KR101330769B1 - 칼코겐화물 소자 및 감소된 저매늄 또는 텔러륨 함량을갖는 재료 - Google Patents

칼코겐화물 소자 및 감소된 저매늄 또는 텔러륨 함량을갖는 재료 Download PDF

Info

Publication number
KR101330769B1
KR101330769B1 KR1020087005573A KR20087005573A KR101330769B1 KR 101330769 B1 KR101330769 B1 KR 101330769B1 KR 1020087005573 A KR1020087005573 A KR 1020087005573A KR 20087005573 A KR20087005573 A KR 20087005573A KR 101330769 B1 KR101330769 B1 KR 101330769B1
Authority
KR
South Korea
Prior art keywords
state
chalcogenide
resistance
states
reset
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020087005573A
Other languages
English (en)
Korean (ko)
Other versions
KR20080080273A (ko
Inventor
세르게이 에이. 코스틸레브
타일러 로레이
가이 윅커
올로디미르 크주바티즈
Original Assignee
오보닉스, 아이엔씨.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/301,211 external-priority patent/US7525117B2/en
Application filed by 오보닉스, 아이엔씨. filed Critical 오보닉스, 아이엔씨.
Publication of KR20080080273A publication Critical patent/KR20080080273A/ko
Application granted granted Critical
Publication of KR101330769B1 publication Critical patent/KR101330769B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices

Landscapes

  • Semiconductor Memories (AREA)
KR1020087005573A 2005-12-12 2006-11-16 칼코겐화물 소자 및 감소된 저매늄 또는 텔러륨 함량을갖는 재료 Expired - Fee Related KR101330769B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/301,211 2005-12-12
US11/301,211 US7525117B2 (en) 2005-08-09 2005-12-12 Chalcogenide devices and materials having reduced germanium or telluruim content
PCT/US2006/044469 WO2007070218A2 (en) 2005-08-09 2006-11-16 Chalcogenide devices and materials having reduced germanium or telluruim content

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020137015680A Division KR101501980B1 (ko) 2005-12-12 2006-11-16 칼코겐화물 소자 및 감소된 저매늄 또는 텔러륨 함량을 갖는 재료

Publications (2)

Publication Number Publication Date
KR20080080273A KR20080080273A (ko) 2008-09-03
KR101330769B1 true KR101330769B1 (ko) 2013-11-18

Family

ID=40020772

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020087005573A Expired - Fee Related KR101330769B1 (ko) 2005-12-12 2006-11-16 칼코겐화물 소자 및 감소된 저매늄 또는 텔러륨 함량을갖는 재료
KR1020137015680A Expired - Fee Related KR101501980B1 (ko) 2005-12-12 2006-11-16 칼코겐화물 소자 및 감소된 저매늄 또는 텔러륨 함량을 갖는 재료

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020137015680A Expired - Fee Related KR101501980B1 (ko) 2005-12-12 2006-11-16 칼코겐화물 소자 및 감소된 저매늄 또는 텔러륨 함량을 갖는 재료

Country Status (3)

Country Link
JP (1) JP5520484B2 (enExample)
KR (2) KR101330769B1 (enExample)
TW (1) TWI458147B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080042119A1 (en) * 2005-08-09 2008-02-21 Ovonyx, Inc. Multi-layered chalcogenide and related devices having enhanced operational characteristics
JP5320295B2 (ja) 2006-11-02 2013-10-23 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属薄膜のｃｖｄ／ａｌｄに有用なアンチモンおよびゲルマニウム錯体
KR101177284B1 (ko) * 2007-01-18 2012-08-24 삼성전자주식회사 상변화 물질층과 그 제조방법과 이 방법으로 형성된 상변화물질층을 포함하는 상변화 메모리 소자와 그 제조 및 동작방법
KR101291222B1 (ko) * 2007-11-29 2013-07-31 삼성전자주식회사 상변화 메모리 소자의 동작 방법
JP4929228B2 (ja) * 2008-01-23 2012-05-09 韓國電子通信研究院 相変化メモリー素子及びその製造方法
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
WO2009134989A2 (en) 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Antimony compounds useful for deposition of antimony-containing materials
CN102484127B (zh) * 2009-09-04 2015-07-15 惠普开发有限公司 基于混合金属价键化合物的记忆电阻
WO2011119175A1 (en) 2010-03-26 2011-09-29 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
WO2011146913A2 (en) 2010-05-21 2011-11-24 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
WO2012138615A2 (en) * 2011-04-03 2012-10-11 Advanced Technology Materials, Inc. Oxic germanium-antimony-tellurium material and phase change memory comprising same
US8946666B2 (en) * 2011-06-23 2015-02-03 Macronix International Co., Ltd. Ge-Rich GST-212 phase change memory materials
KR102117124B1 (ko) 2012-04-30 2020-05-29 엔테그리스, 아이엔씨. 유전체 물질로 중심-충전된 상 변화 합금을 포함하는 상 변화 메모리 구조체
WO2014070682A1 (en) 2012-10-30 2014-05-08 Advaned Technology Materials, Inc. Double self-aligned phase change memory device structure
WO2014137943A2 (en) * 2013-03-03 2014-09-12 Adesto Technologies Corporation Programmable impedance memory elements and corresponding methods
US9564214B2 (en) * 2015-03-13 2017-02-07 Kabushiki Kaisha Toshiba Memory device
KR101889600B1 (ko) * 2016-03-31 2018-08-17 연세대학교 산학협력단 비휘발성 메모리 소자 및 이의 제조 방법
JP2017224688A (ja) 2016-06-14 2017-12-21 ソニー株式会社 回路素子、記憶装置、電子機器、回路素子への情報の書き込み方法、および回路素子からの情報の読み出し方法
US20210288250A1 (en) * 2020-03-13 2021-09-16 International Business Machines Corporation Phase Change Memory Having Gradual Reset

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5410534A (en) * 1992-06-17 1995-04-25 Matsushita Electric Industrial Co., Ltd. Optical information recording medium
US5414271A (en) * 1991-01-18 1995-05-09 Energy Conversion Devices, Inc. Electrically erasable memory elements having improved set resistance stability
US20040178401A1 (en) * 2003-03-10 2004-09-16 Ovshinsky Stanford R. Multi-terminal chalcogenide switching devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4499557A (en) * 1980-10-28 1985-02-12 Energy Conversion Devices, Inc. Programmable cell for use in programmable electronic arrays
US4876667A (en) * 1987-06-22 1989-10-24 Energy Conversion Devices, Inc. Data storage device having a phase change memory medium reversible by direct overwrite
JP2867701B2 (ja) * 1989-09-28 1999-03-10 松下電器産業株式会社 光学情報記録媒体の製造方法
US5335219A (en) * 1991-01-18 1994-08-02 Ovshinsky Stanford R Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
JP3454821B2 (ja) * 1991-08-19 2003-10-06 エナージー・コンバーション・デバイセス・インコーポレーテッド 電気的に消去可能な、直接重ね書き可能なマルチビット単セルメモリ素子およびそれらから作製したアレイ
KR100465001B1 (ko) * 1996-06-27 2005-06-13 코닌클리케 필립스 일렉트로닉스 엔.브이. 가역광정보매체
US6314014B1 (en) * 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414271A (en) * 1991-01-18 1995-05-09 Energy Conversion Devices, Inc. Electrically erasable memory elements having improved set resistance stability
US5410534A (en) * 1992-06-17 1995-04-25 Matsushita Electric Industrial Co., Ltd. Optical information recording medium
US20040178401A1 (en) * 2003-03-10 2004-09-16 Ovshinsky Stanford R. Multi-terminal chalcogenide switching devices

Also Published As

Publication number Publication date
JP2009524210A (ja) 2009-06-25
KR101501980B1 (ko) 2015-03-18
TWI458147B (zh) 2014-10-21
TW200737557A (en) 2007-10-01
KR20080080273A (ko) 2008-09-03
JP5520484B2 (ja) 2014-06-11
KR20130088175A (ko) 2013-08-07

Similar Documents

Publication Publication Date Title
KR101330769B1 (ko) 칼코겐화물 소자 및 감소된 저매늄 또는 텔러륨 함량을갖는 재료
US7786462B2 (en) Chalcogenide devices exhibiting stable operation from the as-fabricated state
USRE37259E1 (en) Multibit single cell memory element having tapered contact
US7964468B2 (en) Multi-level memory cell having phase change element and asymmetrical thermal boundary
US7525117B2 (en) Chalcogenide devices and materials having reduced germanium or telluruim content
EP0843901B1 (en) Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US7935567B2 (en) Active material devices with containment layer
US8000125B2 (en) Method of programming multi-layer chalcogenide devices
EP0947005B1 (en) Composite memory material comprising a mixture of phase-change memory material and dielectric material
US7919766B2 (en) Method for making self aligning pillar memory cell device
US20050062074A1 (en) Spacer chalcogenide memory method
JP2009524210A5 (enExample)
WO2011030916A1 (ja) 相変化材料および相変化型メモリ素子
KR20070112033A (ko) 도핑된 상 변화 물질을 포함하는 메모리 셀
US7483292B2 (en) Memory cell with separate read and program paths
JP6598166B2 (ja) 相変化材料および相変化型メモリ素子
US8217379B2 (en) Arsenic-containing variable resistance materials
CN112786781B (zh) 超硬Re元素复合Re-Sb-Te相变材料及其应用

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

A107 Divisional application of patent
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20161026

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20171018

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20231113

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20231113