JP2010080943A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP2010080943A
JP2010080943A JP2009194370A JP2009194370A JP2010080943A JP 2010080943 A JP2010080943 A JP 2010080943A JP 2009194370 A JP2009194370 A JP 2009194370A JP 2009194370 A JP2009194370 A JP 2009194370A JP 2010080943 A JP2010080943 A JP 2010080943A
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Japan
Prior art keywords
region
insulating film
electrode
ion
film
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JP2009194370A
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English (en)
Japanese (ja)
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JP2010080943A5 (enExample
Inventor
Kazuya Hanaoka
一哉 花岡
Miki Suzuki
視喜 鈴木
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009194370A priority Critical patent/JP2010080943A/ja
Publication of JP2010080943A publication Critical patent/JP2010080943A/ja
Publication of JP2010080943A5 publication Critical patent/JP2010080943A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76823—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. transforming an insulating layer into a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2009194370A 2008-08-27 2009-08-25 半導体装置の作製方法 Withdrawn JP2010080943A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009194370A JP2010080943A (ja) 2008-08-27 2009-08-25 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008217613 2008-08-27
JP2009194370A JP2010080943A (ja) 2008-08-27 2009-08-25 半導体装置の作製方法

Publications (2)

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JP2010080943A true JP2010080943A (ja) 2010-04-08
JP2010080943A5 JP2010080943A5 (enExample) 2012-09-13

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ID=41726080

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JP2009194370A Withdrawn JP2010080943A (ja) 2008-08-27 2009-08-25 半導体装置の作製方法

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US (2) US8222097B2 (enExample)
JP (1) JP2010080943A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011012722A1 (de) 2010-03-31 2011-10-06 Mazda Motor Corp. Verfahren zur Detektion anomaler Verbrennung für einen Fremdzündungsmotor und Fremdzündungsmotor

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8610155B2 (en) * 2008-11-18 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, method for manufacturing the same, and cellular phone
US8576209B2 (en) 2009-07-07 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5960000B2 (ja) * 2012-09-05 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
TWI625847B (zh) * 2016-09-09 2018-06-01 友達光電股份有限公司 畫素結構及其製作方法
US12112982B2 (en) * 2018-11-14 2024-10-08 Northwestern University Nanoscale resolution, spatially-controlled conductivity modulation of dielectric materials using a focused ion beam

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02504092A (ja) * 1987-06-12 1990-11-22 マサチューセッツ インスティテュート オブ テクノロジー 積層回路における層間導電路の製造
JPH06318559A (ja) * 1993-05-07 1994-11-15 Hitachi Ltd 高エネルギーイオン注入による半導体装置の製造方法
JP2005340377A (ja) * 2004-05-25 2005-12-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法及び半導体装置

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US5354695A (en) 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US5985693A (en) 1994-09-30 1999-11-16 Elm Technology Corporation High density three-dimensional IC interconnection
WO1995025341A1 (en) 1994-03-15 1995-09-21 Irvine Sensors Corporation 3d stack of ic chips having leads reached by vias through passivation covering access plane
JPH08222631A (ja) 1995-02-13 1996-08-30 Sony Corp 多層配線形成方法
JPH11163129A (ja) 1997-11-28 1999-06-18 Sanyo Electric Co Ltd 半導体装置の製造方法
US6271542B1 (en) 1997-12-08 2001-08-07 International Business Machines Corporation Merged logic and memory combining thin film and bulk Si transistors
JP2002151816A (ja) 2000-11-10 2002-05-24 Ibiden Co Ltd 表裏間導電箇所を有する絶縁膜およびその製造方法
TW513791B (en) 2001-09-26 2002-12-11 Orient Semiconductor Elect Ltd Modularized 3D stacked IC package
US6717222B2 (en) 2001-10-07 2004-04-06 Guobiao Zhang Three-dimensional memory
TW519310U (en) 2001-12-18 2003-01-21 Via Tech Inc Electric connection apparatus
US6762076B2 (en) 2002-02-20 2004-07-13 Intel Corporation Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices
US6835974B2 (en) 2002-03-14 2004-12-28 Jeng-Jye Shau Three dimensional integrated circuits using sub-micron thin-film diodes
US7312487B2 (en) 2004-08-16 2007-12-25 International Business Machines Corporation Three dimensional integrated circuit
US7262494B2 (en) 2005-03-16 2007-08-28 Freescale Semiconductor, Inc. Three-dimensional package
US7485968B2 (en) 2005-08-11 2009-02-03 Ziptronix, Inc. 3D IC method and device
US7626257B2 (en) 2006-01-18 2009-12-01 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
CN101743629B (zh) * 2007-07-17 2012-06-13 夏普株式会社 具备薄膜晶体管的半导体装置及其制造方法
US7943473B2 (en) 2009-01-13 2011-05-17 Maxim Integrated Products, Inc. Minimum cost method for forming high density passive capacitors for replacement of discrete board capacitors using a minimum cost 3D wafer-to-wafer modular integration scheme
US9406561B2 (en) 2009-04-20 2016-08-02 International Business Machines Corporation Three dimensional integrated circuit integration using dielectric bonding first and through via formation last

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02504092A (ja) * 1987-06-12 1990-11-22 マサチューセッツ インスティテュート オブ テクノロジー 積層回路における層間導電路の製造
JPH06318559A (ja) * 1993-05-07 1994-11-15 Hitachi Ltd 高エネルギーイオン注入による半導体装置の製造方法
JP2005340377A (ja) * 2004-05-25 2005-12-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法及び半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011012722A1 (de) 2010-03-31 2011-10-06 Mazda Motor Corp. Verfahren zur Detektion anomaler Verbrennung für einen Fremdzündungsmotor und Fremdzündungsmotor
DE102011012722B4 (de) 2010-03-31 2019-09-12 Mazda Motor Corp. Verfahren zur Detektion anomaler Verbrennung für einen Fremdzündungsmotor und Fremdzündungsmotor

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US20100055894A1 (en) 2010-03-04
US8530973B2 (en) 2013-09-10
US20130009247A1 (en) 2013-01-10
US8222097B2 (en) 2012-07-17

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