JP2009543339A5 - - Google Patents

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Publication number
JP2009543339A5
JP2009543339A5 JP2009518165A JP2009518165A JP2009543339A5 JP 2009543339 A5 JP2009543339 A5 JP 2009543339A5 JP 2009518165 A JP2009518165 A JP 2009518165A JP 2009518165 A JP2009518165 A JP 2009518165A JP 2009543339 A5 JP2009543339 A5 JP 2009543339A5
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JP
Japan
Prior art keywords
catalyst
dielectric material
bound
iii
dielectric constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2009518165A
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English (en)
Japanese (ja)
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JP2009543339A (ja
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Publication date
Priority claimed from US11/475,206 external-priority patent/US7807219B2/en
Application filed filed Critical
Publication of JP2009543339A publication Critical patent/JP2009543339A/ja
Publication of JP2009543339A5 publication Critical patent/JP2009543339A5/ja
Ceased legal-status Critical Current

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JP2009518165A 2006-06-27 2007-06-21 エッチング損傷を受けた低誘電率の誘電材料（ｌｏｗ−ｋｄｉｅｌｅｃｔｒｉｃｍａｔｅｒｉａｌｓ）を修復し且つその強度を回復する方法 Ceased JP2009543339A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/475,206 US7807219B2 (en) 2006-06-27 2006-06-27 Repairing and restoring strength of etch-damaged low-k dielectric materials
PCT/US2007/014435 WO2008002443A1 (en) 2006-06-27 2007-06-21 Repairing and restoring strength of etch-damaged low-k dielectric materials

Publications (2)

Publication Number Publication Date
JP2009543339A JP2009543339A (ja) 2009-12-03
JP2009543339A5 true JP2009543339A5 (https=) 2010-07-29

Family

ID=38845944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009518165A Ceased JP2009543339A (ja) 2006-06-27 2007-06-21 エッチング損傷を受けた低誘電率の誘電材料（ｌｏｗ−ｋｄｉｅｌｅｃｔｒｉｃｍａｔｅｒｉａｌｓ）を修復し且つその強度を回復する方法

Country Status (8)

Country Link
US (1) US7807219B2 (https=)
JP (1) JP2009543339A (https=)
KR (1) KR101392647B1 (https=)
CN (1) CN101479830B (https=)
MY (1) MY146528A (https=)
SG (1) SG173321A1 (https=)
TW (1) TWI424497B (https=)
WO (1) WO2008002443A1 (https=)

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US8841866B2 (en) 2008-05-22 2014-09-23 Vladimir Yegorovich Balakin Charged particle beam extraction method and apparatus used in conjunction with a charged particle cancer therapy system
US8896239B2 (en) 2008-05-22 2014-11-25 Vladimir Yegorovich Balakin Charged particle beam injection method and apparatus used in conjunction with a charged particle cancer therapy system
EP2283713B1 (en) 2008-05-22 2018-03-28 Vladimir Yegorovich Balakin Multi-axis charged particle cancer therapy apparatus
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US9627608B2 (en) * 2014-09-11 2017-04-18 Lam Research Corporation Dielectric repair for emerging memory devices
CN104841405A (zh) * 2015-05-08 2015-08-19 武汉科奥美萃生物科技有限公司 一种高效液相色谱反相键合相的超/亚临界流体封端方法
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KR102733881B1 (ko) 2016-09-12 2024-11-27 삼성전자주식회사 배선 구조체를 갖는 반도체 소자
SG11202005938SA (en) * 2018-01-05 2020-07-29 Fujifilm Electronic Materials Usa Inc Surface treatment compositions and methods
KR102480348B1 (ko) * 2018-03-15 2022-12-23 삼성전자주식회사 실리콘게르마늄 식각 전의 전처리 조성물 및 이를 이용한 반도체 장치의 제조 방법
KR20240083661A (ko) 2022-12-05 2024-06-12 윤소정 노크식 돌돌이 쓰레받기

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