JP2009519193A5 - - Google Patents

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Publication number
JP2009519193A5
JP2009519193A5 JP2008541326A JP2008541326A JP2009519193A5 JP 2009519193 A5 JP2009519193 A5 JP 2009519193A5 JP 2008541326 A JP2008541326 A JP 2008541326A JP 2008541326 A JP2008541326 A JP 2008541326A JP 2009519193 A5 JP2009519193 A5 JP 2009519193A5
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JP
Japan
Prior art keywords
diamond
single crystal
temperature
growth surface
grown
Prior art date
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Application number
JP2008541326A
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English (en)
Japanese (ja)
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JP5269605B2 (ja
JP2009519193A (ja
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Application filed filed Critical
Priority claimed from PCT/US2006/044421 external-priority patent/WO2007059251A2/en
Publication of JP2009519193A publication Critical patent/JP2009519193A/ja
Publication of JP2009519193A5 publication Critical patent/JP2009519193A5/ja
Application granted granted Critical
Publication of JP5269605B2 publication Critical patent/JP5269605B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008541326A 2005-11-15 2006-11-15 速い成長速度で製造される単結晶ｃｖｄダイヤモンドに基づく新たなダイヤモンドの利用／用途 Expired - Fee Related JP5269605B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US72158405P 2005-11-15 2005-11-15
US60/721,584 2005-11-15
PCT/US2006/044421 WO2007059251A2 (en) 2005-11-15 2006-11-15 New diamond uses/applications based on single-crystal cvd diamond produced at rapid growth rate

Publications (3)

Publication Number Publication Date
JP2009519193A JP2009519193A (ja) 2009-05-14
JP2009519193A5 true JP2009519193A5 (https=) 2010-01-14
JP5269605B2 JP5269605B2 (ja) 2013-08-21

Family

ID=38049290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008541326A Expired - Fee Related JP5269605B2 (ja) 2005-11-15 2006-11-15 速い成長速度で製造される単結晶ｃｖｄダイヤモンドに基づく新たなダイヤモンドの利用／用途

Country Status (9)

Country Link
US (2) US20070157875A1 (https=)
EP (1) EP1948853A2 (https=)
JP (1) JP5269605B2 (https=)
AU (1) AU2006315377B2 (https=)
CA (1) CA2629726A1 (https=)
IL (1) IL191402A (https=)
TW (1) TWI410538B (https=)
WO (1) WO2007059251A2 (https=)
ZA (1) ZA200804833B (https=)

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JP5514552B2 (ja) * 2007-01-29 2014-06-04 カーネギー インスチチューション オブ ワシントン 単結晶ｃｖｄダイヤモンドの新規なレーザー用途
KR100890360B1 (ko) * 2008-04-21 2009-03-25 주식회사 탑 엔지니어링 취성 기판의 브레이크 장치
WO2010068419A2 (en) * 2008-11-25 2010-06-17 Carnegie Institution Of Washington Production of single crystal cvd diamond rapid growth rate
WO2012012258A2 (en) * 2010-07-21 2012-01-26 First Solar, Inc. Temperature-adjusted spectrometer
GB201121642D0 (en) 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material
US20150275396A1 (en) * 2014-03-26 2015-10-01 Reinhard Boehler High pressure single crystal diamond anvils
DE102014223301B8 (de) * 2014-11-14 2016-06-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant
US9966161B2 (en) * 2015-09-21 2018-05-08 Uchicago Argonne, Llc Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics
US20170098628A1 (en) * 2015-10-05 2017-04-06 Mediatek Inc. Semiconductor package structure and method for forming the same
GB201620413D0 (en) * 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
EP3727740B1 (en) 2017-12-20 2026-01-14 Flow International Corporation Method of making fluid jet nozzles
BE1026924B1 (nl) * 2018-12-27 2020-07-27 Fsf Pte Ltd Werkwijze voor het identificeren van een synthetische diamant
US12480224B2 (en) 2020-01-17 2025-11-25 Advanced Diamond Holdings, Llc Method for forming diamond having a desirable color by chemical vapor deposition comprising growing a doped diamond layer on a single crystal substrate
IL294826A (en) * 2020-01-20 2022-09-01 M7D Corp A method for growing larger diamonds
CN111437773A (zh) * 2020-04-21 2020-07-24 江苏卓远半导体有限公司 一种微波气体高温结晶金刚石单晶的工艺
CN113755818A (zh) * 2020-06-02 2021-12-07 阿里山钻石科技股份有限公司 钻石制造设备、应用其之钻石制造方法以及钻石检测方法
JP7681850B2 (ja) * 2020-12-10 2025-05-23 国立研究開発法人理化学研究所 ダイヤモンドアンビルとその製造方法及び使用方法
CN114032610B (zh) * 2021-11-18 2024-06-07 济南金刚石科技有限公司 制备单晶金刚石的马赛克拼接装置及沉积方法
CN114941173B (zh) * 2022-05-26 2023-10-10 曲阜师范大学 一种高相干金刚石氮空穴及金刚石压砧的制备与应用
CN115896933A (zh) * 2022-12-06 2023-04-04 郑州磨料磨具磨削研究所有限公司 一种大尺寸金刚石、mpcvd装置及大尺寸金刚石制备方法
CN117448952B (zh) * 2023-10-31 2025-03-11 深圳左文科技有限责任公司 基于边缘镀膜处理减少金刚石晶体生长相互干涉的方法

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