ZA200804833B - New diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate - Google Patents

New diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate

Info

Publication number
ZA200804833B
ZA200804833B ZA200804833A ZA200804833A ZA200804833B ZA 200804833 B ZA200804833 B ZA 200804833B ZA 200804833 A ZA200804833 A ZA 200804833A ZA 200804833 A ZA200804833 A ZA 200804833A ZA 200804833 B ZA200804833 B ZA 200804833B
Authority
ZA
South Africa
Prior art keywords
growth rate
rapid growth
applications based
diamond
crystal cvd
Prior art date
Application number
ZA200804833A
Other languages
English (en)
Inventor
Russell J Hemley
Ho-Kwang Mao
Chih-Shiue Yan
Original Assignee
Carnegie Inst Of Washington
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carnegie Inst Of Washington filed Critical Carnegie Inst Of Washington
Publication of ZA200804833B publication Critical patent/ZA200804833B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Surgical Instruments (AREA)
ZA200804833A 2005-11-15 2008-06-03 New diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate ZA200804833B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72158405P 2005-11-15 2005-11-15

Publications (1)

Publication Number Publication Date
ZA200804833B true ZA200804833B (en) 2009-10-28

Family

ID=38049290

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA200804833A ZA200804833B (en) 2005-11-15 2008-06-03 New diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate

Country Status (9)

Country Link
US (2) US20070157875A1 (https=)
EP (1) EP1948853A2 (https=)
JP (1) JP5269605B2 (https=)
AU (1) AU2006315377B2 (https=)
CA (1) CA2629726A1 (https=)
IL (1) IL191402A (https=)
TW (1) TWI410538B (https=)
WO (1) WO2007059251A2 (https=)
ZA (1) ZA200804833B (https=)

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JP5514552B2 (ja) * 2007-01-29 2014-06-04 カーネギー インスチチューション オブ ワシントン 単結晶ｃｖｄダイヤモンドの新規なレーザー用途
KR100890360B1 (ko) * 2008-04-21 2009-03-25 주식회사 탑 엔지니어링 취성 기판의 브레이크 장치
WO2010068419A2 (en) * 2008-11-25 2010-06-17 Carnegie Institution Of Washington Production of single crystal cvd diamond rapid growth rate
WO2012012258A2 (en) * 2010-07-21 2012-01-26 First Solar, Inc. Temperature-adjusted spectrometer
GB201121642D0 (en) 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material
US20150275396A1 (en) * 2014-03-26 2015-10-01 Reinhard Boehler High pressure single crystal diamond anvils
DE102014223301B8 (de) * 2014-11-14 2016-06-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant
US9966161B2 (en) * 2015-09-21 2018-05-08 Uchicago Argonne, Llc Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics
US20170098628A1 (en) * 2015-10-05 2017-04-06 Mediatek Inc. Semiconductor package structure and method for forming the same
GB201620413D0 (en) * 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
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BE1026924B1 (nl) * 2018-12-27 2020-07-27 Fsf Pte Ltd Werkwijze voor het identificeren van een synthetische diamant
US12480224B2 (en) 2020-01-17 2025-11-25 Advanced Diamond Holdings, Llc Method for forming diamond having a desirable color by chemical vapor deposition comprising growing a doped diamond layer on a single crystal substrate
IL294826A (en) * 2020-01-20 2022-09-01 M7D Corp A method for growing larger diamonds
CN111437773A (zh) * 2020-04-21 2020-07-24 江苏卓远半导体有限公司 一种微波气体高温结晶金刚石单晶的工艺
CN113755818A (zh) * 2020-06-02 2021-12-07 阿里山钻石科技股份有限公司 钻石制造设备、应用其之钻石制造方法以及钻石检测方法
JP7681850B2 (ja) * 2020-12-10 2025-05-23 国立研究開発法人理化学研究所 ダイヤモンドアンビルとその製造方法及び使用方法
CN114032610B (zh) * 2021-11-18 2024-06-07 济南金刚石科技有限公司 制备单晶金刚石的马赛克拼接装置及沉积方法
CN114941173B (zh) * 2022-05-26 2023-10-10 曲阜师范大学 一种高相干金刚石氮空穴及金刚石压砧的制备与应用
CN115896933A (zh) * 2022-12-06 2023-04-04 郑州磨料磨具磨削研究所有限公司 一种大尺寸金刚石、mpcvd装置及大尺寸金刚石制备方法
CN117448952B (zh) * 2023-10-31 2025-03-11 深圳左文科技有限责任公司 基于边缘镀膜处理减少金刚石晶体生长相互干涉的方法

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Also Published As

Publication number Publication date
WO2007059251A9 (en) 2008-01-31
US20100012022A1 (en) 2010-01-21
JP5269605B2 (ja) 2013-08-21
JP2009519193A (ja) 2009-05-14
WO2007059251A3 (en) 2007-12-06
CA2629726A1 (en) 2007-05-24
EP1948853A2 (en) 2008-07-30
IL191402A (en) 2013-05-30
AU2006315377A1 (en) 2007-05-24
WO2007059251A2 (en) 2007-05-24
US7820131B2 (en) 2010-10-26
TWI410538B (zh) 2013-10-01
TW200730674A (en) 2007-08-16
US20070157875A1 (en) 2007-07-12
AU2006315377B2 (en) 2010-10-28

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