JP2021527956A - シロキサン組成物、及び前記組成物を使用してケイ素含有膜を堆積させるための方法 - Google Patents
シロキサン組成物、及び前記組成物を使用してケイ素含有膜を堆積させるための方法 Download PDFInfo
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- JP2021527956A JP2021527956A JP2020569819A JP2020569819A JP2021527956A JP 2021527956 A JP2021527956 A JP 2021527956A JP 2020569819 A JP2020569819 A JP 2020569819A JP 2020569819 A JP2020569819 A JP 2020569819A JP 2021527956 A JP2021527956 A JP 2021527956A
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- 239000000203 mixture Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 64
- 229910052710 silicon Inorganic materials 0.000 title claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 29
- 239000010703 silicon Substances 0.000 title claims description 29
- 238000000151 deposition Methods 0.000 title abstract description 24
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000012530 fluid Substances 0.000 claims abstract description 37
- 239000012528 membrane Substances 0.000 claims abstract description 26
- 238000000137 annealing Methods 0.000 claims abstract description 22
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 239000007800 oxidant agent Substances 0.000 claims abstract description 7
- 239000002210 silicon-based material Substances 0.000 claims abstract description 6
- 239000003989 dielectric material Substances 0.000 claims abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 28
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 25
- 239000001257 hydrogen Substances 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- -1 cyclic siloxane compound Chemical class 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000001307 helium Substances 0.000 claims description 15
- 229910052734 helium Inorganic materials 0.000 claims description 15
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 229910021529 ammonia Inorganic materials 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 229910021645 metal ion Inorganic materials 0.000 claims description 12
- 150000004820 halides Chemical class 0.000 claims description 11
- 150000002431 hydrogen Chemical class 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 150000001805 chlorine compounds Chemical class 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 5
- ZJWXCSUSULCHCK-UHFFFAOYSA-N 2,2,5,5-tetramethyl-1,2,5-oxadisilolane Chemical compound C[Si]1(C)CC[Si](C)(C)O1 ZJWXCSUSULCHCK-UHFFFAOYSA-N 0.000 claims description 5
- 125000003342 alkenyl group Chemical group 0.000 claims description 5
- 125000000304 alkynyl group Chemical group 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 125000003118 aryl group Chemical group 0.000 claims description 5
- 150000001649 bromium compounds Chemical class 0.000 claims description 5
- 150000002222 fluorine compounds Chemical class 0.000 claims description 5
- 150000004694 iodide salts Chemical class 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 150000001451 organic peroxides Chemical class 0.000 claims description 3
- SBTOWVNDPLPKSY-UHFFFAOYSA-N 2,2,6,6-tetramethyl-1,2,6-oxadisilinane Chemical compound C[Si]1(C)CCC[Si](C)(C)O1 SBTOWVNDPLPKSY-UHFFFAOYSA-N 0.000 claims 1
- 230000009969 flowable effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 12
- 238000003848 UV Light-Curing Methods 0.000 abstract description 10
- 239000007787 solid Substances 0.000 abstract description 6
- 125000004122 cyclic group Chemical group 0.000 abstract description 3
- 239000002243 precursor Substances 0.000 description 25
- 230000008021 deposition Effects 0.000 description 17
- 239000012686 silicon precursor Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 13
- 238000009472 formulation Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
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- 239000007789 gas Substances 0.000 description 10
- 239000007788 liquid Substances 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 9
- 238000011282 treatment Methods 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 239000012071 phase Substances 0.000 description 7
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 6
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- ADKPKEZZYOUGBZ-UHFFFAOYSA-N [C].[O].[Si] Chemical compound [C].[O].[Si] ADKPKEZZYOUGBZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000004626 scanning electron microscopy Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
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- 238000005137 deposition process Methods 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
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- 230000009977 dual effect Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
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- 238000004062 sedimentation Methods 0.000 description 2
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- 239000012808 vapor phase Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- CIBUDKJODXACBL-UHFFFAOYSA-N [SiH3][SiH2]Br Chemical compound [SiH3][SiH2]Br CIBUDKJODXACBL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 239000004964 aerogel Substances 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000005234 chemical deposition Methods 0.000 description 1
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- FXMNVBZEWMANSQ-UHFFFAOYSA-N chloro(silyl)silane Chemical compound [SiH3][SiH2]Cl FXMNVBZEWMANSQ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
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- NFCGJSHYYNOKEM-UHFFFAOYSA-N iodo($l^{1}-silanyl)silicon Chemical compound [Si][Si]I NFCGJSHYYNOKEM-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
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- 150000002926 oxygen Chemical class 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0834—Compounds having one or more O-Si linkage
- C07F7/0838—Compounds with one or more Si-O-Si sequences
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
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- C—CHEMISTRY; METALLURGY
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Abstract
Description
表面特徴を備える基材を反応器中に配置する工程であって、基材が約−20℃〜約150℃の範囲の1つ又は複数の温度に保持され、反応器の圧力が100torr以下に保持される工程;
以下の式:
活性化された酸素源を反応器中に提供し、少なくとも1つの化合物と反応させて膜を形成して表面特徴の少なくとも一部をカバーする工程であって、酸素源が、例えばインサイチュプラズマ又はリモートプラズマによって活性化される工程;
約100℃〜1000℃の1つ又は複数の温度で膜をアニールする工程、及び任意選択で、この熱アニール工程に次いで、さらなるアニールのためにコーティングにUV照射を受けさせる工程;並びに
任意選択で、約100℃〜約1000℃の範囲の1つ又は複数の温度で、基材を酸素源で処理し、表面特徴の少なくとも一部にケイ素含有膜を形成する工程。特定の実施態様において、酸素源は、水蒸気、水プラズマ、オゾン、酸素、酸素プラズマ、酸素/ヘリウムプラズマ、酸素/アルゴンプラズマ、酸化窒素プラズマ、二酸化炭素プラズマ、過酸化水素、有機過酸化物及びそれらの混合物からなる群から選択される。この実施態様又は他の実施態様において、方法の工程は、表面特徴がケイ素含有膜で充填されるまで繰り返される。水蒸気が酸素源として用いられる実施態様において、基材温度は、約−20℃〜約40℃又は約−10℃〜約25℃の範囲である。
表面特徴を備える基材を、−20℃〜約150℃の範囲の温度に加熱され、100torr以下の圧力に保持される反応器中に配置する工程;
以下の式:
リモート又はインサイチュのいずれかのプラズマ源を反応器に提供し、化合物と反応させて、表面特徴の少なくとも一部にコーティングを形成する工程であって、1つの特定の実施態様において、化合物と反応してコーティングを形成するプラズマ源は、窒素プラズマ、窒素及びヘリウムを含むプラズマ、窒素及びアルゴンを含むプラズマ、アンモニアプラズマ、アンモニア及びヘリウムを含むプラズマ、アンモニア及びアルゴンを含むプラズマ、ヘリウムプラズマ、アルゴンプラズマ、水素プラズマ、水素及びヘリウムを含むプラズマ、水素及びアルゴンを含むプラズマ、アンモニア及び水素を含むプラズマ、有機アミンプラズマ並びにそれらの混合物からなる群から選択される工程;並びに
約100℃〜1000℃又は約100℃〜400℃の範囲の1つ又は複数の温度でコーティングをアニールして、表面特徴の少なくとも一部にケイ素含有膜を形成する工程。任意選択で、この熱アニール工程の後に、さらなるアニールのためにコーティングにUV照射を受けさせることができる。流動性プラズマ強化CVD法について、上の工程は、表面特徴が高密度化された1つ又は複数の膜で充填されるまで繰り返すことができる。
Claims (18)
- ケイ素含有膜を基材上に形成するための流動性化学気相堆積方法であって、反応チャンバー中に前記基材を配置する工程、並びに式I:
- 前記基材が、高いアスペクト比のギャップを間に有する表面特徴を備え、前記ケイ素含有化合物と前記活性種とが反応して前記ギャップ中に前記流動性膜を形成する、請求項1に記載の方法。
- 前記高いアスペクト比のギャップが3:1〜10:1の範囲の深さ:幅のアスペクト比を有する、請求項2に記載の方法。
- 前記活性種がリモートプラズマ源、リモートマイクロ波源又はリモートホットワイヤーシステムを使用して生成される、請求項1に記載の方法。
- 前記少なくとも1つの活性種が、水蒸気、オゾン、酸素、酸素/ヘリウム、酸素/アルゴン、酸化窒素、二酸化炭素、過酸化水素、有機過酸化物及びそれらの混合物からなる群から選択される種へのプラズマ源又はリモートマイクロ波源の作用によって生成される酸化剤である、請求項1に記載の方法。
- 前記少なくとも1つの環状シロキサン化合物が、2,2,5,5−テトラメチル−1−オキサ−2,5−ジシラシクロペンタンと2,2,6,6−テトラメチル−1−オキサ−2,6−ジシラシクロヘキサンとのうち一方又は両方を含む、請求項1に記載の方法。
- プラズマ、UV照射及び熱アニールからなる群から選択される処理で前記流動性膜を処理する工程をさらに含む、請求項1に記載の方法。
- 前記処理で前記流動性膜を処理する前記工程が前記流動性膜を誘電材料に変換する、請求項7に記載の方法。
- 前記少なくとも1つの活性種が、窒素、窒素及びヘリウムの混合物、窒素及びアルゴンの混合物、アンモニア;アンモニア及びヘリウムの混合物、アンモニア及びアルゴンの混合物、ヘリウム、アルゴン;水素、水素及びヘリウムの混合物、水素及びアルゴンの混合物、アンモニア及び水素の混合物、有機アミン並びにそれらの混合物から選択される種へのプラズマ源又はリモートマイクロ波源の作用によって生成される、請求項1に記載の方法。
- 請求項1に記載の方法によって形成される膜。
- 基材上への膜の流動性化学気相堆積のための組成物であって、前記組成物が2,2,5,5−テトラメチル−1−オキサ−2,5−ジシラシクロペンタンを含み、前記組成物が10ppmより少ないハロゲン化物イオン不純物を含み、前記ハロゲン化物イオンが塩化物、フッ化物、臭化物及びヨウ化物からなる群から選択される、組成物。
- 前記組成物が1ppmより少ない前記ハロゲン化物イオン不純物を含む、請求項11に記載の組成物。
- 前記組成物が10ppmより少ない金属イオン不純物を含み、前記金属イオンがAl3+、Fe2+、Fe3+、Ni2+及びCr3+からなる群から選択される、請求項11に記載の組成物。
- 前記組成物が1ppmより少ない前記金属イオン不純物を含む、請求項13に記載の組成物。
- 基材上への膜の流動性化学気相堆積のための組成物であって、前記組成物が2,2,6,6−テトラメチル−1−オキサ−2,6−ジシラシクロヘキサンを含み、前記組成物が10ppmより少ないハロゲン化物イオン不純物を含み、前記ハロゲン化物イオンが塩化物、フッ化物、臭化物及びヨウ化物からなる群から選択される、組成物。
- 前記組成物が1ppmより少ない前記ハロゲン化物イオン不純物を含む、請求項15に記載の組成物。
- 前記組成物が10ppmより少ない金属イオン不純物を含み、前記金属イオンがAl3+、Fe2+、Fe3+、Ni2+及びCr3+からなる群から選択される、請求項15に記載の組成物。
- 前記組成物が1ppmより少ない前記金属イオン不純物を含む、請求項17に記載の組成物。
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PCT/US2019/037402 WO2019241763A1 (en) | 2018-06-15 | 2019-06-16 | Siloxane compositions and methods for using the compositions to deposit silicon containing films |
US16/442,511 US20190382886A1 (en) | 2018-06-15 | 2019-06-16 | Siloxane Compositions and Methods for Using the Compositions to Deposit Silicon Containing Films |
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CN117524851A (zh) * | 2024-01-03 | 2024-02-06 | 长鑫新桥存储技术有限公司 | 氧化硅薄膜的制备方法及半导体结构 |
CN117524851B (zh) * | 2024-01-03 | 2024-05-14 | 长鑫新桥存储技术有限公司 | 氧化硅薄膜的制备方法及半导体结构 |
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JP7230067B2 (ja) | 2023-02-28 |
CN112334597A (zh) | 2021-02-05 |
TW202000968A (zh) | 2020-01-01 |
WO2019241763A1 (en) | 2019-12-19 |
KR102555932B1 (ko) | 2023-07-13 |
SG11202011887XA (en) | 2020-12-30 |
KR20210008172A (ko) | 2021-01-20 |
EP3807446A4 (en) | 2022-03-30 |
IL279320A (en) | 2021-01-31 |
US20190382886A1 (en) | 2019-12-19 |
TWI710659B (zh) | 2020-11-21 |
TW202120734A (zh) | 2021-06-01 |
CN112334597B (zh) | 2023-03-10 |
EP3807446A1 (en) | 2021-04-21 |
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