WO2010081661A2 - Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level - Google Patents
Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level Download PDFInfo
- Publication number
- WO2010081661A2 WO2010081661A2 PCT/EP2010/000076 EP2010000076W WO2010081661A2 WO 2010081661 A2 WO2010081661 A2 WO 2010081661A2 EP 2010000076 W EP2010000076 W EP 2010000076W WO 2010081661 A2 WO2010081661 A2 WO 2010081661A2
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- WIPO (PCT)
- Prior art keywords
- solution
- boe
- water
- oxidizer
- weight
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 47
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000007800 oxidant agent Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 230000002378 acidificating effect Effects 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- -1 fluoride ions Chemical class 0.000 claims abstract description 31
- 239000005360 phosphosilicate glass Substances 0.000 claims abstract description 17
- 239000002738 chelating agent Substances 0.000 claims abstract description 14
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims abstract description 11
- 239000005388 borosilicate glass Substances 0.000 claims abstract description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910021529 ammonia Inorganic materials 0.000 claims abstract 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 24
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 20
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 claims description 12
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 11
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 9
- 239000000908 ammonium hydroxide Substances 0.000 claims description 9
- 239000004094 surface-active agent Substances 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 description 69
- 239000000243 solution Substances 0.000 description 67
- 238000004519 manufacturing process Methods 0.000 description 10
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 235000011114 ammonium hydroxide Nutrition 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000010304 firing Methods 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
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- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IDQBJILTOGBZCR-UHFFFAOYSA-N 1-butoxypropan-1-ol Chemical compound CCCCOC(O)CC IDQBJILTOGBZCR-UHFFFAOYSA-N 0.000 description 2
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- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- LLYCMZGLHLKPPU-UHFFFAOYSA-M perbromate Chemical compound [O-]Br(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-M 0.000 description 2
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- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- QBYIENPQHBMVBV-HFEGYEGKSA-N (2R)-2-hydroxy-2-phenylacetic acid Chemical compound O[C@@H](C(O)=O)c1ccccc1.O[C@@H](C(O)=O)c1ccccc1 QBYIENPQHBMVBV-HFEGYEGKSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 1
- NAOLWIGVYRIGTP-UHFFFAOYSA-N 1,3,5-trihydroxyanthracene-9,10-dione Chemical compound C1=CC(O)=C2C(=O)C3=CC(O)=CC(O)=C3C(=O)C2=C1 NAOLWIGVYRIGTP-UHFFFAOYSA-N 0.000 description 1
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- XNCSCQSQSGDGES-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)C(C)CN(CC(O)=O)CC(O)=O XNCSCQSQSGDGES-UHFFFAOYSA-N 0.000 description 1
- ZIMXAFGAUMQPMG-UHFFFAOYSA-N 2-[4-[bis(carboxymethyl)amino]butyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCCCN(CC(O)=O)CC(O)=O ZIMXAFGAUMQPMG-UHFFFAOYSA-N 0.000 description 1
- XWSGEVNYFYKXCP-UHFFFAOYSA-N 2-[carboxymethyl(methyl)amino]acetic acid Chemical compound OC(=O)CN(C)CC(O)=O XWSGEVNYFYKXCP-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- ZFDNAYFXBJPPEB-UHFFFAOYSA-M 2-hydroxyethyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCO ZFDNAYFXBJPPEB-UHFFFAOYSA-M 0.000 description 1
- KWYJDIUEHHCHCZ-UHFFFAOYSA-N 3-[2-[bis(2-carboxyethyl)amino]ethyl-(2-carboxyethyl)amino]propanoic acid Chemical compound OC(=O)CCN(CCC(O)=O)CCN(CCC(O)=O)CCC(O)=O KWYJDIUEHHCHCZ-UHFFFAOYSA-N 0.000 description 1
- RPQFOXCKLIALTB-UHFFFAOYSA-M 3-hydroxybutyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC(O)CC[N+](C)(C)C RPQFOXCKLIALTB-UHFFFAOYSA-M 0.000 description 1
- AJEUSSNTTSVFIZ-UHFFFAOYSA-M 3-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCCO AJEUSSNTTSVFIZ-UHFFFAOYSA-M 0.000 description 1
- YZHQBWDNOANICQ-UHFFFAOYSA-M 4-hydroxybutyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCCCO YZHQBWDNOANICQ-UHFFFAOYSA-M 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical class [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- IWYDHOAUDWTVEP-UHFFFAOYSA-N R-2-phenyl-2-hydroxyacetic acid Natural products OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001346 alkyl aryl ethers Chemical class 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- RKTGAWJWCNLSFX-UHFFFAOYSA-M bis(2-hydroxyethyl)-dimethylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(C)CCO RKTGAWJWCNLSFX-UHFFFAOYSA-M 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical class OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- KFJNCGCKGILQMF-UHFFFAOYSA-M dibutyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(C)CCCC KFJNCGCKGILQMF-UHFFFAOYSA-M 0.000 description 1
- JQDCIBMGKCMHQV-UHFFFAOYSA-M diethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CC JQDCIBMGKCMHQV-UHFFFAOYSA-M 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 1
- IIAPBJPXNIYANW-UHFFFAOYSA-M ethyl-(2-hydroxyethyl)-dimethylazanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CCO IIAPBJPXNIYANW-UHFFFAOYSA-M 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- HPWUYZIJILJHNG-UHFFFAOYSA-M tributyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](CCO)(CCCC)CCCC HPWUYZIJILJHNG-UHFFFAOYSA-M 0.000 description 1
- FYFNFZLMMGXBMT-UHFFFAOYSA-M tributyl(ethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](CC)(CCCC)CCCC FYFNFZLMMGXBMT-UHFFFAOYSA-M 0.000 description 1
- QVOFCQBZXGLNAA-UHFFFAOYSA-M tributyl(methyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(CCCC)CCCC QVOFCQBZXGLNAA-UHFFFAOYSA-M 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- JAJRRCSBKZOLPA-UHFFFAOYSA-M triethyl(methyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(CC)CC JAJRRCSBKZOLPA-UHFFFAOYSA-M 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- This invention relates to an acidic treatment composition and to the use of such acidic treatment composition in a method of treating a thin film amorphous or mono- or multi- crystalline silicon wafer substrate for use in a photovoltaic cell, the wafer substrate having at least one of a pn- or np junction and a partial phosphosilicate or borosilicate glass layer on a top surface of the wafer substrate, to provide increased sheet resistance of a wafer and/or power density a photovoltaic cell made from said wafer.
- Silicon-based solar cells require several processing steps in order to be able to convert incident light into current.
- One of these steps involves the generation of an emitter, which is most commonly accomplished by the thermal drive-in of phosphorous into a boron-doped silicon wafer.
- This process results in the generation of a so-called dead layer, which gives high recombination rates of the generated charges and is detrimental to the efficiency and power density level of the solar cell.
- this process produces a so-called phosphosilicate glass (PSG) layer on top of the wafer, which contains phosphorous, silicon and oxygen and this PSG layer has to be removed in order to be able to proceed in cell manufacture.
- PSG phosphosilicate glass
- the phosphorous depth profile shows a plateau of high- concentration extending from the surface to several tens or hundreds of nanometers deep, depending on process conditions.
- the concentration near the surface would be high (i.e. 10 20'21 atoms/cm 3 ) in order to be able to contact the electrodes well.
- a principal goal of multi crystalline photovoltaic cell manufacturers is to reduce the cost of the energy delivered by their solar cells. This can generally be accomplished in one of two ways, either reduction in overall cell manufacturing costs and/or improvement in solar cell conversion efficiency.
- current manufacturing processes apply a post-emitter etch after the phosphorous diffusion, which removes the PSG layer by dipping the wafer in HF.
- Previous experiments have shown that an additional treatment after the HF-dip can result in higher cell efficiencies, up to 0.3% absolute.
- a product of Mallinckrodt Baker, Inc. namely product PV- 160, is used in this additional step.
- use of this product generally requires processing of the wafer substrate in a heated bath (7O 0 C or higher) of the product.
- compositions be available that are capable of producing higher power density in solar cells in equal or lesser processing times and at reduced temperatures by improved etching of remnants of the PSG layer as well as deeper etching of the dead layer, compared with results obtained with the currently used PV- 160 product.
- the invention provides a method of treating a thin film amorphous or mono- or multi- crystalline silicon wafer substrate for use in a photovoltaic cell to increase at least one of (a) the sheet resistance of the wafer and (b) the power density of the photovoltaic cell made from the wafer, the wafer substrate having a pn- or np junction and/or partial phosphosilicate and/or borosilicate glass layer on a top surface of the wafer substrate, the treatment method comprising contacting the wafer substrate with an acidic treatment solution for a time and at a temperature sufficient to increase at least one of (a) the sheet resistance of the wafer and (b) power density of the photovoltaic cell made from said wafer, the solution comprising: a buffered oxide etch (BOE) solution of: from about 0.1 to about 20% by weight of at least one tetraalkylammonium hydroxide, from about 0.1 to about 5% by weight acetic acid, from about
- BOE buffered oxide
- the treatment can increase either the sheet resistance of the wafer or the power density of the photovoltaic cell it preferably increases both. Additionally, the treatment may also increase the efficiency of a photovoltaic cell made from this wafer.
- an acidic treatment solution for treating a thin film amorphous or mono- or multi- crystalline silicon wafer substrates for use in a photovoltaic cell to increase at least one of (a) the sheet resistance of the wafer and (b) the power density level of the photovoltaic cell made from said wafer, the wafer substrate having a pn- or np junction and/or partial phosphosilicate and/or borosilicate glass layer on a top surface of the wafer substrate, wherein the acidic treatment solution comprises a mixture of: a buffered oxide etch (BOE) solution of: from about 0.1 to about 20% by weight of at least one tetraalkylammonium hydroxide, from about 0.1 to about 5 % by weight acetic acid, from about 0.1 to about 5% by weight of at least one non-ionic surfactant, about 0.1 to about 5% by weight of at least one metal chelating agent, from about 0.1 to about 20%
- BOE buffered oxide etch
- the wafer with the emitter is inclusive of both p- and n- source silicon types.
- the amount by weight of the teraalkylammonium chloride in the BOE solution is preferably 0.5 to 15%, more preferably 1 to 10%, still more preferably
- the amount by weight of acetic acid is preferably 0.5 to 4%, more preferably 0.8 to 3%, still more preferably 1 to 2%, most preferably 1 to 1.5%, and especially 1-2%.
- the amount by weight is preferably 0.2 to 4%, more preferably 0.3 to 2%, still more preferably 0.5 to 1%, most preferably 0.7 to 0.9%, and especially 0.8%.
- the amount by weight is preferably 0.2 to 4%, more preferably
- the amount by weight is preferably 0.2 to 10%, more preferably 0.3 to 5%, still more preferably 0.5 to 2%, most preferably 0.6 to 1%, and especially 0.8%.
- the amount by weight is preferably 1 to 10%, more preferably 0.5 to 5%, still more preferably 1.0 to 3%, most preferably 1.5 to 2.5%, and especially 2.1%.
- the treatment can increase either the sheet resistance of the wafer or the power density of a photovoltaic cell made from said wafer it preferably increases both. Additionally, the treatment may also increase the efficiency of a photovoltaic cell made from this wafer.
- the treatment occurs at a temperature of from about 20° to less than 70° C.
- the BOE solution has a pH of from about 3 to less than 7, preferably a pH of from about 3 to about 6, and more preferably a pH of from about 4.3 to about 5.
- the oxidizer comprises hydrogen peroxide.
- the oxidizer is in aqueous solution, (0.01% to 50%, more preferably 0.1% to 30%, and even more preferably about 30% aqueous solution) of water and hydrogen peroxide in any suitable ratio, but generally in a ratio of from about 6/10.2 to about
- the BOE solution comprises tetramethylammonium hydroxide as the tetraalkylammonium hydroxide, 3,5-dimethylhex-l - yn-3-ol as the at least one surfactant, and EDTA as the at least one metal chelating agent, and the oxidizer solution comprises hydrogen peroxide and water.
- the BOE solution comprises about 3.1% tetramethylammonium hydroxide, about 1.2% acetic acid, about 2.1% HF, about
- the BOE solution is mixed with oxidizer solution in a ratio of BOE/water/hydrogen peroxide of about 1/6/0.2. In another preferred embodiment of this invention the BOE solution is mixed with oxidizer solution in a ratio of BOE/water/hydrogen peroxide of about 1/6/0.8. In another preferred embodiment of this invention the BOE solution is mixed with oxidizer solution in a ratio of
- the embodiments comprise one or more of the combinations of the aforementioned preferred embodiments.
- the current invention can be used at a processing temperature of from about 20°C to about 40°C, which is lower than the current industry standard of 7O 0 C.
- BOE buffered oxide etch
- the treatment can increase either the sheet resistance of the wafer or the power density of a photovoltaic cell made from said wafer it preferably increases both. Additionally, the treatment may also increase the efficiency of a photovoltaic cell made from this wafer.
- the invention provides a solution for treating a thin film amorphous or mono- or multi- crystalline silicon wafer substrates for use in a photovoltaic cell to increase at least one of (a) the sheet resistance of the wafer and (b) the power density level of the photovoltaic cell made from said wafer, the wafer substrate having a pn- or np junction and/or partial phosphosilicate and/or borosilicate glass layer on a top surface of the wafer substrate, wherein the acidic treatment solution comprises a mixture of: a buffered oxide etch (BOE) solution of: from about 0.1 to about 20% by weight of at least one tetraalkylammonium hydroxide, from about 0.1 to about 5 % by weight acetic acid, from about 0.1 to about 5% by weight of at least one non-ionic surfactant, about 0.1 to about 5% by weight of at least one metal chelating agent, from about 0.1 to about 20% by weight of a metal free
- BOE buffere
- the treatment can increase either the sheet resistance of the wafer or the power density of the photovoltaic cell made from said wafer, it preferably increases both. Additionally, the treatment may also increase the efficiency of a photovoltaic cell made from this wafer.
- the step employing the acidic treatment solution is utilized on the photovoltaic cell wafer substrate after the phosphosilicate or borosilicate glass removal (incomplete removal) with HF and just prior to another HF dip and subsequent AntiReflective Coating (ARC), such as for example SiNxH deposition.
- the process comprises exposing the wafer substrate to the acidic treatment solution, such as by immersing the wafer substrate in a heated bath of the solution for a time and at a temperature sufficient to increase at least one of (a) the sheet resistance of the wafer and (b) the power density of the photovoltaic cell made from said wafer.
- the contact of the wafer substrate with the acidic treatment solution will generally be for a period of from about 0.01 to about 20 minutes, preferably from about 0.5 to about 5 minutes, and more preferably for about 1 minute.
- the temperature of the solution will generally be of from about 20° C to less than about 70° C, preferably from about 20° C to about 60° C, more preferably from about 20° to about 40° C, even more preferably at about 4O 0 C.
- tetraalkylammonium hydroxides or salts of the formula [(R) 4 N + Jp [X "q ], where each R is independently a substituted or unsubstituted alkyl, preferably alkyl of from 1 to 22, and more preferably 1 to 6, most preferably 1 carbon; and X OH or a suitable salt anion, such as carbonate and the like; p and q are equal and are integer of from 1 to 3.
- p and q are equal and are integer of from 1 to 3.
- the most preferable of these are tetramethyl ammonium hydroxide and trimethyl-2-hydroxyethyl ammonium hydroxide (choline).
- Examples of other usable quaternary ammonium hydroxides include: trimethyl-3- hydroxypropyl ammonium hydroxide, trimethyl-3-hydroxybutyl ammonium hydroxide, trimethyl-4-hydroxybutyl ammonium hydroxide, triethyl-2-hydroxyethyl ammonium hydroxide, tripropyl-2-hydroxyethyl ammonium hydroxide, tributyl-2-hydroxyethyl ammonium hydroxide, dimethylethyl-2-hydroxyethyl ammonium hydroxide, dimethyldi(2-hydroxyethyl) ammonium hydroxide, monomethyltri(2-hydroxyethyl) ammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, tetrabutyl ammonium hydroxide, monomethyltriethyl ammonium hydroxide, monomethyltripopyl ammonium hydroxide, monomethyltributyl ammoni
- the metal free source of ammonium ions can be any suitable metal free ammonium salt, such as for example, ammonium hydroxide, ammonium fluoride, ammonium chloride, ammonium nitrate and the like, but is preferably ammonium hydroxide.
- the metal free source of fluoride ions can be any suitable metal free fluoride compound, such as for example, hydrogen fluoride, ammonium fluoride, quaternary ammonium fluorides such as tetramethylammonium fluoride.
- the metal free source of fluoride ions is HF.
- both the ammonium ions and the fluoride ions may be provided by one compound, namely ammonium fluoride.
- the acidic treatment compositions of this invention may contain any suitable nonionic surfactant.
- suitable nonionic surfactant such as alkynol surfactants, fluorinated surfactants such as fluorinated alkyl alkoxylates such as Fluorad® FC-171, fluorinated alkylesters such as FC-430 and FC-431 and fluorinated polyoxyethylene alkanols such as Fluorad® FC- 170C, aliphatic acid esters of polyhydric alcohols, polyoxyethylene monoalkyl ethers, polyoxyethylene diols, siloxane type surfactants and alkylene glycol monoalkyl ethers such as butoxypropanol.
- low foaming nonionic surfactants such as alkynol surfactants, fluorinated surfactants such as fluorinated alkyl alkoxylates such as Fluorad® FC-171, fluorinated alkylesters such as FC-430 and FC-431 and fluorinated polyoxyethylene alkan
- nonionic surfactants in the alkaline treatment compositions of this invention are alkynol surfactants, especially 3,5-dimethylhex-l-yn-3-ol (Surfynol®-61) or any other Surfynol® surfactant, fluorinated alkyl polyoxyethylene ethanols, especially Fluorad® FC- 170C and alkylene glycol monoalkyl ethers, especially butoxypropanol.
- alkynol surfactants especially 3,5-dimethylhex-l-yn-3-ol (Surfynol®-61) or any other Surfynol® surfactant
- fluorinated alkyl polyoxyethylene ethanols especially Fluorad® FC- 170C and alkylene glycol monoalkyl ethers, especially butoxypropanol.
- Any suitable metal chelating agents to increase the capacity of the formulation to retain metals in solution may be employed in the acidic treatment compositions of this invention.
- Typical examples of chelating agents for this purpose are the following organic acids and their salts: ethylenediaminetetraacetic acid (EDTA), butylenediaminetetraacetic acid, cyclohexane- 1 ,2-diaminetetraacetic acid (CyDTA) diethylenetriaminepentaacetic acid, ethylenediaminetetrapropionic acid, (hydroxyethyl)ethylenediaminetriacetic acid (HEDTA) , methyliminodiacetic acid, propylenediaminetetraacetic acid, nitrolotriacetic acid (NTA), citric acid, tartaric acid, gluconic acid, saccharic acid, glyceric acid, oxalic acid, phthalic acid, maleic acid, mandelic acid, malonic acid, lactic acid, salicylic acid,
- Any suitable oxidizing agent may be employed, such as, for example, oxidizing anions, such as, for example, peroxides, nitric acid and its salts and nitrates, persulfate, periodate, perbromate, perchlorate, iodate, bromate, and chlorate salts of ammonium.
- oxidizing anions such as, for example, peroxides, nitric acid and its salts and nitrates, persulfate, periodate, perbromate, perchlorate, iodate, bromate, and chlorate salts of ammonium.
- peroxides and particularly hydrogen peroxide are particularly hydrogen peroxide.
- the acidic treatment compositions of this invention may be produced by mixing the required components in a suitable vessel to form the compositions.
- the required components of the composition are added to the vessel in a sequence of base/acid/base/acid in order to minimize any possible heat from a reaction of the components.
- the product will have to etch not only silicon oxide, but silicon and phosphorous as well.
- the BOE is combined with hydrogen peroxide as an oxidizing agent. This implies that the BOE etches away silicon oxide, whilst the oxidizing agent generates new silicon oxide on the surface, in a continued process of etch-oxidation.
- the oxidizing agent oxidizes the phosphorous present in the layer, thereby solubilizing it.
- the etched species including, but not limited to metal impurities
- a chelating agent are partly kept in solution by the addition of a chelating agent, whereas the wettability of the surface (i.e. the efficiency with which the oxidizing agent can oxidize the surface) is improved by the addition of a surfactant.
- the addition of acetic acid ensures a doubly buffered system, which aids in process stability.
- a set of 25 neighboring multi-crystalline silicon wafers of a size of about 15.6 x 15.6 cm 2 with a thickness of about 180-200 ⁇ m were processed in an industrial type in-line photovoltaic cell manufacturing sequence. After emitter deposition and phosphorous glass removal with HF, the wafers with a partial phosphosilicate glass layer on a top surface of the wafer substrates, the wafers were contacted with (1) an acidic treatment solution of this invention at 40° C, (2) the prior art PV-160 solution at the 70° C required for such solution, or (3) no treatment solution as a control.
- the acidic treatment solution of the invention comprised a BOE solution of about 3.1% tetramethylammonium hydroxide, about 1.2% acetic acid, about 2.1% HF, about 0.8 % 3,5-dimethylhex-l-yn-3-ol about 0.8% ammonium hydroxide, about 0.6% EDTA, about 91.5% water.
- This BOE solution was mixed with hydrogen peroxide oxidizer solution in a ratio of BOE/water/30% hydrogen peroxide solution of about 1/6/0.2.
- the prior art PV-160 solution was also employed mixed with hydrogen peroxide oxidizer solution in a ratio of BOE/water/30% hydrogen peroxide solution of about 1/6/0.2.
- a set of 25 neighboring multi-crystalline silicon wafers of a size of about 15.6 x 15.6 cm 2 with a thickness of about 180-200 ⁇ m were processed in an industrial type in-line photovoltaic cell manufacturing sequence. After emitter deposition and phosphorous glass removal with HF, the wafers with a partial phosphosilicate glass layer on a top surface of the wafer substrates, the wafers were contacted with (1) a n acidic treatment solution of this invention at 40° C, (2) the prior art PV- 160 solution at the 70° C required for such solution.
- the treatment solution of the invention comprised a BOE solution of about 3.1% tetramethylammonium hydroxide, about 1.2% acetic acid, about 2.1% HF, about 0.8 % 3,5-dimethylhex-l-yn-3-ol about 0.8% ammonium hydroxide, about 0.6% EDTA, about 91.5% water.
- This BOE solution was mixed with hydrogen peroxide oxidizer solution in a ratio of BOE/water/30% hydrogen peroxide of about 1/6/0.8.
- the prior art PV-160 solution was also employed mixed with hydrogen peroxide oxidizer solution in a ratio of BOE/water/30% hydrogen peroxide solution of about 1/6/0.2.
- a set of 25 neighboring multi-crystalline silicon wafers of a size of about 15.6 x 15.6 cm 2 with a thickness of about 180-200 ⁇ m were processed in an industrial type in-line photovoltaic cell manufacturing sequence. After emitter deposition and phosphorous glass removal with HF, the wafers with a partial phosphosilicate glass layer on a top surface of the wafer substrates, the wafers were contacted with (1) an acidic treatment solution of this invention at 25°C, 30°C and 40° C, (2) the prior art PV- 160 solution at the 70° C required for such solution, or (3) no solution as a control.
- the acidic treatment solution of the invention comprised a BOE solution of about 3.1% tetramethylammonium hydroxide, about 1.2% acetic acid, about 2.1% HF, about 0.8 % 3,5-dimethylhex-l-yn-3-ol about 0.8% ammonium hydroxide, about 0.6% EDTA, about 91.5% water.
- This BOE solution was mixed with hydrogen peroxide oxidizer solution in a ratio of BOE/water/30% hydrogen peroxide solution of about 1/6/1.
- the prior art PV-160 solution was also employed mixed with hydrogen peroxide oxidizer solution in a ratio of BOE/water/hydrogen peroxide solution of about 1/6/0.2.
- composition of this invention increased the sheet resistance and/or power density level of the cell significantly over the control.
- the composition of this invention showed equal or superior power density compared to the PV- 160.
- the composition of this invention was able to do so in a temperature range of 20° C to 40° C whereas the PV- 160 composition required a temperature of 70° C to do that.
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Abstract
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Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
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EP10716465A EP2387801A2 (en) | 2009-01-14 | 2010-01-11 | Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level |
SG2011050853A SG172973A1 (en) | 2009-01-14 | 2010-01-11 | Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level |
CN201080004496.XA CN102282682B (en) | 2009-01-14 | 2010-01-11 | Increase the solution of wafer sheet resistance and/or photovoltaic cell power density level |
RU2011134068/28A RU2011134068A (en) | 2009-01-14 | 2010-01-11 | METHOD FOR INCREASING SURFACE RESISTANCE OF PLATE AND / OR POWER DENSITY LEVEL OF PHOTOELECTRIC ELEMENT |
AU2010205945A AU2010205945A1 (en) | 2009-01-14 | 2010-01-11 | Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level |
CA2749836A CA2749836A1 (en) | 2009-01-14 | 2010-01-11 | Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level |
JP2011545669A JP2012515444A (en) | 2009-01-14 | 2010-01-11 | Solution for increasing the sheet resistance of a wafer and / or the output density of a photovoltaic cell |
MX2011007413A MX2011007413A (en) | 2009-01-14 | 2010-01-11 | Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level. |
BRPI1006176A BRPI1006176A2 (en) | 2009-01-14 | 2010-01-11 | solution to increase chip plate resistance and / or photovoltaic cell energy density level |
IL213936A IL213936A0 (en) | 2009-01-14 | 2011-07-05 | Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level |
ZA2011/05863A ZA201105863B (en) | 2009-01-14 | 2011-08-11 | Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level |
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US14447909P | 2009-01-14 | 2009-01-14 | |
US61/144,479 | 2009-01-14 | ||
US22568509P | 2009-07-15 | 2009-07-15 | |
US61/225,685 | 2009-07-15 |
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WO2010081661A3 WO2010081661A3 (en) | 2010-10-07 |
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EP (1) | EP2387801A2 (en) |
JP (1) | JP2012515444A (en) |
KR (1) | KR20110105396A (en) |
CN (1) | CN102282682B (en) |
AU (1) | AU2010205945A1 (en) |
BR (1) | BRPI1006176A2 (en) |
CA (1) | CA2749836A1 (en) |
IL (1) | IL213936A0 (en) |
MX (1) | MX2011007413A (en) |
RU (1) | RU2011134068A (en) |
SG (1) | SG172973A1 (en) |
TW (1) | TW201036058A (en) |
WO (1) | WO2010081661A2 (en) |
ZA (1) | ZA201105863B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012028728A2 (en) | 2010-09-03 | 2012-03-08 | Schott Solar Ag | Method for the wet-chemical etching back of a solar cell emitter |
JP2012238849A (en) * | 2011-04-21 | 2012-12-06 | Rohm & Haas Electronic Materials Llc | Improved polycrystalline texturing composition and method |
DE102011103538A1 (en) | 2011-06-07 | 2012-12-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for doping e.g. p-type semiconductor substrate while manufacturing crystalline silicon solar cell, involves utilizing doped silicon as sources, where doped silicon is provided with part of silicon-, hydrogen-atoms of specified range |
CN113980580A (en) * | 2021-12-24 | 2022-01-28 | 绍兴拓邦电子科技有限公司 | Alkali etching polishing method for monocrystalline silicon wafer |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2372904A1 (en) * | 1976-11-19 | 1978-06-30 | Ibm | STRIPPING COMPOSITION OF POLYCRYSTALLINE SILICON CONTAINING TETRAMETHYLAMMONIUM HYDROXIDE AND APPLICATION METHOD |
TW263531B (en) * | 1992-03-11 | 1995-11-21 | Mitsubishi Gas Chemical Co | |
KR20010066769A (en) * | 1999-04-20 | 2001-07-11 | 가네꼬 히사시 | Cleaning liquid |
JP2003152176A (en) * | 2001-11-14 | 2003-05-23 | Matsushita Electric Ind Co Ltd | Method of cleaning semiconductor device and its manufacturing method |
CA2488737A1 (en) * | 2002-06-07 | 2003-12-18 | Mallinckrodt Baker, Inc. | Microelectronic cleaning and arc remover compositions |
JP4319006B2 (en) * | 2003-10-23 | 2009-08-26 | シャープ株式会社 | Method for manufacturing solar battery cell |
JP4553597B2 (en) * | 2004-01-30 | 2010-09-29 | シャープ株式会社 | Method for manufacturing silicon substrate and method for manufacturing solar cell |
US20070099806A1 (en) * | 2005-10-28 | 2007-05-03 | Stewart Michael P | Composition and method for selectively removing native oxide from silicon-containing surfaces |
TW200918664A (en) * | 2007-06-13 | 2009-05-01 | Advanced Tech Materials | Wafer reclamation compositions and methods |
-
2010
- 2010-01-11 JP JP2011545669A patent/JP2012515444A/en not_active Withdrawn
- 2010-01-11 KR KR1020117018830A patent/KR20110105396A/en not_active Application Discontinuation
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- 2010-01-11 WO PCT/EP2010/000076 patent/WO2010081661A2/en active Application Filing
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-
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Non-Patent Citations (1)
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---|
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012028728A2 (en) | 2010-09-03 | 2012-03-08 | Schott Solar Ag | Method for the wet-chemical etching back of a solar cell emitter |
DE102011050903A1 (en) | 2010-09-03 | 2012-03-08 | Schott Solar Ag | Process for the wet-chemical etching of a highly doped semiconductor layer |
WO2012028723A3 (en) * | 2010-09-03 | 2012-10-18 | Schott Solar Ag | Method for the wet-chemical etching of a highly doped semiconductor layer |
US9583652B2 (en) | 2010-09-03 | 2017-02-28 | Csem Centre Suisse D'electronique Et De Microtechnique Sa—Recherche Et Devéloppement | Method for the wet-chemical etching back of a solar cell emitter |
JP2012238849A (en) * | 2011-04-21 | 2012-12-06 | Rohm & Haas Electronic Materials Llc | Improved polycrystalline texturing composition and method |
US9663715B2 (en) | 2011-04-21 | 2017-05-30 | Sun Chemical Corporation | Polycrystalline texturing composition and method |
DE102011103538A1 (en) | 2011-06-07 | 2012-12-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for doping e.g. p-type semiconductor substrate while manufacturing crystalline silicon solar cell, involves utilizing doped silicon as sources, where doped silicon is provided with part of silicon-, hydrogen-atoms of specified range |
CN113980580A (en) * | 2021-12-24 | 2022-01-28 | 绍兴拓邦电子科技有限公司 | Alkali etching polishing method for monocrystalline silicon wafer |
CN113980580B (en) * | 2021-12-24 | 2022-04-08 | 绍兴拓邦新能源股份有限公司 | Alkali etching polishing method for monocrystalline silicon wafer |
Also Published As
Publication number | Publication date |
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SG172973A1 (en) | 2011-08-29 |
IL213936A0 (en) | 2011-07-31 |
KR20110105396A (en) | 2011-09-26 |
AU2010205945A1 (en) | 2011-09-01 |
RU2011134068A (en) | 2013-02-20 |
CN102282682A (en) | 2011-12-14 |
BRPI1006176A2 (en) | 2019-09-24 |
EP2387801A2 (en) | 2011-11-23 |
CN102282682B (en) | 2016-07-06 |
ZA201105863B (en) | 2012-04-25 |
MX2011007413A (en) | 2011-07-21 |
CA2749836A1 (en) | 2010-07-22 |
JP2012515444A (en) | 2012-07-05 |
TW201036058A (en) | 2010-10-01 |
WO2010081661A3 (en) | 2010-10-07 |
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