TW200735183A - Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate - Google Patents

Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate

Info

Publication number
TW200735183A
TW200735183A TW095120735A TW95120735A TW200735183A TW 200735183 A TW200735183 A TW 200735183A TW 095120735 A TW095120735 A TW 095120735A TW 95120735 A TW95120735 A TW 95120735A TW 200735183 A TW200735183 A TW 200735183A
Authority
TW
Taiwan
Prior art keywords
carbide layer
silicon substrate
production
semiconductor device
silicon carbide
Prior art date
Application number
TW095120735A
Other languages
Chinese (zh)
Other versions
TWI305935B (en
Inventor
Takashi Udagawa
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200735183A publication Critical patent/TW200735183A/en
Application granted granted Critical
Publication of TWI305935B publication Critical patent/TWI305935B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

Abstract

A method for producing a silicon carbide layer on a surface of a silicon substrate includes the step of irradiating the surface of the silicon substrate heated in a high vacuum at a temperature in a range of from 500 DEG C to 1050 DEG C with a hydrocarbon-based gas as well as an electron beam to form a cubic silicon carbide layer on the silicon substrate surface.
TW095120735A 2005-06-14 2006-06-12 Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate TWI305935B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005173209A JP4897244B2 (en) 2005-06-14 2005-06-14 Silicon carbide layer manufacturing method, gallium nitride based semiconductor device, and silicon substrate

Publications (2)

Publication Number Publication Date
TW200735183A true TW200735183A (en) 2007-09-16
TWI305935B TWI305935B (en) 2009-02-01

Family

ID=37647208

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095120735A TWI305935B (en) 2005-06-14 2006-06-12 Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate

Country Status (4)

Country Link
JP (1) JP4897244B2 (en)
KR (1) KR100939673B1 (en)
CN (1) CN101203940B (en)
TW (1) TWI305935B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI730516B (en) * 2018-12-12 2021-06-11 日商闊斯泰股份有限公司 Nitride semiconductor substrate and nitride semiconductor device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009153857A1 (en) 2008-06-17 2009-12-23 富士通株式会社 Semiconductor device and method for manufacturing the same
JP5693946B2 (en) * 2010-03-29 2015-04-01 エア・ウォーター株式会社 Method for producing single crystal 3C-SiC substrate
CN109273405B (en) * 2017-07-18 2021-06-08 上海新昇半导体科技有限公司 Semiconductor device, manufacturing method thereof and electronic device
JP7023882B2 (en) * 2019-02-04 2022-02-22 株式会社東芝 Semiconductor device manufacturing method, substrate manufacturing method, semiconductor device, substrate, and substrate manufacturing device
JP7420108B2 (en) * 2021-04-08 2024-01-23 信越半導体株式会社 Method for manufacturing nitride semiconductor wafers
JP7400789B2 (en) * 2021-10-01 2023-12-19 信越半導体株式会社 Method for manufacturing nitride semiconductor wafer, and nitride semiconductor wafer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03173418A (en) * 1989-12-01 1991-07-26 Nec Corp Modification of surface and surface modifying device
JPH0524999A (en) * 1991-07-16 1993-02-02 Matsushita Electric Ind Co Ltd Production of silicon carbide thin film
US5492752A (en) * 1992-12-07 1996-02-20 Oregon Graduate Institute Of Science And Technology Substrates for the growth of 3C-silicon carbide
JP3421672B2 (en) * 1998-01-16 2003-06-30 学校法人立命館 Method for producing crystalline thin film
JP2002093725A (en) * 2000-09-20 2002-03-29 Toshiba Corp Method of treating surface and method of manufacturing semiconductor device
JP5013238B2 (en) * 2001-09-11 2012-08-29 信越半導体株式会社 Semiconductor multilayer structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI730516B (en) * 2018-12-12 2021-06-11 日商闊斯泰股份有限公司 Nitride semiconductor substrate and nitride semiconductor device

Also Published As

Publication number Publication date
KR20080012996A (en) 2008-02-12
JP2006351649A (en) 2006-12-28
CN101203940A (en) 2008-06-18
KR100939673B1 (en) 2010-02-03
JP4897244B2 (en) 2012-03-14
TWI305935B (en) 2009-02-01
CN101203940B (en) 2010-11-03

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees