JP5961618B2 - ゼロ温度係数キャパシタを備えた集積回路 - Google Patents

ゼロ温度係数キャパシタを備えた集積回路 Download PDF

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Publication number
JP5961618B2
JP5961618B2 JP2013536720A JP2013536720A JP5961618B2 JP 5961618 B2 JP5961618 B2 JP 5961618B2 JP 2013536720 A JP2013536720 A JP 2013536720A JP 2013536720 A JP2013536720 A JP 2013536720A JP 5961618 B2 JP5961618 B2 JP 5961618B2
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capacitor
dielectric layer
forming
atoms
phosphorus
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Japanese (ja)
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JP2013545302A (ja
JP2013545302A5 (enExample
Inventor
ティエン ウェイドン
ティエン ウェイドン
カーン イムラン
カーン イムラン
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日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2013536720A 2010-10-25 2011-10-25 ゼロ温度係数キャパシタを備えた集積回路 Active JP5961618B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US40637510P 2010-10-25 2010-10-25
US61/406,375 2010-10-25
US13/267,674 2011-10-06
US13/267,674 US8373215B2 (en) 2010-10-25 2011-10-06 Zero temperature coefficient capacitor
PCT/US2011/057672 WO2012061126A2 (en) 2010-10-25 2011-10-25 Integrated circuit with zero temperature coefficient capacitor

Publications (3)

Publication Number Publication Date
JP2013545302A JP2013545302A (ja) 2013-12-19
JP2013545302A5 JP2013545302A5 (enExample) 2014-12-11
JP5961618B2 true JP5961618B2 (ja) 2016-08-02

Family

ID=45972260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013536720A Active JP5961618B2 (ja) 2010-10-25 2011-10-25 ゼロ温度係数キャパシタを備えた集積回路

Country Status (4)

Country Link
US (1) US8373215B2 (enExample)
JP (1) JP5961618B2 (enExample)
CN (1) CN103180947B (enExample)
WO (1) WO2012061126A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901710B2 (en) * 2013-02-27 2014-12-02 International Business Machines Corporation Interdigitated capacitors with a zero quadratic voltage coefficient of capacitance or zero linear temperature coefficient of capacitance
US8890223B1 (en) * 2013-08-06 2014-11-18 Texas Instruments Incorporated High voltage hybrid polymeric-ceramic dielectric capacitor
US10978548B2 (en) * 2016-11-10 2021-04-13 Texas Instruments Incorporated Integrated capacitor with sidewall having reduced roughness
US11469761B1 (en) 2020-09-11 2022-10-11 Mixed-Signal Devices Inc. CMOS frequency reference circuit with temperature coefficient cancellation
US12261596B1 (en) 2020-09-11 2025-03-25 Mixed-Signal Devices Inc. Systems and methods for low temperature coefficient capacitors
WO2022069967A1 (en) 2020-10-01 2022-04-07 3M Innovative Properties Company Dielectric material for a high voltage capacitor
US12085972B1 (en) 2021-04-01 2024-09-10 Mixed-Signal Devices Inc. Sampled band-gap reference voltage generators

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639274A (en) * 1984-11-28 1987-01-27 Fairchild Semiconductor Corporation Method of making precision high-value MOS capacitors
JPS63301554A (ja) * 1987-01-14 1988-12-08 テキサス　インスツルメンツ　インコーポレイテツド ポリシリコン層形成方法
US4826709A (en) * 1988-02-29 1989-05-02 American Telephone And Telegraph Company At&T Bell Laboratories Devices involving silicon glasses
US5079670A (en) * 1988-05-03 1992-01-07 Texas Instruments Incorporated Metal plate capacitor and method for making the same
US4938847A (en) * 1989-08-18 1990-07-03 American Telephone And Telegraph Company Method of manufacturing semiconductor devices, involving the detection of water
EP0738014B1 (en) * 1993-08-05 2003-10-15 Matsushita Electric Industrial Co., Ltd. Manufacturing method of semiconductor device having high dielectric constant capacitor
US6503841B1 (en) * 2000-07-07 2003-01-07 Agere Systems Inc. Oxide etch
US6580864B1 (en) * 2002-01-14 2003-06-17 Applied Wdm, Inc. Birefringence free optical waveguide structures
KR100502972B1 (ko) * 2002-12-04 2005-07-26 주식회사 코아매직 리프레쉬 동작용 클럭발생기
US7498219B2 (en) * 2003-04-15 2009-03-03 Texas Instruments Incorporated Methods for reducing capacitor dielectric absorption and voltage coefficient
US6870418B1 (en) * 2003-12-30 2005-03-22 Intel Corporation Temperature and/or process independent current generation circuit
JP2009182271A (ja) * 2008-01-31 2009-08-13 Toshiba Corp 炭化珪素半導体装置
JP5515245B2 (ja) * 2008-04-30 2014-06-11 セイコーエプソン株式会社 半導体装置及びその製造方法
JP5562603B2 (ja) * 2008-09-30 2014-07-30 株式会社半導体エネルギー研究所 表示装置
JP2011077294A (ja) * 2009-09-30 2011-04-14 Asahi Kasei Electronics Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
WO2012061126A3 (en) 2012-08-02
CN103180947A (zh) 2013-06-26
JP2013545302A (ja) 2013-12-19
US20120098045A1 (en) 2012-04-26
WO2012061126A2 (en) 2012-05-10
CN103180947B (zh) 2015-09-16
US8373215B2 (en) 2013-02-12

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