JP2010080943A5 - - Google Patents
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- Publication number
- JP2010080943A5 JP2010080943A5 JP2009194370A JP2009194370A JP2010080943A5 JP 2010080943 A5 JP2010080943 A5 JP 2010080943A5 JP 2009194370 A JP2009194370 A JP 2009194370A JP 2009194370 A JP2009194370 A JP 2009194370A JP 2010080943 A5 JP2010080943 A5 JP 2010080943A5
- Authority
- JP
- Japan
- Prior art keywords
- ion
- insulating film
- defect portion
- manufacturing
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 15
- 150000002500 ions Chemical class 0.000 claims 14
- 230000007547 defect Effects 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 7
- 230000001133 acceleration Effects 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 5
- 239000004020 conductor Substances 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 239000004642 Polyimide Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 239000011572 manganese Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229920001721 polyimide Polymers 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 239000004593 Epoxy Substances 0.000 claims 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- 239000004952 Polyamide Substances 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 150000001408 amides Chemical class 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 230000002950 deficient Effects 0.000 claims 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 229920001709 polysilazane Polymers 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009194370A JP2010080943A (ja) | 2008-08-27 | 2009-08-25 | 半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008217613 | 2008-08-27 | ||
| JP2009194370A JP2010080943A (ja) | 2008-08-27 | 2009-08-25 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010080943A JP2010080943A (ja) | 2010-04-08 |
| JP2010080943A5 true JP2010080943A5 (enExample) | 2012-09-13 |
Family
ID=41726080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009194370A Withdrawn JP2010080943A (ja) | 2008-08-27 | 2009-08-25 | 半導体装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US8222097B2 (enExample) |
| JP (1) | JP2010080943A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8610155B2 (en) * | 2008-11-18 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and cellular phone |
| US8576209B2 (en) | 2009-07-07 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| DE102011012722B4 (de) | 2010-03-31 | 2019-09-12 | Mazda Motor Corp. | Verfahren zur Detektion anomaler Verbrennung für einen Fremdzündungsmotor und Fremdzündungsmotor |
| JP5960000B2 (ja) * | 2012-09-05 | 2016-08-02 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| TWI625847B (zh) * | 2016-09-09 | 2018-06-01 | 友達光電股份有限公司 | 畫素結構及其製作方法 |
| US12112982B2 (en) * | 2018-11-14 | 2024-10-08 | Northwestern University | Nanoscale resolution, spatially-controlled conductivity modulation of dielectric materials using a focused ion beam |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4843034A (en) * | 1987-06-12 | 1989-06-27 | Massachusetts Institute Of Technology | Fabrication of interlayer conductive paths in integrated circuits |
| US5354695A (en) | 1992-04-08 | 1994-10-11 | Leedy Glenn J | Membrane dielectric isolation IC fabrication |
| US5985693A (en) | 1994-09-30 | 1999-11-16 | Elm Technology Corporation | High density three-dimensional IC interconnection |
| JPH06318559A (ja) * | 1993-05-07 | 1994-11-15 | Hitachi Ltd | 高エネルギーイオン注入による半導体装置の製造方法 |
| WO1995025341A1 (en) | 1994-03-15 | 1995-09-21 | Irvine Sensors Corporation | 3d stack of ic chips having leads reached by vias through passivation covering access plane |
| JPH08222631A (ja) | 1995-02-13 | 1996-08-30 | Sony Corp | 多層配線形成方法 |
| JPH11163129A (ja) | 1997-11-28 | 1999-06-18 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| US6271542B1 (en) | 1997-12-08 | 2001-08-07 | International Business Machines Corporation | Merged logic and memory combining thin film and bulk Si transistors |
| JP2002151816A (ja) | 2000-11-10 | 2002-05-24 | Ibiden Co Ltd | 表裏間導電箇所を有する絶縁膜およびその製造方法 |
| TW513791B (en) | 2001-09-26 | 2002-12-11 | Orient Semiconductor Elect Ltd | Modularized 3D stacked IC package |
| US6717222B2 (en) | 2001-10-07 | 2004-04-06 | Guobiao Zhang | Three-dimensional memory |
| TW519310U (en) | 2001-12-18 | 2003-01-21 | Via Tech Inc | Electric connection apparatus |
| US6762076B2 (en) | 2002-02-20 | 2004-07-13 | Intel Corporation | Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices |
| US6835974B2 (en) | 2002-03-14 | 2004-12-28 | Jeng-Jye Shau | Three dimensional integrated circuits using sub-micron thin-film diodes |
| JP4907063B2 (ja) * | 2004-05-25 | 2012-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7312487B2 (en) | 2004-08-16 | 2007-12-25 | International Business Machines Corporation | Three dimensional integrated circuit |
| US7262494B2 (en) | 2005-03-16 | 2007-08-28 | Freescale Semiconductor, Inc. | Three-dimensional package |
| US7485968B2 (en) | 2005-08-11 | 2009-02-03 | Ziptronix, Inc. | 3D IC method and device |
| US7626257B2 (en) | 2006-01-18 | 2009-12-01 | Infineon Technologies Ag | Semiconductor devices and methods of manufacture thereof |
| CN101743629B (zh) * | 2007-07-17 | 2012-06-13 | 夏普株式会社 | 具备薄膜晶体管的半导体装置及其制造方法 |
| US7943473B2 (en) | 2009-01-13 | 2011-05-17 | Maxim Integrated Products, Inc. | Minimum cost method for forming high density passive capacitors for replacement of discrete board capacitors using a minimum cost 3D wafer-to-wafer modular integration scheme |
| US9406561B2 (en) | 2009-04-20 | 2016-08-02 | International Business Machines Corporation | Three dimensional integrated circuit integration using dielectric bonding first and through via formation last |
-
2009
- 2009-08-25 JP JP2009194370A patent/JP2010080943A/ja not_active Withdrawn
- 2009-08-25 US US12/547,098 patent/US8222097B2/en not_active Expired - Fee Related
-
2012
- 2012-07-12 US US13/547,393 patent/US8530973B2/en active Active
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