JP2013545302A5 - - Google Patents
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- Publication number
- JP2013545302A5 JP2013545302A5 JP2013536720A JP2013536720A JP2013545302A5 JP 2013545302 A5 JP2013545302 A5 JP 2013545302A5 JP 2013536720 A JP2013536720 A JP 2013536720A JP 2013536720 A JP2013536720 A JP 2013536720A JP 2013545302 A5 JP2013545302 A5 JP 2013545302A5
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- dielectric layer
- forming
- atoms
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims 64
- 238000000034 method Methods 0.000 claims 21
- 239000000758 substrate Substances 0.000 claims 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 12
- 229910052698 phosphorus Inorganic materials 0.000 claims 12
- 239000011574 phosphorus Substances 0.000 claims 12
- 229910052751 metal Inorganic materials 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 239000004020 conductor Substances 0.000 claims 6
- 239000000463 material Substances 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910004200 TaSiN Inorganic materials 0.000 claims 3
- 229910008482 TiSiN Inorganic materials 0.000 claims 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 3
- 229910008807 WSiN Inorganic materials 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 3
- 229910052737 gold Inorganic materials 0.000 claims 3
- 239000010931 gold Substances 0.000 claims 3
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 235000012239 silicon dioxide Nutrition 0.000 claims 3
- 239000000377 silicon dioxide Substances 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US40637510P | 2010-10-25 | 2010-10-25 | |
| US61/406,375 | 2010-10-25 | ||
| US13/267,674 | 2011-10-06 | ||
| US13/267,674 US8373215B2 (en) | 2010-10-25 | 2011-10-06 | Zero temperature coefficient capacitor |
| PCT/US2011/057672 WO2012061126A2 (en) | 2010-10-25 | 2011-10-25 | Integrated circuit with zero temperature coefficient capacitor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013545302A JP2013545302A (ja) | 2013-12-19 |
| JP2013545302A5 true JP2013545302A5 (enExample) | 2014-12-11 |
| JP5961618B2 JP5961618B2 (ja) | 2016-08-02 |
Family
ID=45972260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013536720A Active JP5961618B2 (ja) | 2010-10-25 | 2011-10-25 | ゼロ温度係数キャパシタを備えた集積回路 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8373215B2 (enExample) |
| JP (1) | JP5961618B2 (enExample) |
| CN (1) | CN103180947B (enExample) |
| WO (1) | WO2012061126A2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8901710B2 (en) * | 2013-02-27 | 2014-12-02 | International Business Machines Corporation | Interdigitated capacitors with a zero quadratic voltage coefficient of capacitance or zero linear temperature coefficient of capacitance |
| US8890223B1 (en) * | 2013-08-06 | 2014-11-18 | Texas Instruments Incorporated | High voltage hybrid polymeric-ceramic dielectric capacitor |
| US10978548B2 (en) * | 2016-11-10 | 2021-04-13 | Texas Instruments Incorporated | Integrated capacitor with sidewall having reduced roughness |
| US11469761B1 (en) | 2020-09-11 | 2022-10-11 | Mixed-Signal Devices Inc. | CMOS frequency reference circuit with temperature coefficient cancellation |
| US12261596B1 (en) | 2020-09-11 | 2025-03-25 | Mixed-Signal Devices Inc. | Systems and methods for low temperature coefficient capacitors |
| WO2022069967A1 (en) | 2020-10-01 | 2022-04-07 | 3M Innovative Properties Company | Dielectric material for a high voltage capacitor |
| US12085972B1 (en) | 2021-04-01 | 2024-09-10 | Mixed-Signal Devices Inc. | Sampled band-gap reference voltage generators |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4639274A (en) * | 1984-11-28 | 1987-01-27 | Fairchild Semiconductor Corporation | Method of making precision high-value MOS capacitors |
| JPS63301554A (ja) * | 1987-01-14 | 1988-12-08 | テキサス インスツルメンツ インコーポレイテツド | ポリシリコン層形成方法 |
| US4826709A (en) * | 1988-02-29 | 1989-05-02 | American Telephone And Telegraph Company At&T Bell Laboratories | Devices involving silicon glasses |
| US5079670A (en) * | 1988-05-03 | 1992-01-07 | Texas Instruments Incorporated | Metal plate capacitor and method for making the same |
| US4938847A (en) * | 1989-08-18 | 1990-07-03 | American Telephone And Telegraph Company | Method of manufacturing semiconductor devices, involving the detection of water |
| EP0738014B1 (en) * | 1993-08-05 | 2003-10-15 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method of semiconductor device having high dielectric constant capacitor |
| US6503841B1 (en) * | 2000-07-07 | 2003-01-07 | Agere Systems Inc. | Oxide etch |
| US6580864B1 (en) * | 2002-01-14 | 2003-06-17 | Applied Wdm, Inc. | Birefringence free optical waveguide structures |
| KR100502972B1 (ko) * | 2002-12-04 | 2005-07-26 | 주식회사 코아매직 | 리프레쉬 동작용 클럭발생기 |
| US7498219B2 (en) * | 2003-04-15 | 2009-03-03 | Texas Instruments Incorporated | Methods for reducing capacitor dielectric absorption and voltage coefficient |
| US6870418B1 (en) * | 2003-12-30 | 2005-03-22 | Intel Corporation | Temperature and/or process independent current generation circuit |
| JP2009182271A (ja) * | 2008-01-31 | 2009-08-13 | Toshiba Corp | 炭化珪素半導体装置 |
| JP5515245B2 (ja) * | 2008-04-30 | 2014-06-11 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
| JP5562603B2 (ja) * | 2008-09-30 | 2014-07-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2011077294A (ja) * | 2009-09-30 | 2011-04-14 | Asahi Kasei Electronics Co Ltd | 半導体装置の製造方法 |
-
2011
- 2011-10-06 US US13/267,674 patent/US8373215B2/en active Active
- 2011-10-25 WO PCT/US2011/057672 patent/WO2012061126A2/en not_active Ceased
- 2011-10-25 CN CN201180051289.4A patent/CN103180947B/zh active Active
- 2011-10-25 JP JP2013536720A patent/JP5961618B2/ja active Active
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