MY146528A - Repairing and restoring strength of etch-damaged low-k dielectric materials - Google Patents

Repairing and restoring strength of etch-damaged low-k dielectric materials

Info

Publication number
MY146528A
MY146528A MYPI20085122A MYPI20085122A MY146528A MY 146528 A MY146528 A MY 146528A MY PI20085122 A MYPI20085122 A MY PI20085122A MY PI20085122 A MYPI20085122 A MY PI20085122A MY 146528 A MY146528 A MY 146528A
Authority
MY
Malaysia
Prior art keywords
bound
catalyst
silanol groups
silane
repairing
Prior art date
Application number
MYPI20085122A
Other languages
English (en)
Inventor
Deyoung James
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of MY146528A publication Critical patent/MY146528A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/185—Processes for applying liquids or other fluent materials performed by dipping applying monomolecular layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2401/00—Form of the coating product, e.g. solution, water dispersion, powders or the like
    • B05D2401/90—Form of the coating product, e.g. solution, water dispersion, powders or the like at least one component of the composition being in supercritical state or close to supercritical state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/005—Repairing damaged coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Insulating Materials (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
MYPI20085122A 2006-06-27 2007-06-21 Repairing and restoring strength of etch-damaged low-k dielectric materials MY146528A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/475,206 US7807219B2 (en) 2006-06-27 2006-06-27 Repairing and restoring strength of etch-damaged low-k dielectric materials

Publications (1)

Publication Number Publication Date
MY146528A true MY146528A (en) 2012-08-15

Family

ID=38845944

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20085122A MY146528A (en) 2006-06-27 2007-06-21 Repairing and restoring strength of etch-damaged low-k dielectric materials

Country Status (8)

Country Link
US (1) US7807219B2 (https=)
JP (1) JP2009543339A (https=)
KR (1) KR101392647B1 (https=)
CN (1) CN101479830B (https=)
MY (1) MY146528A (https=)
SG (1) SG173321A1 (https=)
TW (1) TWI424497B (https=)
WO (1) WO2008002443A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4884180B2 (ja) * 2006-11-21 2012-02-29 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP5132244B2 (ja) * 2007-10-18 2013-01-30 大陽日酸株式会社 絶縁膜のダメージ回復方法および回復剤
US7998875B2 (en) * 2007-12-19 2011-08-16 Lam Research Corporation Vapor phase repair and pore sealing of low-K dielectric materials
WO2009085672A2 (en) 2007-12-21 2009-07-09 Lam Research Corporation Fabrication of a silicon structure and deep silicon etch with profile control
JP5322152B2 (ja) * 2008-03-25 2013-10-23 日本カーリット株式会社 シリコン化合物の製造方法
US8896239B2 (en) 2008-05-22 2014-11-25 Vladimir Yegorovich Balakin Charged particle beam injection method and apparatus used in conjunction with a charged particle cancer therapy system
WO2009142549A2 (en) 2008-05-22 2009-11-26 Vladimir Yegorovich Balakin Multi-axis charged particle cancer therapy method and apparatus
WO2010101489A1 (en) 2009-03-04 2010-09-10 Zakrytoe Aktsionernoe Obshchestvo Protom Multi-field charged particle cancer therapy method and apparatus
EP2283711B1 (en) 2008-05-22 2018-07-11 Vladimir Yegorovich Balakin Charged particle beam acceleration apparatus as part of a charged particle cancer therapy system
EP2283705B1 (en) 2008-05-22 2017-12-13 Vladimir Yegorovich Balakin Charged particle beam extraction apparatus used in conjunction with a charged particle cancer therapy system
US8173547B2 (en) * 2008-10-23 2012-05-08 Lam Research Corporation Silicon etch with passivation using plasma enhanced oxidation
US20110097904A1 (en) * 2009-10-22 2011-04-28 Lam Research Corporation Method for repairing low-k dielectric damage
US7981699B2 (en) * 2009-10-22 2011-07-19 Lam Research Corporation Method for tunably repairing low-k dielectric damage
EP2732035A2 (en) 2011-07-15 2014-05-21 Sarepta Therapeutics, Inc. Methods and compositions for manipulating translation of protein isoforms from alternative initiation start sites
US9627608B2 (en) * 2014-09-11 2017-04-18 Lam Research Corporation Dielectric repair for emerging memory devices
CN104841405A (zh) * 2015-05-08 2015-08-19 武汉科奥美萃生物科技有限公司 一种高效液相色谱反相键合相的超/亚临界流体封端方法
US9763322B2 (en) 2016-01-19 2017-09-12 Industrial Technology Research Institute Flexible substrate repair structure, manufacturing method thereof, and inspection and repair method of flexible substrate
KR102733881B1 (ko) 2016-09-12 2024-11-27 삼성전자주식회사 배선 구조체를 갖는 반도체 소자
EP3735325A4 (en) * 2018-01-05 2021-03-03 FUJIFILM Electronic Materials U.S.A, Inc. SURFACE TREATMENT COMPOSITIONS AND PROCEDURES
KR102480348B1 (ko) * 2018-03-15 2022-12-23 삼성전자주식회사 실리콘게르마늄 식각 전의 전처리 조성물 및 이를 이용한 반도체 장치의 제조 방법
KR20240083661A (ko) 2022-12-05 2024-06-12 윤소정 노크식 돌돌이 쓰레받기

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722698B2 (ja) * 1990-11-16 1995-03-15 日本電装株式会社 脱臭用活性炭及びその製造方法
DE69429335T2 (de) * 1994-03-31 2002-08-22 Sivento Inc., Parsippany Verfahren zur Herstellung stabiler wässriger Silan-Zusammensetzungen
US5998541A (en) * 1995-06-14 1999-12-07 Matsushita Electric Industrial Co., Ltd. Finishing agents and method of using the same
JPH08337654A (ja) * 1995-06-14 1996-12-24 Matsushita Electric Ind Co Ltd 化学吸着膜の製造方法及びこれに用いる化学吸着液
US6200943B1 (en) * 1998-05-28 2001-03-13 Micell Technologies, Inc. Combination surfactant systems for use in carbon dioxide-based cleaning formulations
US6037275A (en) * 1998-08-27 2000-03-14 Alliedsignal Inc. Nanoporous silica via combined stream deposition
US6277203B1 (en) * 1998-09-29 2001-08-21 Lam Research Corporation Method and apparatus for cleaning low K dielectric and metal wafer surfaces
US6531224B1 (en) * 1999-03-19 2003-03-11 Battelle Memorial Institute Self-assembled monolayer and method of making
US6875687B1 (en) * 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
US6748960B1 (en) * 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
US6323121B1 (en) * 2000-05-12 2001-11-27 Taiwan Semiconductor Manufacturing Company Fully dry post-via-etch cleaning method for a damascene process
JP5307963B2 (ja) * 2000-06-23 2013-10-02 ハネウェル・インターナショナル・インコーポレーテッド 誘電フィルム及び材料における疎水性を回復する方法
US6337277B1 (en) * 2000-06-28 2002-01-08 Lam Research Corporation Clean chemistry low-k organic polymer etch
US6457477B1 (en) * 2000-07-24 2002-10-01 Taiwan Semiconductor Manufacturing Company Method of cleaning a copper/porous low-k dual damascene etch
US6486078B1 (en) * 2000-08-22 2002-11-26 Advanced Micro Devices, Inc. Super critical drying of low k materials
KR20030046506A (ko) * 2000-10-13 2003-06-12 미셀 테크놀로지즈, 인코포레이티드 이산화탄소 및 분리형 압력용기를 이용하는 드라이크리닝처리용 기구 및 방법
US6777344B2 (en) * 2001-02-12 2004-08-17 Lam Research Corporation Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications
US6620733B2 (en) * 2001-02-12 2003-09-16 Lam Research Corporation Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics
US6893969B2 (en) * 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
US6841483B2 (en) * 2001-02-12 2005-01-11 Lam Research Corporation Unique process chemistry for etching organic low-k materials
US6905555B2 (en) * 2001-02-15 2005-06-14 Micell Technologies, Inc. Methods for transferring supercritical fluids in microelectronic and other industrial processes
US6602351B2 (en) * 2001-02-15 2003-08-05 Micell Technologies, Inc. Methods for the control of contaminants following carbon dioxide cleaning of microelectronic structures
US6561220B2 (en) * 2001-04-23 2003-05-13 International Business Machines, Corp. Apparatus and method for increasing throughput in fluid processing
US6794293B2 (en) * 2001-10-05 2004-09-21 Lam Research Corporation Trench etch process for low-k dielectrics
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6949411B1 (en) * 2001-12-27 2005-09-27 Lam Research Corporation Method for post-etch and strip residue removal on coral films
US20050227183A1 (en) * 2002-01-11 2005-10-13 Mark Wagner Compositions and methods for image development of conventional chemically amplified photoresists
US7270941B2 (en) * 2002-03-04 2007-09-18 Tokyo Electron Limited Method of passivating of low dielectric materials in wafer processing
US7387868B2 (en) * 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
KR100969027B1 (ko) * 2002-04-12 2010-07-09 도쿄엘렉트론가부시키가이샤 세정 과정에서의 손상을 저감시키기 위한 다공질 유전체막의 처리 방법
US6669785B2 (en) * 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
JP2004158534A (ja) * 2002-11-05 2004-06-03 Kobe Steel Ltd 微細構造体の洗浄方法
US7709371B2 (en) * 2003-01-25 2010-05-04 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
US6989172B2 (en) * 2003-01-27 2006-01-24 Micell Technologies, Inc. Method of coating microelectronic substrates
US7392815B2 (en) * 2003-03-31 2008-07-01 Lam Research Corporation Chamber for wafer cleaning and method for making the same
US7357115B2 (en) * 2003-03-31 2008-04-15 Lam Research Corporation Wafer clamping apparatus and method for operating the same
US7153388B2 (en) * 2003-03-31 2006-12-26 Lam Research Corporation Chamber for high-pressure wafer processing and method for making the same
US7256134B2 (en) * 2003-08-01 2007-08-14 Applied Materials, Inc. Selective etching of carbon-doped low-k dielectrics
US8475666B2 (en) * 2004-09-15 2013-07-02 Honeywell International Inc. Method for making toughening agent materials
US7345000B2 (en) * 2003-10-10 2008-03-18 Tokyo Electron Limited Method and system for treating a dielectric film
US7141496B2 (en) * 2004-01-22 2006-11-28 Micell Technologies, Inc. Method of treating microelectronic substrates
US20050183740A1 (en) * 2004-02-19 2005-08-25 Fulton John L. Process and apparatus for removing residues from semiconductor substrates
JP4312630B2 (ja) * 2004-03-02 2009-08-12 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US20050196974A1 (en) * 2004-03-02 2005-09-08 Weigel Scott J. Compositions for preparing low dielectric materials containing solvents
US7037823B2 (en) * 2004-04-20 2006-05-02 Texas Instruments Incorporated Method to reduce silanol and improve barrier properties in low k dielectric ic interconnects
US7354623B2 (en) * 2004-05-24 2008-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Surface modification of a porous organic material through the use of a supercritical fluid
KR20070060117A (ko) * 2004-09-15 2007-06-12 허니웰 인터내셔널 인코포레이티드 처리제 물질
JP2006124410A (ja) * 2004-09-30 2006-05-18 Jsr Corp 表面疎水化用組成物、表面疎水化方法、半導体装置およびその製造方法
US7445015B2 (en) * 2004-09-30 2008-11-04 Lam Research Corporation Cluster tool process chamber having integrated high pressure and vacuum chambers
US20060102895A1 (en) * 2004-11-16 2006-05-18 Hendrix Bryan C Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures
US7678712B2 (en) * 2005-03-22 2010-03-16 Honeywell International, Inc. Vapor phase treatment of dielectric materials

Also Published As

Publication number Publication date
JP2009543339A (ja) 2009-12-03
CN101479830A (zh) 2009-07-08
KR20090025343A (ko) 2009-03-10
US7807219B2 (en) 2010-10-05
WO2008002443A1 (en) 2008-01-03
CN101479830B (zh) 2012-04-04
US20070298163A1 (en) 2007-12-27
SG173321A1 (en) 2011-08-29
KR101392647B1 (ko) 2014-05-19
TW200816309A (en) 2008-04-01
TWI424497B (zh) 2014-01-21

Similar Documents

Publication Publication Date Title
MY146528A (en) Repairing and restoring strength of etch-damaged low-k dielectric materials
Guan et al. The limitations of applying zero-valent iron technology in contaminants sequestration and the corresponding countermeasures: the development in zero-valent iron technology in the last two decades (1994–2014)
TW200943417A (en) Vapor phase repair and pore sealing of low-k dielectric materials
TW200737338A (en) Batch processing system and method for performing chemical oxide removal
JP7429685B2 (ja) 水素の生成のための方法
EP2985262B1 (en) Method for purifying silane compound or chlorosilane compound
JP2009543339A5 (https=)
TW200705551A (en) Method for forming a high density dielectric film by chemical vapor deposition
WO2009016149A3 (en) Process for manufacturing glycidol
CN107004563A (zh) 使用水蒸气连同氢气或含氢气体的等离子体减量
WO2008097343A3 (en) Functionalized graphene materials and method of production thereof
WO2010051173A3 (en) Fluoride ion cleaning method
WO2010016401A3 (en) Process for preparing 2,3,3,3-tetrafluoropropene and 1,3,3,3-tetrafluoropropene
TWI349964B (en) Exhaust equipment, substrate process equipment installed the exhaust equipment and method of exhausting
TW200711757A (en) Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor
WO2008105464A1 (ja) カルボン酸クロライドの製造方法
TW200737246A (en) Solid electrolyte capacitor and production method thereof
EA201490977A1 (ru) Гидрофобное остекление
WO2011047302A3 (en) Chamber cleaning methods using fluorine containing cleaning compounds
TW200636838A (en) Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
WO2009042415A3 (en) Processes for purification of silicon tetrafluoride
WO2008066841A3 (en) Inductively heated trap
KR101469336B1 (ko) 헥사클로로디실란 함유 증기의 처리 방법
CA2591078A1 (en) Method of removing sulfur from sulfur-containing hydrocarbon streams
WO2008014920A3 (en) Catalytic cracking of organic compounds using zeolite itq-33