JP2010066268A - 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 - Google Patents
回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 Download PDFInfo
- Publication number
- JP2010066268A JP2010066268A JP2009244069A JP2009244069A JP2010066268A JP 2010066268 A JP2010066268 A JP 2010066268A JP 2009244069 A JP2009244069 A JP 2009244069A JP 2009244069 A JP2009244069 A JP 2009244069A JP 2010066268 A JP2010066268 A JP 2010066268A
- Authority
- JP
- Japan
- Prior art keywords
- parameters
- diffractive structure
- wavelengths
- spectroscopic
- directing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
- G01N2021/213—Spectrometric ellipsometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
- G01N2021/556—Measuring separately scattering and specular
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
- G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
【解決手段】半導体ウェハ12上の回折構造体12cからの回折の前に、必要な場合は、分光反射率計60または分光エリプソメータを使って構造体の下に位置する膜12bの膜厚と屈折率とをまず測定する。そして、厳密なモデルを使って回折構造体の強度またはエリプソメトリックな署名を計算する。次に、偏光放射線および広帯域放射線を用いた分光散乱計を使って回折構造体を測定して回折構造体の強度またはエリプソメトリックな署名を得る。この署名をデータベース内の署名と適合させて構造体の格子型パラメータを判定する。
【選択図】図1A
Description
ここで、λは、入射光の波長であり、dは、回折構造体の周期である。
Claims (76)
- 光学指数および膜厚を有する隣接構造上に位置する回折構造体の複数のパラメータを測定する方法であって、
前記隣接構造の光学指数および膜厚を求める工程と、
前記隣接構造の光学指数および膜厚を用いて前記回折構造体に対する前記複数のパラメータの参照データベースを構築する工程と、
前記回折構造体に複数の波長の電磁放射線の光線を方向付ける工程と、
前記光線の前記回折構造体から前記複数の波長における回折の強度データを検出する工程と、
前記複数のパラメータを判定するために、前記検出した強度データを前記データベースと比較する工程と、
を含む方法。 - 請求項1記載の方法において、
前記方向付ける工程が、前記光線を回折構造体に対して傾斜角をなして方向付ける方法。 - 請求項2記載の方法において、
前記傾斜角が、構造体に対して直角な角度から約40〜80°の範囲にある方法。 - 請求項2記載の方法において、
前記検出する工程が、前記回折構造体から前記光線のゼロ次回折を検出する方法。 - 請求項2記載の方法において、
前記方向付ける工程が、偏光放射線を回折構造体に方向付ける方法。 - 請求項1記載の方法において、
前記検出する工程が、前記回折構造体から前記光線のゼロ次回折を検出する方法。 - 請求項6記載の方法において、
前記方向付ける工程が、偏光放射線を回折構造体に方向付ける方法。 - 請求項1記載の方法において、
前記構築する工程が複数の関数からなる参照データベースを構築し、前記関数が、それぞれ、前記構造体の前記複数のパラメータに対応し、かつ前記複数の波長における強度値を提供する方法。 - 請求項8記載の方法において、
前記関数が、それぞれ、前記回折構造体の推定線幅、高さ、または側壁角に対応する方法。 - 請求項1記載の方法において、
前記方向付ける工程が、偏光放射線を回折構造体に方向付ける方法。 - 請求項1記載の方法において、
前記構築する工程が、参照サンプルを用いずにモデルによって前記データベースを構築する方法。 - 請求項1記載の方法において、
前記複数の波長が、紫外線波長を含む方法。 - 請求項1記載の方法において、
前記構築する工程が波長のスペクトルに対して前記複数のパラメータの参照データベースを構築し、前記方向付ける工程が前記スペクトルを含む波長の広帯域放射線の光線を方向付け、前記検出する工程が前記波長のスペクトルに対して強度データを検出する方法。 - 請求項13記載の方法において、
前記比較する工程が、前記スペクトルの選択した部分の波長における強度データをデータベースの一部と比較する方法。 - 請求項14記載の方法において、
前記スペクトルが紫外線波長を含み、前記部分が紫外線領域の波長からなる方法。 - 請求項1記載の方法において、
前記求める工程が、前記隣接構造の光学指数および膜厚を測定する方法。 - 請求項16記載の方法において、
前記測定を分光エリプソメータ、分光側光器、または分光反射率計から測定する方法。 - 光学指数および膜厚を有する、少なくとも一つの隣接構造上に位置する回折構造体の複数のパラメータを測定する装置であって、
前記隣接構造の光学指数および膜厚を用いて前記回折構造体に対する前記複数のパラメータの参照データベースを構築する手段と、
前記回折構造体に複数の波長の電磁放射線の光線を方向付ける手段と、
前記光線の前記回折構造体から前記複数の波長における回折の強度データを検出する手段と、
前記複数のパラメータを判定するために、前記検出した強度データを前記データベースと比較する手段と、
を備える装置。 - 請求項18記載の装置において、
前記回折構造体が表面を有する材料の層を含み、前記方向付ける手段が前記光線を前記回折構造体の表面に対して傾斜角をなして方向付ける装置。 - 請求項19記載の装置において、
前記傾斜角が、約40〜80°の範囲にある方法。 - 請求項20記載の装置において、
前記検出する手段が、前記回折構造体から前記光線のゼロ次回折を検出する装置。 - 請求項19記載の装置において、
前記方向付ける手段が、偏光放射線を回折構造体に方向付ける装置。 - 請求項18記載の装置において、
前記検出する手段が、前記回折構造体から前記光線のゼロ次回折を検出する装置。 - 請求項23記載の装置において、
前記方向付ける手段が、偏光器を含む装置。 - 請求項18記載の装置において、
前記構築する手段が複数の関数からなる参照データベースを構築し、前記関数が、それぞれ、前記構造体の前記複数のパラメータに対応し、かつ前記複数の波長における強度値を提供する装置。 - 請求項25記載の装置において、
前記関数が、それぞれ、前記回折構造体の推定線幅、高さ、または側壁角に対応する装置。 - 請求項18記載の装置において、
前記方向付ける手段が、偏光放射線を回折構造体に方向付ける装置。 - 請求項18記載の装置において、
前記構築する手段が、参照サンプルを用いずにモデルによって前記データベースを構築する装置。 - 請求項18記載の装置において、
前記複数の波長が、紫外線波長を含む装置。 - 請求項18記載の装置において、
前記構築する手段が波長のスペクトルに対して前記複数のパラメータの参照データベースを構築し、前記方向付ける手段が前記スペクトルを含む波長の広帯域放射線の光線を方向付け、前記検出する手段が前記波長のスペクトルに対して強度データを検出する装置。 - 請求項30記載の装置において、
前記比較する手段が、前記スペクトルの選択した部分の波長における強度データをデータベースの一部と比較する装置。 - 請求項31記載の装置において、
前記スペクトルが紫外線波長を含み、前記部分が紫外線領域の波長からなる装置。 - 請求項18記載の装置において、
前記隣接構造の光学指数および膜厚を測定する手段をさらに備える装置。 - 請求項33記載の装置において、
前記測定する手段が、分光エリプソメータ、分光側光器、または分光反射率計を含む装置。 - 請求項33記載の装置において、
前記測定する手段および方向付ける手段が共通の光学要素を用い、前記要素が広帯域放射線源、偏光器、および分光計を含む装置。 - 請求項33記載の装置において、
前記測定する手段および方向付ける手段が共通の光学要素を用い、前記要素が偏光器および検光器を含み、前記偏光器および検光器は、強度データが前記構造体から検出される場合には実質的に同じ偏光の放射線を供給して出し、エリプソメトリックなパラメータが前記構造体から検出される場合には前記偏光器および検光器の間で回転が起こるように設定される装置。 - サンプルの隣接構造上に位置する回折構造体の複数のパラメータを測定する計器であって、
広帯域放射線源と、
前記放射線を偏光してサンプリング光線をサンプルに向けて供給する偏光器と、
構造体によって回折または反射されたサンプリング光線から放射線を受け取って出力光線を出す検光器と、
複数の波長で同時に出力光線から強度データを検出する分光計と、
前記隣接構造の特性を用いて前記回折構造に対する前記複数のパラメータの参照データベースを構築する手段と、
を備える計器。 - 請求項37記載の計器において、
サンプリング光線を隣接構造に対して方向付けるが、回折構造体に対して方向付けない場合には偏光器または検光器を回転させ、サンプリング光線を回折構造体に対して方向付ける場合には偏光器および検光器を回転させない手段をさらに備える計器。 - 請求項38記載の計器において、
前記回転手段が、実質的に同じ偏光を有する放射線を偏光器に供給させ、検光器に出させる計器。 - 請求項37記載の計器において、
サンプリング光線を回折構造体のない隣接構造に対して方向付け、かつサンプリング光線を回折構造体に対して方向付ける場合には偏光器または検光器を回転させる手段をさらに備える計器。 - 請求項37記載の計器において、
偏光放射線を供給して、前記偏光器および検出する手段に対する回折構造体の高さを調整する集束手段をさらに備える計器。 - 請求項41記載の計器において、
前記集束手段によって供給された偏光放射線が、サンプリング光線と実質的に同じ偏光を有する計器。 - サンプルの隣接構造上に位置する回折構造体の複数のパラメータを測定する方法であって、
前記隣接構造上で分光測定を行ってその特性を判定する工程と、
前記隣接構造の前記特性を用いて前記回折構造体に対する複数のパラメータの参照データベースを構築する工程と、
回折構造体上で散乱計測定を行って強度データまたはエリプソメトリックなデータを得る工程と、
前記複数のパラメータを導き出すために、前記強度データまたはエリプソメトリックなデータを参照データベースと比較する工程と、
を含む方法。 - 請求項43記載の方法において、
前記隣接構造の特性が、光学指数および膜厚を含む方法。 - 請求項44記載の方法において、
前記分光測定を行うことが、分光エリプソメトリ測定または分光反射光測定を行う方法。 - 請求項44記載の方法において、
前記分光測定および散乱計測定を広帯域放射線を用いて行う方法。 - 請求項44記載の方法において、
前記分光測定および散乱計測定を偏光放射線を用いて行う方法。 - 請求項44記載の方法において、
前記構築する工程が波長のスペクトルに対して前記複数のパラメータの参照データベースを構築し、前記散乱計測定を前記波長のスペクトルに対して行って前記スペクトルに対して強度データを得る方法。 - 請求項48記載の方法において、
前記比較する工程が、前記スペクトルの選択した部分の波長における強度データをデータベースの一部と比較する方法。 - 請求項49記載の方法において、
前記スペクトルが紫外線波長を含み、前記部分が紫外線領域の波長からなる方法。 - 請求項43記載の方法において、
前記散乱計測定を行うことが、複数の波長で実質的に同時に測定を行う方法。 - 請求項51記載の方法において、
前記比較する工程が、前記スペクトルの選択した部分の波長におけるエリプソメトリックなデータをデータベースの一部と比較する方法。 - 光学指数および膜厚を有する隣接構造上に位置する回折構造体の複数のパラメータを測定する方法であって、
前記隣接構造の光学指数および膜厚を求める工程と、
前記隣接構造の光学指数および膜厚を用いて前記回折構造体に対する前記複数のパラメータの参照データベースを構築する工程と、
前記回折構造体に複数の波長の電磁放射線の光線を方向付ける工程と、
前記光線の前記回折構造体から前記複数の波長における回折のエリプソメトリックなパラメータを検出する工程と、
前記検出したエリプソメトリックなパラメータを前記データベースと比較して前記複数のパラメータを判定する工程と、
を含む方法。 - 請求項53記載の方法において、
前記方向付ける工程が、前記光線を回折構造体に対して直角な角度から約40〜80°の範囲にある傾斜角をなして方向付ける方法。 - 請求項53記載の方法において、
前記検出する工程が、前記回折構造体から前記光線のゼロ次回折を検出する方法。 - 請求項53記載の方法において、
前記構築する工程が複数の関数からなる参照データベースを構築し、前記関数が、それぞれ、前記構造体の前記複数のパラメータに対応し、かつ前記複数の波長におけるエリプソメトリックなパラメータ値を提供する方法。 - 請求項56記載の方法において、
前記関数が、それぞれ、前記回折構造体の推定線幅、高さ、または側壁角に対応する方法。 - 請求項53記載の方法において、
前記複数の波長が、紫外線波長を含む方法。 - 請求項53記載の方法において、
前記構築する工程が波長のスペクトルに対して前記複数のパラメータの参照データベースを構築し、前記方向付ける工程が前記スペクトルを含む波長の広帯域放射線の光線を方向付け、前記検出する工程が前記波長のスペクトルに対してエリプソメトリックなパラメータを検出する方法。 - 請求項53記載の方法において、
前記求める工程が、前記隣接構造の光学指数および膜厚を測定する方法。 - 請求項60記載の方法において、
前記測定を分光エリプソメータ、分光側光器、または分光反射率計から測定する方法。 - 光学指数および膜厚を有する、少なくとも一つの隣接構造上に位置する回折構造体の複数のパラメータを測定する装置であって、
前記隣接構造の光学指数および膜厚を用いて前記回折構造体に対する前記複数のパラメータの参照データベースを構築する手段と、
前記回折構造体に複数の波長の電磁放射線の光線を方向付ける手段と、
前記光線の前記回折構造体から前記複数の波長における回折のエリプソメトリックなパラメータを検出する手段と、
前記検出したエリプソメトリックなパラメータを前記データベースと比較して前記複数のパラメータを判定する手段と、
を備える装置。 - 請求項62記載の装置において、
前記方向付ける手段が、前記光線を約40〜80°の範囲にある傾斜角をなして方向付ける装置。 - 請求項62記載の装置において、
前記複数の波長が、紫外線波長を含む装置。 - 請求項62記載の装置において、
前記検出する手段が、前記回折構造体から前記光線のゼロ次回折を検出する装置。 - 請求項62記載の装置において、
前記構築する手段が複数の関数からなる参照データベースを構築し、前記関数が、それぞれ、前記構造体の前記複数のパラメータに対応し、かつ前記複数の波長におけるエリプソメトリックなパラメータ値を提供する装置。 - 請求項66記載の装置において、
前記関数が、それぞれ、前記回折構造体の推定線幅、高さ、または側壁角に対応する装置。 - 請求項62記載の装置において、
前記構築する手段が波長のスペクトルに対して前記複数のパラメータの参照データベースを構築し、前記方向付ける手段が前記スペクトルを含む波長の広帯域放射線の光線を方向付け、前記検出する手段が前記波長のスペクトルに対してエリプソメトリックなパラメータを検出する装置。 - 請求項62記載の装置において、
前記隣接構造の光学指数および膜厚を測定する手段をさらに備える装置。 - 請求項69記載の装置において、
前記測定する手段が、分光エリプソメータ、分光側光器、または分光反射率計を含む装置。 - サンプルの隣接構造上に位置する回折構造体の複数のパラメータを測定する方法であって、
前記隣接構造上で分光測定を行ってその特性を判定する工程と、
前記隣接構造の前記特性を用いて前記回折構造体に対する前記複数のパラメータの参照データベースを構築する工程と、
回折構造体上で散乱計測定を行って複数の波長で実質的に同時にエリプソメトリックなデータを得る工程と、
前記エリプソメトリックなデータを参照データベースと比較して前記複数のパラメータを導き出す工程と、
を含む方法。 - 請求項71記載の方法において、
前記隣接構造の特性が、光学指数および膜厚を含む方法。 - 請求項72記載の方法において、
前記分光測定を行うことが、分光エリプソメトリ測定または分光反射光測定を行う方法。 - 請求項72記載の方法において、
前記分光測定および散乱計測定を広帯域放射線を用いて行う方法。 - 請求項72記載の方法において、
前記分光測定および散乱計測定を偏光放射線を用いて行う方法。 - 請求項72記載の方法において、
前記構築する工程が波長のスペクトルに対して前記複数のパラメータの参照データベースを構築し、前記散乱計測定を前記波長のスペクトルに対して行って前記スペクトルに対してエリプソメトリックなデータを得る方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/036,557 US6483580B1 (en) | 1998-03-06 | 1998-03-06 | Spectroscopic scatterometer system |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000534831A Division JP4633254B2 (ja) | 1998-03-06 | 1999-02-25 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010066268A true JP2010066268A (ja) | 2010-03-25 |
JP2010066268A5 JP2010066268A5 (ja) | 2010-07-22 |
JP4643737B2 JP4643737B2 (ja) | 2011-03-02 |
Family
ID=21889260
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000534831A Expired - Lifetime JP4633254B2 (ja) | 1998-03-06 | 1999-02-25 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2009244176A Expired - Lifetime JP5249169B2 (ja) | 1998-03-06 | 2009-10-23 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2009244175A Expired - Lifetime JP5563803B2 (ja) | 1998-03-06 | 2009-10-23 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2009244069A Expired - Lifetime JP4643737B2 (ja) | 1998-03-06 | 2009-10-23 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2010131079A Expired - Lifetime JP5102329B2 (ja) | 1998-03-06 | 2010-06-08 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2012267965A Pending JP2013083659A (ja) | 1998-03-06 | 2012-12-07 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000534831A Expired - Lifetime JP4633254B2 (ja) | 1998-03-06 | 1999-02-25 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2009244176A Expired - Lifetime JP5249169B2 (ja) | 1998-03-06 | 2009-10-23 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2009244175A Expired - Lifetime JP5563803B2 (ja) | 1998-03-06 | 2009-10-23 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010131079A Expired - Lifetime JP5102329B2 (ja) | 1998-03-06 | 2010-06-08 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2012267965A Pending JP2013083659A (ja) | 1998-03-06 | 2012-12-07 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
Country Status (6)
Country | Link |
---|---|
US (6) | US6483580B1 (ja) |
EP (2) | EP1508772B1 (ja) |
JP (6) | JP4633254B2 (ja) |
AU (1) | AU3310999A (ja) |
DE (1) | DE69922942T2 (ja) |
WO (1) | WO1999045340A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013525813A (ja) * | 2010-05-06 | 2013-06-20 | ケーエルエー−テンカー コーポレイション | 構造体の光学測定のための物質の光学的特性の決定方法 |
JP2022547214A (ja) * | 2019-09-13 | 2022-11-10 | アプライド マテリアルズ インコーポレイテッド | 測定システムおよびグレーティングパターンアレイ |
Families Citing this family (251)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6483580B1 (en) * | 1998-03-06 | 2002-11-19 | Kla-Tencor Technologies Corporation | Spectroscopic scatterometer system |
US20020030813A1 (en) * | 1999-03-29 | 2002-03-14 | Norton Adam E. | Spectroscopic measurement system using an off-axis spherical mirror and refractive elements |
US6690473B1 (en) * | 1999-02-01 | 2004-02-10 | Sensys Instruments Corporation | Integrated surface metrology |
US6184984B1 (en) | 1999-02-09 | 2001-02-06 | Kla-Tencor Corporation | System for measuring polarimetric spectrum and other properties of a sample |
IL130874A (en) | 1999-07-09 | 2002-12-01 | Nova Measuring Instr Ltd | System and method for measuring pattern structures |
US8531678B2 (en) | 1999-07-09 | 2013-09-10 | Nova Measuring Instruments, Ltd. | Method and system for measuring patterned structures |
US6432729B1 (en) | 1999-09-29 | 2002-08-13 | Lam Research Corporation | Method for characterization of microelectronic feature quality |
DE19950559B4 (de) | 1999-10-20 | 2006-08-17 | Steag Eta-Optik Gmbh | Verfahren zum Bestimmen von geometrischen Strukturen auf oder in einem Substrat sowie von Materialparametern |
AU2001234575A1 (en) * | 2000-01-26 | 2001-08-07 | Timbre Technologies, Incorporated | Caching of intra-layer calculations for rapid rigorous coupled-wave analyses |
US7230699B1 (en) * | 2002-10-15 | 2007-06-12 | J.A. Woollam Co., Inc. | Sample orientation system and method |
US6429943B1 (en) | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
US6689519B2 (en) | 2000-05-04 | 2004-02-10 | Kla-Tencor Technologies Corp. | Methods and systems for lithography process control |
US6462817B1 (en) | 2000-05-12 | 2002-10-08 | Carlos Strocchia-Rivera | Method of monitoring ion implants by examination of an overlying masking material |
AU2001279247A1 (en) | 2000-08-10 | 2002-02-25 | Sensys Instruments Corporation | Database interpolation method for optical measurement of diffractive microstructures |
US7317531B2 (en) * | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
IL138552A (en) | 2000-09-19 | 2006-08-01 | Nova Measuring Instr Ltd | Measurement of transverse displacement by optical method |
US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
US6891610B2 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining an implant characteristic and a presence of defects on a specimen |
US7115858B1 (en) * | 2000-09-25 | 2006-10-03 | Nanometrics Incorporated | Apparatus and method for the measurement of diffracting structures |
US7099005B1 (en) * | 2000-09-27 | 2006-08-29 | Kla-Tencor Technologies Corporation | System for scatterometric measurements and applications |
US6831742B1 (en) | 2000-10-23 | 2004-12-14 | Applied Materials, Inc | Monitoring substrate processing using reflected radiation |
WO2002035586A2 (en) * | 2000-10-23 | 2002-05-02 | Applied Materials, Inc. | Monitoring substrate processing using reflected radiation |
US6768983B1 (en) * | 2000-11-28 | 2004-07-27 | Timbre Technologies, Inc. | System and method for real-time library generation of grating profiles |
US6900892B2 (en) * | 2000-12-19 | 2005-05-31 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
US6819426B2 (en) | 2001-02-12 | 2004-11-16 | Therma-Wave, Inc. | Overlay alignment metrology using diffraction gratings |
US6864971B2 (en) * | 2001-03-27 | 2005-03-08 | Isoa, Inc. | System and method for performing optical inspection utilizing diffracted light |
US20020177245A1 (en) * | 2001-03-29 | 2002-11-28 | Sonderman Thomas J. | Method and apparatus for controlling feature critical dimensions based on scatterometry derived profile |
US20030002043A1 (en) * | 2001-04-10 | 2003-01-02 | Kla-Tencor Corporation | Periodic patterns and technique to control misalignment |
US6898537B1 (en) | 2001-04-27 | 2005-05-24 | Nanometrics Incorporated | Measurement of diffracting structures using one-half of the non-zero diffracted orders |
US7052575B1 (en) * | 2001-04-30 | 2006-05-30 | Advanced Micro Devices, Inc. | System and method for active control of etch process |
US7271901B2 (en) * | 2001-05-22 | 2007-09-18 | Horiba, Ltd. | Thin-film characteristic measuring method using spectroellipsometer |
US7382447B2 (en) * | 2001-06-26 | 2008-06-03 | Kla-Tencor Technologies Corporation | Method for determining lithographic focus and exposure |
US6773939B1 (en) * | 2001-07-02 | 2004-08-10 | Advanced Micro Devices, Inc. | Method and apparatus for determining critical dimension variation in a line structure |
US6713753B1 (en) * | 2001-07-03 | 2004-03-30 | Nanometrics Incorporated | Combination of normal and oblique incidence polarimetry for the characterization of gratings |
US6704661B1 (en) * | 2001-07-16 | 2004-03-09 | Therma-Wave, Inc. | Real time analysis of periodic structures on semiconductors |
US6678046B2 (en) * | 2001-08-28 | 2004-01-13 | Therma-Wave, Inc. | Detector configurations for optical metrology |
US7127098B2 (en) * | 2001-09-13 | 2006-10-24 | Hitachi, Ltd. | Image detection method and its apparatus and defect detection method and its apparatus |
US7061615B1 (en) | 2001-09-20 | 2006-06-13 | Nanometrics Incorporated | Spectroscopically measured overlay target |
CN1303477C (zh) * | 2001-10-10 | 2007-03-07 | 安格盛光电科技公司 | 利用截面分析确定聚焦中心 |
US6898596B2 (en) | 2001-10-23 | 2005-05-24 | Therma-Wave, Inc. | Evolution of library data sets |
JP3839306B2 (ja) * | 2001-11-08 | 2006-11-01 | 株式会社ルネサステクノロジ | 半導体装置の製造方法および製造システム |
US6746566B1 (en) | 2001-12-11 | 2004-06-08 | Kla-Tencor Technologies Corporation | Transverse magnetic field voltage isolator |
US6982791B2 (en) * | 2001-12-19 | 2006-01-03 | Therma-Wave, Inc. | Scatterometry to simultaneously measure critical dimensions and film properties |
AU2002360738A1 (en) * | 2001-12-19 | 2003-07-09 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
US7175503B2 (en) | 2002-02-04 | 2007-02-13 | Kla-Tencor Technologies Corp. | Methods and systems for determining a characteristic of polishing within a zone on a specimen from combined output signals of an eddy current device |
US6609086B1 (en) * | 2002-02-12 | 2003-08-19 | Timbre Technologies, Inc. | Profile refinement for integrated circuit metrology |
JP3878027B2 (ja) * | 2002-02-18 | 2007-02-07 | 東京エレクトロン株式会社 | 偏光解析方法及び光学的膜厚測定装置 |
US6643008B1 (en) * | 2002-02-26 | 2003-11-04 | Advanced Micro Devices, Inc. | Method of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures |
US7136796B2 (en) * | 2002-02-28 | 2006-11-14 | Timbre Technologies, Inc. | Generation and use of integrated circuit profile-based simulation information |
US6785009B1 (en) * | 2002-02-28 | 2004-08-31 | Advanced Micro Devices, Inc. | Method of using high yielding spectra scatterometry measurements to control semiconductor manufacturing processes, and systems for accomplishing same |
IL148484A (en) * | 2002-03-04 | 2008-11-26 | Nova Measuring Instr Ltd | Optical measurements of patterned structures |
US6791697B1 (en) * | 2002-03-21 | 2004-09-14 | Advanced Micro Devices, Inc. | Scatterometry structure with embedded ring oscillator, and methods of using same |
US6949462B1 (en) | 2002-04-04 | 2005-09-27 | Nanometrics Incorporated | Measuring an alignment target with multiple polarization states |
US6982793B1 (en) | 2002-04-04 | 2006-01-03 | Nanometrics Incorporated | Method and apparatus for using an alignment target with designed in offset |
US7322250B1 (en) * | 2002-04-09 | 2008-01-29 | Rockwell Automation Technologies, Inc. | System and method for sensing torque on a rotating shaft |
TWI273217B (en) * | 2002-04-17 | 2007-02-11 | Accent Optical Tech Inc | Scatterometric measurement of undercut multi-layer diffracting structures |
US6985229B2 (en) * | 2002-05-30 | 2006-01-10 | Agere Systems, Inc. | Overlay metrology using scatterometry profiling |
US7216045B2 (en) | 2002-06-03 | 2007-05-08 | Timbre Technologies, Inc. | Selection of wavelengths for integrated circuit optical metrology |
US6819844B2 (en) * | 2002-06-20 | 2004-11-16 | The Boeing Company | Fiber-optic based surface spectroscopy |
US6947135B2 (en) * | 2002-07-01 | 2005-09-20 | Therma-Wave, Inc. | Reduced multicubic database interpolation method for optical measurement of diffractive microstructures |
US6919964B2 (en) * | 2002-07-09 | 2005-07-19 | Therma-Wave, Inc. | CD metrology analysis using a finite difference method |
US7321433B2 (en) * | 2002-07-12 | 2008-01-22 | Dansk Fundamental Metrologi A/S | Method and apparatus for optically measuring the topography of nearly planar periodic structures |
US7046363B2 (en) * | 2002-09-06 | 2006-05-16 | Infineon Technologies Ag | Optical measurement system and method |
US7869057B2 (en) | 2002-09-09 | 2011-01-11 | Zygo Corporation | Multiple-angle multiple-wavelength interferometer using high-NA imaging and spectral analysis |
US7139081B2 (en) | 2002-09-09 | 2006-11-21 | Zygo Corporation | Interferometry method for ellipsometry, reflectometry, and scatterometry measurements, including characterization of thin film structures |
US6992764B1 (en) | 2002-09-30 | 2006-01-31 | Nanometrics Incorporated | Measuring an alignment target with a single polarization state |
US7136162B1 (en) * | 2002-10-15 | 2006-11-14 | J.A. Woollam Co., Inc. | Alignment of ellipsometer beam to sample surface |
US20040090629A1 (en) * | 2002-11-08 | 2004-05-13 | Emmanuel Drege | Diffraction order selection for optical metrology simulation |
US7193715B2 (en) * | 2002-11-14 | 2007-03-20 | Tokyo Electron Limited | Measurement of overlay using diffraction gratings when overlay exceeds the grating period |
US6867862B2 (en) * | 2002-11-20 | 2005-03-15 | Mehrdad Nikoonahad | System and method for characterizing three-dimensional structures |
US7369233B2 (en) | 2002-11-26 | 2008-05-06 | Kla-Tencor Technologies Corporation | Optical system for measuring samples using short wavelength radiation |
WO2004053426A1 (en) | 2002-12-05 | 2004-06-24 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
US7440105B2 (en) * | 2002-12-05 | 2008-10-21 | Kla-Tencor Technologies Corporation | Continuously varying offset mark and methods of determining overlay |
FR2849181B1 (fr) * | 2002-12-23 | 2005-12-23 | Commissariat Energie Atomique | Procede d'etude des reliefs d'une structure par voie optique |
US7126131B2 (en) * | 2003-01-16 | 2006-10-24 | Metrosol, Inc. | Broad band referencing reflectometer |
US20080246951A1 (en) * | 2007-04-09 | 2008-10-09 | Phillip Walsh | Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work-pieces |
US8564780B2 (en) * | 2003-01-16 | 2013-10-22 | Jordan Valley Semiconductors Ltd. | Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces |
US7352453B2 (en) * | 2003-01-17 | 2008-04-01 | Kla-Tencor Technologies Corporation | Method for process optimization and control by comparison between 2 or more measured scatterometry signals |
DE10302868B4 (de) * | 2003-01-25 | 2008-07-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Bestimmung von Strukturparametern einer Oberfläche mit einem lernfähigen System |
US7069153B2 (en) * | 2003-01-28 | 2006-06-27 | Therma-Wave, Inc. | CD metrology method |
US7072049B2 (en) * | 2003-02-03 | 2006-07-04 | Timbre Technologies, Inc. | Model optimization for structures with additional materials |
US7324214B2 (en) | 2003-03-06 | 2008-01-29 | Zygo Corporation | Interferometer and method for measuring characteristics of optically unresolved surface features |
US7106454B2 (en) | 2003-03-06 | 2006-09-12 | Zygo Corporation | Profiling complex surface structures using scanning interferometry |
US7233390B2 (en) * | 2003-03-31 | 2007-06-19 | Therma-Wave, Inc. | Scatterometry for samples with non-uniform edges |
US7145664B2 (en) * | 2003-04-18 | 2006-12-05 | Therma-Wave, Inc. | Global shape definition method for scatterometry |
US7068363B2 (en) | 2003-06-06 | 2006-06-27 | Kla-Tencor Technologies Corp. | Systems for inspection of patterned or unpatterned wafers and other specimen |
US7463355B1 (en) * | 2003-06-12 | 2008-12-09 | Scientific Computing International | Nondestructive optical technique for simultaneously measuring optical constants and thickness of thin films |
US6891628B2 (en) | 2003-06-25 | 2005-05-10 | N & K Technology, Inc. | Method and apparatus for examining features on semi-transparent and transparent substrates |
US7085676B2 (en) * | 2003-06-27 | 2006-08-01 | Tokyo Electron Limited | Feed forward critical dimension control |
DE10333119B3 (de) * | 2003-07-21 | 2005-05-25 | Infineon Technologies Ag | Nichtinvasives Verfahren zur Charakterisierung und Identifizierung eingebetteter Mikrostrukturen |
US7271921B2 (en) * | 2003-07-23 | 2007-09-18 | Kla-Tencor Technologies Corporation | Method and apparatus for determining surface layer thickness using continuous multi-wavelength surface scanning |
US7430898B1 (en) | 2003-09-04 | 2008-10-07 | Kla-Tencor Technologies Corp. | Methods and systems for analyzing a specimen using atomic force microscopy profiling in combination with an optical technique |
US7289225B2 (en) | 2003-09-15 | 2007-10-30 | Zygo Corporation | Surface profiling using an interference pattern matching template |
US7145654B2 (en) * | 2003-10-01 | 2006-12-05 | Tokyo Electron Limited | Method and apparatus to reduce spotsize in an optical metrology instrument |
SE526617C2 (sv) * | 2003-10-01 | 2005-10-18 | Sick Ivp Ab | System och metod för att avbilda ett objekts egenskaper |
JP3892843B2 (ja) * | 2003-11-04 | 2007-03-14 | 株式会社東芝 | 寸法測定方法、寸法測定装置および測定マーク |
US7256879B2 (en) * | 2003-12-11 | 2007-08-14 | Corning Incorporated | Semiconductor array tester |
US7327457B2 (en) * | 2003-12-19 | 2008-02-05 | N&K Technology, Inc. | Apparatus and method for optical characterization of a sample over a broadband of wavelengths while minimizing polarization changes |
US7248364B2 (en) * | 2003-12-19 | 2007-07-24 | N&K Technology, Inc. | Apparatus and method for optical characterization of a sample over a broadband of wavelengths with a small spot size |
WO2005069082A1 (en) | 2003-12-19 | 2005-07-28 | International Business Machines Corporation | Differential critical dimension and overlay metrology apparatus and measurement method |
JP2010286493A (ja) * | 2004-01-23 | 2010-12-24 | Horiba Ltd | 基板検査装置 |
US7355709B1 (en) | 2004-02-23 | 2008-04-08 | Kla-Tencor Technologies Corp. | Methods and systems for optical and non-optical measurements of a substrate |
JP2007537455A (ja) * | 2004-05-14 | 2007-12-20 | ケイエルエイ−テンコー・テクノロジーズ・コーポレーション | 試験体の測定または分析のためのシステムおよび方法 |
US7359052B2 (en) | 2004-05-14 | 2008-04-15 | Kla-Tencor Technologies Corp. | Systems and methods for measurement of a specimen with vacuum ultraviolet light |
US7564552B2 (en) | 2004-05-14 | 2009-07-21 | Kla-Tencor Technologies Corp. | Systems and methods for measurement of a specimen with vacuum ultraviolet light |
US7067819B2 (en) | 2004-05-14 | 2006-06-27 | Kla-Tencor Technologies Corp. | Systems and methods for measurement or analysis of a specimen using separated spectral peaks in light |
US7349079B2 (en) | 2004-05-14 | 2008-03-25 | Kla-Tencor Technologies Corp. | Methods for measurement or analysis of a nitrogen concentration of a specimen |
IL162199A (en) * | 2004-05-27 | 2008-04-13 | Nova Measuring Instr Ltd | Optical measurements of articles with periodic patterns |
US7202958B1 (en) * | 2004-06-01 | 2007-04-10 | Nanometrics Incorporated | Modeling a sample with an underlying complicated structure |
US7212293B1 (en) | 2004-06-01 | 2007-05-01 | N&K Technology, Inc. | Optical determination of pattern feature parameters using a scalar model having effective optical properties |
US7804059B2 (en) * | 2004-08-11 | 2010-09-28 | Jordan Valley Semiconductors Ltd. | Method and apparatus for accurate calibration of VUV reflectometer |
US20060043291A1 (en) * | 2004-08-26 | 2006-03-02 | Peng Gang G | Electron spectroscopic metrology system |
US7274440B1 (en) * | 2004-09-08 | 2007-09-25 | Kla-Tencor Technologies Corp. | Systems and methods for measuring stress in a specimen |
US7391524B1 (en) | 2004-09-13 | 2008-06-24 | N&K Technology, Inc. | System and method for efficient characterization of diffracting structures with incident plane parallel to grating lines |
US7206070B2 (en) | 2004-11-15 | 2007-04-17 | Therma-Wave, Inc. | Beam profile ellipsometer with rotating compensator |
US7483133B2 (en) * | 2004-12-09 | 2009-01-27 | Kla-Tencor Technologies Corporation. | Multiple angle of incidence spectroscopic scatterometer system |
WO2006069255A2 (en) * | 2004-12-22 | 2006-06-29 | Kla-Tencor Technologies Corp. | Methods and systems for controlling variation in dimensions of patterned features across a wafer |
US20070091325A1 (en) * | 2005-01-07 | 2007-04-26 | Mehrdad Nikoonahad | Multi-channel optical metrology |
US7515253B2 (en) * | 2005-01-12 | 2009-04-07 | Kla-Tencor Technologies Corporation | System for measuring a sample with a layer containing a periodic diffracting structure |
JP4768754B2 (ja) | 2005-01-20 | 2011-09-07 | ザイゴ コーポレーション | オブジェクト表面の特徴を求める干渉計 |
US7884947B2 (en) | 2005-01-20 | 2011-02-08 | Zygo Corporation | Interferometry for determining characteristics of an object surface, with spatially coherent illumination |
US7408641B1 (en) | 2005-02-14 | 2008-08-05 | Kla-Tencor Technologies Corp. | Measurement systems configured to perform measurements of a specimen and illumination subsystems configured to provide illumination for a measurement system |
US7315384B2 (en) * | 2005-05-10 | 2008-01-01 | Asml Netherlands B.V. | Inspection apparatus and method of inspection |
US7330256B1 (en) | 2005-05-16 | 2008-02-12 | N&K Technology, Inc. | Spectrophotometric system with reduced angle of incidence |
DE102005023736B4 (de) | 2005-05-23 | 2019-08-22 | Vistec Semiconductor Systems Jena Gmbh | Verfahren zum Bestimmen von Strukturparametern |
US7277172B2 (en) * | 2005-06-06 | 2007-10-02 | Kla-Tencor Technologies, Corporation | Measuring overlay and profile asymmetry using symmetric and anti-symmetric scatterometry signals |
US7369235B1 (en) | 2005-06-24 | 2008-05-06 | Kla-Tencor Corporation | Method and system for measuring deep trenches in silicon |
WO2007044786A2 (en) | 2005-10-11 | 2007-04-19 | Zygo Corporation | Interferometry method and system including spectral decomposition |
US7430051B2 (en) * | 2005-10-12 | 2008-09-30 | Sematech Inc. | Methods for characterizing semiconductor material using optical metrology |
JP4807659B2 (ja) * | 2006-01-31 | 2011-11-02 | 凸版印刷株式会社 | セル内膜厚測定装置 |
US7747424B2 (en) * | 2006-03-17 | 2010-06-29 | Kla-Tencor Corporation | Scatterometry multi-structure shape definition with multi-periodicity |
US7561282B1 (en) | 2006-03-27 | 2009-07-14 | Kla-Tencor Technologies Corporation | Techniques for determining overlay and critical dimension using a single metrology tool |
JP4990548B2 (ja) * | 2006-04-07 | 2012-08-01 | 株式会社日立製作所 | 半導体装置の製造方法 |
US20090306941A1 (en) * | 2006-05-15 | 2009-12-10 | Michael Kotelyanskii | Structure Model description and use for scatterometry-based semiconductor manufacturing process metrology |
US7623238B1 (en) | 2006-06-07 | 2009-11-24 | J.A. Woollam Co., Inc. | System for and method of reducing change caused by motor vibrations in ellipsometers, polarimeters or the like |
US7469164B2 (en) * | 2006-06-26 | 2008-12-23 | Nanometrics Incorporated | Method and apparatus for process control with in-die metrology |
US7515283B2 (en) * | 2006-07-11 | 2009-04-07 | Tokyo Electron, Ltd. | Parallel profile determination in optical metrology |
US7469192B2 (en) * | 2006-07-11 | 2008-12-23 | Tokyo Electron Ltd. | Parallel profile determination for an optical metrology system |
TWI428559B (zh) | 2006-07-21 | 2014-03-01 | Zygo Corp | 在低同調干涉下系統性效應之補償方法和系統 |
US8139232B2 (en) | 2006-07-27 | 2012-03-20 | Rudolph Technologies, Inc. | Multiple measurement techniques including focused beam scatterometry for characterization of samples |
JP5186129B2 (ja) * | 2006-08-25 | 2013-04-17 | 大日本スクリーン製造株式会社 | 溝パターンの深さの測定方法および測定装置 |
JP5145673B2 (ja) * | 2006-08-30 | 2013-02-20 | 住友電気工業株式会社 | レーザ加工方法およびレーザ加工装置 |
US7630087B2 (en) * | 2006-11-22 | 2009-12-08 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
US20080129986A1 (en) * | 2006-11-30 | 2008-06-05 | Phillip Walsh | Method and apparatus for optically measuring periodic structures using orthogonal azimuthal sample orientations |
EP2097713A4 (en) | 2006-12-22 | 2010-09-15 | Zygo Corp | DEVICE AND METHOD FOR MEASURING SURFACE PROPERTIES |
DE102006062036B4 (de) * | 2006-12-29 | 2017-10-05 | Globalfoundries Inc. | Bewertung von mechanischen Spannungen in Mikrostrukturbauelementen in der Prozesslinie |
US8798966B1 (en) * | 2007-01-03 | 2014-08-05 | Kla-Tencor Corporation | Measuring critical dimensions of a semiconductor structure |
US7596422B2 (en) * | 2007-01-12 | 2009-09-29 | Tokyo Electron Limited | Determining one or more profile parameters of a structure using optical metrology and a correlation between profile models and key profile shape variables |
US7889355B2 (en) | 2007-01-31 | 2011-02-15 | Zygo Corporation | Interferometry for lateral metrology |
TWI416096B (zh) | 2007-07-11 | 2013-11-21 | Nova Measuring Instr Ltd | 用於監控圖案化結構的性質之方法及系統 |
US7716003B1 (en) * | 2007-07-16 | 2010-05-11 | Kla-Tencor Technologies Corporation | Model-based measurement of semiconductor device features with feed forward use of data for dimensionality reduction |
US7619746B2 (en) | 2007-07-19 | 2009-11-17 | Zygo Corporation | Generating model signals for interferometry |
US8699027B2 (en) * | 2007-07-27 | 2014-04-15 | Rudolph Technologies, Inc. | Multiple measurement techniques including focused beam scatterometry for characterization of samples |
US7826072B1 (en) | 2007-08-16 | 2010-11-02 | Kla-Tencor Technologies Corporation | Method for optimizing the configuration of a scatterometry measurement system |
JP4950813B2 (ja) * | 2007-08-30 | 2012-06-13 | 大日本スクリーン製造株式会社 | 分光エリプソメータ、膜厚測定装置および分光エリプソメータのフォーカス調整方法 |
US7838309B1 (en) * | 2007-09-07 | 2010-11-23 | Kla-Tencor Corporation | Measurement and control of strained devices |
NL1036018A1 (nl) * | 2007-10-09 | 2009-04-15 | Asml Netherlands Bv | A method of optimizing a model, a method of measuring a property, a device manufacturing method, a spectrometer and a lithographic apparatus. |
US8072611B2 (en) | 2007-10-12 | 2011-12-06 | Zygo Corporation | Interferometric analysis of under-resolved features |
JP5222954B2 (ja) | 2007-11-13 | 2013-06-26 | ザイゴ コーポレーション | 偏光スキャンを利用した干渉計 |
EP2232195B1 (en) | 2007-12-14 | 2015-03-18 | Zygo Corporation | Analyzing surface structure using scanning interferometry |
DE102007063415B4 (de) * | 2007-12-18 | 2014-12-04 | BAM Bundesanstalt für Materialforschung und -prüfung | Verfahren und Vorrichtung zum Erkennen eines Erzeugnisses |
US9006001B2 (en) * | 2007-12-24 | 2015-04-14 | Texas Instruments Incorporated | Simple scatterometry structure for Si recess etch control |
JP2009162494A (ja) * | 2007-12-28 | 2009-07-23 | Nec Electronics Corp | 計測方法 |
US20090219537A1 (en) * | 2008-02-28 | 2009-09-03 | Phillip Walsh | Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths |
US8126694B2 (en) | 2008-05-02 | 2012-02-28 | Nanometrics Incorporated | Modeling conductive patterns using an effective model |
US20090279172A1 (en) * | 2008-05-12 | 2009-11-12 | Higashi Robert E | Microelectromechanical lamellar grating |
US8090558B1 (en) | 2008-06-09 | 2012-01-03 | Kla-Tencor Corporation | Optical parametric model optimization |
US20100059657A1 (en) * | 2008-09-05 | 2010-03-11 | Nikon Corporation | System and Method Producing Data For Correcting Autofocus Error in An Imaging Optical System |
US8120781B2 (en) | 2008-11-26 | 2012-02-21 | Zygo Corporation | Interferometric systems and methods featuring spectral analysis of unevenly sampled data |
US8195435B2 (en) * | 2008-12-19 | 2012-06-05 | Tokyo Electron Limited | Hybrid diffraction modeling of diffracting structures |
US8125641B2 (en) * | 2009-03-27 | 2012-02-28 | N&K Technology, Inc. | Method and apparatus for phase-compensated sensitivity-enhanced spectroscopy (PCSES) |
US8153987B2 (en) | 2009-05-22 | 2012-04-10 | Jordan Valley Semiconductors Ltd. | Automated calibration methodology for VUV metrology system |
NL2004545A (en) * | 2009-06-09 | 2010-12-13 | Asml Netherlands Bv | Lithographic method and arrangement |
US8441639B2 (en) * | 2009-09-03 | 2013-05-14 | Kla-Tencor Corp. | Metrology systems and methods |
CN102576188B (zh) * | 2009-10-12 | 2014-10-01 | Asml荷兰有限公司 | 用于确定衬底上的对象的近似结构的方法、检验设备以及衬底 |
US8467056B1 (en) * | 2009-11-09 | 2013-06-18 | The United States Of America As Represented By The Secretary Of The Navy | Variable angle, fiber optic coupled, light scattering apparatus |
US9201171B2 (en) * | 2010-08-02 | 2015-12-01 | Dai Nippon Printing Co., Ltd. | Optical layered body, polarizer, and image display device |
US8867041B2 (en) | 2011-01-18 | 2014-10-21 | Jordan Valley Semiconductor Ltd | Optical vacuum ultra-violet wavelength nanoimprint metrology |
US8565379B2 (en) | 2011-03-14 | 2013-10-22 | Jordan Valley Semiconductors Ltd. | Combining X-ray and VUV analysis of thin film layers |
US9442063B2 (en) | 2011-06-27 | 2016-09-13 | Kla-Tencor Corporation | Measurement of composition for thin films |
JP2013032981A (ja) * | 2011-08-02 | 2013-02-14 | Otsuka Denshi Co Ltd | 膜厚測定装置 |
US8468471B2 (en) | 2011-09-23 | 2013-06-18 | Kla-Tencor Corp. | Process aware metrology |
US10346962B2 (en) * | 2012-02-10 | 2019-07-09 | Corning Incorporated | Nondestructive method to predict isostatic strength in ceramic substrates |
CN105549341A (zh) * | 2012-02-21 | 2016-05-04 | Asml荷兰有限公司 | 检查设备和方法 |
US9075566B2 (en) | 2012-03-02 | 2015-07-07 | Microsoft Technoogy Licensing, LLC | Flexible hinge spine |
US9460029B2 (en) | 2012-03-02 | 2016-10-04 | Microsoft Technology Licensing, Llc | Pressure sensitive keys |
US20130242303A1 (en) * | 2012-03-13 | 2013-09-19 | Nanometrics Incorporated | Dual angles of incidence and azimuth angles optical metrology |
WO2013143814A1 (en) | 2012-03-27 | 2013-10-03 | Asml Netherlands B.V. | Metrology method and apparatus, lithographic system and device manufacturing method |
US10354929B2 (en) * | 2012-05-08 | 2019-07-16 | Kla-Tencor Corporation | Measurement recipe optimization based on spectral sensitivity and process variation |
US20130300590A1 (en) | 2012-05-14 | 2013-11-14 | Paul Henry Dietz | Audio Feedback |
US9952140B2 (en) * | 2012-05-29 | 2018-04-24 | Kla-Tencor Corporation | Small spot size spectroscopic ellipsometer |
US9182341B2 (en) | 2012-06-13 | 2015-11-10 | Kla-Tencor Corporation | Optical surface scanning systems and methods |
CN103575662B (zh) * | 2012-08-09 | 2016-05-04 | 北京智朗芯光科技有限公司 | 光学测量系统 |
JP2015534056A (ja) | 2012-09-24 | 2015-11-26 | トルネード スペクトラル システムズ,インコーポレイテッド | 単一検出器アレイを有するオンチップ複数機能分光計 |
US8860937B1 (en) | 2012-10-24 | 2014-10-14 | Kla-Tencor Corp. | Metrology systems and methods for high aspect ratio and large lateral dimension structures |
US8912495B2 (en) | 2012-11-21 | 2014-12-16 | Kla-Tencor Corp. | Multi-spectral defect inspection for 3D wafers |
NL2011816A (en) * | 2012-11-30 | 2014-06-04 | Asml Netherlands Bv | Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method. |
US8994943B2 (en) * | 2012-11-30 | 2015-03-31 | Infineon Technologies Ag | Selectivity by polarization |
CN103323403B (zh) * | 2013-05-27 | 2015-04-15 | 浙江大学 | 一种低辐射镀膜玻璃的光学参数检测方法 |
US10481088B2 (en) | 2013-06-04 | 2019-11-19 | Kla-Tencor Corporation | Automatic determination of fourier harmonic order for computation of spectral information for diffraction structures |
US10079183B2 (en) * | 2013-06-26 | 2018-09-18 | Kla-Tenor Corporation | Calculated electrical performance metrics for process monitoring and yield management |
JP6275834B2 (ja) * | 2013-07-03 | 2018-02-07 | エーエスエムエル ネザーランズ ビー.ブイ. | 検査装置及び方法、リソグラフィ装置、リソグラフィ処理セル並びにデバイス製造方法 |
KR20150085956A (ko) | 2014-01-17 | 2015-07-27 | 삼성전자주식회사 | 반도체 소자의 계측 방법, 반도체 계측 시스템, 및 이들을 이용한 반도체 소자의 제조방법 |
US9546962B2 (en) | 2014-02-12 | 2017-01-17 | Kla-Tencor Corporation | Multi-spot scanning collection optics |
JP6267550B2 (ja) * | 2014-03-12 | 2018-01-24 | キヤノン株式会社 | 測定装置および測定方法 |
WO2015161136A1 (en) | 2014-04-17 | 2015-10-22 | Femtometrix, Inc. | Wafer metrology technologies |
US9494535B2 (en) * | 2014-04-21 | 2016-11-15 | Kla-Tencor Corporation | Scatterometry-based imaging and critical dimension metrology |
JP6035279B2 (ja) | 2014-05-08 | 2016-11-30 | 東京エレクトロン株式会社 | 膜厚測定装置、膜厚測定方法、プログラム及びコンピュータ記憶媒体 |
JP6393397B2 (ja) | 2014-06-30 | 2018-09-19 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置の照射線量決定方法、検査装置およびデバイス製造方法 |
US10151986B2 (en) * | 2014-07-07 | 2018-12-11 | Kla-Tencor Corporation | Signal response metrology based on measurements of proxy structures |
US10324733B2 (en) | 2014-07-30 | 2019-06-18 | Microsoft Technology Licensing, Llc | Shutdown notifications |
US9304235B2 (en) | 2014-07-30 | 2016-04-05 | Microsoft Technology Licensing, Llc | Microfabrication |
US10678412B2 (en) | 2014-07-31 | 2020-06-09 | Microsoft Technology Licensing, Llc | Dynamic joint dividers for application windows |
US9787576B2 (en) | 2014-07-31 | 2017-10-10 | Microsoft Technology Licensing, Llc | Propagating routing awareness for autonomous networks |
US10592080B2 (en) | 2014-07-31 | 2020-03-17 | Microsoft Technology Licensing, Llc | Assisted presentation of application windows |
US10254942B2 (en) | 2014-07-31 | 2019-04-09 | Microsoft Technology Licensing, Llc | Adaptive sizing and positioning of application windows |
KR102544026B1 (ko) | 2014-11-12 | 2023-06-14 | 펨토매트릭스, 인코포레이티드. | 제2고조파 발생(shg) 신호 내에서 재료 특성을 해석하는 시스템 |
US10151634B2 (en) | 2014-11-16 | 2018-12-11 | Ibrahim Abdulhalim | Multi-spectral polarimetric variable optical device and imager |
KR20160066448A (ko) | 2014-12-02 | 2016-06-10 | 삼성전자주식회사 | 표면 검사 방법 |
US10317677B2 (en) | 2015-02-09 | 2019-06-11 | Microsoft Technology Licensing, Llc | Display system |
US10018844B2 (en) | 2015-02-09 | 2018-07-10 | Microsoft Technology Licensing, Llc | Wearable image display system |
US9827209B2 (en) | 2015-02-09 | 2017-11-28 | Microsoft Technology Licensing, Llc | Display system |
US9429692B1 (en) | 2015-02-09 | 2016-08-30 | Microsoft Technology Licensing, Llc | Optical components |
US9372347B1 (en) | 2015-02-09 | 2016-06-21 | Microsoft Technology Licensing, Llc | Display system |
US9535253B2 (en) | 2015-02-09 | 2017-01-03 | Microsoft Technology Licensing, Llc | Display system |
US9423360B1 (en) | 2015-02-09 | 2016-08-23 | Microsoft Technology Licensing, Llc | Optical components |
US11086216B2 (en) | 2015-02-09 | 2021-08-10 | Microsoft Technology Licensing, Llc | Generating electronic components |
US9513480B2 (en) | 2015-02-09 | 2016-12-06 | Microsoft Technology Licensing, Llc | Waveguide |
US9970863B2 (en) * | 2015-02-22 | 2018-05-15 | Kla-Tencor Corporation | Optical metrology with reduced focus error sensitivity |
US20170045355A1 (en) * | 2015-08-12 | 2017-02-16 | Industrial Technology Research Institute | Scattering measurement system and method |
US10094774B2 (en) * | 2015-08-12 | 2018-10-09 | Industrial Technology Research Institute | Scattering measurement system and method |
CN115096826A (zh) | 2015-09-03 | 2022-09-23 | 加州理工学院 | 表征高k介质的光学系统以及方法 |
CN105277500B (zh) * | 2015-12-08 | 2018-05-25 | 上海老盛昌配送有限公司 | 一种苏丹红紫外固化检测装置与方法 |
US10451412B2 (en) | 2016-04-22 | 2019-10-22 | Kla-Tencor Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
US9728470B1 (en) * | 2016-05-10 | 2017-08-08 | Infineon Technologies Austria Ag | Semiconductor structure and methods |
KR20180028787A (ko) * | 2016-09-09 | 2018-03-19 | 삼성전자주식회사 | 디펙 검사 시스템과 방법, 및 그 검사 방법을 이용한 반도체 소자 제조방법 |
TWI716684B (zh) * | 2018-05-09 | 2021-01-21 | 華邦電子股份有限公司 | 臨界尺寸量測方法及用於量測臨界尺寸的影像處理裝置 |
EP3794335A4 (en) | 2018-05-15 | 2022-03-02 | Femtometrix, Inc. | SECOND HARMONIC GENERATION (SHG) OPTICAL INSPECTION SYSTEM DESIGNS |
CN112470256A (zh) * | 2018-07-25 | 2021-03-09 | 诺威量测设备股份有限公司 | 材料表征的光学技术 |
CN108965735B (zh) * | 2018-09-27 | 2023-11-03 | 武汉华星光电技术有限公司 | 对焦补偿的方法及其设备 |
KR102139995B1 (ko) * | 2018-10-24 | 2020-07-31 | 한국표준과학연구원 | 수직입사 및 경사입사 결합형 타원계측기 및 이를 이용한 시편의 광물성 측정 방법 |
CN109405815B (zh) * | 2018-12-05 | 2024-03-19 | 长安大学 | 一种用于隧道内测量周边收敛的快速固定装置及方法 |
US10804167B2 (en) | 2019-01-24 | 2020-10-13 | Kla-Tencor Corporation | Methods and systems for co-located metrology |
US11060982B2 (en) * | 2019-03-17 | 2021-07-13 | Kla Corporation | Multi-dimensional model of optical dispersion |
KR20210032663A (ko) | 2019-09-17 | 2021-03-25 | 삼성전자주식회사 | 웨이퍼 검사 장치 |
JP7083856B2 (ja) * | 2020-01-07 | 2022-06-13 | 日本電子株式会社 | 高さ測定装置、荷電粒子線装置、および高さ測定方法 |
US11939665B2 (en) * | 2020-03-10 | 2024-03-26 | Tokyo Electron Limted | Film thickness measuring apparatus and film thickness measuring method, and film forming system and film forming method |
US20220290974A1 (en) * | 2021-03-11 | 2022-09-15 | Applied Materials Israel Ltd. | Optical metrology models for in-line film thickness measurements |
CN113310907B (zh) * | 2021-06-09 | 2022-07-05 | 华中科技大学 | 一种磁性椭偏测量装置 |
EP4202409A1 (en) * | 2021-12-22 | 2023-06-28 | Munster Technological University | Resonant scattering spectroscopy based wafer scale testing |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08255751A (ja) * | 1995-02-15 | 1996-10-01 | At & T Corp | マイクロサイズ・パターンを特徴づけるための方法および配列 |
JPH08261727A (ja) * | 1994-12-21 | 1996-10-11 | He Holdings Inc Dba Hughes Electron | 厚さ測定装置並びに方法 |
JPH09237812A (ja) * | 1995-12-28 | 1997-09-09 | Fujitsu Ltd | 加工寸法測定方法、半導体装置の製造方法および品質管理方法 |
Family Cites Families (169)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3426201A (en) * | 1965-10-12 | 1969-02-04 | Texas Instruments Inc | Method and apparatus for measuring the thickness of films by means of elliptical polarization of reflected infrared radiation |
US3547074A (en) | 1967-04-13 | 1970-12-15 | Block Engineering | Apparatus for forming microelements |
US3667846A (en) * | 1969-07-28 | 1972-06-06 | Charles Nater | Optical surface inspection apparatus |
US3671126A (en) * | 1970-02-19 | 1972-06-20 | Ati Inc | Noncontacting optical probe |
US4171917A (en) | 1974-07-02 | 1979-10-23 | Centre De Recherches Metallurgiques-Centrum Voor Research In De Metallurgie | Determining the profile of a surface of an object |
US4039370A (en) | 1975-06-23 | 1977-08-02 | Rca Corporation | Optically monitoring the undercutting of a layer being etched |
CA1043463A (en) * | 1975-12-05 | 1978-11-28 | Paul A. Mueller | Lumber inspection and optimization system |
JPS5335567A (en) | 1976-09-13 | 1978-04-03 | Shinetsu Chem Ind Co | Apparatus for measuring thickness of semiconductor wafer |
US4173788A (en) | 1976-09-27 | 1979-11-06 | Atmospheric Sciences, Inc. | Method and apparatus for measuring dimensions |
US4146327A (en) * | 1976-12-27 | 1979-03-27 | Autech | Optical triangulation gauging system |
US4303341A (en) | 1977-12-19 | 1981-12-01 | Rca Corporation | Optically testing the lateral dimensions of a pattern |
US4141780A (en) | 1977-12-19 | 1979-02-27 | Rca Corporation | Optically monitoring the thickness of a depositing layer |
US4200396A (en) | 1977-12-19 | 1980-04-29 | Rca Corporation | Optically testing the lateral dimensions of a pattern |
US5164579A (en) | 1979-04-30 | 1992-11-17 | Diffracto Ltd. | Method and apparatus for electro-optically determining the dimension, location and attitude of objects including light spot centroid determination |
US4373804A (en) | 1979-04-30 | 1983-02-15 | Diffracto Ltd. | Method and apparatus for electro-optically determining the dimension, location and attitude of objects |
US5280179A (en) * | 1979-04-30 | 1994-01-18 | Sensor Adaptive Machines Incorporated | Method and apparatus utilizing an orientation code for automatically guiding a robot |
HU186726B (en) | 1979-06-08 | 1985-09-30 | Energiagazdalkodasi Intezet | Hybrid heat pump |
US4330213A (en) | 1980-02-14 | 1982-05-18 | Rca Corporation | Optical line width measuring apparatus and method |
US5112131A (en) | 1981-02-27 | 1992-05-12 | Diffracto, Ltd. | Controlled machining of combustion chambers, gears and other surfaces |
DE3270551D1 (en) | 1981-03-16 | 1986-05-22 | Energy Conversion Devices Inc | Optical methods for controlling layer thickness |
US4516855A (en) * | 1981-04-03 | 1985-05-14 | International Business Machines Corporation | Method and apparatus for determining the polarization state of a light wave field |
JPS57187604A (en) | 1981-05-14 | 1982-11-18 | Toshiba Corp | Measurement device of profile |
US4408884A (en) | 1981-06-29 | 1983-10-11 | Rca Corporation | Optical measurements of fine line parameters in integrated circuit processes |
JPS58206120A (ja) | 1982-05-26 | 1983-12-01 | Hitachi Ltd | 半導体形成プロセス制御方式 |
JPS5999304A (ja) * | 1982-11-30 | 1984-06-08 | Asahi Optical Co Ltd | 顕微鏡系のレーザ光による比較測長装置 |
JPS59140420A (ja) * | 1983-02-01 | 1984-08-11 | Canon Inc | 半導体レ−ザ−を用いた光源装置 |
SU1146549A1 (ru) | 1983-04-08 | 1985-03-23 | Предприятие П/Я В-2892 | Способ измерени линейного размера элементов топологического рисунка микросхем |
JPH0750664B2 (ja) * | 1983-06-23 | 1995-05-31 | 富士通株式会社 | レチクルの検査方法 |
JPS6033003A (ja) | 1983-08-03 | 1985-02-20 | Hitachi Ltd | 形状測定装置 |
JPS6074528A (ja) | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | レジストパタ−ン検査装置 |
JPS6086843A (ja) | 1983-10-19 | 1985-05-16 | Hitachi Ltd | 偏光解析装置を有する加工装置 |
JPS60128602A (ja) | 1983-12-16 | 1985-07-09 | 株式会社日立製作所 | 多連多回転ボリウム |
USRE33424E (en) | 1983-12-26 | 1990-11-06 | Hitachi, Ltd. | Apparatus and method for measuring the depth of fine engraved patterns |
US4615620A (en) | 1983-12-26 | 1986-10-07 | Hitachi, Ltd. | Apparatus for measuring the depth of fine engraved patterns |
US4672196A (en) * | 1984-02-02 | 1987-06-09 | Canino Lawrence S | Method and apparatus for measuring properties of thin materials using polarized light |
JPS60166808A (ja) | 1984-02-10 | 1985-08-30 | Toshiba Corp | 形状測定装置 |
JPS60236005A (ja) | 1984-05-09 | 1985-11-22 | Nec Corp | 線巾測定方法 |
US4695162A (en) * | 1984-05-24 | 1987-09-22 | Victor Company Of Japan, Ltd. | Film thickness measuring apparatus |
US4653924A (en) * | 1984-06-12 | 1987-03-31 | Victor Company Of Japan, Ltd. | Rotating analyzer type ellipsometer |
JPS614906A (ja) | 1984-06-19 | 1986-01-10 | Nec Corp | 線幅測定方法 |
JPS614905A (ja) | 1984-06-19 | 1986-01-10 | Nec Corp | 線幅測定方法 |
JPS6139852A (ja) | 1984-07-31 | 1986-02-26 | Toshiba Electric Equip Corp | 位相制御回路の保護回路 |
SU1226042A1 (ru) | 1984-08-18 | 1986-04-23 | Предприятие П/Я В-2892 | Способ измерени толщины пленок на подложках |
DE3434575C1 (de) * | 1984-09-20 | 1986-03-13 | Sagax Instrument AB, Sundbyberg | Ellipsometrische Vorrichtung zur Untersuchung der physikalischen Eigenschaften der Oberflaeche einer Probe |
US4687325A (en) * | 1985-03-28 | 1987-08-18 | General Electric Company | Three-dimensional range camera |
US4689491A (en) * | 1985-04-19 | 1987-08-25 | Datasonics Corp. | Semiconductor wafer scanning system |
US4710642A (en) | 1985-08-20 | 1987-12-01 | Mcneil John R | Optical scatterometer having improved sensitivity and bandwidth |
US4668860A (en) * | 1985-10-09 | 1987-05-26 | Optical Coating Laboratory, Inc. | Scattermeter using polarized light to distinguish between bulk and surface scatter |
JPS62150251A (ja) | 1985-12-24 | 1987-07-04 | Nec Corp | デ−タベ−ス型フオトマスク検査装置 |
US5329357A (en) | 1986-03-06 | 1994-07-12 | Sopra-Societe De Production Et De Recherches Appliquees | Spectroscopic ellipsometry apparatus including an optical fiber |
FR2597976B1 (fr) | 1986-04-24 | 1990-11-09 | Tissier Annie | Procede de mesure de parametres caracteristiques d'une couche mince et appareil pour la mise en oeuvre de ce procede |
FR2605100B1 (fr) * | 1986-10-10 | 1988-12-09 | Labo Electronique Physique | Dispositif optique d'eclairement d'un echantillon pour un ellipsometre spectroscopique a haute resolution laterale |
JPH0769154B2 (ja) | 1987-06-10 | 1995-07-26 | 富士写真フイルム株式会社 | レジストパタ−ンの形状計測方法 |
JPS6428509A (en) | 1987-07-23 | 1989-01-31 | Nippon Kokan Kk | Apparatus for measuring thickness of film |
US4905170A (en) | 1987-11-12 | 1990-02-27 | Forouhi Abdul R | Method and apparatus of determining optical constants of amorphous semiconductors and dielectrics |
US5087121A (en) * | 1987-12-01 | 1992-02-11 | Canon Kabushiki Kaisha | Depth/height measuring device |
JPH0663745B2 (ja) | 1988-01-13 | 1994-08-22 | 日本電気株式会社 | 格子周期測定装置 |
FR2628211B1 (fr) * | 1988-03-04 | 1993-05-14 | Vareille Aime | Analyseur par ellipsometrie, procede d'analyse ellipsometrique d'un echantillon et application a la mesure de variation d'epaisseur des couches minces |
US5007708A (en) * | 1988-07-26 | 1991-04-16 | Georgia Tech Research Corporation | Technique for producing antireflection grating surfaces on dielectrics, semiconductors and metals |
US5393624A (en) * | 1988-07-29 | 1995-02-28 | Tokyo Electron Limited | Method and apparatus for manufacturing a semiconductor device |
SU1695145A1 (ru) | 1988-08-03 | 1991-11-30 | Институт Радиотехники И Электроники Ан Ссср | Эллипсометр |
US4964726A (en) | 1988-09-27 | 1990-10-23 | General Electric Company | Apparatus and method for optical dimension measurement using interference of scattered electromagnetic energy |
NL8802920A (nl) | 1988-11-28 | 1990-06-18 | Hoogovens Groep Bv | Laagdiktemeter. |
US4991971A (en) * | 1989-02-13 | 1991-02-12 | United Technologies Corporation | Fiber optic scatterometer for measuring optical surface roughness |
US5076696A (en) * | 1989-03-16 | 1991-12-31 | The Johns Hopkins University | Dynamic imaging microellipsometry |
DE3914631A1 (de) | 1989-05-03 | 1990-11-08 | Basf Ag | Verfahren zur untersuchung der physikalischen eigenschaften duenner schichten |
US5042951A (en) * | 1989-09-19 | 1991-08-27 | Therma-Wave, Inc. | High resolution ellipsometric apparatus |
US4999014A (en) * | 1989-05-04 | 1991-03-12 | Therma-Wave, Inc. | Method and apparatus for measuring thickness of thin films |
DD289541A5 (de) | 1989-08-04 | 1991-05-02 | ��@�K@�������������@�K@��������������@��������k�� | Verfahren zur herstellung von 11beta-aryl-16 alpha, 17 alph-cyclohexanoestra-4,9-dienen |
JP3187827B2 (ja) | 1989-12-20 | 2001-07-16 | 株式会社日立製作所 | パターン検査方法および装置 |
US5166752A (en) * | 1990-01-11 | 1992-11-24 | Rudolph Research Corporation | Simultaneous multiple angle/multiple wavelength ellipsometer and method |
DE4105192C2 (de) | 1990-02-26 | 1996-07-04 | Stefan Oelckers | Verfahren zum Bestimmen von Oberflächenrauhigkeiten und dergleichen |
JPH0424541A (ja) | 1990-05-21 | 1992-01-28 | Mitsui Mining & Smelting Co Ltd | 内部欠陥測定方法および装置 |
US5091320A (en) * | 1990-06-15 | 1992-02-25 | Bell Communications Research, Inc. | Ellipsometric control of material growth |
US5241369A (en) | 1990-10-01 | 1993-08-31 | Mcneil John R | Two-dimensional optical scatterometer apparatus and process |
US5114233A (en) | 1990-10-09 | 1992-05-19 | At&T Bell Laboratories | Method for inspecting etched workpieces |
US5032734A (en) * | 1990-10-15 | 1991-07-16 | Vti, Inc. | Method and apparatus for nondestructively measuring micro defects in materials |
US5411760A (en) * | 1990-11-16 | 1995-05-02 | Cal-West Equipment Company, Inc. | Protective coating and method of using such coating |
JP2927934B2 (ja) * | 1990-11-16 | 1999-07-28 | 株式会社リコー | 薄膜測定方法および装置 |
IL96483A (en) | 1990-11-27 | 1995-07-31 | Orbotech Ltd | Optical inspection method and apparatus |
EP0527230B1 (en) * | 1991-01-30 | 1996-06-05 | Nkk Corporation | Ellipsometer |
US5164790A (en) | 1991-02-27 | 1992-11-17 | Mcneil John R | Simple CD measurement of periodic structures on photomasks |
US5674652A (en) | 1991-02-28 | 1997-10-07 | University Of New Mexico | Diffracted light from latent images in photoresist for exposure control |
DE4108329C2 (de) | 1991-03-14 | 1993-10-14 | Plasmos Gmbh Prozesstechnik | Verfahren zum Bestimmen von Materialparametern, nämlich Dicke, Brechungsindex und Absorptionskoeffizient, einzelner Schichten |
JP3323537B2 (ja) | 1991-07-09 | 2002-09-09 | キヤノン株式会社 | 微細構造評価装置及び微細構造評価法 |
US5337146A (en) * | 1992-03-30 | 1994-08-09 | University Of New Orleans | Diffraction-grating photopolarimeters and spectrophotopolarimeters |
US5486919A (en) * | 1992-04-27 | 1996-01-23 | Canon Kabushiki Kaisha | Inspection method and apparatus for inspecting a particle, if any, on a substrate having a pattern |
US5313044A (en) * | 1992-04-28 | 1994-05-17 | Duke University | Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor |
US5386317A (en) * | 1992-05-13 | 1995-01-31 | Prometrix Corporation | Method and apparatus for imaging dense linewidth features using an optical microscope |
US5747813A (en) * | 1992-06-16 | 1998-05-05 | Kla-Tencop. Corporation | Broadband microspectro-reflectometer |
US5494829A (en) * | 1992-07-31 | 1996-02-27 | Biostar, Inc. | Devices and methods for detection of an analyte based upon light interference |
US5337150A (en) * | 1992-08-04 | 1994-08-09 | Hughes Aircraft Company | Apparatus and method for performing thin film layer thickness metrology using a correlation reflectometer |
US5361137A (en) | 1992-08-31 | 1994-11-01 | Texas Instruments Incorporated | Process control for submicron linewidth measurement |
US5504582A (en) * | 1992-09-18 | 1996-04-02 | J. A. Woollam Co. Inc. | System and method for compensating polarization-dependent sensitivity of dispersive optics in a rotating analyzer ellipsometer system |
US5521706A (en) * | 1992-09-18 | 1996-05-28 | J. A. Woollam Co. Inc. | System and method for compensating polarization-dependent sensitivity of dispersive optics in a rotating analyzer ellipsometer system |
US5666201A (en) * | 1992-09-18 | 1997-09-09 | J.A. Woollam Co. Inc. | Multiple order dispersive optics system and method of use |
US5519793A (en) * | 1992-11-05 | 1996-05-21 | The United States Of America As Represented By The Secretary Of The Interior | Apparatus and method for computer vision measurements |
US5365340A (en) * | 1992-12-10 | 1994-11-15 | Hughes Aircraft Company | Apparatus and method for measuring the thickness of thin films |
DE4301889A1 (de) * | 1993-01-14 | 1994-07-21 | Sentech Instr Gmbh | Verfahren zum Bestimmen charakteristischer Größen transparenter Schichten mit Hilfe der Ellipsometrie |
IL104708A (en) | 1993-02-12 | 1995-12-31 | Orbotech Ltd | Device and method for optical inspection of items |
US5432607A (en) * | 1993-02-22 | 1995-07-11 | International Business Machines Corporation | Method and apparatus for inspecting patterned thin films using diffracted beam ellipsometry |
US5381233A (en) | 1993-03-03 | 1995-01-10 | National Tsing Hua University | Polarized-light scatterometer for measuring the thickness of a film coated on the partial of a substrate |
DE69421844T2 (de) * | 1993-04-23 | 2000-06-29 | Japan Res Dev Corp | Verfahren zur Kontrolle der Schichtdicke und/oder des Brechungsindexes |
US5408322A (en) * | 1993-04-26 | 1995-04-18 | Materials Research Corporation | Self aligning in-situ ellipsometer and method of using for process monitoring |
US5399229A (en) * | 1993-05-13 | 1995-03-21 | Texas Instruments Incorporated | System and method for monitoring and evaluating semiconductor wafer fabrication |
US5412473A (en) * | 1993-07-16 | 1995-05-02 | Therma-Wave, Inc. | Multiple angle spectroscopic analyzer utilizing interferometric and ellipsometric devices |
US5355212A (en) | 1993-07-19 | 1994-10-11 | Tencor Instruments | Process for inspecting patterned wafers |
US5416594A (en) | 1993-07-20 | 1995-05-16 | Tencor Instruments | Surface scanner with thin film gauge |
US5363171A (en) | 1993-07-29 | 1994-11-08 | The United States Of America As Represented By The Director, National Security Agency | Photolithography exposure tool and method for in situ photoresist measurments and exposure control |
US5503707A (en) * | 1993-09-22 | 1996-04-02 | Texas Instruments Incorporated | Method and apparatus for process endpoint prediction based on actual thickness measurements |
US5625453A (en) * | 1993-10-26 | 1997-04-29 | Canon Kabushiki Kaisha | System and method for detecting the relative positional deviation between diffraction gratings and for measuring the width of a line constituting a diffraction grating |
IL107549A (en) * | 1993-11-09 | 1996-01-31 | Nova Measuring Instr Ltd | Device for measuring the thickness of thin films |
US5494697A (en) * | 1993-11-15 | 1996-02-27 | At&T Corp. | Process for fabricating a device using an ellipsometric technique |
US5555472A (en) | 1993-12-22 | 1996-09-10 | Integrated Process Equipment Corp. | Method and apparatus for measuring film thickness in multilayer thin film stack by comparison to a reference library of theoretical signatures |
GB9326247D0 (en) | 1993-12-23 | 1994-02-23 | British Petroleum Co Plc | Method of determining thickness of coating |
JPH07181438A (ja) * | 1993-12-24 | 1995-07-21 | Sharp Corp | 液晶表示装置及びその欠陥修正方法 |
US5666199A (en) * | 1994-07-11 | 1997-09-09 | Phillips Petroleum Company | Apparatus and process for detecting the presence of gel defects in oriented sheets or films based on polarization detection |
US5604581A (en) * | 1994-10-07 | 1997-02-18 | On-Line Technologies, Inc. | Film thickness and free carrier concentration analysis method and apparatus |
US5774222A (en) * | 1994-10-07 | 1998-06-30 | Hitachi, Ltd. | Manufacturing method of semiconductor substrative and method and apparatus for inspecting defects of patterns on an object to be inspected |
JPH10507833A (ja) * | 1994-10-21 | 1998-07-28 | サーマ−ウェイブ・インク | 分光偏光解析装置 |
US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
FR2731074B1 (fr) | 1995-02-27 | 1997-05-16 | Instruments Sa | Procede de mesure ellipsometrique, ellipsometre et dispositif de controle d'elaboration de couches les mettant en oeuvre |
US6118525A (en) | 1995-03-06 | 2000-09-12 | Ade Optical Systems Corporation | Wafer inspection system for distinguishing pits and particles |
WO1996029583A1 (en) * | 1995-03-20 | 1996-09-26 | Kansas State University Research Foundation | Ellipsometric microscope |
US5777744A (en) * | 1995-05-16 | 1998-07-07 | Canon Kabushiki Kaisha | Exposure state detecting system and exposure apparatus using the same |
US5625455A (en) * | 1995-06-06 | 1997-04-29 | Board Of Regents, The University Of Texas System | Rotating analyzer ellipsometer and ellipsometry technique |
FR2737572B1 (fr) * | 1995-08-03 | 1997-10-24 | Centre Nat Rech Scient | Ellipsometre multi-detecteurs et procede de mesure ellipsometrique multi-detecteurs |
US5703692A (en) | 1995-08-03 | 1997-12-30 | Bio-Rad Laboratories, Inc. | Lens scatterometer system employing source light beam scanning means |
US5638178A (en) * | 1995-09-01 | 1997-06-10 | Phase Metrics | Imaging polarimeter detector for measurement of small spacings |
US5739909A (en) | 1995-10-10 | 1998-04-14 | Lucent Technologies Inc. | Measurement and control of linewidths in periodic structures using spectroscopic ellipsometry |
US5835221A (en) * | 1995-10-16 | 1998-11-10 | Lucent Technologies Inc. | Process for fabricating a device using polarized light to determine film thickness |
US5835220A (en) | 1995-10-27 | 1998-11-10 | Nkk Corporation | Method and apparatus for detecting surface flaws |
US5654903A (en) * | 1995-11-07 | 1997-08-05 | Lucent Technologies Inc. | Method and apparatus for real time monitoring of wafer attributes in a plasma etch process |
US6104486A (en) * | 1995-12-28 | 2000-08-15 | Fujitsu Limited | Fabrication process of a semiconductor device using ellipsometry |
US5825498A (en) * | 1996-02-05 | 1998-10-20 | Micron Technology, Inc. | Ultraviolet light reflectance method for evaluating the surface characteristics of opaque materials |
US5982496A (en) | 1996-03-11 | 1999-11-09 | Vlsi Technology, Inc. | Thin film thickness and optimal focus measuring using reflectivity |
US5805290A (en) * | 1996-05-02 | 1998-09-08 | International Business Machines Corporation | Method of optical metrology of unresolved pattern arrays |
JP3602646B2 (ja) | 1996-05-21 | 2004-12-15 | 株式会社日立製作所 | 試料の寸法測定装置 |
US5880838A (en) * | 1996-06-05 | 1999-03-09 | California Institute Of California | System and method for optically measuring a structure |
US6594012B2 (en) * | 1996-07-05 | 2003-07-15 | Canon Kabushiki Kaisha | Exposure apparatus |
US5923423A (en) | 1996-09-12 | 1999-07-13 | Sentec Corporation | Heterodyne scatterometer for detecting and analyzing wafer surface defects |
US5956148A (en) * | 1996-12-20 | 1999-09-21 | Texas Instruments Incorporated | Semiconductor surface measurement system and method |
US5867276A (en) | 1997-03-07 | 1999-02-02 | Bio-Rad Laboratories, Inc. | Method for broad wavelength scatterometry |
US6278519B1 (en) * | 1998-01-29 | 2001-08-21 | Therma-Wave, Inc. | Apparatus for analyzing multi-layer thin film stacks on semiconductors |
US6031615A (en) * | 1997-09-22 | 2000-02-29 | Candela Instruments | System and method for simultaneously measuring lubricant thickness and degradation, thin film thickness and wear, and surface roughness |
US5963329A (en) | 1997-10-31 | 1999-10-05 | International Business Machines Corporation | Method and apparatus for measuring the profile of small repeating lines |
US6483580B1 (en) | 1998-03-06 | 2002-11-19 | Kla-Tencor Technologies Corporation | Spectroscopic scatterometer system |
US6476920B1 (en) | 1998-03-18 | 2002-11-05 | Nova Measuring Instruments, Ltd. | Method and apparatus for measurements of patterned structures |
US6836324B2 (en) | 1998-03-18 | 2004-12-28 | Nova Measuring Instruments Ltd. | Method and apparatus for measurements of patterned structures |
IL123727A (en) * | 1998-03-18 | 2002-05-23 | Nova Measuring Instr Ltd | Method and apparatus for measurement of patterned structures |
US5917594A (en) * | 1998-04-08 | 1999-06-29 | Kla-Tencor Corporation | Spectroscopic measurement system using an off-axis spherical mirror and refractive elements |
US6271047B1 (en) * | 1998-05-21 | 2001-08-07 | Nikon Corporation | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same |
WO2000035002A1 (de) | 1998-12-04 | 2000-06-15 | Semiconductor 300 Gmbh & Co. Kg | Verfahren und vorrichtung zur optischen kontrolle von fertigungsprozessen feinstrukturierter oberflächen in der halbleiterfertigung |
IL130874A (en) * | 1999-07-09 | 2002-12-01 | Nova Measuring Instr Ltd | System and method for measuring pattern structures |
US6525818B1 (en) | 2000-02-08 | 2003-02-25 | Infineon Technologies Ag | Overlay alignment system using polarization schemes |
US6982792B1 (en) * | 2000-03-21 | 2006-01-03 | J.A. Woollam Co. Inc | Spectrophotometer, ellipsometer, polarimeter and the like systems |
US6429943B1 (en) * | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
US6603542B1 (en) * | 2000-06-14 | 2003-08-05 | Qc Optics, Inc. | High sensitivity optical inspection system and method for detecting flaws on a diffractive surface |
US7317531B2 (en) | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
US6728663B2 (en) * | 2000-09-13 | 2004-04-27 | Accent Optical Technologies, Inc. | Structure identification using scattering signatures |
US7099005B1 (en) | 2000-09-27 | 2006-08-29 | Kla-Tencor Technologies Corporation | System for scatterometric measurements and applications |
US6678043B1 (en) * | 2000-10-31 | 2004-01-13 | Gerard H. Vurens | Methods and apparatus for surface analysis |
US6900892B2 (en) * | 2000-12-19 | 2005-05-31 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
US6819426B2 (en) | 2001-02-12 | 2004-11-16 | Therma-Wave, Inc. | Overlay alignment metrology using diffraction gratings |
US6614540B1 (en) | 2001-06-28 | 2003-09-02 | Advanced Micro Devices, Inc. | Method and apparatus for determining feature characteristics using scatterometry |
AU2002360738A1 (en) * | 2001-12-19 | 2003-07-09 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
KR100689743B1 (ko) | 2004-10-01 | 2007-03-08 | 삼성전자주식회사 | 저잡음 증폭기의 정전기 보호 및 입력 임피던스 정합 회로및 저잡음 증폭기 |
US7515253B2 (en) * | 2005-01-12 | 2009-04-07 | Kla-Tencor Technologies Corporation | System for measuring a sample with a layer containing a periodic diffracting structure |
US7372579B2 (en) * | 2006-04-20 | 2008-05-13 | Infineon Technologies, Ag | Apparatus and method for monitoring trench profiles and for spectrometrologic analysis |
-
1998
- 1998-03-06 US US09/036,557 patent/US6483580B1/en not_active Expired - Lifetime
-
1999
- 1999-02-25 JP JP2000534831A patent/JP4633254B2/ja not_active Expired - Lifetime
- 1999-02-25 DE DE69922942T patent/DE69922942T2/de not_active Expired - Lifetime
- 1999-02-25 EP EP04078145.2A patent/EP1508772B1/en not_active Expired - Lifetime
- 1999-02-25 AU AU33109/99A patent/AU3310999A/en not_active Abandoned
- 1999-02-25 WO PCT/US1999/004053 patent/WO1999045340A1/en active IP Right Grant
- 1999-02-25 EP EP99937981A patent/EP1073876B1/en not_active Expired - Lifetime
-
2001
- 2001-09-21 US US09/960,898 patent/US6590656B2/en not_active Expired - Lifetime
-
2002
- 2002-09-20 US US10/251,246 patent/US7173699B2/en not_active Expired - Lifetime
-
2006
- 2006-12-21 US US11/614,315 patent/US7859659B2/en not_active Expired - Fee Related
-
2009
- 2009-10-23 JP JP2009244176A patent/JP5249169B2/ja not_active Expired - Lifetime
- 2009-10-23 JP JP2009244175A patent/JP5563803B2/ja not_active Expired - Lifetime
- 2009-10-23 JP JP2009244069A patent/JP4643737B2/ja not_active Expired - Lifetime
- 2009-12-18 US US12/642,670 patent/US7898661B2/en not_active Expired - Fee Related
-
2010
- 2010-06-08 JP JP2010131079A patent/JP5102329B2/ja not_active Expired - Lifetime
- 2010-12-07 US US12/962,503 patent/US20110125458A1/en not_active Abandoned
-
2012
- 2012-12-07 JP JP2012267965A patent/JP2013083659A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08261727A (ja) * | 1994-12-21 | 1996-10-11 | He Holdings Inc Dba Hughes Electron | 厚さ測定装置並びに方法 |
JPH08255751A (ja) * | 1995-02-15 | 1996-10-01 | At & T Corp | マイクロサイズ・パターンを特徴づけるための方法および配列 |
JPH09237812A (ja) * | 1995-12-28 | 1997-09-09 | Fujitsu Ltd | 加工寸法測定方法、半導体装置の製造方法および品質管理方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013525813A (ja) * | 2010-05-06 | 2013-06-20 | ケーエルエー−テンカー コーポレイション | 構造体の光学測定のための物質の光学的特性の決定方法 |
JP2022547214A (ja) * | 2019-09-13 | 2022-11-10 | アプライド マテリアルズ インコーポレイテッド | 測定システムおよびグレーティングパターンアレイ |
Also Published As
Publication number | Publication date |
---|---|
US20020033945A1 (en) | 2002-03-21 |
JP2010281822A (ja) | 2010-12-16 |
US20100165340A1 (en) | 2010-07-01 |
JP5102329B2 (ja) | 2012-12-19 |
EP1508772B1 (en) | 2013-08-21 |
JP5249169B2 (ja) | 2013-07-31 |
EP1508772A1 (en) | 2005-02-23 |
JP4633254B2 (ja) | 2011-02-16 |
JP2010133942A (ja) | 2010-06-17 |
US6483580B1 (en) | 2002-11-19 |
US6590656B2 (en) | 2003-07-08 |
US7859659B2 (en) | 2010-12-28 |
DE69922942D1 (de) | 2005-02-03 |
AU3310999A (en) | 1999-09-20 |
JP5563803B2 (ja) | 2014-07-30 |
JP2013083659A (ja) | 2013-05-09 |
EP1073876A1 (en) | 2001-02-07 |
US7898661B2 (en) | 2011-03-01 |
US7173699B2 (en) | 2007-02-06 |
US20030058443A1 (en) | 2003-03-27 |
US20070091327A1 (en) | 2007-04-26 |
EP1073876B1 (en) | 2004-12-29 |
JP4643737B2 (ja) | 2011-03-02 |
DE69922942T2 (de) | 2006-03-30 |
WO1999045340A1 (en) | 1999-09-10 |
JP2002506198A (ja) | 2002-02-26 |
JP2010133941A (ja) | 2010-06-17 |
US20110125458A1 (en) | 2011-05-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4643737B2 (ja) | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 | |
US7301649B2 (en) | System for scatterometric measurements and applications | |
US7826071B2 (en) | Parametric profiling using optical spectroscopic systems | |
KR101342410B1 (ko) | 주기적인 회절 구조를 포함하는 층을 갖는 샘플을 측정하는시스템 | |
US7312881B2 (en) | Parametric profiling using optical spectroscopic systems to adjust processing parameter | |
US6940592B2 (en) | Calibration as well as measurement on the same workpiece during fabrication | |
US20130245985A1 (en) | Calibration Of An Optical Metrology System For Critical Dimension Application Matching | |
US7202958B1 (en) | Modeling a sample with an underlying complicated structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100608 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A132 Effective date: 20100629 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100929 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101109 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101202 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131210 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |