JP2009544854A - 誘電体バリア放電を利用したプラズマ表面処理 - Google Patents
誘電体バリア放電を利用したプラズマ表面処理 Download PDFInfo
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Abstract
Description
(i)プラズマガスをトーチに供給するための第1注入口と、(ii)微粒子粉末材料をトーチに供給するための第2注入口と、(iii)微粒子粉末材料を処理するための放電チャンバであり、外表面に配置された電極構造を備えた反応チャンバと、
を含む誘電体バリア放電トーチと、
表面処理された粒子を回収する手段と、
を含み、
プラズマ形成ガスが放電チャンバを通過することでプラズマ放電が生成され、前記プラズマ放電により粒子の表面特性のインフライト修飾が起こる装置である。
一実施形態において、本発明の誘電体バリア放電トーチと接続して使用した電力供給は、3DTSOFTAL(ポリダイン1コロナ発生装置)コロナ発生装置であった。以下の表1に電力供給の主な特徴をまとめる。
本発明の誘電体バリア放電トーチの動作条件は粉末の性質、所望の表面処理、所望の被覆、表面処理材料(モノマー)によって変化してよい。適用する被膜の厚さを制御するために表面処理材料の残留時間を制御することが必須である。以下の表2に代表的な動作条件をまとめる。
被覆された粉末の走査型電子顕微鏡(SEM)写真を示す(図10、11、18−20、22、23)。被覆された粉末の粉末比表面積等の物理特性(“Brauner Emmett Teller”BET法を使用して測定した)も示す。被覆工程の間に粉末の表面に加えた炭素の量に関するX線光電子分光(XPS)結果を表にした。本分析により存在する元素濃度(%)(原子組成)の正確な定量分析が可能となる。さらに、エネルギー分散スペクトル(EDS)マッピング結果を示しており、粉末表面の被覆位置に関する情報を提供する(図21、24)。最後に、熱重量分析(TGA)結果を示し、粉末に堆積した被覆(ポリマー)の量に関する定量的情報を提供する(図25、26)。
12、14、22、24、32、34、36、41、42、43、44、45、46、54、56、77、78、128 電極
16、26、38、49、52、72、79、80、94、96、126 石英管又はセラミック管
18 環状領域
28、39、48 円筒形空間
57 環状放電ギャップ
58 注入管
59 トーチ本体
60 開口部
62 粉末回収チャンバ
64、98、106、112、132、136、138、144 注入ポート
71 ステンレス鋼シリンダー
74、76 水出入口
92 上流モジュール
102 下流モジュール
104 チャンバ
108、110、114、134、150 ポート
122 上流区域
124、142 シェル電極モジュール
130 ポリマーマトリックス複合材料
140 下流区域
Claims (26)
- 粉末粒子の表面処理方法であり、
a)微粒子粉末材料を誘電体バリア放電トーチアセンブリに供給する段階と、
b)誘電体バリア放電トーチにおいて粒子の表面特性をインフライト修飾し、表面処理された粒子を製造する段階と、
c)表面処理された粒子を回収する段階と、
を含む方法。 - (b)が、粒子表面のプラズマ放電との反応を含む請求項1に記載の方法。
- (b)が、被覆材料前駆体の誘電体バリア放電トーチアセンブリへの注入を利用して被覆材料を製造し、前記被覆材料を粒子の表面に堆積させて被覆された粒子を製造することを含む請求項1に記載の方法。
- 誘電体バリア放電トーチアセンブリを大気圧又は低真空条件で作動する請求項2又は3に記載の方法。
- 粉末粒子をマイクロ粒子、ナノ粒子、及びそれらの混合物からなるグループから選択する請求項4に記載の方法。
- 粉末粒子をポリマー粒子、金属粒子、金属酸化物粒子、及びそれらの混合物からなるグループから選択する請求項5に記載の方法。
- 被覆された粒子が、ポリマー、有機、無機、金属、酸化物、窒化物、及びカーバイドからなるグループから選択する被覆を含む請求項3に記載の方法。
- 前記被覆材料前駆体がプラズマ重合を経るモノマーを含む請求項3に記載の方法。
- 前記モノマーを、アセチレン、エチレン、イソプレン、ヘキサメチルジシロキサン、テトラエチルオキシシラン、テトラエチルオキシシリカン、ジエチルジメチルシロキサン、1,3−ブタジエン、スチレン、メタクリル酸メチル、テトラフルオロエチレン、メタン、エタン、プロパン、ブタン、ペンタン、ヘキサン、シクロヘキサン、アセチレン、エチレン、プロピレン、ベンゼン、イソプレン、ヘキサメチルジシロキサン、テトラエチルオキシシラン、テトラエチルオキシシリカン、ジエチルジメチルシロキサン、1,3−ブタジエン、スチレン、メタクリル酸メチル、テトラフルオロエチレン、ピロール、シクロヘキサン、1−ヘキサン、アリルアミン、アセチルアセトン、エチレンオキシド、メタクリル酸グリシジル、アセトニトリル、テトラヒドロフラン、酢酸エチル、無水酢酸、アミノプロピルトリメトキシシラン、アミノプロピルトリエトキシシラン、トリエトキシビニルシラン、1オクタノール、アクリル酸、フェロセン、コバルトセン、シクロオクタテトラエン鉄トリカルボニル、メチルシクロペンタジエニル鉄ジカルボニル、ジシクロペンタジエニル鉄ジカルボニル二量体、シクロペンタジエニルコバルトコバルトアセチルアセトナート、ニッケルアセチルアセトナート、ジメチル−(2,4−ペンタン−ジオナト)金(III)、ニッケルカルボニル、鉄カルボニル、スズアセチルアセトナート、インジウムアセチルアセトナート、インジウムテトラメチルへプタンジオナートからなるグループから選択する請求項8に記載の方法。
- 粉末粒子をインフライト表面処理する装置であり、前記装置は、
前記トーチにプラズマガスを供給する第1注入口と、
前記トーチに微粒子粉末材料を供給する第2注入口と、
前記微粒子粉末材料を処理する放電チャンバであり、その外表面に配置された電極構造を備えた前記反応チャンバと、
を備えた誘電体バリア放電トーチと、
表面処理された粒子を回収する手段と、
を備え、プラズマ形成ガスが前記放電チャンバを通過することによってプラズマ放電が生成し、前記プラズマ放電が粒子の表面特性をインフライト修飾する装置。 - 前記表面処理が粒子表面のプラズマ放電との反応を含む請求項10に記載の装置。
- 被覆材料前駆体を誘電体バリア放電トーチへと供給する手段と、
前記被覆材料前駆体を反応させて被覆材料を提供し、前記粒子を被覆する手段と、
を備えた請求項10に記載の装置。 - 誘電体バリア放電トーチを大気圧又は低真空条件で作動する請求項11又は12に記載の装置。
- 粉末粒子をマイクロ粒子と、ナノ粒子と、それらの混合物と、からなるグループから選択する請求項10に記載の装置。
- 電極構造がシェル電極を含む請求項13に記載の装置。
- 電極構造が少なくとも二つのシェル電極を含み、前記シェル電極を互いに交互に配置した請求項13に記載の装置。
- 電極構造が少なくとも二つのシェル電極を含み、前記シェル電極を互いに一列に配置した請求項13に記載の装置。
- 電極構造が同心電極を含む請求項13に記載の装置。
- 放電チャンバが誘電管を備えた請求項13に記載の装置。
- 誘電管が石英管を含む請求項18に記載の装置。
- 誘電管がセラミック管を含む請求項18に記載の装置。
- 電極構造が、金属板と、金属箔と、金属ワイヤメッシュと、金属塗料と、からなるグループから選択する材料を含む請求項13、14、又は15のいずれか一項に記載の装置。
- 前記第1注入口と第2注入口とが共通である請求項10に記載の装置。
- 前記第1注入口と第2注入口とが異なる供給を定義する請求項10に記載の装置。
- 粉末粒子のインフライト表面処理のための請求項10で定義した誘電体バリア放電トーチアセンブリの使用。
- 請求項10で定義した誘電体バリア放電トーチアセンブリを利用して製造した表面処理された粒子。
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Application Number | Priority Date | Filing Date | Title |
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US83416606P | 2006-07-31 | 2006-07-31 | |
US60/834,166 | 2006-07-31 | ||
US83640306P | 2006-08-09 | 2006-08-09 | |
US60/836,403 | 2006-08-09 | ||
PCT/CA2007/001349 WO2008014607A1 (en) | 2006-07-31 | 2007-07-31 | Plasma surface treatment using dielectric barrier discharges |
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JP2009544854A true JP2009544854A (ja) | 2009-12-17 |
JP5260515B2 JP5260515B2 (ja) | 2013-08-14 |
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US (1) | US8263178B2 (ja) |
EP (1) | EP2052097B1 (ja) |
JP (1) | JP5260515B2 (ja) |
KR (1) | KR101428679B1 (ja) |
CN (1) | CN101573467B (ja) |
CA (1) | CA2659298C (ja) |
DE (1) | DE07785015T1 (ja) |
RU (1) | RU2462534C2 (ja) |
WO (1) | WO2008014607A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010029831A (ja) * | 2008-07-31 | 2010-02-12 | Nakamura Sangyo Gakuen | 粉体のプラズマ処理方法 |
JP2014503683A (ja) * | 2010-11-18 | 2014-02-13 | フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー.ファオ | 基材の接合方法およびそれにより得られる複合構造体 |
CN102325422A (zh) * | 2011-09-13 | 2012-01-18 | 青岛佳明测控仪器有限公司 | 平板型全密封低温等离子体激发源 |
CN102361531A (zh) * | 2011-10-26 | 2012-02-22 | 西安电子科技大学 | 大面积均匀非磁化等离子体产生装置及方法 |
JP2013144766A (ja) * | 2011-12-16 | 2013-07-25 | Meiritsu Component Kk | 表面改質剤 |
JP2017091708A (ja) * | 2015-11-06 | 2017-05-25 | エア・ウォーター株式会社 | 大気圧プラズマ処理装置 |
JP2021120947A (ja) * | 2019-12-02 | 2021-08-19 | アルファ株式会社 | プラズマ処理装置及びプラズマトーチ |
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DE07785015T1 (de) | 2009-11-26 |
EP2052097A4 (en) | 2010-10-20 |
RU2009107047A (ru) | 2010-09-10 |
EP2052097A1 (en) | 2009-04-29 |
CN101573467A (zh) | 2009-11-04 |
US20080145553A1 (en) | 2008-06-19 |
EP2052097B1 (en) | 2016-12-07 |
CA2659298A1 (en) | 2008-02-07 |
CA2659298C (en) | 2012-03-06 |
WO2008014607A1 (en) | 2008-02-07 |
KR20090047503A (ko) | 2009-05-12 |
WO2008014607A8 (en) | 2008-04-24 |
KR101428679B1 (ko) | 2014-08-08 |
US8263178B2 (en) | 2012-09-11 |
JP5260515B2 (ja) | 2013-08-14 |
CN101573467B (zh) | 2012-11-28 |
RU2462534C2 (ru) | 2012-09-27 |
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