JP2010080981A - 半導体装置、電子書籍、電子機器、及び半導体装置の作製方法 - Google Patents
半導体装置、電子書籍、電子機器、及び半導体装置の作製方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 153
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 60
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910052796 boron Inorganic materials 0.000 claims abstract description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 61
- 230000015572 biosynthetic process Effects 0.000 claims description 28
- 239000012298 atmosphere Substances 0.000 claims description 23
- 238000004458 analytical method Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 abstract description 40
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 358
- 239000010410 layer Substances 0.000 description 45
- 229910021417 amorphous silicon Inorganic materials 0.000 description 28
- 238000010438 heat treatment Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 20
- 238000002425 crystallisation Methods 0.000 description 16
- 230000008025 crystallization Effects 0.000 description 16
- 230000008569 process Effects 0.000 description 15
- 230000003197 catalytic effect Effects 0.000 description 14
- 238000009826 distribution Methods 0.000 description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 12
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 230000008859 change Effects 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 7
- 238000005499 laser crystallization Methods 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 238000009751 slip forming Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000005247 gettering Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- -1 moisture Chemical compound 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000010407 anodic oxide Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000003405 preventing effect Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- KPSZQYZCNSCYGG-UHFFFAOYSA-N [B].[B] Chemical compound [B].[B] KPSZQYZCNSCYGG-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
Abstract
【解決手段】上記目的を解決するため、ガラス基板上に200nm〜500nmの膜厚の第1の窒化珪素膜と、前記第1の窒化珪素膜上に第2の窒化珪素膜と、前記第2の窒化珪素膜上にチャネル形成領域となる領域を含む非晶質半導体膜と、を有する構成において、前記第1の絶縁膜と前記第2の絶縁膜との界面において、ボロンを有する。
【選択図】図1
Description
を成膜する。次に、このアモルファスシリコン膜を加熱、またはレーザー光の照射等の結晶化処理を施してポリシリコン膜(多結晶珪素膜)を形成する。次いで、このポリシリコン膜を所望の形状にパターニングした後、その上に絶縁膜(ゲート絶縁層)と導電膜(ゲート配線形成材料層)を堆積し、これらをパターニングしてゲート配線を形成する。次いで、P型またはN型の導電性を付与する不純物をポリシリコン膜に選択的に導入してソース領域、ドレイン領域となる不純物領域を形成する。続いて、層間絶縁膜を堆積し、ソース領域、ドレイン領域上を露出させるコンタクトホールを形成した後、金属膜を形成し、これをパターニングしてソース領域、ドレイン領域と接触する金属配線を形成する。こうして、TFTの作製工程を完了する。
この様な構成により活性層、特にチャネル形成領域を構成する領域と第2の下地膜との界面の汚染を防ぎ、安定且つ良好な電気特性を実現する。
また、リンイオン、ボロンイオンが注入されなかった領域が後にキャリアの移動経路となる真性または実質的に真性なチャネル形成領域114となる。
B)下地膜を形成した後、a-Si膜を成膜したTFT(従来例2)
C)下地膜を形成し熱処理を行なった後、a-Si膜を成膜したTFT(従来例3)
D)第1の下地膜を形成し熱処理を行なった後、第2の下地膜(5nm)とa-Si膜を連続形成したTFTE)第1の下地膜を形成し熱処理を行なった後、第2の下地膜(10nm)とa-Si膜を連続形成したTFTF)第1の下地膜を形成し熱処理を行なった後、第2の下地膜(20nm)とa-Si膜を連続形成したTFT(本実施例)
G)第1の下地膜を形成し熱処理を行なった後、第2の下地膜(50nm)とa-Si膜を連続形成したTFTH)第1の下地膜を形成し熱処理を行なった後、第2の下地膜(100nm)とa-Si膜を連続形成したTFT
ゲート配線106は陽極酸化膜109で保護されている。その上を覆う第1の層間絶縁膜115にコンタクトホールを形成して高濃度不純物領域に配線116、117が接続されている。
そして、高濃度不純物領域(n+ 型領域)110、111には配線116、117が接続され、その上に第2の層間絶縁膜118と、ブラックマスク119とが形成される。さらに、その上に第3の層間絶縁膜120が形成され、ITO、SnO2 等の透明導電膜からなる画素電極121が接続される。この画素電極は画素TFTを覆い、且つブラックマスクと補助容量を形成している。本実施例では一例として透過型のLCDを作製したが特に限定されない。例えば、画素電極の材料として反射性を有する金属材料を用い、画素電極のパターニングの変更、または幾つかの工程の追加/削除を適宜行えば反射型のLCDを作製することが可能である。
)までは、実施例1と同一である。
そして照射面全体を所望のレーザーエネルギー密度でアニールするためには、トータルエネルギーが5J以上、好ましくは10J以上の出力のレーザー装置を用いる。
、520はロジック回路である。ロジック回路520としては、D/Aコンバータ、γ補正回路、信号分割回路などの従来ICで代用していた様な処理を行う回路を形成することができる。勿論、基板上にICチップを設けて、ICチップ上で信号処理を行うことも可能である。
101a 第1の下地膜
101a’ 熱処理された第1の下地膜
101b 第2の下地膜
102 半導体膜
102’ 結晶質半導体膜
103 活性層
104 絶縁膜
105 導電膜
106 ゲート絶縁層
107、107’ ゲート配線
108 マスク
109 陽極酸化膜
110、111 n+ 領域(ソース領域、ドレイン領域)
112、113 n- 領域(低濃度不純物領域)
114 チャネル形成領域
115 層間絶縁膜
116、117 配線
Claims (10)
- ガラス基板上に200℃〜700℃の温度で処理された、200nm〜500nmの膜厚の第1の窒化珪素膜と、
前記第1の窒化珪素膜上に10nm〜200nmの膜厚の第2の窒化珪素膜と、
前記第2の窒化珪素膜上にチャネル形成領域となる領域を含む非晶質半導体膜と、を有し、
前記第1の窒化珪素膜と前記第2の窒化珪素膜との界面において、ボロンを有することを特徴とする半導体装置。 - ガラス基板上に200℃〜700℃の温度で処理された、200nm〜500nmの膜厚の第1の窒化珪素膜と、
前記第1の窒化珪素膜上に10nm〜200nmの膜厚の第2の窒化珪素膜と、
前記第2の窒化珪素膜上にチャネル形成領域となる領域を含む非晶質半導体膜と、を有し、
前記第1の窒化珪素膜と前記第2の窒化珪素膜との界面におけるボロンの濃度は、前記第2の窒化珪素膜と前記非晶質半導体膜との界面におけるボロンの濃度と比較して高いことを特徴とする半導体装置。 - ガラス基板上に200nm〜500nmの膜厚の第1の窒化珪素膜と、
前記第1の窒化珪素膜上に第2の窒化珪素膜と、
前記第2の窒化珪素膜上にチャネル形成領域となる領域を含む非晶質半導体膜と、を有し、
前記第1の窒化珪素膜と前記第2の窒化珪素膜との界面において、ボロンを有することを特徴とする半導体装置。 - ガラス基板上に200nm〜500nmの膜厚の第1の窒化珪素膜と、
前記第1の窒化珪素膜上に第2の窒化珪素膜と、
前記第2の窒化珪素膜上にチャネル形成領域となる領域を含む非晶質半導体膜と、を有し、
前記第1の窒化珪素膜と前記第2の窒化珪素膜との界面におけるボロンの濃度は、前記第2の窒化珪素膜と前記非晶質半導体膜との界面におけるボロンの濃度と比較して高いことを特徴とする半導体装置。 - 請求項2または4において、
前記第1の窒化珪素膜と前記第2の窒化珪素膜との界面において、SIMS分析により、前記ボロンの濃度は、ピークの最高値が3×1017atoms/cm3以上であることを特徴とする半導体装置。 - 請求項1乃至5のいずれか一に記載の半導体装置を有する電子書籍。
- 請求項1乃至5のいずれか一に記載の半導体装置を表示部に組み込んだ電子機器。
- ガラス基板上に200℃〜700℃の温度で処理された、200nm〜500nmの膜厚の第1の窒化珪素膜を形成し、
前記第1の窒化珪素膜を大気にさらし、
第1の窒化珪素膜上に10nm〜200nmの膜厚の第2の窒化珪素膜とチャネル形成領域となる領域を含む非晶質半導体膜とを順次大気にふれさせることなく積層形成し、
前記第1の窒化珪素膜と前記第2の窒化珪素膜との界面において、ボロンを有することを特徴とする半導体装置の作製方法。 - ガラス基板上に200℃〜700℃の温度で処理された、200nm〜500nmの膜厚の第1の窒化珪素膜を形成し、
前記第1の窒化珪素膜を大気にさらし、
第1の窒化珪素膜上に10nm〜200nmの膜厚の第2の窒化珪素膜とチャネル形成領域となる領域を含む非晶質半導体膜とを順次大気にふれさせることなく積層形成し、
前記第1の窒化珪素膜と前記第2の窒化珪素膜との界面におけるボロンの濃度は、前記第2の窒化珪素膜と前記非晶質半導体膜との界面におけるボロンの濃度と比較して高いことを特徴とする半導体装置の作製方法。 - 請求項8または9において、
前記第1の窒化珪素膜と前記第2の窒化珪素膜との界面において、SIMS分析により、前記ボロンの濃度は、ピークの最高値が3×1017atoms/cm3以上であることを特徴とする半導体装置の作製方法。
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EP0993032A2 (en) | 2000-04-12 |
JP4667523B2 (ja) | 2011-04-13 |
JP4602476B2 (ja) | 2010-12-22 |
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