TWI458147B - 具有較少的鍺或碲成份的硫屬化合物（ｃｈａｌｃｏｇｅｎｉｄｅ）裝置及材料 - Google Patents
具有較少的鍺或碲成份的硫屬化合物（ｃｈａｌｃｏｇｅｎｉｄｅ）裝置及材料 Download PDFInfo
- Publication number
- TWI458147B TWI458147B TW095146197A TW95146197A TWI458147B TW I458147 B TWI458147 B TW I458147B TW 095146197 A TW095146197 A TW 095146197A TW 95146197 A TW95146197 A TW 95146197A TW I458147 B TWI458147 B TW I458147B
- Authority
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- Prior art keywords
- state
- resistance
- chalcogenide
- reset
- memory
- Prior art date
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- 150000004770 chalcogenides Chemical class 0.000 title claims description 178
- 239000000463 material Substances 0.000 title claims description 167
- 229910052732 germanium Inorganic materials 0.000 title claims description 26
- 229910052714 tellurium Inorganic materials 0.000 title claims description 19
- 230000002829 reductive effect Effects 0.000 title description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 23
- 150000001786 chalcogen compounds Chemical class 0.000 claims description 18
- 239000000956 alloy Substances 0.000 description 48
- 229910045601 alloy Inorganic materials 0.000 description 48
- 239000000203 mixture Substances 0.000 description 47
- 230000007704 transition Effects 0.000 description 41
- 238000002425 crystallisation Methods 0.000 description 37
- 230000008025 crystallization Effects 0.000 description 37
- 238000000034 method Methods 0.000 description 20
- 230000007246 mechanism Effects 0.000 description 19
- 230000008569 process Effects 0.000 description 19
- 238000009825 accumulation Methods 0.000 description 14
- 230000006870 function Effects 0.000 description 14
- 230000008859 change Effects 0.000 description 12
- 230000007423 decrease Effects 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 10
- 230000009466 transformation Effects 0.000 description 10
- -1 chalcogenide compound Chemical class 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000006911 nucleation Effects 0.000 description 9
- 238000010899 nucleation Methods 0.000 description 9
- 238000004132 cross linking Methods 0.000 description 7
- 239000012782 phase change material Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000008707 rearrangement Effects 0.000 description 7
- 230000006399 behavior Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052798 chalcogen Inorganic materials 0.000 description 4
- 150000001787 chalcogens Chemical class 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000001186 cumulative effect Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000001764 infiltration Methods 0.000 description 3
- 230000008595 infiltration Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003204 osmotic effect Effects 0.000 description 3
- 238000005325 percolation Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000000844 transformation Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000005280 amorphization Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910005900 GeTe Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 210000002569 neuron Anatomy 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
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- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/301,211 US7525117B2 (en) | 2005-08-09 | 2005-12-12 | Chalcogenide devices and materials having reduced germanium or telluruim content |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200737557A TW200737557A (en) | 2007-10-01 |
| TWI458147B true TWI458147B (zh) | 2014-10-21 |
Family
ID=40020772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095146197A TWI458147B (zh) | 2005-12-12 | 2006-12-11 | 具有較少的鍺或碲成份的硫屬化合物（ｃｈａｌｃｏｇｅｎｉｄｅ）裝置及材料 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5520484B2 (enExample) |
| KR (2) | KR101330769B1 (enExample) |
| TW (1) | TWI458147B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105378959A (zh) * | 2013-03-03 | 2016-03-02 | Adesto技术公司 | 可编程的阻抗储存元件和相应的方法 |
| US9564214B2 (en) | 2015-03-13 | 2017-02-07 | Kabushiki Kaisha Toshiba | Memory device |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080042119A1 (en) * | 2005-08-09 | 2008-02-21 | Ovonyx, Inc. | Multi-layered chalcogenide and related devices having enhanced operational characteristics |
| JP5320295B2 (ja) | 2006-11-02 | 2013-10-23 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 金属薄膜のｃｖｄ／ａｌｄに有用なアンチモンおよびゲルマニウム錯体 |
| KR101177284B1 (ko) * | 2007-01-18 | 2012-08-24 | 삼성전자주식회사 | 상변화 물질층과 그 제조방법과 이 방법으로 형성된 상변화물질층을 포함하는 상변화 메모리 소자와 그 제조 및 동작방법 |
| KR101291222B1 (ko) * | 2007-11-29 | 2013-07-31 | 삼성전자주식회사 | 상변화 메모리 소자의 동작 방법 |
| JP4929228B2 (ja) * | 2008-01-23 | 2012-05-09 | 韓國電子通信研究院 | 相変化メモリー素子及びその製造方法 |
| US20090215225A1 (en) | 2008-02-24 | 2009-08-27 | Advanced Technology Materials, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
| WO2009134989A2 (en) | 2008-05-02 | 2009-11-05 | Advanced Technology Materials, Inc. | Antimony compounds useful for deposition of antimony-containing materials |
| CN102484127B (zh) * | 2009-09-04 | 2015-07-15 | 惠普开发有限公司 | 基于混合金属价键化合物的记忆电阻 |
| WO2011119175A1 (en) | 2010-03-26 | 2011-09-29 | Advanced Technology Materials, Inc. | Germanium antimony telluride materials and devices incorporating same |
| WO2011146913A2 (en) | 2010-05-21 | 2011-11-24 | Advanced Technology Materials, Inc. | Germanium antimony telluride materials and devices incorporating same |
| WO2012138615A2 (en) * | 2011-04-03 | 2012-10-11 | Advanced Technology Materials, Inc. | Oxic germanium-antimony-tellurium material and phase change memory comprising same |
| US8946666B2 (en) * | 2011-06-23 | 2015-02-03 | Macronix International Co., Ltd. | Ge-Rich GST-212 phase change memory materials |
| KR102117124B1 (ko) | 2012-04-30 | 2020-05-29 | 엔테그리스, 아이엔씨. | 유전체 물질로 중심-충전된 상 변화 합금을 포함하는 상 변화 메모리 구조체 |
| WO2014070682A1 (en) | 2012-10-30 | 2014-05-08 | Advaned Technology Materials, Inc. | Double self-aligned phase change memory device structure |
| KR101889600B1 (ko) * | 2016-03-31 | 2018-08-17 | 연세대학교 산학협력단 | 비휘발성 메모리 소자 및 이의 제조 방법 |
| JP2017224688A (ja) | 2016-06-14 | 2017-12-21 | ソニー株式会社 | 回路素子、記憶装置、電子機器、回路素子への情報の書き込み方法、および回路素子からの情報の読み出し方法 |
| US20210288250A1 (en) * | 2020-03-13 | 2021-09-16 | International Business Machines Corporation | Phase Change Memory Having Gradual Reset |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4499557A (en) * | 1980-10-28 | 1985-02-12 | Energy Conversion Devices, Inc. | Programmable cell for use in programmable electronic arrays |
| US4876667A (en) * | 1987-06-22 | 1989-10-24 | Energy Conversion Devices, Inc. | Data storage device having a phase change memory medium reversible by direct overwrite |
| US5335219A (en) * | 1991-01-18 | 1994-08-02 | Ovshinsky Stanford R | Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
| US6314014B1 (en) * | 1999-12-16 | 2001-11-06 | Ovonyx, Inc. | Programmable resistance memory arrays with reference cells |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2867701B2 (ja) * | 1989-09-28 | 1999-03-10 | 松下電器産業株式会社 | 光学情報記録媒体の製造方法 |
| US5414271A (en) * | 1991-01-18 | 1995-05-09 | Energy Conversion Devices, Inc. | Electrically erasable memory elements having improved set resistance stability |
| JP3454821B2 (ja) * | 1991-08-19 | 2003-10-06 | エナージー・コンバーション・デバイセス・インコーポレーテッド | 電気的に消去可能な、直接重ね書き可能なマルチビット単セルメモリ素子およびそれらから作製したアレイ |
| DE69322443T2 (de) * | 1992-06-17 | 1999-08-05 | Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka | Optisches Informationsaufzeichnungsmedium |
| KR100465001B1 (ko) * | 1996-06-27 | 2005-06-13 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 가역광정보매체 |
| US6967344B2 (en) * | 2003-03-10 | 2005-11-22 | Energy Conversion Devices, Inc. | Multi-terminal chalcogenide switching devices |
-
2006
- 2006-11-16 KR KR1020087005573A patent/KR101330769B1/ko not_active Expired - Fee Related
- 2006-11-16 JP JP2008545607A patent/JP5520484B2/ja not_active Expired - Fee Related
- 2006-11-16 KR KR1020137015680A patent/KR101501980B1/ko not_active Expired - Fee Related
- 2006-12-11 TW TW095146197A patent/TWI458147B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4499557A (en) * | 1980-10-28 | 1985-02-12 | Energy Conversion Devices, Inc. | Programmable cell for use in programmable electronic arrays |
| US4876667A (en) * | 1987-06-22 | 1989-10-24 | Energy Conversion Devices, Inc. | Data storage device having a phase change memory medium reversible by direct overwrite |
| US5335219A (en) * | 1991-01-18 | 1994-08-02 | Ovshinsky Stanford R | Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
| US6314014B1 (en) * | 1999-12-16 | 2001-11-06 | Ovonyx, Inc. | Programmable resistance memory arrays with reference cells |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105378959A (zh) * | 2013-03-03 | 2016-03-02 | Adesto技术公司 | 可编程的阻抗储存元件和相应的方法 |
| US9564214B2 (en) | 2015-03-13 | 2017-02-07 | Kabushiki Kaisha Toshiba | Memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101330769B1 (ko) | 2013-11-18 |
| JP2009524210A (ja) | 2009-06-25 |
| KR101501980B1 (ko) | 2015-03-18 |
| TW200737557A (en) | 2007-10-01 |
| KR20080080273A (ko) | 2008-09-03 |
| JP5520484B2 (ja) | 2014-06-11 |
| KR20130088175A (ko) | 2013-08-07 |
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| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |