CN112335019A - 原子层沉积工艺中的氧化转化 - Google Patents

原子层沉积工艺中的氧化转化 Download PDF

Info

Publication number
CN112335019A
CN112335019A CN201980044136.3A CN201980044136A CN112335019A CN 112335019 A CN112335019 A CN 112335019A CN 201980044136 A CN201980044136 A CN 201980044136A CN 112335019 A CN112335019 A CN 112335019A
Authority
CN
China
Prior art keywords
reactant
reaction chamber
reactant gas
substrate
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980044136.3A
Other languages
English (en)
Inventor
道格拉斯·沃尔特·阿格纽
约瑟夫·R·阿贝尔
巴特·简·范施拉芬迪克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN112335019A publication Critical patent/CN112335019A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/338—Changing chemical properties of treated surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

描述了一种用于处理衬底的方法。将气相的第一反应物引入其中具有该衬底的反应室中。允许该第一反应物被吸附到该衬底的表面上。在该第一反应物的流停止之后，从该反应室中清扫该第一反应物的未反应部分。在该第一反应物被吸附到该衬底的表面上的同时，将该第二反应物以气相引入该反应室。该第二反应物包括比例为1∶1∶1的二氢(H2)、含氮反应物和含氧反应物。基于该第二反应物点燃等离子体。该衬底的表面暴露于该等离子体。该等离子体熄灭。从该反应室中清扫气体。

Description

原子层沉积工艺中的氧化转化
相关申请
本申请要求于2018年6月29日提交的美国临时专利申请号62/692,015的优先权，其全部内容通过引用并入本文。
技术领域
本公开总体上涉及一种用于在原子层沉积工艺中减少杂质的方法，并且特别是涉及一种在原子层沉积工艺中的改进的氧化转化。
背景技术
含硅膜具有各种物理、化学和机械性能，并且经常用于半导体制造工艺中。例如，氮化硅膜可以用作扩散阻挡层、栅极绝缘体、侧壁间隔物和封装层，并且氧化硅可以用作介电绝缘体。在各种应用中，通过化学气相沉积(CVD)或通过原子层沉积(ALD)来沉积含硅膜。然而，含硅膜的一些沉积可能是不保形的。随着器件尺寸的不断缩小，对通过高深宽比拓扑结构调整含硅膜的沉积轮廓的需求不断增加。
附图说明
在附图的视图中，通过示例而非限制的方式示出了一些实施方式。
图1是根据示例性实施方式的用于处理衬底的方法的流程图。
图2是根据另一示例性实施方式的用于处理衬底的方法的流程图。
图3是示出根据示例性实施方式的用于处理衬底的系统的框图。
图4是示出根据示例性实施方式的完全和不完全反应的图。
图5是根据一个示例性实施方式的FTIP光谱，其示出在转化气体中存在H2气体对膜中杂质含量的影响。
图6是根据一个示例性实施方式的FTIR光谱，其示出在转化气体中存在H2气体对膜中的主要Si-O峰的影响。
具体实施方式
以下描述包括体现本发明主题的说明性实施方式的系统、方法、技术、指令序列和计算机器程序产品。在下面的描述中，出于解释的目的，阐述了许多具体细节以便提供对示例性实施方式的透彻理解。然而，对于本领域技术人员显而易见的是，可以在没有这些具体细节的情况下实践本实施方式。
本专利文件的公开的一部分包含受版权保护的材料。版权所有者不反对任何人以专利和商标局专利文件或记录中出现的方式对专利文件或专利公开进行传真复制，但在任何情况下均保留所有版权。以下声明适用于下文所述以及构成本文件一部分的附图中的任何数据：版权所有朗姆研究公司(LAM Research Corporation)，2018，保留所有权利。
在本申请中，术语“半导体晶片”、“晶片”、“衬底”、“晶片衬底”和“部分制造的集成电路”可互换使用。本领域普通技术人员将理解，术语“部分制造的集成电路”可以指代在其上的集成电路制造的许多阶段中的任何一个阶段的硅晶片。术语“室”和“反应器”也可互换使用。
晶片包括需要在其中沉积绝缘的诸如沟槽、触点和通孔之类的特征。随着特征在尺寸上的缩小(例如，小于50nm级)或在深宽比上的增大(>5：1)，向其中沉积高质量的绝缘材料变得更具挑战性。解决这些问题的一些方法涉及化学气相沉积(CVD)、原子层沉积(ALD)和等离子体增强原子层沉积(PEALD)。
PEALD和ALD是循环沉积工艺，其中衬底连续暴露于各种化学物质中。通常将衬底暴露于第一化学物质或化学物质的组合以形成吸附层。通过泵送或清扫(purge)除去多余的第一化学物质或化学物质。引入第二化学物质或化学物质的组合以与第一材料反应以形成沉积的材料层。特定地选择两种化学物质或化学物质的组合以彼此反应以形成沉积的材料层。
在ALD工艺过程中，通常在升高的沉积温度下，两组化学物质反应的趋势被用来驱动膜的形成。在PEALD工艺过程中，等离子体能量用于增强两组化学物质之间的反应或提供其他所需的膜特性。这样，PEALD具有较低的处理温度的优势，这能够实现在热不稳定的材料上的沉积。它还降低了设备成本并可以提高处理量。然而，PEALD工艺可能会导致较差的膜质量。
当前用于沉积SiO2的PEALD工艺通常涉及使用Ar/O2或N2O/O2等离子体，或它们的某种组合。这些等离子体用于影响PEALD SiO2循环的第二个主要步骤；即，产生羟基封端的表面，以进一步与含硅的前体反应。Ar/O2等离子体可有效地在低温下生产高质量的膜(由于含Ar的等离子体的优势，例如改善了等离子体密度和离子轰击)。结果，该工艺条件通常用于图案化应用。
然而，含Ar的等离子体的主要缺点是相对于RF功率的操作窗口有限。已知在某些瓦特以上，室内会发生等离子体和电弧，从而严重限制了该工艺的应用。相反，已知由N2O/O2气体组成的等离子体更稳固，从而允许使用更高功率的等离子体。然而，与该增加的工艺窗口相关联的是氧化和杂质去除效率的降低。
替代的等离子体化学法提供了另外的缺点和挑战。例如，对于某些气体(例如，O2)，等离子体可能难以快速点燃。某些气体成分可能很昂贵或难以获得(例如O2/He、O2/Ne)。其他化学物质由于其物理性质或化学不稳定性或反应性(例如，H2O、O3、H2O2)而难以输送，从而显著增加了设备成本。
为了解决上述挑战，本公开描述了基于改性氧化的替代性原子层沉积(ALD)工艺。这种改进的氧化方法包括将二氢气体(H2)引入等离子体。在衬底的SiO2原子层沉积中，表面氢化硅烷基团转化为相应的氢硅氧烷封端表面。与现有的400℃膜相比，向N2O/O2等离子体中添加氢气显著改善了所得的电膜性能。这种在必要的操作温度下的200℃下降可以节省大量成本。
另外，将H2添加到N2O等离子体中产生密度更高/质量更高的膜。将H2添加到O2等离子体具有减少底层金属(若它们具有可还原的金属氧化物)的氧化的优点。如果已经存在金属氧化物，则还可以通过添加H2将其还原。
在沉积/蚀刻/沉积工艺中使用H2/O2或在将抑制化学物质用作PEALD工艺的一部分时的其他益处包括基本消除了膜中的F和N。由于H深入渗透到膜中，因此人们可以保持抑制作用，同时在化学物质达到其目的后仍去除掩埋的残留化学物质。
在本公开的一些示例实施方式中，将二氢(H2)添加至由1：1N2O/O2混合物组成的等离子体气体组合物中。1：1：1的混合物(H2：N2O：O2)使得消除了源自有机膜杂质的IR波段。此外，在这些条件下，击穿场和漏电流特性相比基线都得到改善。
图1是根据示例性实施方式的用于处理衬底的方法的流程图。方法100从操作102开始，其中，将具有凹陷特征的衬底提供到室中。在操作104中，将一定剂量的第一前体(也称为反应物)流入该室。第一前体吸附到衬底的表面上，包括在凹陷特征中。在沉积的膜包含硅的情况下，第一前体通常是含硅的反应物。在沉积的膜包含金属的情况下，第一前体通常是含金属的反应物。接下来，在操作106处清扫反应室。在一些实施方式中，清扫包括用非反应性气体吹扫反应室。替代地或附加地，清扫可以包括通过执行抽空来排空反应室。在这种情况下，抽空期间反应室中的压力明显低于反应物输送期间的压力。该吹扫操作106的目的是从反应室中去除所有或基本上所有的第一前体。在一些实施方式中，清扫/吹扫可能不太完全，其中仅一部分第一前体从反应室中除去。例如，图4示出了完全和不完全的反应。对于完全的反应，硅烷402与前体反应以生成分子结构404。然而，不完全的反应在衬底表面上导致具有氨基硅烷的分子结构406。随后的氧化可能仅仅是部分转化。这种部分转化导致胺、酰胺、羧酸、酯和醇官能团以及C、N、H掺入膜中。
再参照图1，在操作108中，将第二反应物流入反应室。第二反应物通常是二氢(H2)、含氮反应物和/或含氧反应物。第一和第二反应物的每一个也可以是反应物的混合物。在一个示例中，第二反应物可以包括比例为1∶1∶1的二氢、氧和一氧化二氮。在将一种以上反应物同时输送到反应室的情况下，可以在输送之前(例如，在单独的混合容器中)或输送之后(例如，在反应室本身中)混合反应物。
在操作110中，将等离子体在反应室中点燃并暴露于衬底表面。在各种实施方式中，操作108和110至少部分地同时发生。在一些情况下，可以在110中发生等离子体点燃之前，在108中使第二反应物预流入反应室中。在特定的示例中，连续地提供第二反应物。在其他实施方式中，操作108和110同时开始。在替代实施方式中，在110中，将第二反应物流入反应室，然后在操作110中发生脉冲等离子体点燃之前从反应室清扫/吹扫该第二反应物。
接下来，在操作112中熄灭等离子体并且清扫反应室。如关于在操作106中的清扫所提到的，这可以包括吹扫和/或抽空反应室。在某些情况下，该吹扫/清扫可能是可选的，尽管使用等离子后清扫可有助于促进高质量膜的形成。操作104-112通常导致单层的材料的沉积，尽管在某些实施方式中，可以沉积少于单层的材料。如虚线箭头所示，这些步骤可以重复多次以便形成所需厚度的膜。
如所示，等离子体特性可以对沉积膜具有显著的影响。在许多实施方式中，等离子体是电容耦合等离子体(CCP)。然而，也可以使用其他类型的等离子体，例如感应耦合等离子体。可以使用各种类型的等离子体发生器，包括RF、DC和微波等离子体发生器。等离子体可以是直接等离子体(即，在反应室中生成的等离子体)，也可以是远程生成的等离子体。
图2是根据另一示例性实施方式的用于处理衬底的方法的流程图。在操作202(投料过程)中，将硅烷前体引入反应器中的衬底。应该注意的是，当使用其他反应器和等离子体源时，操作条件会有显著变化。以下是四站CCP反应器的投料过程的参数范围的示例：
气体：Ar(1-30slm)、N2(0-30slm)、H2(0-5slm)、硅烷前体，
压力：0.6-6托，
温度：150-650℃。
在操作204(清扫过程)中，从室中清扫副产物和过量的反应物。以下是清扫过程中一系列参数的示例：
气体：Ar(1-30slm)、N2(0-30slm)、H2(0-5slm)、O2(0.5-15slm)、N2O(0.5-5slm)、压力：0.6-6托，
温度：150-650℃。
在操作206(氧化过程)中，将衬底的表面氧化并用RF等离子体清洗。以下是氧化过程的一系列参数的示例：
气体：Ar(1-30slm)、N2(0-30slm)、H2(0-5slm)、O2(0.5-15slm)、N2O(0.5-5slm)，
RF功率：500W-5000W，
压力：0.6-6托，
温度：150-650℃。
在操作208(清扫过程)中，从室中清扫残留的氧化剂。以下是清扫过程的参数的示例：
气体：Ar(1-30slm)、N2(0-30slm)、H2(0-5slm)、O2(0.5-15slm)、N2O(0.5-5slm)，压力：0.6-6托，
温度：150-650℃。
图3是示出根据示例性实施方式的用于处理衬底的系统的框图。用于执行所公开的方法的合适的装置通常包括用于完成过程操作的硬件和具有根据本发明的用于控制过程操作的指令的系统控制器。例如，在一些实施方式中，硬件可以包括处理工具中包括的一个或多个PEALD处理站。
如图所示，反应器300包括处理室324，该处理室324包围反应器的其他组件，并用于容纳由例如电容器类型的系统生成的等离子体，该电容器类型的系统包括与接地的加热器块320结合工作的喷头314。连接至匹配网络306的高频RF发生器304，以及连接至喷头314的低频RF发生器302。这些RF发生器能够如本文所述地点燃等离子体。由匹配网络306提供的功率和频率足以从处理气体中生成等离子体。在一个示例性实施方式中，使用了HFRF发生器和LFRF发生器两者。在典型的过程中，高频RF分量通常在约2-60MHz之间；在优选的实施方式中，HF分量为约13.56MHz或27MHz。低频LF分量通常在约0.050-2MHz之间；在特定的实施方式中，LF分量为约350kHz。
在反应器内，晶片基座318支撑衬底316。该基座通常包括卡盘、叉子或升降销，以在沉积和/或等离子体处理反应期间和之间保持和转移衬底。该卡盘可以是静电卡盘、机械卡盘或可用于工业和/或研究的各种其他类型的卡盘。
经由入口312引入工艺气体。多个源气体管线310连接到歧管308。气体可以预混合或不预混合。采用适当的阀门和质量流量控制机制，以确保在该工艺的沉积和等离子体处理阶段期间输送正确的气体。在化学前体以液体形式输送的情况下，采用液体流量控制机构。然后将液体汽化，并在到达沉积室之前在其于加热到高于其汽化点的歧管中运输期间与其他工艺气体混合。
工艺气体经由出口322离开室300。真空泵326(例如，一或两级机械干泵和/或涡轮分子泵)通常将工艺气体抽出并通过闭环控制的流量限制装置(例如节流阀或摆阀)维持反应器内的适当低压。
本领域普通技术人员将认识到，反应器300的其他变型可用于应用目前描述的方法。例如，反应器300可以包括动力基座而不是喷头314。
图5是根据一个示例性实施方式的FTIR光谱，其示出在转化气体中存在H2气体对膜中杂质含量的影响。
图6是根据一个示例性实施方式的FTIR光谱，其示出在转化气体中存在H2气体对膜中的主要Si-O峰的影响。
从图5和图6中可以看出，将H2添加到氧化步骤中利用氨基硅烷化学法减少了ALDSiO2中的杂质；观察到对Si-O带几乎没有影响。
实现上述目的的传统方法主要包括a)增加室温度，b)增加RF功率，以及c)工艺化学改变。这三种策略都有从较高的CoC到过程不稳定等显著的缺点。
尽管已经参考特定示例性实施方式描述了实施方式，但是显而易见的是，可以对这些实施方式进行各种修改和改变，而不脱离本公开的更广泛范围。因此，说明书和附图应被认为是说明性的而不是限制性意义的。形成其一部分的附图通过图示而非限制的方式示出了可以实践本主题的特定实施方式。足够详细地描述了所示的实施方式，以使本领域技术人员能够实践本文公开的教导。可以利用其他实施方式并从中得出其他实施方式，使得可以在不脱离本公开的范围的情况下进行结构和逻辑上的替换和改变。因此，不应在限制意义上理解此详细描述，并且各种实施方式的范围仅由所附权利要求以及这些权利要求所赋予的等同物的全部范围来限定。
在此，本发明主题的此类实施方式可以仅出于方便的目的而单独地和/或共同地通过术语“发明”来指代，并且不意图将本申请的范围自动限于任何单个发明或发明构思(如果实际上公开了不止一个)。因此，尽管在此已经图示和描述了特定的实施方式，但是应当理解，被计算为实现相同目的的任何布置都可以代替所示的特定实施方式。本公开旨在覆盖各种实施方式的所有修改或变型。通过阅读以上描述，以上实施方式的组合，以及本文中未具体描述的其他实施方式对于本领域技术人员将是显而易见的。

Claims (10)

1.一种用于处理衬底的方法，所述方法包括：
将第一反应物气体输送到其中具有所述衬底的反应室中，所述第一反应物气体的反应部分被吸附到所述衬底的表面上；
从所述反应室中清扫所述第一反应物气体的未反应部分，所述第一反应物气体的所述未反应部分不被吸附到所述衬底的所述表面上；
将第二反应物气体输送到所述反应室中，所述第二反应物气体包括二氢(H2)气体、氮基反应物气体和氧基反应物气体；
在所述反应室内用所述第二反应物气体点燃等离子体，所述等离子体暴露于所述衬底的所述表面；
熄灭所述等离子体；以及
在熄灭所述等离子体之后清扫所述反应室。
2.根据权利要求1所述的方法，其中，所述等离子体气体由H2、一氧化二氮(N2O)和双氧(O2)的混合物组成。
3.根据权利要求1所述的方法，所述方法还包括：
在将所述第二反应物气体输送到所述反应室之前，在耦合到所述反应室的混合容器中混合所述二氢、所述氮基反应物气体和所述氧基反应物气体。
4.根据权利要求1所述的方法，其中，输送所述第二反应物气体还包括：
将所述二氢气体、所述氮基反应物气体和所述氧基反应物气体分别输送到所述反应室中。
5.根据权利要求1所述的方法，其中，在将所述第二反应物气体输送到所述反应室中的同时点燃所述等离子体。
6.根据权利要求1所述的方法，所述方法还包括：
在所述反应室中施加约0.6托至约6托的压力；
将所述反应室加热至约150摄氏度至约650摄氏度的温度；以及
将约500W到约5000W的射频(RF)功率施加到耦合到所述反应室的RF发生器。
7.一种用于处理衬底的方法，所述方法包括：
将气相的第一反应物引入到其中具有所述衬底的反应室中，并允许所述第一反应物吸附到所述衬底的表面上；
在所述第一反应物的流停止之后清扫所述反应室；
在所述第一反应物被吸附到所述衬底的表面上的同时将气相的第二反应物引入所述反应室中，所述第二反应物包含比例为1：1：1的二氢(H2)、含氮反应物和含氧反应物；
基于所述第二反应物点燃等离子体；
使所述衬底的表面暴露于所述等离子体，以驱动所述衬底的表面上的所述第一反应物和所述第二反应物之间的表面反应以形成膜层；
熄灭所述等离子体；以及
清扫所述反应室。
8.一种用于处理衬底的系统，所述系统包括：
其中具有所述衬底的反应室；
配置有指令以执行以下操作的控制器：
将第一反应物气体输送到所述反应室中，所述第一反应物气体的反应部分被吸附到所述衬底的表面上，以及
将第二反应物气体输送到所述反应室中，所述第二反应物气体包括二氢(H2)气体、氮基反应物气体和氧基反应物气体；
耦合到所述反应室的泵，所述泵被配置为在输送所述第一反应物气体之后从所述反应室中清扫所述第一反应物气体的未反应部分，所述第一反应物气体的所述未反应部分不被吸附到所述衬底的所述表面上；以及
耦合到所述反应室的RF发生器，所述RF发生器被配置为在所述反应室中用所述第二反应物气体点燃等离子体，所述等离子体暴露于所述衬底的所述表面。
9.根据权利要求8所述的系统，其中，所述第二反应物包括1∶1∶1的H2、一氧化二氮(N2O)和双氧(O2)。
10.根据权利要求8所述的系统，所述系统还包括：
耦合到所述反应室的混合容器，所述混合容器被配置为在将所述第二反应物气体输送到所述反应室中之前将所述二氢、所述氮基反应物气体和所述氧基反应物气体混合。
CN201980044136.3A 2018-06-29 2019-06-27 原子层沉积工艺中的氧化转化 Pending CN112335019A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862692015P 2018-06-29 2018-06-29
US62/692,015 2018-06-29
PCT/US2019/039621 WO2020006313A1 (en) 2018-06-29 2019-06-27 Oxidative conversion in atomic layer deposition processes

Publications (1)

Publication Number Publication Date
CN112335019A true CN112335019A (zh) 2021-02-05

Family

ID=68987561

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980044136.3A Pending CN112335019A (zh) 2018-06-29 2019-06-27 原子层沉积工艺中的氧化转化

Country Status (6)

Country Link
US (1) US20210272801A1 (zh)
KR (1) KR20210016476A (zh)
CN (1) CN112335019A (zh)
SG (1) SG11202013097VA (zh)
TW (1) TWI825114B (zh)
WO (1) WO2020006313A1 (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103243310A (zh) * 2012-02-14 2013-08-14 诺发系统公司 用于等离子体激活的保形膜沉积的前体
US20130330933A1 (en) * 2012-06-11 2013-12-12 Asm Ip Holding B.V. Method for Forming Silicon-Containing Dielectric Film by Cyclic Deposition with Side Wall Coverage Control
CN104752199A (zh) * 2013-11-07 2015-07-01 诺发系统公司 用于先进图案化的软着陆纳米层压层
CN106024673A (zh) * 2015-03-26 2016-10-12 朗姆研究公司 使用具有间歇恢复等离子体的ald氧化硅表面涂层来使自由基重组最小化

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7807225B2 (en) * 2003-01-31 2010-10-05 Sharp Laboratories Of America, Inc. High density plasma non-stoichiometric SiOxNy films
US7906174B1 (en) * 2006-12-07 2011-03-15 Novellus Systems, Inc. PECVD methods for producing ultra low-k dielectric films using UV treatment
US8367506B2 (en) * 2007-06-04 2013-02-05 Micron Technology, Inc. High-k dielectrics with gold nano-particles
US20100055442A1 (en) * 2008-09-03 2010-03-04 International Business Machines Corporation METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES
US8524612B2 (en) * 2010-09-23 2013-09-03 Novellus Systems, Inc. Plasma-activated deposition of conformal films
WO2012057889A1 (en) * 2010-10-29 2012-05-03 Applied Materials, Inc. Atomic layer deposition film with tunable refractive index and absorption coefficient and methods of making
JP2013072120A (ja) * 2011-09-28 2013-04-22 Toppan Printing Co Ltd ガスバリアフィルムの製造方法およびガスバリアフィルム
KR20140129231A (ko) * 2012-02-21 2014-11-06 어플라이드 머티어리얼스, 인코포레이티드 원자 층 증착 리소그래피
US8940646B1 (en) * 2013-07-12 2015-01-27 Lam Research Corporation Sequential precursor dosing in an ALD multi-station/batch reactor
US9745658B2 (en) * 2013-11-25 2017-08-29 Lam Research Corporation Chamber undercoat preparation method for low temperature ALD films
US10526701B2 (en) * 2015-07-09 2020-01-07 Lam Research Corporation Multi-cycle ALD process for film uniformity and thickness profile modulation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103243310A (zh) * 2012-02-14 2013-08-14 诺发系统公司 用于等离子体激活的保形膜沉积的前体
US20130330933A1 (en) * 2012-06-11 2013-12-12 Asm Ip Holding B.V. Method for Forming Silicon-Containing Dielectric Film by Cyclic Deposition with Side Wall Coverage Control
CN104752199A (zh) * 2013-11-07 2015-07-01 诺发系统公司 用于先进图案化的软着陆纳米层压层
CN106024673A (zh) * 2015-03-26 2016-10-12 朗姆研究公司 使用具有间歇恢复等离子体的ald氧化硅表面涂层来使自由基重组最小化

Also Published As

Publication number Publication date
KR20210016476A (ko) 2021-02-15
SG11202013097VA (en) 2021-01-28
US20210272801A1 (en) 2021-09-02
TWI825114B (zh) 2023-12-11
WO2020006313A1 (en) 2020-01-02
TW202013558A (zh) 2020-04-01

Similar Documents

Publication Publication Date Title
US7435684B1 (en) Resolving of fluorine loading effect in the vacuum chamber
KR101837648B1 (ko) 라디칼-컴포넌트 ｃｖｄ를 위한 인­시츄 오존 경화
KR20210095050A (ko) 박막 형성 방법 및 박막 표면 개질 방법
US7211525B1 (en) Hydrogen treatment enhanced gap fill
US7790633B1 (en) Sequential deposition/anneal film densification method
CN107665811B (zh) 使用复合peald和pecvd方法的可变深宽比特征的间隙填充
US7148155B1 (en) Sequential deposition/anneal film densification method
US7297608B1 (en) Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition
TWI579916B (zh) 整合可流動氧化物及頂蓋氧化物之新穎間隙填充
CN110120332A (zh) 对氧化硅膜进行沉积后处理的方法
US7727906B1 (en) H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift
US20130288485A1 (en) Densification for flowable films
TW201546314A (zh) 用以降低金屬氧化物與金屬氮化物膜中的表面粗糙度之射頻循環清洗
KR20170017779A (ko) 알루미늄 및 질소 함유 물질의 선택적 퇴적
KR20130086525A (ko) 컨포멀 붕소 질화물 막의 증착
KR20120102155A (ko) 산화물 라이너를 이용하는 유동성 유전체
KR20130135301A (ko) 라디칼 증기 화학 기상 증착
US11848199B2 (en) Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill
CN113330141B (zh) 沉积氮化硅的方法
CN112335019A (zh) 原子层沉积工艺中的氧化转化
US11978625B2 (en) Methods of forming metal nitride films
US20240209499A1 (en) Method and system for depositing boron nitride
KR20230151903A (ko) 기판 처리 방법
CN116169097A (zh) 形成SiOC和SiOCN低k间隔物的方法
CN116356294A (zh) 形成低k材料层的方法、包括该层的结构及其形成系统

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination