JP2010021447A - 成膜方法及び処理システム - Google Patents
成膜方法及び処理システム Download PDFInfo
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- JP2010021447A JP2010021447A JP2008182062A JP2008182062A JP2010021447A JP 2010021447 A JP2010021447 A JP 2010021447A JP 2008182062 A JP2008182062 A JP 2008182062A JP 2008182062 A JP2008182062 A JP 2008182062A JP 2010021447 A JP2010021447 A JP 2010021447A
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- Prior art keywords
- film
- film forming
- forming method
- transition metal
- gas
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H—ELECTRICITY
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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Abstract
【解決手段】真空引き可能になされた処理容器132内で、表面に凹部2を有する被処理体Wの表面に成膜処理を施す成膜方法において、遷移金属含有原料ガスを用いて熱処理により遷移金属含有膜210を形成する遷移金属含有膜形成工程と、元素周期表のVIII族の元素を含む金属膜212を形成する金属膜形成工程とを有するようにする。これにより、例えばCu膜に対するバリヤ性及び密着性を高く維持する。
【選択図】図7
Description
請求項3の発明は、請求項2の発明において、前記熱処理は、前記原料ガスと還元ガスとを用いる熱CVD法であることを特徴とする。
請求項7の発明は、請求項1乃至3のいずれか一項に記載の発明において、前記金属膜形成工程では、スパッタ法により成膜が行われることを特徴とする。
請求項10の発明は、請求項8の発明において、前記埋め込み工程は、メッキ法により行うことを特徴とする。
請求項11の発明は、請求項8の発明において、前記埋め込み工程は、スパッタ法により行うことを特徴とする。
請求項15の発明は、請求項14の発明において、前記遷移金属含有原料は、有機金属材料、或いは金属錯体材料よりなることを特徴とする。
請求項18の発明は、請求項1乃至17のいずれか一項に記載の発明において、前記VIII族の元素は、Fe、Co、Ni、Ru、Rh、Pd、Os、Ir、Ptよりなる群から選択される1以上の元素であることを特徴とする。
請求項22に係る発明は、請求項20記載の処理システムを用いて請求項1乃至18のいずれか一項に記載の成膜方法を実施するように制御するコンピュータに読み取り可能なプログラムを記憶することを特徴とする記憶媒体である。
請求項23に係る発明は、請求項1乃至18のいずれか一項に記載の成膜方法によって形成された膜構造を有することを特徴とする半導体装置である。
請求項24に係る発明は、請求項1乃至18のいずれか一項に記載の成膜方法によって形成された膜構造を有することを特徴とする電子機器である。
被処理体の表面に薄膜を形成する成膜方法において、遷移金属を含む遷移金属含有原料ガスを用いて熱処理により遷移金属含有膜を形成する遷移金属含有膜形成工程と、元素周期表のVIII族の元素を含む金属膜を形成する金属膜形成工程とを行って遷移金属含有膜と金属膜との積層構造としたので、例えばこの積層構造上に形成される例えばCu膜に対するバリヤ性及び密着性を高く維持することができる。
<処理システム>
まず、本発明の成膜方法を実施するための処理システムについて説明する。図1は本発明の処理システムの第1実施形態を示す概略構成図、図2は本発明の処理システムの第2実施形態を示す概略構成図である。
前述したように、第1の処理装置12Aは一般的な洗浄処理装置なので、その説明は省略し、上記第2の処理装置12Bについて説明する。図3は第2の処理装置の一例を示す構成図である。この第2の処理装置12Bは、遷移金属含有原料ガスを用いて熱処理によりウエハ表面に遷移金属含有膜を形成する装置であり、ここでは遷移金属含有膜としてMnOx(X:任意の正数)を形成する場合を例にとって説明する。
次に、上記第3の処理装置12Cについて説明する。尚、前述したように、第4の処理装置12Dは一般的な熱成膜処理装置なので、その説明は省略する。図4は第3の処理装置の一例を示す構成図である。この第3の処理装置12Cは、ウエハ表面にVIII族の元素を含む金属膜を形成する装置であり、ここでは金属膜としてRu膜を形成する場合を例にとって説明する。
次に、上記第5の処理装置12E(図2参照)について説明する。図5は第5の処理装置の一例を示す構成図である。尚、図3及び図4に示す構成部分と同一構成部分については同一参照符号を付してその説明を省略する。
次に、図1乃至図5に示したような処理システムや処理装置を用いて行われる本発明の成膜方法について具体的に説明する。図6は半導体ウエハの凹部を中心とした各工程における薄膜の堆積状況の一例を示す図、図7は本発明方法の基本的な各工程を示すフローチャート、図8は埋め込み工程を実施するための各種態様を示す図、図9は金属膜形成工程を実施する時の各ガスの供給状態を示すタイミングチャート、図10はMnとRuとを含む混合層を形成する時の各ガスの供給状態を示すタイミングチャート、図11はシード膜を形成した時の凹部の最終的な埋め込み状態を示す断面図、図12は半導体ウエハの凹部の底部において埋め込み金属と配線層とが直接接続された状態を示す断面図、図13はMnとRuとを含む混合層を形成した時の凹部の最終的な埋め込み状態を示す断面図である。
尚、上記各実施形態では、VIII族の元素としてRuを用いた場合を例にとって説明したが、これに限定されず、他のZZ族の元素、例えばFe、Co、Ni、Rh、Pd、Os、Ir、Ptとよりなる群から選択される1つ或いはこれらの合金も用いることができる。
2 凹部
3 配線層
10 処理装置
12A,12B,12C,12D,12E 処理装置
14 共通搬送室
18 導入側搬送室
20 搬送機構
34 システム制御部
36 記憶媒体
40 処理容器
42 シャワーヘッド部(ガス導入手段)
62 加熱手段
88 遷移金属含有原料ガス供給系
90 酸素含有ガス供給系
100 水蒸気源
120 還元ガス源
122 制御部
124 記憶媒体
132 処理容器
134 シャワーヘッド部(ガス導入手段)
184 原料ガス供給系
192 第2の原料タンク
206 制御部
208 記憶媒体
210 遷移金属含有膜(MnOx膜)
212 金属膜(Ru膜)
214 バリヤ層
216 埋め込み金属(Cu)
218 シード膜
222 混合膜
W 半導体ウエハ(被処理体)
Claims (24)
- 真空引き可能になされた処理容器内で、表面に凹部を有する被処理体の表面に成膜処理を施す成膜方法において、
遷移金属含有原料ガスを用いて熱処理により遷移金属含有膜を形成する遷移金属含有膜形成工程と、
元素周期表のVIII族の元素を含む金属膜を形成する金属膜形成工程と、
を有することを特徴とする成膜方法。 - 前記熱処理は、CVD(Chemical Vapor Deposition)法であることを特徴とする請求項1記載の成膜方法。
- 前記熱処理は、前記原料ガスと還元ガスとを用いる熱CVD法であることを特徴とする請求項2記載の成膜方法。
- 前記金属膜形成工程では、熱処理が行われることを特徴とする請求項1乃至3のいずれか一項に記載の成膜方法。
- 前記熱処理は、CVD法であることを特徴とする請求項4記載の成膜方法。
- 前記遷移金属含有膜形成工程と前記金属膜形成工程とは同一の処理容器内で連続的に行われ、
前記両工程の移行時には前記遷移金属含有原料ガスの供給量を次第に減少させつつ前記VIII族の元素を含むVIII族原料ガスの供給量を次第に増加させるようにして前記遷移金属と前記VIII族の元素とを含む混合層を形成するようにしたことを特徴とする請求項1乃至5のいずれか一項に記載の成膜方法。 - 前記金属膜形成工程では、スパッタ法により成膜が行われることを特徴とする請求項1乃至3のいずれか一項に記載の成膜方法。
- 前記金属膜形成工程の後に、銅膜を堆積して前記凹部内に埋め込む埋め込み工程を行うことを特徴とする請求項1乃至7のいずれか一項に記載の成膜方法。
- 前記埋め込み工程は、CVD法により行うことを特徴とする請求項8記載の成膜方法。
- 前記埋め込み工程は、メッキ法により行うことを特徴とする請求項8記載の成膜方法。
- 前記埋め込み工程は、スパッタ法により行うことを特徴とする請求項8記載の成膜方法。
- 前記埋め込み工程の後に、前記被処理体をアニールするアニール工程を行うことを特徴とする請求項8乃至11のいずれか一項に記載の成膜方法。
- 前記薄膜の下地膜は、SiO2 膜とSiOF膜とSiC膜とSiN膜とSiOC膜とSiCOH膜とSiCN膜とポーラスシリカ膜とポーラスメチルシルセスキオキサン膜とポリアリレン膜とSiLK(登録商標)膜とフロロカーボン膜とよりなる群から選択される1つ以上の膜よりなることを特徴とする請求項1乃至12のいずれか一項に記載の成膜方法。
- 前記凹部の下部には、配線層が形成されていることを特徴とする請求項1乃至13のいずれか一項に記載の成膜方法。
- 前記遷移金属含有原料は、有機金属材料、或いは金属錯体材料よりなることを特徴とする請求項1乃至14のいずれか一項に記載の成膜方法。
- 前記遷移金属は、マンガン(Mn)よりなり、該マンガンを含む有機金属材料は、Cp2 Mn[=Mn(C5 H5 )2 ]、(MeCp)2 Mn[=Mn(CH3 C5 H4 )2 ]、(EtCp)2 Mn[=Mn(C2 H5 C5 H4 )2 ]、(i−PrCp)2 Mn[=Mn(C3 H7 C5 H4 )2 ]、MeCpMn(CO)3 [=(CH3C5H4)Mn(CO)3 ]、(t−BuCp)2 Mn[=Mn(C4 H9 C5 H4 )2 ]、CH3 Mn(CO)5 、Mn(DPM)3 [=Mn(C11H19O2 )3 ]、Mn(DMPD)(EtCp)[=Mn(C7 H11C2 H5 C5 H4 )]、Mn(acac)2 [=Mn(C5 H7 O2 )2 ]、Mn(DPM)2[=Mn(C11H19O2)2]、Mn(acac)3[=Mn(C5H7O2)3]、Mn(hfac)2[=Mn(C5HF6O2)3]、((CH3)5Cp)2Mn[=Mn((CH3)5C5H4)2]よりなる群から選択される1以上の材料であることを特徴とする請求項15記載の成膜方法。
- 前記熱処理ではプラズマが併用されることを特徴とする請求項1乃至16のいずれか一項に記載の成膜方法。
- 前記VIII族の元素は、Fe、Co、Ni、Ru、Rh、Pd、Os、Ir、Ptよりなる群から選択される1以上の元素であることを特徴とする請求項1乃至17のいずれか一項に記載の成膜方法。
- 被処理体の処理システムにおいて、
前記被処理体の表面に遷移金属を含む遷移金属含有原料ガスを用いて熱処理により遷移金属含有膜を形成する処理装置と、
前記被処理体の表面に元素周期表のVIII族の原素を含む金属膜を形成する処理装置と、
前記被処理体の表面に、銅膜を形成する処理装置と、
前記各装置が連結された共通搬送室と、
前記共通搬送室内に設けられて、前記各処理装置内へ前記被処理体を搬送するための搬送機構と、
請求項1乃至18のいずれか一項に記載の成膜方法を実施するように処理システム全体を制御するシステム制御部と、
を備えたことを特徴とする処理システム。 - 被処理体の処理システムにおいて、
前記被処理体の表面に、遷移金属含有原料ガスを用いて熱処理により遷移金属含有膜を形成する成膜処理と、元素周期表のVIII族の原素を含む金属膜を形成する成膜処理とを行う処理装置と、
前記被処理体の表面に、銅膜を形成する処理装置と、
前記各処理装置が連結された共通搬送室と、
前記共通搬送室内に設けられて、前記各処理装置内へ前記被処理体を搬送するための搬送機構と、
請求項1乃至18のいずれか一項に記載の成膜方法を実施するように処理システム全体を制御するシステム制御部と、
を備えたことを特徴とする処理システム。 - 請求項19記載の処理システムを用いて請求項1乃至18のいずれか一項に記載の成膜方法を実施するように制御するコンピュータに読み取り可能なプログラムを記憶することを特徴とする記憶媒体。
- 請求項20記載の処理システムを用いて請求項1乃至18のいずれか一項に記載の成膜方法を実施するように制御するコンピュータに読み取り可能なプログラムを記憶することを特徴とする記憶媒体。
- 請求項1乃至18のいずれか一項に記載の成膜方法によって形成された膜構造を有することを特徴とする半導体装置。
- 請求項1乃至18のいずれか一項に記載の成膜方法によって形成された膜構造を有することを特徴とする電子機器。
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JP2012169590A (ja) * | 2011-01-27 | 2012-09-06 | Tokyo Electron Ltd | Cu配線の形成方法およびCu膜の成膜方法、ならびに成膜システム |
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KR20160111333A (ko) | 2015-03-16 | 2016-09-26 | 도쿄엘렉트론가부시키가이샤 | 구리 배선의 제조 방법 |
KR20180068328A (ko) | 2015-03-16 | 2018-06-21 | 도쿄엘렉트론가부시키가이샤 | 구리 배선의 제조 방법 |
US10096548B2 (en) | 2015-03-16 | 2018-10-09 | Tokyo Electron Limited | Method of manufacturing Cu wiring |
KR20170026165A (ko) | 2015-08-31 | 2017-03-08 | 도쿄엘렉트론가부시키가이샤 | 반도체 장치의 제조 방법 및 기억 매체 |
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US9892965B2 (en) | 2016-01-27 | 2018-02-13 | Tokyo Electron Limited | Cu wiring manufacturing method and Cu wiring manufacturing system |
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CN102077325B (zh) | 2013-11-06 |
CN102077325A (zh) | 2011-05-25 |
KR20110017916A (ko) | 2011-02-22 |
WO2010004998A1 (ja) | 2010-01-14 |
KR101214704B1 (ko) | 2012-12-21 |
JP5417754B2 (ja) | 2014-02-19 |
US20110163451A1 (en) | 2011-07-07 |
US8440563B2 (en) | 2013-05-14 |
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