JP2009524210A5 - - Google Patents
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- Publication number
- JP2009524210A5 JP2009524210A5 JP2008545607A JP2008545607A JP2009524210A5 JP 2009524210 A5 JP2009524210 A5 JP 2009524210A5 JP 2008545607 A JP2008545607 A JP 2008545607A JP 2008545607 A JP2008545607 A JP 2008545607A JP 2009524210 A5 JP2009524210 A5 JP 2009524210A5
- Authority
- JP
- Japan
- Prior art keywords
- state
- resistance
- chalcogenide
- chalcogenide material
- reset
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 150000004770 chalcogenides Chemical class 0.000 claims description 203
- 239000000463 material Substances 0.000 claims description 159
- 229910052732 germanium Inorganic materials 0.000 claims description 24
- 229910052787 antimony Inorganic materials 0.000 claims description 19
- 229910052714 tellurium Inorganic materials 0.000 claims description 12
- 230000015654 memory Effects 0.000 description 62
- 239000000956 alloy Substances 0.000 description 47
- 229910045601 alloy Inorganic materials 0.000 description 47
- 230000008859 change Effects 0.000 description 44
- 239000000203 mixture Substances 0.000 description 44
- 238000002425 crystallisation Methods 0.000 description 41
- 230000008025 crystallization Effects 0.000 description 41
- 230000036961 partial effect Effects 0.000 description 38
- 230000007423 decrease Effects 0.000 description 22
- 238000000034 method Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 19
- 239000013078 crystal Substances 0.000 description 18
- 230000006870 function Effects 0.000 description 13
- 238000005325 percolation Methods 0.000 description 10
- 238000009825 accumulation Methods 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000004132 cross linking Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 230000006911 nucleation Effects 0.000 description 7
- 238000010899 nucleation Methods 0.000 description 7
- 230000008707 rearrangement Effects 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000012782 phase change material Substances 0.000 description 6
- 238000003491 array Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 230000006399 behavior Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000002349 favourable effect Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052798 chalcogen Inorganic materials 0.000 description 3
- 150000001787 chalcogens Chemical class 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000007578 melt-quenching technique Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 230000001537 neural effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000008521 reorganization Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 230000003936 working memory Effects 0.000 description 1
Images
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/301,211 | 2005-12-12 | ||
| US11/301,211 US7525117B2 (en) | 2005-08-09 | 2005-12-12 | Chalcogenide devices and materials having reduced germanium or telluruim content |
| PCT/US2006/044469 WO2007070218A2 (en) | 2005-08-09 | 2006-11-16 | Chalcogenide devices and materials having reduced germanium or telluruim content |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009524210A JP2009524210A (ja) | 2009-06-25 |
| JP2009524210A5 true JP2009524210A5 (enExample) | 2013-02-14 |
| JP5520484B2 JP5520484B2 (ja) | 2014-06-11 |
Family
ID=40020772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008545607A Expired - Fee Related JP5520484B2 (ja) | 2005-12-12 | 2006-11-16 | ゲルマニウムまたはテルル含有量の少ないカルコゲナイドデバイス及びカルコゲナイド材料 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5520484B2 (enExample) |
| KR (2) | KR101330769B1 (enExample) |
| TW (1) | TWI458147B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080042119A1 (en) * | 2005-08-09 | 2008-02-21 | Ovonyx, Inc. | Multi-layered chalcogenide and related devices having enhanced operational characteristics |
| JP5320295B2 (ja) | 2006-11-02 | 2013-10-23 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 金属薄膜のｃｖｄ／ａｌｄに有用なアンチモンおよびゲルマニウム錯体 |
| KR101177284B1 (ko) * | 2007-01-18 | 2012-08-24 | 삼성전자주식회사 | 상변화 물질층과 그 제조방법과 이 방법으로 형성된 상변화물질층을 포함하는 상변화 메모리 소자와 그 제조 및 동작방법 |
| KR101291222B1 (ko) * | 2007-11-29 | 2013-07-31 | 삼성전자주식회사 | 상변화 메모리 소자의 동작 방법 |
| JP4929228B2 (ja) * | 2008-01-23 | 2012-05-09 | 韓國電子通信研究院 | 相変化メモリー素子及びその製造方法 |
| US20090215225A1 (en) | 2008-02-24 | 2009-08-27 | Advanced Technology Materials, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
| WO2009134989A2 (en) | 2008-05-02 | 2009-11-05 | Advanced Technology Materials, Inc. | Antimony compounds useful for deposition of antimony-containing materials |
| CN102484127B (zh) * | 2009-09-04 | 2015-07-15 | 惠普开发有限公司 | 基于混合金属价键化合物的记忆电阻 |
| WO2011119175A1 (en) | 2010-03-26 | 2011-09-29 | Advanced Technology Materials, Inc. | Germanium antimony telluride materials and devices incorporating same |
| WO2011146913A2 (en) | 2010-05-21 | 2011-11-24 | Advanced Technology Materials, Inc. | Germanium antimony telluride materials and devices incorporating same |
| WO2012138615A2 (en) * | 2011-04-03 | 2012-10-11 | Advanced Technology Materials, Inc. | Oxic germanium-antimony-tellurium material and phase change memory comprising same |
| US8946666B2 (en) * | 2011-06-23 | 2015-02-03 | Macronix International Co., Ltd. | Ge-Rich GST-212 phase change memory materials |
| KR102117124B1 (ko) | 2012-04-30 | 2020-05-29 | 엔테그리스, 아이엔씨. | 유전체 물질로 중심-충전된 상 변화 합금을 포함하는 상 변화 메모리 구조체 |
| WO2014070682A1 (en) | 2012-10-30 | 2014-05-08 | Advaned Technology Materials, Inc. | Double self-aligned phase change memory device structure |
| WO2014137943A2 (en) * | 2013-03-03 | 2014-09-12 | Adesto Technologies Corporation | Programmable impedance memory elements and corresponding methods |
| US9564214B2 (en) * | 2015-03-13 | 2017-02-07 | Kabushiki Kaisha Toshiba | Memory device |
| KR101889600B1 (ko) * | 2016-03-31 | 2018-08-17 | 연세대학교 산학협력단 | 비휘발성 메모리 소자 및 이의 제조 방법 |
| JP2017224688A (ja) | 2016-06-14 | 2017-12-21 | ソニー株式会社 | 回路素子、記憶装置、電子機器、回路素子への情報の書き込み方法、および回路素子からの情報の読み出し方法 |
| US20210288250A1 (en) * | 2020-03-13 | 2021-09-16 | International Business Machines Corporation | Phase Change Memory Having Gradual Reset |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4499557A (en) * | 1980-10-28 | 1985-02-12 | Energy Conversion Devices, Inc. | Programmable cell for use in programmable electronic arrays |
| US4876667A (en) * | 1987-06-22 | 1989-10-24 | Energy Conversion Devices, Inc. | Data storage device having a phase change memory medium reversible by direct overwrite |
| JP2867701B2 (ja) * | 1989-09-28 | 1999-03-10 | 松下電器産業株式会社 | 光学情報記録媒体の製造方法 |
| US5335219A (en) * | 1991-01-18 | 1994-08-02 | Ovshinsky Stanford R | Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
| US5414271A (en) * | 1991-01-18 | 1995-05-09 | Energy Conversion Devices, Inc. | Electrically erasable memory elements having improved set resistance stability |
| JP3454821B2 (ja) * | 1991-08-19 | 2003-10-06 | エナージー・コンバーション・デバイセス・インコーポレーテッド | 電気的に消去可能な、直接重ね書き可能なマルチビット単セルメモリ素子およびそれらから作製したアレイ |
| DE69322443T2 (de) * | 1992-06-17 | 1999-08-05 | Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka | Optisches Informationsaufzeichnungsmedium |
| KR100465001B1 (ko) * | 1996-06-27 | 2005-06-13 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 가역광정보매체 |
| US6314014B1 (en) * | 1999-12-16 | 2001-11-06 | Ovonyx, Inc. | Programmable resistance memory arrays with reference cells |
| US6967344B2 (en) * | 2003-03-10 | 2005-11-22 | Energy Conversion Devices, Inc. | Multi-terminal chalcogenide switching devices |
-
2006
- 2006-11-16 KR KR1020087005573A patent/KR101330769B1/ko not_active Expired - Fee Related
- 2006-11-16 JP JP2008545607A patent/JP5520484B2/ja not_active Expired - Fee Related
- 2006-11-16 KR KR1020137015680A patent/KR101501980B1/ko not_active Expired - Fee Related
- 2006-12-11 TW TW095146197A patent/TWI458147B/zh not_active IP Right Cessation
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