JP5296533B2 - 高成長速度での無色単結晶cvdダイヤモンド - Google Patents
高成長速度での無色単結晶cvdダイヤモンド Download PDFInfo
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- JP5296533B2 JP5296533B2 JP2008513590A JP2008513590A JP5296533B2 JP 5296533 B2 JP5296533 B2 JP 5296533B2 JP 2008513590 A JP2008513590 A JP 2008513590A JP 2008513590 A JP2008513590 A JP 2008513590A JP 5296533 B2 JP5296533 B2 JP 5296533B2
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- diamond
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
- C01B32/26—Preparation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/279—Diamond only control of diamond crystallography
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Description
本発明は、米国科学財団によって授与された認可EAR−0421020の下、政府の支援をもってなされた。政府は本発明において特定の権利を有する。
該当なし。
該当なし。
[1] C. S. Yan, H. K. Mao, W. Li, l. Qian, Y. Zhao, and R. J. Hemley, Ultrahard diamond single-crystals from chemical vapor deposition, Physica Status Solidi, (a) 201:R24-R27 (2004).
[2] C. S. Yan, Y. K. Vohra, H. K. Mao, and R. J. Hemley, Very high growth rate chemical vapor deposition of single-crystal diamond, Proceedings of the National Academy of Science, 99 (20): R25-27 (2002).
[3] J. Isberg, J. Hammersberg, E. Johansson, T. Wikstrom, D. J. Twitchen, A. J. Whitehead, S. E. Coe, and G. A. Scarsbrook, High carrier mobility in single-crystal plasma-deposited diamond, Science, 297:1670-1672 (2002).
[4] A. Chayahara, Y. Mokuno, Y. Horino, Y. Takasu, H. Kato, H. Yoshikawa and N. Fujimori The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD, Diamond & Related Materials, 13, 1954-1958 (2004).
[5]O. A. Williams and R. B. Jackman High growth rate MWPECVD of single crystal diamond, Diamond & Related Materials, 13,557-560 (2004).
[6] S. J. Charles, l. E. Butler, B. N. Feygelson, M. F. Newton, D. l. Carroll, J. W. Steeds, H. Darwish, H. K. Mao, C. S. Yan, and R. J. Hemley, Characterization of nitrogen doped chemical vapor deposited single-crystal diamond before and after high pressure, high temperature annealing, Physica Status Solidi (a):1-13 (2004).
[7] P. M. Martineau, S. C. Lawson, A. J. Taylor, S. J. Quinn, D. J. F. Evans and M. J. Crowder, Identification of synthetic diamond grown using chemical vapor deposition (CVD), Gems & Gemology, vol. 60: 2-25 (2004).
[8] W. Wang, T. Moses, R. C. Linares, J. E. Shigley, M. Hall, and J. E. Bulter Gem-quality synthetic diamonds grown by a chemical vapor deposition (CVD) method, Gems & Gemology, 39: 268-283 (2003).
[9] H. Kitawaki, A. Abduriyim, and M. Okano. (2005) Identification of CVD synthetic Diamond, Gemmological Association of All Japan, Research Laboratory Report (Mar. 15, 2005).
[10] S. Woddring and B. Deljanin, Guide to laboratory created diamond--Growth technology and identification of HPHT & CVD diamonds. EGL USA booklet (2004).
[11] S. J. Harris and A. M. Weiner Effects of oxygen on diamond growth, Appl. Phys. Lett., Vol. 55 No. 21, 2179-2181 (1989).
[12] Y. Liou, A. Inspektor, R. Weimer, D. Knight, and R. Messier, J. Mater. Res. 5, 2305-2312 (1990).
[13] I. Sakaguchi, M. Nishitani-Gamo, K. P. Loh, S. Hishita, H. Haneda and T. Ando, Suppression of surface cracks on (111) homoepitaxial diamond through impurity limination by oxygen addition. Appl. Phys. Lett., 73,2675-2677 (1998).
[14] A. Tallaire, J. Achard, F. Silva, R. S. Sussmann, A. Gicquel, and E. Rzepka, Oxygen plasma pre-treatments for high quality homoepitaxial CVD diamond deposition. Phys. Stat. Sol., (a) 2001, No. 11,2419-2424 (2004).
Claims (20)
- ダイヤモンドの製造方法であって、
i)ダイヤモンドの成長表面の温度を前記ダイヤモンドの成長表面を横断する全ての温度勾配が20℃未満となるように制御すること、および
ii)単結晶ダイヤモンドを、ダイヤモンドの成長表面上でのマイクロ波プラズマ化学蒸着により、成長温度で、H2の単位あたり8%〜20%のCH4およびCH4の単位あたり5〜25%のO2を含む雰囲気を有する被着チャンバ内で成長させることを含み、
前記成長した単結晶ダイヤモンドが立方体のダイヤモンドであって、
N2が前記被着チャンバ内に添加されなく、且つ、
前記ダイヤモンドの成長速度が50μm/時を上回るものである、
前記方法。 - 前記雰囲気が100〜300トールの圧力を有する、請求項1の方法。
- 前記圧力が160〜220トールである、請求項2の方法。
- 前記成長温度が700℃〜1100℃である、請求項1の方法。
- 前記ダイヤモンドが1.2cm厚を上回るまで成長する、請求項1の方法。
- 前記ダイヤモンドが5カラットを上回るまで成長する、請求項1の方法。
- 前記ダイヤモンドが10カラットを上回るまで成長する、請求項1の方法。
- ダイヤモンド成長速度が100μm/時を上回る、請求項1の方法。
- ダイヤモンド種をホルダ内に配置する工程をさらに含む、請求項1の方法。
- 単結晶ダイヤモンドの成長工程の後にダイヤモンドを前記ホルダ内で再配置する工程をさらに含む、請求項9の方法。
- 単結晶ダイヤモンドを成長させながらダイヤモンドを前記ホルダ内で再配置する工程をさらに含む、請求項9の方法。
- 前記ダイヤモンド種が、天然無色Iaダイヤモンド;天然無色IIaダイヤモンド;HPHT合成黄色Ibダイヤモンド;およびSC−CVDダイヤモンドからなる群の一種である、請求項9の方法。
- 前記ダイヤモンド種がSC−CVDダイヤモンドである、請求項12の方法。
- 前記SC−CVDダイヤモンド種が{100}面を有する、請求項13の方法。
- 前記ダイヤモンドの成長が3つの次元に沿う、請求項1の方法。
- 前記ダイヤモンド種が6つの{100}面を有する、請求項14の方法。
- 前記ダイヤモンドが300カラットを上回るまで成長する、請求項16の方法。
- 前記ダイヤモンドが立方体となるように成長する、請求項1の方法。
- 前記立方体のダイヤモンドの各寸法が少なくとも1インチである、請求項1の方法。
- 製造されるダイヤモンドが人造HPHT IIa型ダイヤモンドに対応するUV−VISスペクトルを有する、請求項1の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68416805P | 2005-05-25 | 2005-05-25 | |
US60/684,168 | 2005-05-25 | ||
PCT/US2006/019752 WO2006127611A2 (en) | 2005-05-25 | 2006-05-23 | Colorless single-crystal cvd diamond at rapid growth rate |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008542168A JP2008542168A (ja) | 2008-11-27 |
JP5296533B2 true JP5296533B2 (ja) | 2013-09-25 |
Family
ID=37452695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008513590A Expired - Fee Related JP5296533B2 (ja) | 2005-05-25 | 2006-05-23 | 高成長速度での無色単結晶cvdダイヤモンド |
Country Status (11)
Country | Link |
---|---|
US (1) | US7883684B2 (ja) |
EP (1) | EP1907320A4 (ja) |
JP (1) | JP5296533B2 (ja) |
KR (1) | KR20080044206A (ja) |
CN (1) | CN101198544A (ja) |
AU (1) | AU2006251553B2 (ja) |
CA (1) | CA2608933C (ja) |
RU (1) | RU2398922C2 (ja) |
TW (1) | TWI403622B (ja) |
WO (1) | WO2006127611A2 (ja) |
ZA (1) | ZA200710519B (ja) |
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JP5514552B2 (ja) * | 2007-01-29 | 2014-06-04 | カーネギー インスチチューション オブ ワシントン | 単結晶cvdダイヤモンドの新規なレーザー用途 |
US7776408B2 (en) * | 2007-02-14 | 2010-08-17 | Rajneesh Bhandari | Method and apparatus for producing single crystalline diamonds |
JP5539968B2 (ja) | 2008-05-05 | 2014-07-02 | カーネギー インスチチューション オブ ワシントン | 超靭性の単結晶ホウ素ドープダイヤモンド |
US20150240383A1 (en) * | 2008-06-18 | 2015-08-27 | Iia Technologies Pte. Ltd. | Monocrystalline diamonds and methods of growing the same |
SG157973A1 (en) * | 2008-06-18 | 2010-01-29 | Indian Inst Technology Bombay | Method for growing monocrystalline diamonds |
WO2010068419A2 (en) * | 2008-11-25 | 2010-06-17 | Carnegie Institution Of Washington | Production of single crystal cvd diamond rapid growth rate |
GB2476478A (en) | 2009-12-22 | 2011-06-29 | Element Six Ltd | Chemical vapour deposition diamond synthesis |
US10273598B2 (en) | 2009-12-22 | 2019-04-30 | Element Six Technologies Limited | Synthetic CVD diamond |
TW201204863A (en) * | 2010-05-17 | 2012-02-01 | Carnegie Inst Of Washington | Production of large, high purity single crystal CVD diamond |
SG179318A1 (en) * | 2010-09-27 | 2012-04-27 | Gemesis Company S Pte Ltd | Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system |
GB201021860D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for diamond synthesis |
GB201021865D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201021913D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave plasma reactors and substrates for synthetic diamond manufacture |
GB201021855D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave power delivery system for plasma reactors |
GB2486778B (en) | 2010-12-23 | 2013-10-23 | Element Six Ltd | Controlling doping of synthetic diamond material |
GB201021870D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201021853D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201121642D0 (en) | 2011-12-16 | 2012-01-25 | Element Six Ltd | Single crtstal cvd synthetic diamond material |
US20160333497A1 (en) * | 2012-08-30 | 2016-11-17 | Devi Shanker Misra | Apparatus and Method of Producing Diamond and Performing Real Time In Situ Analysis |
SG11201504017WA (en) * | 2012-11-21 | 2015-06-29 | Nat Oilwell Dht Lp | Fixed cutter drill bit cutter elements including hard cutting tables made from cvd synthetic diamonds |
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US9966161B2 (en) * | 2015-09-21 | 2018-05-08 | Uchicago Argonne, Llc | Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics |
SG11201805526PA (en) * | 2016-01-22 | 2018-08-30 | Sumitomo Electric Industries | Single-crystal diamond, method for manufacturing single-crystal diamond, and chemical vapor deposition device used in same |
CN106835274A (zh) * | 2017-01-23 | 2017-06-13 | 中国科学院半导体研究所 | 异质外延金刚石及其制备方法 |
CN108251892B (zh) * | 2018-02-26 | 2021-03-23 | 湖北碳六科技有限公司 | 激光增强等离子体cvd制备单晶金刚石装置及其方法 |
CN108315817B (zh) * | 2018-04-19 | 2019-06-25 | 武汉大学 | 高效大尺寸单晶金刚石的生长方法和装置 |
GB201807787D0 (en) * | 2018-05-14 | 2018-06-27 | Element Six Tech Ltd | Polycrystalline chemical vapour deposition synthetic diamond material |
GB201918883D0 (en) * | 2019-12-19 | 2020-02-05 | Element Six Tech Ltd | Method for producing chemical vapour deposition diamond |
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-
2006
- 2006-05-23 WO PCT/US2006/019752 patent/WO2006127611A2/en active Application Filing
- 2006-05-23 RU RU2007148460/15A patent/RU2398922C2/ru not_active IP Right Cessation
- 2006-05-23 EP EP06770854A patent/EP1907320A4/en not_active Withdrawn
- 2006-05-23 KR KR1020077030139A patent/KR20080044206A/ko not_active Application Discontinuation
- 2006-05-23 AU AU2006251553A patent/AU2006251553B2/en not_active Ceased
- 2006-05-23 JP JP2008513590A patent/JP5296533B2/ja not_active Expired - Fee Related
- 2006-05-23 US US11/438,260 patent/US7883684B2/en active Active
- 2006-05-23 CA CA2608933A patent/CA2608933C/en not_active Expired - Fee Related
- 2006-05-23 CN CNA2006800184028A patent/CN101198544A/zh active Pending
- 2006-05-24 TW TW095118474A patent/TWI403622B/zh not_active IP Right Cessation
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2007
- 2007-12-04 ZA ZA200710519A patent/ZA200710519B/en unknown
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EP1907320A4 (en) | 2010-05-05 |
RU2007148460A (ru) | 2009-06-27 |
WO2006127611A3 (en) | 2007-10-04 |
JP2008542168A (ja) | 2008-11-27 |
RU2398922C2 (ru) | 2010-09-10 |
CA2608933C (en) | 2014-02-04 |
AU2006251553A1 (en) | 2006-11-30 |
AU2006251553B2 (en) | 2011-09-08 |
TW200741041A (en) | 2007-11-01 |
KR20080044206A (ko) | 2008-05-20 |
WO2006127611A2 (en) | 2006-11-30 |
CN101198544A (zh) | 2008-06-11 |
EP1907320A2 (en) | 2008-04-09 |
US7883684B2 (en) | 2011-02-08 |
CA2608933A1 (en) | 2006-11-30 |
TWI403622B (zh) | 2013-08-01 |
US20070196263A1 (en) | 2007-08-23 |
ZA200710519B (en) | 2008-07-30 |
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