KR101392647B1 - 에칭으로 손상된 로우-ｋ 유전체 재료의 강도의 리페어 및 복원 - Google Patents

에칭으로 손상된 로우-ｋ 유전체 재료의 강도의 리페어 및 복원 Download PDF

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Publication number
KR101392647B1
KR101392647B1 KR1020097001081A KR20097001081A KR101392647B1 KR 101392647 B1 KR101392647 B1 KR 101392647B1 KR 1020097001081 A KR1020097001081 A KR 1020097001081A KR 20097001081 A KR20097001081 A KR 20097001081A KR 101392647 B1 KR101392647 B1 KR 101392647B1
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catalyst
dielectric material
low
silane
capping agent
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KR20090025343A (ko
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제임스 데영
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램 리써치 코포레이션
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/185—Processes for applying liquids or other fluent materials performed by dipping applying monomolecular layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2401/00—Form of the coating product, e.g. solution, water dispersion, powders or the like
    • B05D2401/90—Form of the coating product, e.g. solution, water dispersion, powders or the like at least one component of the composition being in supercritical state or close to supercritical state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/005—Repairing damaged coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Insulating Materials (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
KR1020097001081A 2006-06-27 2007-06-21 에칭으로 손상된 로우-ｋ 유전체 재료의 강도의 리페어 및 복원 Expired - Fee Related KR101392647B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/475,206 2006-06-27
US11/475,206 US7807219B2 (en) 2006-06-27 2006-06-27 Repairing and restoring strength of etch-damaged low-k dielectric materials
PCT/US2007/014435 WO2008002443A1 (en) 2006-06-27 2007-06-21 Repairing and restoring strength of etch-damaged low-k dielectric materials

Publications (2)

Publication Number Publication Date
KR20090025343A KR20090025343A (ko) 2009-03-10
KR101392647B1 true KR101392647B1 (ko) 2014-05-19

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KR1020097001081A Expired - Fee Related KR101392647B1 (ko) 2006-06-27 2007-06-21 에칭으로 손상된 로우-ｋ 유전체 재료의 강도의 리페어 및 복원

Country Status (8)

Country Link
US (1) US7807219B2 (https=)
JP (1) JP2009543339A (https=)
KR (1) KR101392647B1 (https=)
CN (1) CN101479830B (https=)
MY (1) MY146528A (https=)
SG (1) SG173321A1 (https=)
TW (1) TWI424497B (https=)
WO (1) WO2008002443A1 (https=)

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JP4884180B2 (ja) * 2006-11-21 2012-02-29 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP5132244B2 (ja) * 2007-10-18 2013-01-30 大陽日酸株式会社 絶縁膜のダメージ回復方法および回復剤
US7998875B2 (en) * 2007-12-19 2011-08-16 Lam Research Corporation Vapor phase repair and pore sealing of low-K dielectric materials
WO2009085672A2 (en) 2007-12-21 2009-07-09 Lam Research Corporation Fabrication of a silicon structure and deep silicon etch with profile control
JP5322152B2 (ja) * 2008-03-25 2013-10-23 日本カーリット株式会社 シリコン化合物の製造方法
US8896239B2 (en) 2008-05-22 2014-11-25 Vladimir Yegorovich Balakin Charged particle beam injection method and apparatus used in conjunction with a charged particle cancer therapy system
WO2009142549A2 (en) 2008-05-22 2009-11-26 Vladimir Yegorovich Balakin Multi-axis charged particle cancer therapy method and apparatus
WO2010101489A1 (en) 2009-03-04 2010-09-10 Zakrytoe Aktsionernoe Obshchestvo Protom Multi-field charged particle cancer therapy method and apparatus
EP2283711B1 (en) 2008-05-22 2018-07-11 Vladimir Yegorovich Balakin Charged particle beam acceleration apparatus as part of a charged particle cancer therapy system
EP2283705B1 (en) 2008-05-22 2017-12-13 Vladimir Yegorovich Balakin Charged particle beam extraction apparatus used in conjunction with a charged particle cancer therapy system
US8173547B2 (en) * 2008-10-23 2012-05-08 Lam Research Corporation Silicon etch with passivation using plasma enhanced oxidation
US20110097904A1 (en) * 2009-10-22 2011-04-28 Lam Research Corporation Method for repairing low-k dielectric damage
US7981699B2 (en) * 2009-10-22 2011-07-19 Lam Research Corporation Method for tunably repairing low-k dielectric damage
EP2732035A2 (en) 2011-07-15 2014-05-21 Sarepta Therapeutics, Inc. Methods and compositions for manipulating translation of protein isoforms from alternative initiation start sites
US9627608B2 (en) * 2014-09-11 2017-04-18 Lam Research Corporation Dielectric repair for emerging memory devices
CN104841405A (zh) * 2015-05-08 2015-08-19 武汉科奥美萃生物科技有限公司 一种高效液相色谱反相键合相的超/亚临界流体封端方法
US9763322B2 (en) 2016-01-19 2017-09-12 Industrial Technology Research Institute Flexible substrate repair structure, manufacturing method thereof, and inspection and repair method of flexible substrate
KR102733881B1 (ko) 2016-09-12 2024-11-27 삼성전자주식회사 배선 구조체를 갖는 반도체 소자
EP3735325A4 (en) * 2018-01-05 2021-03-03 FUJIFILM Electronic Materials U.S.A, Inc. SURFACE TREATMENT COMPOSITIONS AND PROCEDURES
KR102480348B1 (ko) * 2018-03-15 2022-12-23 삼성전자주식회사 실리콘게르마늄 식각 전의 전처리 조성물 및 이를 이용한 반도체 장치의 제조 방법
KR20240083661A (ko) 2022-12-05 2024-06-12 윤소정 노크식 돌돌이 쓰레받기

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Also Published As

Publication number Publication date
JP2009543339A (ja) 2009-12-03
CN101479830A (zh) 2009-07-08
KR20090025343A (ko) 2009-03-10
US7807219B2 (en) 2010-10-05
WO2008002443A1 (en) 2008-01-03
CN101479830B (zh) 2012-04-04
US20070298163A1 (en) 2007-12-27
MY146528A (en) 2012-08-15
SG173321A1 (en) 2011-08-29
TW200816309A (en) 2008-04-01
TWI424497B (zh) 2014-01-21

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