JP2009513026A5 - - Google Patents
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- Publication number
- JP2009513026A5 JP2009513026A5 JP2008537739A JP2008537739A JP2009513026A5 JP 2009513026 A5 JP2009513026 A5 JP 2009513026A5 JP 2008537739 A JP2008537739 A JP 2008537739A JP 2008537739 A JP2008537739 A JP 2008537739A JP 2009513026 A5 JP2009513026 A5 JP 2009513026A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrically insulating
- insulating structure
- disposed
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 17
- 239000004065 semiconductor Substances 0.000 claims 13
- 238000002844 melting Methods 0.000 claims 6
- 229910000679 solder Inorganic materials 0.000 claims 5
- 239000000853 adhesive Substances 0.000 claims 4
- 230000001070 adhesive Effects 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 239000004020 conductor Substances 0.000 claims 1
Claims (5)
- 第１表面を有する基板と、
基板の第１表面の上に配置される半導体チップと、
基板の第１表面の上に配置される電気絶縁構造と、前記電気絶縁構造は電気リード、及び電気リードと一体成形される有機系要素を有することと、
電気絶縁構造及び基板の第１表面を一体的に接続する半田要素とを備え、
前記電気絶縁構造は金属要素をさらに備え、
前記有機系要素は前記金属要素と一体成形され、
前記有機系要素は前記金属要素と電気リードの間に配置される、半導体構造。 - 半導体チップと基板の第１表面との間に配置され、かつ半導体チップ及び基板の第１表面を一体的に接続する接着剤をさらに備え、
半田要素は第１溶融温度を有し、
接着剤は第１溶融温度よりも高い第２溶融温度を有する、請求項１記載の半導体構造。 - 前記基板は導電材料からなり、前記半導体チップに電気的に接続される、請求項１記載の半導体構造。
- 第１表面を有する基板と、
基板の第１表面の上に配置される半導体チップと、
基板の第１表面の上に配置される電気絶縁構造と、前記電気絶縁構造は電気リード、及び電気リードと一体成形される有機系要素を有することと、
電気絶縁構造及び基板の第１表面を一体的に接続する半田要素とを備え、
前記有機系要素はプラスチックからなり、
前記電気絶縁構造は金属要素をさらに備えている、半導体構造。 - 第１表面を有する基板と、
基板の第１表面の上に配置される半導体チップと、
基板の第１表面の上に配置される電気絶縁構造と、前記電気絶縁構造は電気リード、及び電気リードと一体成形される有機系要素を有することと、
電気絶縁構造及び基板の第１表面を一体的に接続する半田要素と、
半導体チップと基板の第１表面との間に配置され、かつ半導体チップ及び基板の第１表面を一体的に接続する接着剤とを備え、
前記半田要素は第１溶融温度を有し、
前記接着剤は第１溶融温度よりも高い第２溶融温度を有し、
前記有機系要素はプラスチックからなる、半導体構造。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/257,784 US7446411B2 (en) | 2005-10-24 | 2005-10-24 | Semiconductor structure and method of assembly |
| PCT/US2006/039649 WO2007050287A2 (en) | 2005-10-24 | 2006-10-10 | Semiconductor structure and method of assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009513026A JP2009513026A (ja) | 2009-03-26 |
| JP2009513026A5 true JP2009513026A5 (ja) | 2009-11-26 |
Family
ID=37968334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008537739A Pending JP2009513026A (ja) | 2005-10-24 | 2006-10-10 | 半導体構造及び組み立て方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7446411B2 (ja) |
| JP (1) | JP2009513026A (ja) |
| CN (1) | CN101553918B (ja) |
| TW (1) | TWI489602B (ja) |
| WO (1) | WO2007050287A2 (ja) |
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| CN102623416B (zh) * | 2012-04-24 | 2015-09-02 | 苏州远创达科技有限公司 | 一种射频功放模块的功率器件无封装结构及其组装方法 |
| US9312817B2 (en) | 2012-07-20 | 2016-04-12 | Freescale Semiconductor, Inc. | Semiconductor package design providing reduced electromagnetic coupling between circuit components |
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| US10199313B2 (en) | 2014-06-02 | 2019-02-05 | Qorvo Us, Inc. | Ring-frame power package |
| US9666498B2 (en) | 2014-06-02 | 2017-05-30 | Qorvo Us, Inc. | Ring-frame power package |
| US9438184B2 (en) | 2014-06-27 | 2016-09-06 | Freescale Semiconductor, Inc. | Integrated passive device assemblies for RF amplifiers, and methods of manufacture thereof |
| US9721902B2 (en) | 2014-08-26 | 2017-08-01 | Samsung Electronics Co., Ltd. | Method of manufacturing RF power amplifier module, RF power amplifier module, RF module, and base station |
| CN104218018B (zh) * | 2014-08-26 | 2017-08-29 | 深圳三星通信技术研究有限公司 | 一种射频功放模块及其组装方法、射频模块、基站 |
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| CN107771416B (zh) * | 2015-06-22 | 2021-05-28 | 瑞典爱立信有限公司 | 用于无埋块的rf功率放大器的滑动和安装制造 |
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-
2005
- 2005-10-24 US US11/257,784 patent/US7446411B2/en active Active
-
2006
- 2006-10-10 WO PCT/US2006/039649 patent/WO2007050287A2/en active Application Filing
- 2006-10-10 CN CN2006800397429A patent/CN101553918B/zh active Active
- 2006-10-10 JP JP2008537739A patent/JP2009513026A/ja active Pending
- 2006-10-20 TW TW095138667A patent/TWI489602B/zh active
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