JP2010103503A5 - - Google Patents

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Publication number
JP2010103503A5
JP2010103503A5 JP2009215490A JP2009215490A JP2010103503A5 JP 2010103503 A5 JP2010103503 A5 JP 2010103503A5 JP 2009215490 A JP2009215490 A JP 2009215490A JP 2009215490 A JP2009215490 A JP 2009215490A JP 2010103503 A5 JP2010103503 A5 JP 2010103503A5
Authority
JP
Japan
Prior art keywords
diodes
electrically connected
resistor
transistor
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009215490A
Other languages
English (en)
Japanese (ja)
Other versions
JP5530138B2 (ja
JP2010103503A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009215490A priority Critical patent/JP5530138B2/ja
Priority claimed from JP2009215490A external-priority patent/JP5530138B2/ja
Publication of JP2010103503A publication Critical patent/JP2010103503A/ja
Publication of JP2010103503A5 publication Critical patent/JP2010103503A5/ja
Application granted granted Critical
Publication of JP5530138B2 publication Critical patent/JP5530138B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009215490A 2008-09-29 2009-09-17 半導体装置 Expired - Fee Related JP5530138B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009215490A JP5530138B2 (ja) 2008-09-29 2009-09-17 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008251131 2008-09-29
JP2008251131 2008-09-29
JP2009215490A JP5530138B2 (ja) 2008-09-29 2009-09-17 半導体装置

Publications (3)

Publication Number Publication Date
JP2010103503A JP2010103503A (ja) 2010-05-06
JP2010103503A5 true JP2010103503A5 (enExample) 2012-10-25
JP5530138B2 JP5530138B2 (ja) 2014-06-25

Family

ID=42056323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009215490A Expired - Fee Related JP5530138B2 (ja) 2008-09-29 2009-09-17 半導体装置

Country Status (6)

Country Link
US (1) US8123137B2 (enExample)
JP (1) JP5530138B2 (enExample)
KR (1) KR101563904B1 (enExample)
CN (1) CN102165579B (enExample)
TW (1) TWI474439B (enExample)
WO (1) WO2010035626A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010044341A1 (en) * 2008-10-16 2010-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9362820B2 (en) 2010-10-07 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. DCDC converter, semiconductor device, and power generation device
ITMI20120310A1 (it) 2012-02-29 2013-08-30 St Microelectronics Srl Regolatore di tensione per dispositivi elettronici contact-less
WO2014013571A1 (ja) * 2012-07-18 2014-01-23 トヨタ自動車株式会社 半導体装置の検査装置、検査システム、検査方法、及び、検査済半導体装置の生産方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62237592A (ja) * 1986-04-08 1987-10-17 Casio Comput Co Ltd Ｉｃカ−ドにおけるクロツク切換方式
JPS63142845A (ja) * 1986-12-05 1988-06-15 Nec Corp 電源電圧検出回路
JPS63150713A (ja) * 1986-12-16 1988-06-23 Toshiba Corp 定電圧源回路
EP0316157B1 (en) * 1987-11-12 1994-07-20 Kabushiki Kaisha Toshiba An electrically powered portable medium
JPH01123269U (enExample) * 1988-02-16 1989-08-22
KR0172346B1 (ko) * 1995-12-20 1999-03-30 김광호 반도체 장치의 전압클램프회로
JPH10160768A (ja) * 1996-12-04 1998-06-19 Fujitsu Ltd 電圧レベル検出装置
JPH1166248A (ja) 1997-08-12 1999-03-09 Mitsubishi Electric Corp 非接触型ｉｃカード
JP3449300B2 (ja) * 1999-07-06 2003-09-22 横河電機株式会社 基板上に形成された回路のトリミング方法
JP3824451B2 (ja) * 1999-07-29 2006-09-20 富士通株式会社 非接触ｉｃカードの有無検出回路
JP4202742B2 (ja) 2002-12-25 2008-12-24 株式会社東芝 非接触式ｉｃカード
JP4348961B2 (ja) * 2003-02-12 2009-10-21 株式会社デンソー 誘導性負荷駆動用ｉｃ
JP2005339466A (ja) 2004-05-31 2005-12-08 Sharp Corp 非接触ｉｃカード
CN100466443C (zh) * 2004-06-17 2009-03-04 株式会社东芝 整流器电路和无线电通信装置
US7923796B2 (en) 2005-05-27 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including resonance circuit
JP2007005778A (ja) 2005-05-27 2007-01-11 Semiconductor Energy Lab Co Ltd 半導体装置
KR101349880B1 (ko) * 2006-10-02 2014-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP5038080B2 (ja) * 2006-10-02 2012-10-03 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP5412034B2 (ja) * 2006-12-26 2014-02-12 株式会社半導体エネルギー研究所 半導体装置
JP5324161B2 (ja) * 2007-08-30 2013-10-23 株式会社半導体エネルギー研究所 半導体装置

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