CN102683343B - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN102683343B CN102683343B CN201210059659.5A CN201210059659A CN102683343B CN 102683343 B CN102683343 B CN 102683343B CN 201210059659 A CN201210059659 A CN 201210059659A CN 102683343 B CN102683343 B CN 102683343B
- Authority
- CN
- China
- Prior art keywords
- capacity cell
- resistive element
- semiconductor device
- semiconductor substrate
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 29
- 229920005591 polysilicon Polymers 0.000 claims abstract description 29
- 238000000926 separation method Methods 0.000 claims abstract description 21
- 239000012535 impurity Substances 0.000 claims description 15
- 239000011229 interlayer Substances 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000008676 import Effects 0.000 claims 4
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 3
- YTAHJIFKAKIKAV-XNMGPUDCSA-N [(1R)-3-morpholin-4-yl-1-phenylpropyl] N-[(3S)-2-oxo-5-phenyl-1,3-dihydro-1,4-benzodiazepin-3-yl]carbamate Chemical compound O=C1[C@H](N=C(C2=C(N1)C=CC=C2)C1=CC=CC=C1)NC(O[C@H](CCN1CCOCC1)C1=CC=CC=C1)=O YTAHJIFKAKIKAV-XNMGPUDCSA-N 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 6
- 230000000149 penetrating effect Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- UPSOBXZLFLJAKK-UHFFFAOYSA-N ozone;tetraethyl silicate Chemical compound [O-][O+]=O.CCO[Si](OCC)(OCC)OCC UPSOBXZLFLJAKK-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-050242 | 2011-03-08 | ||
JP2011050242A JP5616823B2 (ja) | 2011-03-08 | 2011-03-08 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102683343A CN102683343A (zh) | 2012-09-19 |
CN102683343B true CN102683343B (zh) | 2016-02-17 |
Family
ID=46794748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210059659.5A Expired - Fee Related CN102683343B (zh) | 2011-03-08 | 2012-03-08 | 半导体装置及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8581316B2 (zh) |
JP (1) | JP5616823B2 (zh) |
KR (1) | KR101899155B1 (zh) |
CN (1) | CN102683343B (zh) |
TW (1) | TWI539531B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5546298B2 (ja) | 2010-03-15 | 2014-07-09 | セイコーインスツル株式会社 | 半導体回路装置の製造方法 |
CN103855160A (zh) * | 2012-12-03 | 2014-06-11 | 上海华虹宏力半导体制造有限公司 | 新型otp器件结构及其制造方法 |
US9117845B2 (en) | 2013-01-25 | 2015-08-25 | Fairchild Semiconductor Corporation | Production of laterally diffused oxide semiconductor (LDMOS) device and a bipolar junction transistor (BJT) device using a semiconductor process |
US8987107B2 (en) * | 2013-02-19 | 2015-03-24 | Fairchild Semiconductor Corporation | Production of high-performance passive devices using existing operations of a semiconductor process |
CN103646947B (zh) * | 2013-11-29 | 2016-05-04 | 无锡中感微电子股份有限公司 | 平面工艺下的三维集成电路及其制造方法 |
CN105226044B (zh) | 2014-05-29 | 2018-12-18 | 联华电子股份有限公司 | 集成电路及形成集成电路的方法 |
KR20210011214A (ko) * | 2019-07-22 | 2021-02-01 | 삼성전자주식회사 | 도핑 영역을 갖는 저항 소자 및 이를 포함하는 반도체 소자 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1190257A (zh) * | 1997-12-08 | 1998-08-12 | 中国科学院上海冶金研究所 | 双层多晶cmos数模混合集成电路及其制造方法 |
CN2752961Y (zh) * | 2003-10-24 | 2006-01-18 | 雅马哈株式会社 | 带有电容器和熔断层的半导体器件 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5726084A (en) * | 1993-06-24 | 1998-03-10 | Northern Telecom Limited | Method for forming integrated circuit structure |
US5930638A (en) * | 1993-07-12 | 1999-07-27 | Peregrine Semiconductor Corp. | Method of making a low parasitic resistor on ultrathin silicon on insulator |
US5837592A (en) * | 1995-12-07 | 1998-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for stabilizing polysilicon resistors |
KR100209278B1 (ko) * | 1995-12-30 | 1999-07-15 | 김영환 | 반도체 소자의 폴리레지스터 구조 및 그 제조방법 |
US5866451A (en) * | 1996-05-28 | 1999-02-02 | Taiwan Semiconductor Manufacturing Company Ltd | Method of making a semiconductor device having 4t sram and mixed-mode capacitor in logic |
JP4202031B2 (ja) * | 1996-08-02 | 2008-12-24 | セイコーインスツル株式会社 | Mos型半導体装置とその製造方法 |
JPH11312791A (ja) * | 1998-04-30 | 1999-11-09 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置 |
JP2000058755A (ja) * | 1998-06-02 | 2000-02-25 | Seiko Instruments Inc | 半導体装置とその製造方法 |
JP3180783B2 (ja) * | 1998-11-11 | 2001-06-25 | 日本電気株式会社 | 半導体装置の製造方法、及び、半導体装置 |
JP2001257272A (ja) * | 2000-03-10 | 2001-09-21 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US6580145B2 (en) * | 2001-01-16 | 2003-06-17 | Taiwan Semiconductor Manufacturing Co., Ltd | Low programming voltage anti-fuse structure |
JP2002313940A (ja) * | 2001-04-10 | 2002-10-25 | Seiko Instruments Inc | 半導体装置の製造方法 |
US6448137B1 (en) * | 2001-11-02 | 2002-09-10 | Macronix International Co. Ltd. | Method of forming an NROM embedded with mixed-signal circuits |
JP4298955B2 (ja) | 2002-03-14 | 2009-07-22 | Idec株式会社 | 配線接続装置 |
JP2003282726A (ja) | 2002-03-27 | 2003-10-03 | Nec Electronics Corp | 半導体装置及びその製造方法 |
US6888219B2 (en) * | 2002-08-29 | 2005-05-03 | Honeywell International, Inc. | Integrated structure with microwave components |
KR100456700B1 (ko) * | 2002-10-09 | 2004-11-10 | 삼성전자주식회사 | 저항 패턴을 가지는 반도체 장치 및 그 제조방법 |
US7022246B2 (en) * | 2003-01-06 | 2006-04-04 | International Business Machines Corporation | Method of fabrication of MIMCAP and resistor at same level |
JP4282328B2 (ja) * | 2003-01-27 | 2009-06-17 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7239005B2 (en) * | 2003-07-18 | 2007-07-03 | Yamaha Corporation | Semiconductor device with bypass capacitor |
JP2005116981A (ja) | 2003-10-10 | 2005-04-28 | Hitachi Ltd | 半導体装置 |
TWI246767B (en) * | 2003-10-24 | 2006-01-01 | Yamaha Corp | Semiconductor device with capacitor and fuse and its manufacture method |
JP2005183686A (ja) * | 2003-12-19 | 2005-07-07 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US20070090417A1 (en) * | 2005-10-26 | 2007-04-26 | Chiaki Kudo | Semiconductor device and method for fabricating the same |
US7696603B2 (en) * | 2006-01-26 | 2010-04-13 | Texas Instruments Incorporated | Back end thin film capacitor having both plates of thin film resistor material at single metallization layer |
KR100848241B1 (ko) * | 2006-12-27 | 2008-07-24 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조방법 |
US8786396B2 (en) * | 2008-09-17 | 2014-07-22 | Stmicroelectronics Pte. Ltd. | Heater design for heat-trimmed thin film resistors |
US8058125B1 (en) * | 2010-08-04 | 2011-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Poly resistor on a semiconductor device |
US8796745B2 (en) * | 2011-07-05 | 2014-08-05 | Texas Instruments Incorporated | Monolithically integrated active snubber |
US8779526B2 (en) * | 2011-10-28 | 2014-07-15 | United Microelectronics Corp. | Semiconductor device |
-
2011
- 2011-03-08 JP JP2011050242A patent/JP5616823B2/ja not_active Expired - Fee Related
-
2012
- 2012-02-16 TW TW101105109A patent/TWI539531B/zh not_active IP Right Cessation
- 2012-03-01 US US13/409,261 patent/US8581316B2/en not_active Expired - Fee Related
- 2012-03-07 KR KR1020120023438A patent/KR101899155B1/ko active IP Right Grant
- 2012-03-08 CN CN201210059659.5A patent/CN102683343B/zh not_active Expired - Fee Related
-
2013
- 2013-10-08 US US14/048,948 patent/US8963224B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1190257A (zh) * | 1997-12-08 | 1998-08-12 | 中国科学院上海冶金研究所 | 双层多晶cmos数模混合集成电路及其制造方法 |
CN2752961Y (zh) * | 2003-10-24 | 2006-01-18 | 雅马哈株式会社 | 带有电容器和熔断层的半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
JP5616823B2 (ja) | 2014-10-29 |
US20140035016A1 (en) | 2014-02-06 |
KR101899155B1 (ko) | 2018-09-14 |
TWI539531B (zh) | 2016-06-21 |
US20120228686A1 (en) | 2012-09-13 |
US8581316B2 (en) | 2013-11-12 |
CN102683343A (zh) | 2012-09-19 |
JP2012186426A (ja) | 2012-09-27 |
TW201248737A (en) | 2012-12-01 |
KR20120102541A (ko) | 2012-09-18 |
US8963224B2 (en) | 2015-02-24 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160405 Address after: Chiba County, Japan Patentee after: SEIKO INSTR INC Address before: Chiba County, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: EPPs Lingke Co. Ltd. Address before: Chiba County, Japan Patentee before: SEIKO INSTR INC |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160217 Termination date: 20210308 |