ZA201105863B - Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level - Google Patents

Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level

Info

Publication number
ZA201105863B
ZA201105863B ZA2011/05863A ZA201105863A ZA201105863B ZA 201105863 B ZA201105863 B ZA 201105863B ZA 2011/05863 A ZA2011/05863 A ZA 2011/05863A ZA 201105863 A ZA201105863 A ZA 201105863A ZA 201105863 B ZA201105863 B ZA 201105863B
Authority
ZA
South Africa
Prior art keywords
solution
power density
photovoltaic cell
sheet resistance
cell power
Prior art date
Application number
ZA2011/05863A
Inventor
Joannes T V Hoogboom
Johannes A E Oosterholt
Sabrina Ritmeijer
Original Assignee
Avantor Performance Mat Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avantor Performance Mat Bv filed Critical Avantor Performance Mat Bv
Publication of ZA201105863B publication Critical patent/ZA201105863B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • C11D2111/22—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
ZA2011/05863A 2009-01-14 2011-08-11 Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level ZA201105863B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14447909P 2009-01-14 2009-01-14
US22568509P 2009-07-15 2009-07-15
PCT/EP2010/000076 WO2010081661A2 (en) 2009-01-14 2010-01-11 Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level

Publications (1)

Publication Number Publication Date
ZA201105863B true ZA201105863B (en) 2012-04-25

Family

ID=42272664

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA2011/05863A ZA201105863B (en) 2009-01-14 2011-08-11 Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level

Country Status (14)

Country Link
EP (1) EP2387801A2 (en)
JP (1) JP2012515444A (en)
KR (1) KR20110105396A (en)
CN (1) CN102282682B (en)
AU (1) AU2010205945A1 (en)
BR (1) BRPI1006176A2 (en)
CA (1) CA2749836A1 (en)
IL (1) IL213936A0 (en)
MX (1) MX2011007413A (en)
RU (1) RU2011134068A (en)
SG (1) SG172973A1 (en)
TW (1) TW201036058A (en)
WO (1) WO2010081661A2 (en)
ZA (1) ZA201105863B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011050136A1 (en) 2010-09-03 2012-03-08 Schott Solar Ag Process for the wet-chemical etching of a silicon layer
JP2012238849A (en) * 2011-04-21 2012-12-06 Rohm & Haas Electronic Materials Llc Improved polycrystalline texturing composition and method
DE102011103538A1 (en) 2011-06-07 2012-12-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for doping e.g. p-type semiconductor substrate while manufacturing crystalline silicon solar cell, involves utilizing doped silicon as sources, where doped silicon is provided with part of silicon-, hydrogen-atoms of specified range
CN113980580B (en) * 2021-12-24 2022-04-08 绍兴拓邦新能源股份有限公司 Alkali etching polishing method for monocrystalline silicon wafer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2372904A1 (en) * 1976-11-19 1978-06-30 Ibm STRIPPING COMPOSITION OF POLYCRYSTALLINE SILICON CONTAINING TETRAMETHYLAMMONIUM HYDROXIDE AND APPLICATION METHOD
TW263531B (en) * 1992-03-11 1995-11-21 Mitsubishi Gas Chemical Co
KR20010066769A (en) * 1999-04-20 2001-07-11 가네꼬 히사시 Cleaning liquid
JP2003152176A (en) * 2001-11-14 2003-05-23 Matsushita Electric Ind Co Ltd Method of cleaning semiconductor device and its manufacturing method
PL207297B1 (en) * 2002-06-07 2010-11-30 Mallinckrodt Baker Inc Microelectronic cleaning and arc remover compositions
JP4319006B2 (en) * 2003-10-23 2009-08-26 シャープ株式会社 Method for manufacturing solar battery cell
JP4553597B2 (en) * 2004-01-30 2010-09-29 シャープ株式会社 Method for manufacturing silicon substrate and method for manufacturing solar cell
US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
TW200918664A (en) * 2007-06-13 2009-05-01 Advanced Tech Materials Wafer reclamation compositions and methods

Also Published As

Publication number Publication date
MX2011007413A (en) 2011-07-21
CN102282682A (en) 2011-12-14
JP2012515444A (en) 2012-07-05
TW201036058A (en) 2010-10-01
BRPI1006176A2 (en) 2019-09-24
WO2010081661A3 (en) 2010-10-07
WO2010081661A2 (en) 2010-07-22
RU2011134068A (en) 2013-02-20
SG172973A1 (en) 2011-08-29
EP2387801A2 (en) 2011-11-23
CA2749836A1 (en) 2010-07-22
AU2010205945A1 (en) 2011-09-01
CN102282682B (en) 2016-07-06
IL213936A0 (en) 2011-07-31
KR20110105396A (en) 2011-09-26

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ZA201105863B (en) Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level