JP2010062242A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2010062242A JP2010062242A JP2008224538A JP2008224538A JP2010062242A JP 2010062242 A JP2010062242 A JP 2010062242A JP 2008224538 A JP2008224538 A JP 2008224538A JP 2008224538 A JP2008224538 A JP 2008224538A JP 2010062242 A JP2010062242 A JP 2010062242A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】本発明の実施の形態による半導体装置の製造方法は、半導体素子を有する半導体基板上に、内部に配線が設けられた層間犠牲膜、および前記層間犠牲膜上に位置する絶縁膜を形成する工程と、前記絶縁膜および前記層間犠牲膜にエッチングを施し、前記層間犠牲膜に達する溝を形成する工程と、前記溝内にガス透過性膜を形成する工程と、前記層間犠牲膜をガス化させ、前記溝および前記ガス透過性膜を通して除去する工程と、前記層間犠牲膜を除去した後、前記ガス透過性膜上に、前記溝の開口部近傍を封止する封止膜を形成する工程と、を含む。
【選択図】図1B
Description
図1A(a)〜(c)、図1B(d)、(e)は、本発明の第1の実施の形態に係る半導体装置の製造方法を表す断面図である。
本発明の第1の実施の形態によれば、ガス透過性膜9を土台として封止膜11を形成するため、溝8の開口部近傍をほぼ完全に塞ぎ、エアギャップ10a、10bを封止することができる。これにより、エアギャップ内への水分や上層の絶縁部材の材料の侵入を防ぎ、半導体装置の動作信頼性の劣化や電気容量の増加を抑えることができる。
本発明の第2の実施の形態は、ガス透過性膜9の形状において第1の実施の形態と異なる。なお、第1の実施の形態と同様の点については説明を省略または簡略化する。
本発明の第2の実施の形態によれば、ガス透過性膜9の材料や成膜方法の問題により、溝8内に隙間なくガス透過性膜9を埋め込むことができない場合であっても、第1の実施の形態と同様に、エアギャップ内への水分や上層の絶縁部材の材料の侵入を防ぎ、半導体装置の動作信頼性の劣化や電気容量の増加を抑えることができる。
本発明の第3の実施の形態は、ガス透過性膜9の形成位置において第1の実施の形態と異なる。なお、第1の実施の形態と同様の点については説明を省略または簡略化する。
本発明の第3の実施の形態によれば、犠牲膜12を土台としてガス透過性膜9を形成するため、ガス透過性膜9の溝8の開口部近傍への埋め込みが容易になる。そのため、被覆性のよくない膜をガス透過性膜9として用いる場合に特に有効である。
なお、上記各実施の形態は一実施の形態に過ぎず、本発明はこれらに限定されずに、発明の主旨を逸脱しない範囲内において種々変形実施が可能である。
Claims (5)
- 半導体素子を有する半導体基板上に、内部に配線が設けられた層間犠牲膜、および前記層間犠牲膜上に位置する絶縁膜を形成する工程と、
前記絶縁膜および前記層間犠牲膜にエッチングを施し、前記層間犠牲膜に達する溝を形成する工程と、
前記溝内にガス透過性膜を形成する工程と、
前記層間犠牲膜をガス化させ、前記溝および前記ガス透過性膜を通して除去する工程と、
前記層間犠牲膜を除去した後、前記ガス透過性膜上に、前記溝の開口部近傍を封止する封止膜を形成する工程と、
を含む半導体装置の製造方法。 - 前記溝内に犠牲膜を形成した後、前記ガス透過性膜を前記溝内の前記犠牲膜上に積層形成し、
前記犠牲膜をガス化させ、前記溝および前記ガス透過性膜を通して除去した後、前記層間犠牲膜をガス化させ、前記溝および前記ガス透過性膜を通して除去する、
請求項1に記載の半導体装置の製造方法。 - 前記ガス透過性膜を内部に空隙を含むように形成する、
請求項1に記載の半導体装置の製造方法。 - 前記層間犠牲膜をケミカルドライエッチング、または熱分解法によりガス化する、
請求項1〜3のいずれか1つに記載の半導体装置の製造方法。 - 前記犠牲膜をケミカルドライエッチング、紫外線照射、または熱分解法によりガス化する、
請求項2に記載の半導体装置の製造方法。
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JP2008224538A JP4929254B2 (ja) | 2008-09-02 | 2008-09-02 | 半導体装置の製造方法 |
US12/536,631 US7781301B2 (en) | 2008-09-02 | 2009-08-06 | Method of fabricating semiconductor device |
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JP2008224538A JP4929254B2 (ja) | 2008-09-02 | 2008-09-02 | 半導体装置の製造方法 |
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JP2010062242A true JP2010062242A (ja) | 2010-03-18 |
JP4929254B2 JP4929254B2 (ja) | 2012-05-09 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012059966A (ja) * | 2010-09-09 | 2012-03-22 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
WO2018037667A1 (ja) * | 2016-08-25 | 2018-03-01 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、撮像装置、および半導体装置の製造方法 |
Families Citing this family (5)
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US8765573B2 (en) | 2010-09-20 | 2014-07-01 | Applied Materials, Inc. | Air gap formation |
US8921235B2 (en) | 2013-03-04 | 2014-12-30 | Applied Materials, Inc. | Controlled air gap formation |
CN107680953B (zh) * | 2017-11-09 | 2023-12-08 | 长鑫存储技术有限公司 | 金属内连线的互连结构及其形成方法、半导体器件 |
DE112019003245T5 (de) * | 2018-06-27 | 2021-04-08 | Sony Semiconductor Solutions Corporation | Halbleitervorrichtung und verfahren zur herstellung einer halbleitervorrichtung |
CN109166820B (zh) * | 2018-08-28 | 2020-01-24 | 武汉新芯集成电路制造有限公司 | 半导体器件制作方法以及半导体器件 |
Citations (3)
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JP2006352124A (ja) * | 2005-06-13 | 2006-12-28 | Infineon Technologies Ag | 半導体デバイスおよびその構造体の製造方法 |
JP2007027734A (ja) * | 2005-07-12 | 2007-02-01 | Stmicroelectronics (Crolles 2) Sas | 相互接続エアキャビティの集積化制御および信頼性向上 |
JP2008166726A (ja) * | 2006-12-06 | 2008-07-17 | Toshiba Corp | 半導体装置、およびその製造方法 |
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JPH0521617A (ja) | 1991-07-12 | 1993-01-29 | Fujitsu Ltd | 半導体装置の製造方法 |
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US6734094B2 (en) * | 2002-04-29 | 2004-05-11 | Intel Corporation | Method of forming an air gap within a structure by exposing an ultraviolet sensitive material to ultraviolet radiation |
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US7071091B2 (en) * | 2004-04-20 | 2006-07-04 | Intel Corporation | Method of forming air gaps in a dielectric material using a sacrificial film |
US7294568B2 (en) * | 2004-08-20 | 2007-11-13 | Intel Corporation | Formation of air gaps in an interconnect structure using a thin permeable hard mask and resulting structures |
TW200721379A (en) * | 2005-07-08 | 2007-06-01 | St Microelectronics Crolles 2 | Controlling lateral distribution of air gaps in interconnects |
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- 2008-09-02 JP JP2008224538A patent/JP4929254B2/ja not_active Expired - Fee Related
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Patent Citations (3)
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JP2006352124A (ja) * | 2005-06-13 | 2006-12-28 | Infineon Technologies Ag | 半導体デバイスおよびその構造体の製造方法 |
JP2007027734A (ja) * | 2005-07-12 | 2007-02-01 | Stmicroelectronics (Crolles 2) Sas | 相互接続エアキャビティの集積化制御および信頼性向上 |
JP2008166726A (ja) * | 2006-12-06 | 2008-07-17 | Toshiba Corp | 半導体装置、およびその製造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012059966A (ja) * | 2010-09-09 | 2012-03-22 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
WO2018037667A1 (ja) * | 2016-08-25 | 2018-03-01 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、撮像装置、および半導体装置の製造方法 |
KR20190040934A (ko) * | 2016-08-25 | 2019-04-19 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 반도체 장치, 촬상 장치, 및 반도체 장치의 제조 방법 |
JPWO2018037667A1 (ja) * | 2016-08-25 | 2019-06-20 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、撮像装置、および半導体装置の製造方法 |
US10910416B2 (en) | 2016-08-25 | 2021-02-02 | Sony Semiconductor Solutions Corporation | Semiconductor device, image pickup device, and method for manufacturing semiconductor device |
KR102423309B1 (ko) * | 2016-08-25 | 2022-07-21 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 반도체 장치, 촬상 장치, 및 반도체 장치의 제조 방법 |
KR20220104273A (ko) * | 2016-08-25 | 2022-07-26 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 반도체 장치, 촬상 장치, 및 반도체 장치의 제조 방법 |
US11621283B2 (en) | 2016-08-25 | 2023-04-04 | Sony Semiconductor Solutions Corporation | Semiconductor device, image pickup device, and method for manufacturing semiconductor device |
KR102539779B1 (ko) | 2016-08-25 | 2023-06-07 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 반도체 장치, 촬상 장치, 및 반도체 장치의 제조 방법 |
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US7781301B2 (en) | 2010-08-24 |
US20100055893A1 (en) | 2010-03-04 |
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