JP2009514238A5 - - Google Patents
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- JP2009514238A5 JP2009514238A5 JP2008538171A JP2008538171A JP2009514238A5 JP 2009514238 A5 JP2009514238 A5 JP 2009514238A5 JP 2008538171 A JP2008538171 A JP 2008538171A JP 2008538171 A JP2008538171 A JP 2008538171A JP 2009514238 A5 JP2009514238 A5 JP 2009514238A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- range
- depositing
- silicide layer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000000034 method Methods 0.000 claims 21
- 229910052751 metal Inorganic materials 0.000 claims 15
- 239000002184 metal Substances 0.000 claims 15
- 238000000151 deposition Methods 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 12
- 229910021332 silicide Inorganic materials 0.000 claims 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 11
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical group CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims 5
- 229910017052 cobalt Inorganic materials 0.000 claims 5
- 239000010941 cobalt Substances 0.000 claims 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 5
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 5
- 229910052721 tungsten Inorganic materials 0.000 claims 5
- 239000010937 tungsten Substances 0.000 claims 5
- 230000008021 deposition Effects 0.000 claims 4
- -1 metal complex compound Chemical class 0.000 claims 4
- 239000002904 solvent Substances 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 3
- 239000007769 metal material Substances 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims 2
- 229910001080 W alloy Inorganic materials 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- HOMQMIYUSVQSHM-UHFFFAOYSA-N cycloocta-1,3-diene;nickel Chemical compound [Ni].C1CCC=CC=CC1.C1CCC=CC=CC1 HOMQMIYUSVQSHM-UHFFFAOYSA-N 0.000 claims 2
- 238000005137 deposition process Methods 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 150000003376 silicon Chemical class 0.000 claims 1
- 229910052990 silicon hydride Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73162405P | 2005-10-28 | 2005-10-28 | |
| US11/385,041 US20070099806A1 (en) | 2005-10-28 | 2006-03-20 | Composition and method for selectively removing native oxide from silicon-containing surfaces |
| PCT/US2006/060273 WO2007111679A2 (en) | 2005-10-28 | 2006-10-26 | Method of selectively depositing a thin film material at a semiconductor interface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009514238A JP2009514238A (ja) | 2009-04-02 |
| JP2009514238A5 true JP2009514238A5 (enExample) | 2009-12-03 |
Family
ID=37997204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008538171A Pending JP2009514238A (ja) | 2005-10-28 | 2006-10-26 | 半導体接合部に薄膜物質を選択的に堆積させる方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US20070099806A1 (enExample) |
| JP (1) | JP2009514238A (enExample) |
| WO (1) | WO2007111679A2 (enExample) |
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| JP4390616B2 (ja) * | 2004-04-27 | 2009-12-24 | Ｎｅｃエレクトロニクス株式会社 | 洗浄液及び半導体装置の製造方法 |
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-
2006
- 2006-03-20 US US11/385,041 patent/US20070099806A1/en not_active Abandoned
- 2006-10-26 JP JP2008538171A patent/JP2009514238A/ja active Pending
- 2006-10-26 WO PCT/US2006/060273 patent/WO2007111679A2/en not_active Ceased
- 2006-10-27 US US11/553,878 patent/US20070108404A1/en not_active Abandoned
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