JP5269605B2 - 速い成長速度で製造される単結晶ｃｖｄダイヤモンドに基づく新たなダイヤモンドの利用／用途 - Google Patents
速い成長速度で製造される単結晶ｃｖｄダイヤモンドに基づく新たなダイヤモンドの利用／用途 Download PDFInfo
- Publication number
- JP5269605B2 JP5269605B2 JP2008541326A JP2008541326A JP5269605B2 JP 5269605 B2 JP5269605 B2 JP 5269605B2 JP 2008541326 A JP2008541326 A JP 2008541326A JP 2008541326 A JP2008541326 A JP 2008541326A JP 5269605 B2 JP5269605 B2 JP 5269605B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- growth
- single crystal
- cvd
- growth surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010432 diamond Substances 0.000 title claims description 505
- 229910003460 diamond Inorganic materials 0.000 title claims description 470
- 239000013078 crystal Substances 0.000 title claims description 104
- 238000000034 method Methods 0.000 claims description 134
- 230000008569 process Effects 0.000 claims description 94
- 238000005229 chemical vapour deposition Methods 0.000 claims description 63
- 238000000151 deposition Methods 0.000 claims description 53
- 230000008021 deposition Effects 0.000 claims description 53
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 20
- 229910052750 molybdenum Inorganic materials 0.000 claims description 20
- 239000011733 molybdenum Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 14
- 238000010147 laser engraving Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 27
- 239000002826 coolant Substances 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 25
- 239000000463 material Substances 0.000 description 23
- 229910052760 oxygen Inorganic materials 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 239000010437 gem Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 239000000376 reactant Substances 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 229910001751 gemstone Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- UNPLRYRWJLTVAE-UHFFFAOYSA-N Cloperastine hydrochloride Chemical compound Cl.C1=CC(Cl)=CC=C1C(C=1C=CC=CC=1)OCCN1CCCCC1 UNPLRYRWJLTVAE-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 238000000399 optical microscopy Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 2
- 238000005491 wire drawing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000231392 Gymnosiphon Species 0.000 description 1
- 241000078511 Microtome Species 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000002065 inelastic X-ray scattering Methods 0.000 description 1
- 238000004433 infrared transmission spectrum Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000628 photoluminescence spectroscopy Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001869 rapid Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
- Surgical Instruments (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US72158405P | 2005-11-15 | 2005-11-15 | |
| US60/721,584 | 2005-11-15 | ||
| PCT/US2006/044421 WO2007059251A2 (en) | 2005-11-15 | 2006-11-15 | New diamond uses/applications based on single-crystal cvd diamond produced at rapid growth rate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009519193A JP2009519193A (ja) | 2009-05-14 |
| JP2009519193A5 JP2009519193A5 (https=) | 2010-01-14 |
| JP5269605B2 true JP5269605B2 (ja) | 2013-08-21 |
Family
ID=38049290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008541326A Expired - Fee Related JP5269605B2 (ja) | 2005-11-15 | 2006-11-15 | 速い成長速度で製造される単結晶ｃｖｄダイヤモンドに基づく新たなダイヤモンドの利用／用途 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US20070157875A1 (https=) |
| EP (1) | EP1948853A2 (https=) |
| JP (1) | JP5269605B2 (https=) |
| AU (1) | AU2006315377B2 (https=) |
| CA (1) | CA2629726A1 (https=) |
| IL (1) | IL191402A (https=) |
| TW (1) | TWI410538B (https=) |
| WO (1) | WO2007059251A2 (https=) |
| ZA (1) | ZA200804833B (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5514552B2 (ja) * | 2007-01-29 | 2014-06-04 | カーネギー インスチチューション オブ ワシントン | 単結晶ｃｖｄダイヤモンドの新規なレーザー用途 |
| KR100890360B1 (ko) * | 2008-04-21 | 2009-03-25 | 주식회사 탑 엔지니어링 | 취성 기판의 브레이크 장치 |
| WO2010068419A2 (en) * | 2008-11-25 | 2010-06-17 | Carnegie Institution Of Washington | Production of single crystal cvd diamond rapid growth rate |
| WO2012012258A2 (en) * | 2010-07-21 | 2012-01-26 | First Solar, Inc. | Temperature-adjusted spectrometer |
| GB201121642D0 (en) | 2011-12-16 | 2012-01-25 | Element Six Ltd | Single crtstal cvd synthetic diamond material |
| US20150275396A1 (en) * | 2014-03-26 | 2015-10-01 | Reinhard Boehler | High pressure single crystal diamond anvils |
| DE102014223301B8 (de) * | 2014-11-14 | 2016-06-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant |
| US9966161B2 (en) * | 2015-09-21 | 2018-05-08 | Uchicago Argonne, Llc | Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics |
| US20170098628A1 (en) * | 2015-10-05 | 2017-04-06 | Mediatek Inc. | Semiconductor package structure and method for forming the same |
| GB201620413D0 (en) * | 2016-12-01 | 2017-01-18 | Element Six Tech Ltd | Single crystal synthetic diamond material via chemical vapour deposition |
| EP3727740B1 (en) | 2017-12-20 | 2026-01-14 | Flow International Corporation | Method of making fluid jet nozzles |
| BE1026924B1 (nl) * | 2018-12-27 | 2020-07-27 | Fsf Pte Ltd | Werkwijze voor het identificeren van een synthetische diamant |
| US12480224B2 (en) | 2020-01-17 | 2025-11-25 | Advanced Diamond Holdings, Llc | Method for forming diamond having a desirable color by chemical vapor deposition comprising growing a doped diamond layer on a single crystal substrate |
| IL294826A (en) * | 2020-01-20 | 2022-09-01 | M7D Corp | A method for growing larger diamonds |
| CN111437773A (zh) * | 2020-04-21 | 2020-07-24 | 江苏卓远半导体有限公司 | 一种微波气体高温结晶金刚石单晶的工艺 |
| CN113755818A (zh) * | 2020-06-02 | 2021-12-07 | 阿里山钻石科技股份有限公司 | 钻石制造设备、应用其之钻石制造方法以及钻石检测方法 |
| JP7681850B2 (ja) * | 2020-12-10 | 2025-05-23 | 国立研究開発法人理化学研究所 | ダイヤモンドアンビルとその製造方法及び使用方法 |
| CN114032610B (zh) * | 2021-11-18 | 2024-06-07 | 济南金刚石科技有限公司 | 制备单晶金刚石的马赛克拼接装置及沉积方法 |
| CN114941173B (zh) * | 2022-05-26 | 2023-10-10 | 曲阜师范大学 | 一种高相干金刚石氮空穴及金刚石压砧的制备与应用 |
| CN115896933A (zh) * | 2022-12-06 | 2023-04-04 | 郑州磨料磨具磨削研究所有限公司 | 一种大尺寸金刚石、mpcvd装置及大尺寸金刚石制备方法 |
| CN117448952B (zh) * | 2023-10-31 | 2025-03-11 | 深圳左文科技有限责任公司 | 基于边缘镀膜处理减少金刚石晶体生长相互干涉的方法 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4467172A (en) * | 1983-01-03 | 1984-08-21 | Jerry Ehrenwald | Method and apparatus for laser engraving diamonds with permanent identification markings |
| US6007916A (en) * | 1989-04-06 | 1999-12-28 | Sumitomo Electric Industries, Ltd. | Synthetic single crystal diamond for wiring drawing dies and process for producing the same |
| JPH0712485B2 (ja) * | 1989-04-06 | 1995-02-15 | 住友電気工業株式会社 | 線引きダイス用素材および該素材を用いた線引きダイス |
| US5099788A (en) * | 1989-07-05 | 1992-03-31 | Nippon Soken, Inc. | Method and apparatus for forming a diamond film |
| US5209182A (en) * | 1989-12-01 | 1993-05-11 | Kawasaki Steel Corporation | Chemical vapor deposition apparatus for forming thin film |
| US5704976A (en) * | 1990-07-06 | 1998-01-06 | The United States Of America As Represented By The Secretary Of The Navy | High temperature, high rate, epitaxial synthesis of diamond in a laminar plasma |
| US5410125A (en) * | 1990-10-11 | 1995-04-25 | Harry Winston, S.A. | Methods for producing indicia on diamonds |
| US5507629A (en) * | 1994-06-17 | 1996-04-16 | Jarvik; Robert | Artificial hearts with permanent magnet bearings |
| US5932119A (en) * | 1996-01-05 | 1999-08-03 | Lazare Kaplan International, Inc. | Laser marking system |
| ATE228914T1 (de) * | 1996-07-30 | 2002-12-15 | Drukker Internat B V | Verfahren zur herstellung eines schneideinsatzes für schneidwerkzeug |
| AUPP089397A0 (en) * | 1997-12-12 | 1998-01-08 | Silverbrook Research Pty Ltd | Image creation method and apparatus (IJ37) |
| US6582513B1 (en) * | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| AU1348901A (en) | 1999-10-28 | 2001-05-08 | P1 Diamond, Inc. | Improved diamond thermal management components |
| EP1274984B1 (en) * | 2000-04-21 | 2010-01-20 | Carnegie Institution Of Washington | High pressure anvil and optical window |
| DE60135653D1 (de) | 2000-06-15 | 2008-10-16 | Element Six Pty Ltd | Einkristalldiamant hergestellt durch cvd |
| IL138347A (en) * | 2000-09-08 | 2003-09-17 | Sarin Technologies Ltd | Laser marking on diamonds |
| UA81614C2 (ru) * | 2001-11-07 | 2008-01-25 | Карнеги Инститьюшн Ов Вашингтон | Устройство для изготовления алмазов, узел удержания образца (варианты) и способ изготовления алмазов (варианты) |
| EP1466872B1 (en) * | 2001-12-18 | 2008-07-23 | Mitsuboshi Diamond Industrial Co., Ltd. | Holder for tip and method for manufacturing the same, and scribing device and manual cutter that are provided with the holder for tip |
| US6811610B2 (en) * | 2002-06-03 | 2004-11-02 | Diamond Innovations, Inc. | Method of making enhanced CVD diamond |
| GB0220767D0 (en) * | 2002-09-06 | 2002-10-16 | Diamanx Products Ltd | Diamond radiation detector |
| GB0227261D0 (en) * | 2002-11-21 | 2002-12-31 | Element Six Ltd | Optical quality diamond material |
| GB2396249B (en) * | 2002-11-21 | 2005-01-12 | Bookham Technology Plc | Wavelength locker |
| JP4397014B2 (ja) * | 2002-11-26 | 2010-01-13 | 株式会社スギノマシン | 噴流衝合装置 |
| JP2004181591A (ja) * | 2002-12-04 | 2004-07-02 | Sanko Seiki Kk | 単結晶ダイヤモンド切削工具 |
| US20050025886A1 (en) * | 2003-07-14 | 2005-02-03 | Carnegie Institution Of Washington | Annealing single crystal chemical vapor depositon diamonds |
| CA2589299C (en) * | 2004-09-10 | 2014-04-01 | Carnegie Institution Of Washington | Ultratough cvd single crystal diamond and three dimensional growth thereof |
| US7883684B2 (en) * | 2005-05-25 | 2011-02-08 | Carnegie Institution Of Washington | Colorless single-crystal CVD diamond at rapid growth rate |
| WO2007081492A2 (en) | 2006-01-04 | 2007-07-19 | Uab Research Foundation | High growth rate methods of producing high-quality diamonds |
-
2006
- 2006-11-14 TW TW095142086A patent/TWI410538B/zh not_active IP Right Cessation
- 2006-11-15 CA CA002629726A patent/CA2629726A1/en not_active Abandoned
- 2006-11-15 JP JP2008541326A patent/JP5269605B2/ja not_active Expired - Fee Related
- 2006-11-15 AU AU2006315377A patent/AU2006315377B2/en not_active Ceased
- 2006-11-15 WO PCT/US2006/044421 patent/WO2007059251A2/en not_active Ceased
- 2006-11-15 EP EP06837725A patent/EP1948853A2/en not_active Withdrawn
- 2006-11-15 US US11/599,361 patent/US20070157875A1/en not_active Abandoned
-
2008
- 2008-05-13 IL IL191402A patent/IL191402A/en not_active IP Right Cessation
- 2008-06-03 ZA ZA200804833A patent/ZA200804833B/xx unknown
-
2009
- 2009-09-14 US US12/558,878 patent/US7820131B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007059251A9 (en) | 2008-01-31 |
| US20100012022A1 (en) | 2010-01-21 |
| JP2009519193A (ja) | 2009-05-14 |
| WO2007059251A3 (en) | 2007-12-06 |
| CA2629726A1 (en) | 2007-05-24 |
| EP1948853A2 (en) | 2008-07-30 |
| IL191402A (en) | 2013-05-30 |
| AU2006315377A1 (en) | 2007-05-24 |
| WO2007059251A2 (en) | 2007-05-24 |
| US7820131B2 (en) | 2010-10-26 |
| TWI410538B (zh) | 2013-10-01 |
| ZA200804833B (en) | 2009-10-28 |
| TW200730674A (en) | 2007-08-16 |
| US20070157875A1 (en) | 2007-07-12 |
| AU2006315377B2 (en) | 2010-10-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7820131B2 (en) | Diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate | |
| JP5296533B2 (ja) | 高成長速度での無色単結晶ｃｖｄダイヤモンド | |
| AU2002361594B2 (en) | Apparatus and method for diamond production | |
| AU2001281404B2 (en) | System and method for producing synthetic diamond | |
| US20080157096A1 (en) | System and method for producing synthetic diamond | |
| US20070283881A1 (en) | System and method for producing synthetic diamond | |
| US7594968B2 (en) | Ultratough CVD single crystal diamond and three dimensional growth thereof | |
| AU2001281404A1 (en) | System and method for producing synthetic diamond | |
| AU2007234618B2 (en) | Apparatus and Method for Diamond Production | |
| HK1120781A (en) | Colorless single-crystal cvd diamond at rapid growth rate | |
| HK1106486A (en) | Ultratough cvd single crystal diamond and three dimensional growth thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091113 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20091113 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121218 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130315 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130409 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130508 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |