レーザアニール装置及びレーザアニール方法
US20080206897A1 (en) * 2007-02-27 2008-08-28 Woo Sik Yoo Selective Depth Optical Processing
US20090114630A1 (en) * 2007-11-05 2009-05-07 Hawryluk Andrew M Minimization of surface reflectivity variations
JP5611212B2 (ja) * 2008-09-17 2014-10-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板のアニールにおける熱量の管理
US20100068898A1 (en) 2008-09-17 2010-03-18 Stephen Moffatt Managing thermal budget in annealing of substrates
US20100084744A1 (en) * 2008-10-06 2010-04-08 Zafiropoulo Arthur W Thermal processing of substrates with pre- and post-spike temperature control
JP5541693B2 (ja) * 2010-03-25 2014-07-09 株式会社日本製鋼所 レーザアニール装置
JP5614768B2 (ja) * 2010-03-25 2014-10-29 株式会社日本製鋼所 レーザ処理装置およびレーザ処理方法
US8014427B1 (en) * 2010-05-11 2011-09-06 Ultratech, Inc. Line imaging systems and methods for laser annealing
JP5617421B2 (ja) * 2010-08-06 2014-11-05 Ｊｆｅスチール株式会社 電子ビーム照射装置
US8026519B1 (en) * 2010-10-22 2011-09-27 Ultratech, Inc. Systems and methods for forming a time-averaged line image
JP5786557B2 (ja) * 2011-08-25 2015-09-30 株式会社Sumco シミュレーションによるレーザースパイクアニールを施す際に生じる酸素析出物からの発生転位予測方法
US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
SG10201503478UA (en) * 2012-06-11 2015-06-29 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
US9823121B2 (en) * 2014-10-14 2017-11-21 Kla-Tencor Corporation Method and system for measuring radiation and temperature exposure of wafers along a fabrication process line
JP6452564B2 (ja) * 2015-07-15 2019-01-16 住友重機械工業株式会社 レーザアニール装置及びレーザアニール方法
SG10201605683WA (en) * 2015-07-22 2017-02-27 Ultratech Inc High-efficiency line-forming optical systems and methods using a serrated spatial filter
EP3329510B1 (en) * 2015-07-29 2022-04-13 Applied Materials, Inc. Rotating substrate laser anneal
KR102772310B1 (ko) * 2019-09-09 2025-02-26 삼성디스플레이 주식회사 레이저 열처리 장치 및 레이저 빔 모니터링 시스템
JP2023536376A (ja) * 2021-07-06 2023-08-25 エーピーエス リサーチ コーポレーション レーザー熱処理装置及びレーザー熱処理方法
KR102753522B1 (ko) * 2021-12-02 2025-01-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

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Also Published As

Publication number Publication date
KR20050076768A (ko) 2005-07-27
JP2010109375A (ja) 2010-05-13
JP2005210129A (ja) 2005-08-04
JP4843225B2 (ja) 2011-12-21
JP5094825B2 (ja) 2012-12-12
TW200529327A (en) 2005-09-01
KR100699211B1 (ko) 2007-03-27

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