JP2010536159A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010536159A5 JP2010536159A5 JP2009519684A JP2009519684A JP2010536159A5 JP 2010536159 A5 JP2010536159 A5 JP 2010536159A5 JP 2009519684 A JP2009519684 A JP 2009519684A JP 2009519684 A JP2009519684 A JP 2009519684A JP 2010536159 A5 JP2010536159 A5 JP 2010536159A5
- Authority
- JP
- Japan
- Prior art keywords
- degree
- amorphous
- barrier metal
- insulating film
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000004888 barrier function Effects 0.000 claims 18
- 239000004065 semiconductor Substances 0.000 claims 17
- 229910052751 metal Inorganic materials 0.000 claims 14
- 239000002184 metal Substances 0.000 claims 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 14
- 239000010410 layer Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims 6
- 229910052802 copper Inorganic materials 0.000 claims 6
- 239000010949 copper Substances 0.000 claims 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 4
- 229910045601 alloy Inorganic materials 0.000 claims 4
- 239000000956 alloy Substances 0.000 claims 4
- 230000007423 decrease Effects 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 2
- 229910052762 osmium Inorganic materials 0.000 claims 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000012299 nitrogen atmosphere Substances 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007202965 | 2007-08-03 | ||
| PCT/JP2008/002019 WO2009019827A1 (en) | 2007-08-03 | 2008-07-29 | Semiconductor device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010536159A JP2010536159A (ja) | 2010-11-25 |
| JP2010536159A5 true JP2010536159A5 (enExample) | 2011-09-15 |
Family
ID=39869726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009519684A Withdrawn JP2010536159A (ja) | 2007-08-03 | 2008-07-29 | 半導体装置及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20100007022A1 (enExample) |
| JP (1) | JP2010536159A (enExample) |
| WO (1) | WO2009019827A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012131756A1 (en) | 2011-03-28 | 2012-10-04 | Hitachi, Ltd. | Computer system and computer system management method |
| US10796996B2 (en) * | 2017-03-10 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of forming the same |
| CN109148356A (zh) * | 2017-06-15 | 2019-01-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| US11322502B2 (en) * | 2019-07-08 | 2022-05-03 | Micron Technology, Inc. | Apparatus including barrier materials within access line structures, and related methods and electronic systems |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3528665B2 (ja) * | 1998-10-20 | 2004-05-17 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| JP2002075994A (ja) * | 2000-08-24 | 2002-03-15 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US6703307B2 (en) * | 2001-11-26 | 2004-03-09 | Advanced Micro Devices, Inc. | Method of implantation after copper seed deposition |
| KR100805843B1 (ko) * | 2001-12-28 | 2008-02-21 | 에이에스엠지니텍코리아 주식회사 | 구리 배선 형성방법, 그에 따라 제조된 반도체 소자 및구리 배선 형성 시스템 |
| US20050206000A1 (en) * | 2004-03-19 | 2005-09-22 | Sanjeev Aggarwal | Barrier for copper integrated circuits |
| US7453149B2 (en) * | 2004-08-04 | 2008-11-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Composite barrier layer |
| US7446033B2 (en) * | 2005-01-25 | 2008-11-04 | Samung Electronics Co., Ltd. | Method of forming a metal interconnection of a semiconductor device, and metal interconnection formed by such method |
| DE102005023122A1 (de) * | 2005-05-19 | 2006-11-23 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Schichtstapel und Verfahren |
| US7550385B2 (en) * | 2005-09-30 | 2009-06-23 | Intel Corporation | Amine-free deposition of metal-nitride films |
-
2008
- 2008-07-29 US US12/518,611 patent/US20100007022A1/en not_active Abandoned
- 2008-07-29 JP JP2009519684A patent/JP2010536159A/ja not_active Withdrawn
- 2008-07-29 WO PCT/JP2008/002019 patent/WO2009019827A1/en not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9960117B2 (en) | Air gap semiconductor structure with selective cap bilayer | |
| TWI515860B (zh) | 具有銅內部互連之半導體設備及其製造方法 | |
| JP2009194322A5 (enExample) | ||
| JP2006302891A5 (enExample) | ||
| TW200743143A (en) | Method for forming self-aligned metal silicide contacts | |
| JP2011100991A5 (enExample) | ||
| TW200929631A (en) | Phase change memory structures | |
| JP2010267899A5 (enExample) | ||
| WO2008081824A1 (ja) | 半導体装置およびその製造方法 | |
| JP2010192605A5 (enExample) | ||
| CN111094623B (zh) | 利用欠电位沉积和热处理对薄金属层进行电化学掺杂 | |
| JP2010206057A5 (enExample) | ||
| JP2010536159A5 (enExample) | ||
| JP2010283337A5 (enExample) | ||
| CN102709232A (zh) | 一种用于铜互连的金属硬掩膜层的制备方法 | |
| TW201444021A (zh) | 銅／銅錳合金阻障層 | |
| JP2008205119A5 (enExample) | ||
| JP2013545302A5 (enExample) | ||
| JP2012519373A5 (enExample) | ||
| JP2009164471A5 (enExample) | ||
| TWI485777B (zh) | 積體電路與其製法 | |
| JP2008066678A5 (enExample) | ||
| WO2006098820A3 (en) | Method of forming a semiconductor device having a diffusion barrier stack and structure thereof | |
| JP2010080943A5 (enExample) | ||
| JP2010016355A5 (enExample) |