TWI489602B - 半導體結構及半導體封裝系統 - Google Patents

半導體結構及半導體封裝系統 Download PDF

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TWI489602B
TWI489602B TW095138667A TW95138667A TWI489602B TW I489602 B TWI489602 B TW I489602B TW 095138667 A TW095138667 A TW 095138667A TW 95138667 A TW95138667 A TW 95138667A TW I489602 B TWI489602 B TW I489602B
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component
semiconductor
electrical
substrate
organic
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TW095138667A
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TW200721421A (en
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Brian W Condie
Lakshminarayan Viswanathan
Richard W Wetz
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Freescale Semiconductor Inc
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Description

半導體結構及半導體封裝系統
本發明一般係關於半導體裝置，更明確地說，係關於半導體裝置封裝。
半導體晶粒或晶片會被囊封在一半導體裝置封裝中，以防止外部應力與環境破壞該等晶片，並且提供一系統以攜載電氣信號至該等晶片且從該等晶片處攜載信號。目前有眾多不同類型的半導體封裝存在，其包含：雙直列封裝、接針格柵陣列(PGA)封裝、捲帶式自動焊接(TAB)封裝、多晶片模組(MCM)、以及功率封裝。其中一種功率封裝類型係射頻(RF)功率封裝，當該半導體晶片中的一半導體裝置消耗大於約十瓦之功率且大於約一百個百萬赫茲(MHz)之頻率運作時通常便會用到。RF功率封裝通常包含一內部空氣間隙，其用於較低功率損失與較佳RF效能。
目前的高功率RF半導體封裝係使用陶瓷絕緣體，由於形狀的關係，它們通常被稱為「窗形框架」或「框架」，且它們會被焊接至一金屬源極基板。不過，該等陶瓷絕緣體非常昂貴且具有不佳的機械耐受性。
Bregante等人於2003年1月28日獲頒的美國專利案第6,511,866號中則說明另一種高功率RF半導體封裝，且其使用一以聚合物絕緣體或聚合物為主之框架。不過，由於該框架與該金屬源極基板的鎳及/或金質表面之間本質脆弱的聚合物/金屬介接效果的關係，此封裝具有潛在的可靠度問題。不良密裝則係因為不容易創造機械耐用性且該框架與該金屬源極基板之間很難有一致的環氧樹脂接合作用所導致。此外，就新型的無引線封裝以及業界強制套用的其它有害物質禁限用指令(RoHS)規定來說，此封裝在此聚合物/金屬介面處發生機械故障的可能性很高。再者，此封裝在最終安裝條件下還可能會有不良的機械完整性。
Zimmerman於2005年3月15日獲頒的美國專利案第6,867,367號中則說明又一種高功率RF半導體封裝。不過，此封裝使用一獨賣的高溫聚合物材料來製作該框架，在將半導體晶片附著至該金屬源極基板前，會先將該框架鑄造於該基板中。由於將半導體晶片附著或安裝於該金屬源極基板上需要極高的溫度，所以，在進行晶片附著步驟之前先完成封裝會在該框架與該金屬源極基板之間產生機械可靠度問題。在進行晶片附著步驟之前先完成封裝還可能會限制晶片附著的選用。舉例來說，倘若該聚合物會在攝氏四百度熔化或變質的話，那麼便無法使用在攝氏四百度以上進行的金矽晶片附著製程。
據此，本領域存在一種新穎的高功率RF半導體封裝之需求，其成本低於以陶瓷為主之封裝且具有優於目前以聚合物為主之封裝、空腔封裝的改良可靠度。
本發明的各項具體實施例包含一用於一射頻組件的半導體結構或半導體封裝系統，其中會將一金屬元件或金屬層鑄造或崁入一塑膠之中，以形成一電隔絕體結構的基底，幫助將該電隔絕體結構焊接附著至一基板或凸緣。輸入/輸出引線也會被鑄造或崁入該電隔絕體結構之中，其能夠降低單一零件成本，並且改良尺寸公差，以及促成多引線結構。於部份具體實施例中，該等引線及/或金屬元件具有鎖模特徵，以增強塑膠與金屬的黏著效果。因為可使用焊劑來形成該電隔絕體結構與該基板之間的接點，而非使用環氧樹脂，所以，該金屬元件會提供一更耐用的機械結構。該金屬元件還允許使用成本較低的塑膠材料作為該電隔絕體結構的塑膠部份。
本發明的其它具體實施例可能包含金屬元件，其具有一表面區面向該基板之表面，且可能還包含該電隔絕體結構的塑膠材料部份，其同樣具有一表面區面向該基板之表面。於該些具體實施例中，該金屬元件的表面積小於該塑膠材料部份的表面積。如下文解釋，此表面積差異能夠降低焊劑流出或焊劑流入等問題，因為焊劑將會黏著在該金屬元件上，而不會黏著在該電隔絕體結構的曝露塑膠材料部份上。本發明的部份具體實施例包含前述特點之組合，或是一或多項前述特點結合本文所述之其它特點。
此外，本發明的部份具體實施例可能包含一用於該半導體結構或半導體封裝系統的組裝過程，其中：(1)一半導體晶片會被附著或耦合至該基板；(2)具有該金屬元件或該等引線的電隔絕體結構會被焊接附著至該基板；(3)該半導體晶片會被線接合至該等引線；以及(4)一蓋部會被黏接至該電隔絕體結構的塑膠材料部份，以便創造一密裝殼體或至少一粗漏殼體。此組裝過程允許在該電隔絕體結構中沒有溫度敏感塑膠材料時於高溫處將該半導體晶片附著至該基板，從而可使用眾多不同的低成本塑膠材料並且還可改良可靠度。
現在參考各圖式，圖1說明一半導體封裝系統或半導體結構100的俯視圖；而圖2說明半導體結構100的斷面圖，其係沿著圖1中的斷面線2－2看去所得者。半導體結構100包含一基板110，其具有一表面111以及一位於表面111對面的表面112。於部份具體實施例，基板110亦稱為凸緣。於相同或不同的具體實施例中，基板110係充當一吸熱片或散熱片。於每一個該些具體實施例中，基板110可能包括一導熱及/或導電材料，舉例來說，銅(Cu)、以銅為主之複合物、以銅為主之層合物、碳矽化鋁(AlSiC)、銅質石墨、鑽石、及/或類似的材料。銅型複合物的範例包含鎢化銅(CuW)與鉬化銅(CuMo)；而銅型層合物的其中一範例則為銅鉬銅(CuMoCu)層合物。
基板110的表面111可包含一層113，其係疊置在基板110的導電材料上。層113可為一金屬層或一可焊金屬層。當層113係一可焊金屬層時，層113便為基板110提供一可焊表面。作為一範例，層113可能係一由鎳與金所組成的可焊表面。於此特殊具體實施例中，層113可包括一金層以及介於該金層與基板110之導電材料之間的一鎳層。於另一具體實施例中，層113可包括鈷化鎳(NiCo)與金(Au)。作為一範例，層113可被電鍍於基板110之上，且還可位在基板110的其它表面上，其包含表面112在內。
基板110還可包含可選的安裝孔或凹洞114。圖1中描述兩個凹洞，不過確實的凹洞數量則可改變。凹洞114可位在基板110的兩端115與116處。如稍後解釋，凹洞114可用來將半導體結構100固定置另一基板110，如電路板。
半導體結構100還包含至少一半導體晶片120。圖1中描述四個半導體晶片，不過確實的半導體晶片數量則可改變。半導體晶片120係位在基板110的表面111之上。於一具體實施例中，半導體晶片120係由適用於射頻或其它高頻裝置的一或多種材料所組成。於一不同或相同的具體實施例中，半導體晶片120係由適用於高功率裝置的一或多種材料所組成。作為一範例，半導體晶片120可能包括砷化鎵(GaAs)、矽(Si)、氮化鎵(GaN)、或類似的材料。於大部份的具體實施例中，半導體晶片120還可被稱為半導體晶粒。
每一個半導體晶片120均包含至少一半導體裝置121。據此，半導體裝置121便同樣係位在基板110的表面111之上。於半導體晶片120係由矽所組成的具體實施例中，半導體裝置121可能係橫向擴散金氧半導體(LDMOS)裝置。至少一半導體裝置121係主動裝置(也就是，電晶體)，且不僅一或多個被動裝置(如，電阻器、電容器、電感器、…等)，還有其它的半導體裝置121均可為匹配裝置，如整合被動裝置(IPD)與金氧半導體電容器(MOSCAP)。於一不同具體實施例中，可利用作為匹配裝置的一或多個非半導體組件來置換一或多個半導體晶片120。該些非半導體組件的範例包含IPD以及低溫共燒陶瓷(LTCC)匹配磚。
每一個半導體晶片120均可具有可焊表面122與223，其係由金(Au)、銀(Ag)、金鈷鎳(NiCoAu)、金鎳(NiAu)、或是類似材料所組成。表面122與223可能全部係可焊表面，或是表面122與223僅有一部份係可焊表面。於未針對半導體結構100使用焊接互連線的另一具體實施例中，表面122則係皆不可焊。
半導體結構100還包含一黏著劑230，其係位在半導體晶片120與基板110的表面111之間，並且用以將它們耦合在一起。於部份具體實施例中，黏著劑230可能具導電性。於該些具體實施例中，黏著劑230可將半導體晶片120電耦合至基板110，其可充當半導體晶片120中之半導體裝置121的電引線。據此，於該些具體實施例中，當基板110係半導體裝置121之源極電極的電引線時，基板110便可稱為一源極基板或源極凸緣。另外，於該些具體實施例中，黏著劑230包含數個離散或個別部份。
於一具體實施例中，黏著劑230可為任何合宜的晶片或晶粒附著材料，如以鉛為主或以無鉛為主之焊劑。於此具體實施例中，黏著劑230可稱為黏著元件。作為一範例，合宜的以無鉛為主之焊劑包含金錫(AuSn)、金矽(AuSi)、或是類似材料。於此具體實施例中，黏著劑230會將表面111與表面223處的層113之一部分焊接在一起。當半導體晶片120係由矽所組成時，黏著劑230可能係由具有低熱膨脹係數(CTE)的材料所組成，如金矽，以便更匹配半導體晶片120的CTE。於其它具體實施例中，黏著劑230可能係導電或不導電的環氧樹脂，或是熱固性或熱塑性聚合物。
黏著劑230可利用包覆技術、電鍍技術、網版印刷技術、或是焊球技術形成於半導體晶片120的可焊表面223上或基板110表面111的層113上。黏著劑230亦可能係一預成型體。如下文解釋，黏著劑230的熔化溫度與回焊溫度可能高於於半導體結構100之製造或組裝過程的後期階段期間所用的其它黏著劑或焊劑的熔化溫度與回焊溫度。
圖3說明在組裝過程的一後期步驟期間半導體結構100的立體俯視圖；而圖4則說明半導體結構100的斷面圖，其係沿著圖3中的斷面線4－4看去所得者。此外，半導體結構100還包含一位在基板110的表面111上之電隔絕體結構340。如圖3與4中所示，電隔絕體結構340包含兩條電引線341與342。不過，一般來說，電隔絕體結構340可能包含多於或少於兩條的電引線。電引線341與342係用來傳導電信號給半導體晶片120中的半導體裝置121或是用以從半導體晶片120中的半導體裝置121處來傳導電氣信號，並且用以將電氣信號傳入或傳出半導體結構100。於一具體實施例中，電引線341與342可分別係半導體裝置121之閘極電極與汲極電極的閘極引線與汲極引線。於此具體實施例中，基板110可充當半導體裝置121之源極電極的源極引線。
作為一範例，電引線341與342可能包括導電材料，舉例來說，其包含銅、銅合金、以及前面所述用於基板110的其它導電材料。此外，電引線341與342還可包括具有鎳以鐵為主之合金，如合金42，其成份包括百分之四十二的鎳。電引線341與342還可包括具有鎳與鈷以鐵為主之合金，如位於美國達拉威的CRS Holdings,Inc.所售者，其品牌名稱為Kovar。
電引線341與342還可能包含可焊表面，以便讓電引線341與342適合於半導體結構100內部進行以線接合或其它互連方案，並且讓電引線341與342適合於半導體結構100外部進行線接合或焊接。作為一範例，電引線341與342的可焊表面可能包括和基板110的層113(圖1與2)以及半導體晶片120的可焊表面122與223相同的可焊材料。
電隔絕體結構340還包含一被鑄造在電引線341與342中的以有機為主之元件343。於部份具體實施例中，以有機為主之元件343可能具有一窗形框架的形狀，如圖3中所示。於該些具體實施例中，以有機為主之元件343可稱為一框架，而電隔絕體結構340則可稱為一框架結構。以有機為主之元件係由一電絕緣材料所組成，舉例來說，聚合物、熱塑性材料、及/或熱固性材料。據此，於部份具體實施例中，以有機為主之元件343亦可稱為一塑膠絕緣體框架。
電隔絕體結構340進一步包含一金屬元件444，其中，以有機為主之元件343係位在金屬元件444以及電引線341與342之間。金屬元件444可位在電隔絕體結構340的底部或基底處。於此具體實施例中，金屬元件444亦可稱為一基底金屬元件。以有機為主之元件343會讓金屬元件444以及電引線341與342彼此電隔絕或絕緣。金屬元件444可和以有機為主之元件343具有相同的窗形框架形狀以及相同的覆蓋區。金屬元件444會為電隔絕體結構340提供一可焊表面，俾使電隔絕體結構340可被焊接附著至基板110，下文將作解釋。
金屬元件444可包括和電引線341與342相同的材料，且如同電引線341與342，其亦可能具有一可焊表面。倘若金屬元件444具有單一可焊表面的話，該可焊表面便會面向基板110的表面111。於一具體實施例中，金屬元件444和電引線341與342包括相同或實質雷同的材料，且係由相同的引線框架或兩個分離的引線框架所製成。金屬元件444亦可能係在進行以有機為主之元件343的鑄造製程之前被放置在鑄模板之間的一個別組件。
以有機為主之元件343會被鑄造至金屬元件444中，其可包含複數個鎖模445，用以改良以有機為主之元件343與金屬元件444的黏著效果。鎖模445可能具有不同的形狀、大小、以及技術。舉例來說，除了圖4中所示的鎖模以外，鎖模445可於金屬元件444中包含一或多個穿透孔，取代(或除了)圖4中所示的鎖模。鎖模445亦可包含纏繞技術。雖然圖4中沒有顯示，不過，電引線341與342亦可能包含相同或不同的鎖模技術，以改良以有機為主之元件343和電引線341與342的黏著效果。
以有機為主之元件343可利用射出製程、轉印製程、或是其它鑄造製程來形成，以便將以有機為主之元件343同時鑄造在金屬元件444以及電引線341與342之中。在半導體結構100的部份具體實施例中，以有機為主之元件343中位於電引線341與342之上的部份係可選且可排除。
半導體結構100進一步包含一位在基板110的表面111上之焊接元件350。焊接元件350會將電隔絕體結構340與基板110耦合在一起。更明確地說，焊接元件350會將金屬元件444的可焊表面與基板110之表面111的層113的一部份耦合在一起。據此，焊接元件350會位在金屬元件444與基板110之間。作為一範例，焊接元件350可包括和黏著劑230(圖2)相同的焊接材料，以及本技術中已知的其它焊接材料，且可以雷同的方式來形成。焊接元件350的熔化溫度與回焊溫度可能低於黏著劑230的熔化溫度與回焊溫度。
如圖3與4中所示，焊接元件350的形狀可能與以有機為主之元件343的窗形框架形狀雷同。再進行回焊之前，焊接元件350可能係由單器件所組成，或者其可能係源自二或更多離散器件。倘若焊接元件350係由二或更多離散器件所組成的話，那麼該回焊步驟較佳的係會組合該等器件，俾使該焊接元件350成為單一的一元元件。焊接元件350可能係一預成型體，或者於一不同的具體實施例中，可在將電隔絕體結構340鑄造或附著至基板110上以前先將焊接元件350沉積在金屬元件444上。於此不同的具體實施例中，半導體結構100並不具有可提高半導體結構100之製造能力的預成型體。
於一圖中未顯示的具體實施例中，可在將電隔絕體結構340附著至基板110以前先將焊接元件350沉積在金屬元件444上。於此具體實施例中，作為一範例，可於其上形成一和層113雷同的層，或是可利用一和層113雷同的層來置換金屬元件444且可包括金(Au)層與錫(Sn)層。
圖5說明在組裝過程的一更後期步驟期間半導體結構100的俯視圖；而圖6則說明半導體結構100的斷面圖，其係沿著圖5中的斷面線6－6看去所得者。如圖5與6中所示，電隔絕體結構340係被焊接至基板110。此外，半導體結構100還包含複數條焊線560，用以將半導體晶片120中的半導體裝置121和電引線341與342耦合在一起。舉例來說，如本技術中所知者，焊線560包括導電材料，舉例來說，如金、矽鋁、錳鋁、銅、或是類似的材料。於其它具體實施例中，可以其它電互連結構來置換焊線560，舉例來說，如焊球、覆晶互連線、捲帶式自動焊接(TAB)、或是類似的結構。
圖7說明在組裝過程的一後續步驟期間半導體結構100的俯視圖；而圖8則說明半導體結構100的斷面圖，其係沿著圖7中的斷面線8－8看去所得者。半導體結構100包含一位於基板110上的蓋部770、複數個半導體晶片120、以及電隔絕體結構340。蓋部770會保護半導體晶片120與焊線560，避免受到實體與環境破壞。蓋部770可被耦合至以有機為主之元件343及/或電引線341與342。作為一範例，蓋部770可能係由液晶聚合物(LCP)、陶瓷材料、或是其它不導電的材料所組成。蓋部770可能具有眾多不同的組態，其包含一用以容納更多焊線的凹洞。
基板110、電隔絕體結構340的以有機為主之元件343、電隔絕體結構340的電引線341與342、電隔絕體結構340的金屬元件444、焊接元件350、以及蓋部770會構成至少一粗漏密封封裝，其具有複數個半導體晶片120與複數條焊線560位於其中之一空氣間隙880。於一不同的具體實施例中，半導體結構100係一密封的密封封裝。
於一具體實施例中，半導體晶片120中的半導體裝置121均為高功率、射頻裝置，所以，該封裝也是高功率、射頻封裝。於相同或不同的具體實施例中，空氣間隙880可能係由其它材料所組成，如氮氣或其它的惰性氣體。
圖9說明一半導體結構或半導體封裝系統900之一部份的的側視圖。半導體封裝系統900包含一封裝910，其可能和如圖1至8中所示之高功率、射頻封裝雷同。半導體封裝系統900還包含一電路板920。作為一範例，電路板920可能係一底板、一散熱片、或是一印刷電路板(PC板)。半導體封裝系統900進一步包含一或多個扣件930，其可用以將封裝910耦合至電路板920。舉例來說，扣件930可能係旋緊在基板110之凹洞114內(圖1)。
半導體封裝系統900還包含黏著劑940。於一具體實施例中，黏著劑940可能係焊劑，用以將電引線341與342(圖3與4)電耦合至電路板920。作為一範例，黏著劑940可能係一無鉛焊劑，其包括錫銀銅、錫銀、錫銻、錫鉍、錫銅、金錫、金鍺、或是類似材料。作為另一範例，黏著劑940還可能係鉛型焊劑，如鉛錫銀。於該些具體實施例中，黏著劑940的熔化溫度與回焊溫度低於焊接元件350(圖6)與黏著劑230(圖2)的熔化溫度與回焊溫度。雖然圖9中未顯示，不過，亦可位於電路板920與封裝910的基板110(圖1)之間位黏著劑940或另一導電黏著劑，以便將基板110電耦合至電路板920。於此具體實施例中，較佳的係，此黏著劑的熔化溫度與回焊溫度同樣低於焊接元件350(圖6)的熔化溫度與回焊溫度。
圖10說明一電隔絕體結構1040之一部份的斷面圖，其係電隔絕體結構340(圖3與4)的一不同具體實施例。電隔絕體結構1040包含一金屬元件1044，取代電隔絕體結構340中的金屬元件444(圖4)。除金屬元件1044的覆蓋區小於金屬元件444外，金屬元件1044和金屬元件444雷同。據此，金屬元件1044中面向基板110(圖4)的表面的表面積係小於以有機為主之元件343中同樣面向基板110的表面的表面積。(圖4中，金屬元件444實質上和以有機為主之元件343具有相同的內周圍與外周圍，使得金屬元件444中面向基板110的表面的表面積實質上和以有機為主之元件343中同樣面向基板110的表面的表面積相同。)於此具體實施例中，以有機為主之元件343的一部份1041並未被金屬元件1044覆蓋，且充當一焊劑屏障，以阻止焊接元件350(3與4)的焊劑朝向半導體晶片120(圖4)流出或流入。
圖10中金屬元件1044與圖4中金屬元件444之間的另一差別在於金屬元件1044在金屬元件1044之兩個不同表面上具有鎖模1045。明確地說，如圖10中所示，金屬元件1044在金屬元件1044之兩個相鄰表面上具有鎖模1045。金屬元件1044之側表面上的額外鎖模能夠改良以有機為主之元件343與金屬元件1044的黏著效果。
圖11說明一電隔絕體結構1140之一部份的斷面圖，其係電隔絕體結構340(圖3與4)的另一具體實施例。電隔絕體結構1140包含一金屬元件1144，取代電隔絕體結構340中的金屬元件444(圖4)。除金屬元件1044的覆蓋區小於金屬元件444外，金屬元件1144和金屬元件444雷同。(金屬元件1144的覆蓋區亦小於圖10中的金屬元件1044。)於此具體實施例中，以有機為主之元件343的一部份1141並未被金屬元件1144覆蓋，且充當一焊劑屏障，以阻止焊接元件350(圖3與4)的焊劑朝向半導體晶片120(圖4)流出或流入。再者，以有機為主之元件343的一部份1142同樣並未被金屬元件1144覆蓋，且充當另一焊劑屏障，以阻止焊接元件350(圖3與4)的焊劑流出或「外流」至該封裝的外部。另於此具體實施例中，除了在引線框架修整位置處之外，金屬元件1144並不會於該封裝的外表面處曝露。
圖11中金屬元件1144與圖4中金屬元件444之間的另一差別在於金屬元件1144在金屬元件1144之三個不同表面上具有鎖模1145。明確地說，如圖11中所示，金屬元件1144在金屬元件1144之三個相鄰表面上具有鎖模1145。金屬元件1144之側表面上的額外鎖模能夠改良以有機為主之元件343與金屬元件1144的黏著效果。
圖12說明用於組裝一半導體結構的方法的流程圖1200。作為一範例，流程圖1200的半導體結構可能和圖1至8的半導體結構100、圖9的半導體封裝系統900、以及所有它們的各種具體實施例雷同。
流程圖1200包含一步驟1201，其用以提供一具有一表面的基板。作為一範例，步驟1201的基板可能和圖1與2的基板110雷同，且步驟1201的基板的表面可能和圖1與2的基板110的表面111雷同。
流程圖1200還包含一步驟1202，其用以將一半導體晶片安裝至該基板的表面或安裝於該基板的表面上。作為一範例，步驟1202的半導體晶片可能和圖1與2的半導體晶片120雷同且可包含一或多個半導體裝置。和用於將半導體晶片120安裝於基板110上的黏著劑雷同，該安裝步驟會用到一焊接元件或其它黏著劑。步驟1202亦可稱為晶粒附著步驟。於一具體實施例中，步驟1202係在約攝氏三百七十度的焊劑或環氧樹脂熔化溫度以上來進行。於相同或不同的具體實施例中，步驟1202係在約攝氏四百一十度的焊劑或環氧樹脂回焊溫度處來進行。
於該半導體結構中用到一或多個匹配元件的一具體實施例中，步驟1202可包含將該(等)匹配元件安裝至該基板的表面或安裝在該基板的表面上。於此具體實施例中，該(等)匹配元件可在該(等)半導體晶片之前、同時、或是之後來安裝。
流程圖1200會繼續進行焊接步驟1203，用以於該基板之表面上焊接一電隔絕體結構。舉例來說，步驟1203的電隔絕體結構可能和圖3與4的電隔絕體結構340及/或其各種具體實施例雷同，並且會利用一焊接元件將該電隔絕體結構安裝於該基板的表面。於一具體實施例中，步驟1203係在約攝氏二百八十度的熔化溫度以上來進行。於相同或不同的具體實施例中，步驟1203係在約攝氏三百二十度的回焊溫度處來進行。
於該較佳具體實施例中，步驟1203係在低於步驟1202的溫度處來進行，且步驟1203係在步驟1202的後面來進行。於此具體實施例中，步驟1202的高溫並不會熔化用於步驟1203中之電隔絕體結構的焊劑，或是變更該電隔絕體結構相對於該基板與該半導體晶片的位置，其可能會對該半導體結構的可靠度與電效能產生不利的影響。另外，於該較佳具體實施例中，步驟1202與1203係依序進行(而非平行進行)以便於該基板的表面上更精確地相對定位該電隔絕體結構與該等半導體晶片，以便讓該半導體結構產生改良的電效能。
於該較佳的具體實施例中，在步驟1203之後，流程圖1200會繼續進行步驟1204，其用以將該半導體晶片電耦合至該電隔絕體結構。舉例來說，參考圖5與6所述之焊線560與其它互連結構可在步驟1204期間用來將該半導體晶片的半導體裝置電耦合至該電隔絕體結構的該等電引線。
流程圖1200還包含一步驟1205，其用以將一蓋部附著至該電隔絕體結構。作為一範例，步驟1205的蓋部可能和圖7與8中的蓋部770雷同。於一具體實施例中，該蓋部會以密閉或至少粗漏的方式來密封該半導體結構內的半導體晶片。於相同或不同的具體實施例中，步驟1205可利用環氧樹脂或是其它黏著劑來將該蓋部附著至該電隔絕體結構，或是步驟1205可利用音波技術、超音波技術、熱技術、或是其它熔接技術來達到相同的目的。於一替代具體實施例中，步驟1205可將該蓋部附著至該基板的表面。於另一替代具體實施例中，步驟1205可與步驟1203同步實施或是步驟1205可在步驟1203之前先實施。
流程圖1200還額外包含一步驟1206，其用以將該半導體結構附著至一電路板。作為一範例，步驟1206的電路板可能和圖9的電路板920雷同。如圖12中所示，步驟1206可在步驟1201至1205之後才實施。
於一具體實施例中，可利用一扣件(如圖9中所示之扣件930)來將該半導體結構附著至該電路板。於相同或不同的具體實施例中，可利用一黏著劑(如圖9中之黏著劑940)來將該半導體結構中一或多條電引線附著至該電路板。當於步驟1206期間使用一黏著劑時，步驟1206可在約攝氏二百一十五度至二百二十度的焊劑熔化溫度以上來進行。於相同或不同的具體實施例中，步驟1206可在約攝氏二百四十度至二百六十度的焊劑回焊溫度處來進行。於該較佳的具體實施例，步驟1206係在低於步驟1202至1205的溫度處來進行，且步驟1206係在步驟1201至1205的後面來進行，俾使步驟1202至1205的高溫不會熔化用來將該半導體結構附著至該電路板的焊劑或是其它黏著劑。
縱上所述，本發明說明一種成本較低且具有改良可靠度的新穎高功率、射頻或是其它高頻半導體結構與半導體封裝系統。該機械性與熱性更耐用的結構與封裝系統在低成本與改良可靠度方面優於其它封裝設計。
雖然已經參考特定具體實施例來說明本發明，但熟習此項技術者將會瞭解可作各種改變而不背離本發明之精神或範疇。前面的說明中已提出此類改變之若干範例。因此，本發明具體實施例之揭示內容係希望說明本發明之範疇而並不希望起限制作用。希望本發明之範疇應僅受限於隨附申請專利範圍所需要的內容。舉例來說，熟習本技術的人士將會輕易明白，圖3與4中之電隔絕體結構340的組態、幾何、形狀與大小以及圖4、10及11中的鎖模445、1045、與1145均可各自改變，使得該些具體實施例中之特定具體實施例的前面討論未必代表所有可能具體實施例的完整說明。同樣地，半導體結構100與半導體封裝系統900中各元件的材料組成亦可能和上面詳述者不同。
任何特殊請求項中所主張的所有元件均係該特殊請求項中所主張之主要發明。因此，取代一或多個被主張之元件將構成重建作用而非補救作用。此外，前文還就特定具體實施例來對好處、其它優點及問題解決方式進行說明。儘管該等好處、優點、問題解決方式及任何元件均可產生或彰顯任何好處、優點或解決方式，但均不應視為係任何或所有申請專利範圍的關鍵、必要或基本特點或元件。
另外，本文所揭示的具體實施例及限制在下面條件下依據專屬條例並不屬於公眾所知悉者：(1)並未於申請專利範圍中明確地主張，及(2)依據均等論，申請專利範圍中的明確元件及/或限制係均等或可能均等。
100．．．半導體結構
110．．．基板
111．．．表面
112．．．表面
113．．．層
114．．．凹洞
115．．．末端
116．．．末端
120．．．半導體晶片
121．．．半導體裝置
122．．．表面
223．．．表面
230．．．黏著劑
340．．．電隔絕體結構
341．．．電引線
342．．．電引線
343．．．元件
350．．．焊接元件
444．．．金屬元件
445．．．鎖模
560．．．焊線
770．．．蓋部
880．．．空氣間隙
900．．．半導體封裝系統
910．．．封裝
920．．．電路板
930．．．扣件
940．．．黏著劑
1040．．．電隔絕體結構
1041．．．部份
1044．．．金屬元件
1045．．．鎖模
1140．．．電隔絕體結構
1141．．．部份
1142．．．部份
1144．．．金屬元件
1145．．．鎖模
1200．．．流程圖
1201．．．步驟
1202．．．步驟
1203．．．步驟
1204．．．步驟
1205．．．步驟
1206．．．步驟
讀取以上的詳細說明並結合圖式中的附圖將會更瞭解本發明，其中：圖1說明根據本發明一具體實施例的一半導體結構的俯視圖；圖2說明根據本發明一具體實施例之圖1的半導體結構的斷面圖，其係沿著圖1中的斷面線2－2看去所得者；圖3說明根據本發明一具體實施例的組裝過程的一後期步驟期間圖1的半導體結構的立體俯視圖；圖4說明根據本發明一具體實施例之圖3的半導體結構的斷面圖，其係沿著圖3中的斷面線4－4看去所得者；圖5說明根據本發明一具體實施例的組裝過程的一後期步驟期間圖3的半導體結構的俯視圖；圖6說明根據本發明一具體實施例之圖5的半導體結構的斷面圖，其係沿著圖5中的斷面線6－6看去所得者；圖7說明根據本發明一具體實施例的組裝過程的一後期步驟期間圖5的半導體結構的俯視圖；圖8說明根據本發明一具體實施例之圖7的半導體結構的斷面圖，其係沿著圖7中的斷面線8－8看去所得者；圖9說明根據本發明的一半導體封裝系統之一部分的側視圖；圖10與11說明根據本發明其它具體實施例的一電隔絕體結構的一部份的斷面圖；以及圖12說明根據本發明一具體實施例組裝一半導體結構或一半導體封裝系統的方法的流程圖。
為使說明簡單而明確，該等繪製圖僅說明一般的構造方式，並可能省略熟知特徵及技術之說明與細節以避免不必要地混淆本發明。此外，該等繪製圖式中的元件不一定係按比例繪製。舉例來說，該等圖式中部份元件的尺寸可能會相對於其它元件加以放大，以利於增進對本發明具體實施例之瞭解。不同圖式中相同的元件符號表示相同的元件。
在本說明及申請專利範圍中，若用到「第一」、「第二」、「第三」、「第四」及類似詞語的話，係用來區分雷同的元件，而不一定係用來說明特定的順序或依時間先後的順序。應瞭解，本文所使用的詞語在適當的條件下可互相交換，俾使本文所說明的本發明具體實施例能夠以非本文所解說或說明的順序來操作。再者，本文中所使用的「包括」、「包含」、「具有」等詞語及其任何其它變化詞語皆係非排外的內含用語，俾使含有一份元件清單的程序、方法、物品或設備，並不一定僅限於該些元件，而可能還包含未明確列出或此類程序、方法、物品或設備原有的其它元件。
在本說明及申請專利範圍中若用到「左方」、「右方」、「前方」、「後方」、「上方」、「下方」、「之上」、「之下」、及類似詞語的話，其僅具說明的目的，而並非用來描述永遠相對的位置。必須瞭解的係，所使用的這些詞語在適當的條件下可互相交換，俾使本文所述的本發明具體實施例亦能夠在本文所示或所述以外的其它方向中操作。除非特別定義，否則本文所使用的詞語「耦合」係定義成以電氣、機械、化學、或是其它方式直接或間接地連接。
100．．．半導體結構
110．．．基板
111．．．表面
112．．．表面
113．．．層
120．．．半導體晶片
121．．．半導體裝置
122．．．表面
223．．．表面
230．．．黏著劑
340．．．電隔絕體結構
341．．．電引線
342．．．電引線
343．．．元件
350．．．焊接元件
444．．．金屬元件
445．．．鎖模
560．．．焊線
770．．．蓋部
880．．．空氣間隙

Claims (27)

  1. 一種半導體結構，其包括：一基板，其具有一第一表面；一半導體晶片，其係位在該基板的該第一表面上；一電隔絕體結構，其係位在該基板的該第一表面上，其中該電隔絕體結構包括一電引線與一被鑄造至該電引線且以有機為主之元件；以及一焊接元件，其用以將該電隔絕體結構與該基板的第一表面耦合在一起，其中該電隔絕體結構進一步包含一金屬元件；該以有機為主之元件被鑄造至該金屬元件；該以有機為主之元件係位在該金屬元件與該電引線之間。
  2. 如請求項1之半導體結構，其中：該基板係由一導電材料所組成且會被電耦合至該半導體晶片。
  3. 如請求項1之半導體結構，其中：該金屬元件具有一面向該焊接元件之可焊表面；以及該焊接元件會被焊接至該金屬元件的該可焊表面。
  4. 如請求項1之半導體結構，其中：該金屬元件係位在該焊接元件與該電引線之間，以及該焊接元件與該以有機為主之元件之間。
  5. 如請求項1之半導體結構，其中：該以有機為主之元件會電絕緣該電引線與該金屬元 件。
  6. 如請求項1之半導體結構，其中：該金屬元件具有一面向該基板的表面，且該表面具有一第一表面積；該以有機為主之元件具有一面向該基板的表面，且該表面具有一第二表面積；以及該第一表面積小於該第二表面積。
  7. 如請求項6之半導體結構，其中：該第二表面積的一部份係該焊接元件的焊劑屏障。
  8. 如請求項1之半導體結構，其進一步包括：一黏著劑，其係位在該半導體晶片與該基板的該第一表面之間並且用以耦合兩者，其中：該焊接元件具有第一熔化溫度；以及該黏著劑具有小於該第一熔化溫度的一第二熔化溫度。
  9. 一種半導體封裝系統，其包括：一凸緣，其係由導電材料所組成且具有一第一表面；至少一半導體晶片，其具有至少一半導體裝置，該半導體裝置係位在該凸緣的該第一表面上且被電耦合至該凸緣的該第一表面，其中該至少一半導體裝置係一主動裝置；至少一匹配元件，其係位在該凸緣的該第一表面上；一第一焊接元件，其用以將該至少一半導體裝置耦合 至該凸緣的該第一表面，其中，該第一焊接元件包括一無鉛焊劑；一框架結構，其係位於該凸緣的該第一表面上，其中，該框架結構包括至少兩條電引線，一位於該等至少兩條電引線下方的基底金屬元件，以及一位在該等至少兩條電引線與該基底金屬元件之間且鑄造於其中的以有機為主之電絕緣元件；一第二焊接元件，其用以將該基底金屬元件耦合至該凸緣的該第一表面；以及複數個電互連結構，其用以將該至少一半導體裝置與該至少一匹配元件耦合至該等至少兩條電引線；以及一蓋部，其係位在該凸緣與該框架結構之上，用以於其中至少粗漏密封該至少一半導體晶片、該至少一匹配元件、以及該等電互連結構。
  10. 如請求項9之半導體封裝系統，其中：該凸緣係一用於該至少一半導體裝置的第三電引線；以及該凸緣進一步包括一金屬層，其係重疊於該導電材料，其中，該金屬層包括一由鎳與金所組成的可焊表面。
  11. 如請求項10之半導體封裝系統，其中：該基底金屬元件包括一可焊表面；以及該第二焊接元件係被焊接至該基底金屬元件的該可焊表面與該凸緣的該可焊表面。
  12. 如請求項9之半導體封裝系統，其中：該以有機為主之電絕緣元件中面向該凸緣的一表面，其具有一第一表面積；以及該基底金屬元件中面向該凸緣的一表面，其具有一小於該第一表面積的第二表面積。
  13. 如請求項12之半導體封裝系統，其中：該基底金屬元件的該表面會覆蓋該以有機為主之電絕緣元件之該表面的一第一部份；該基底金屬元件的該表面並不存在於該以有機為主之電絕緣元件之該表面的一第二部份上；以及該以有機為主之電絕緣元件之該表面的該第二部份係該第二焊接元件的一焊劑屏障。
  14. 如請求項9之半導體封裝系統，其中：該基底金屬元件具有至少一鎖模特徵。
  15. 如請求項9之半導體封裝系統，其中：該第一焊接元件具有一第一熔化溫度；以及該第二焊接元件具有小於該第一熔化溫度的一第二熔化溫度。
  16. 如請求項15之半導體封裝系統，其進一步包括：一電路板；以及一第三焊接元件，其用以將該等至少兩條電引線電耦合至該電路板，其中：該第三焊接元件具有低於該第二熔化溫度的一熔化 溫度。
  17. 如請求項9之半導體封裝系統，其中：該凸緣、該框架結構、該第二焊接元件、以及該蓋部會形成一高功率、射頻封裝的至少一部份，該高功率、射頻封裝具有至少一半導體晶片、至少一匹配元件、以及該等電互連結構位於其中之一空氣間隙。
  18. 如請求項9之半導體封裝系統，其中：該凸緣包括：一由銅所組成的導電材料；以及一由鎳與金所組成的可焊金屬層；該第一焊接元件包括金與矽；該等至少兩條電引線包括：一導電材料，其係由選自由下面組成之群中的材料所組成：銅、鎳、以及鐵；該基底金屬元件包括：一導電材料，其係由選自由下面組成之群中的材料所組成：銅、鎳、以及鐵；以及一由金與錫所組成的可焊金屬層；該以有機為主之電絕緣元件包括一聚合物；以及該第二焊接元件包括金與錫。
  19. 如請求項9之半導體封裝系統，其中：該基底金屬元件以及該等至少兩條電引線係由實質上雷同的材料所組成。
  20. 一種半導體結構，其包括： 一基板，其具有一第一表面；一半導體晶片，其係位在該基板的該第一表面上；一電隔絕體結構，其係位在該基板的該第一表面上，其中該電隔絕體結構包括一電引線與一以有機為主之元件；以及一焊接元件，其用以將該電隔絕體結構與該基板的第一表面耦合在一起，其中該以有機為主之元件包含一塑膠；且該電隔絕體結構進一步包含一金屬元件。
  21. 如請求項20之半導體結構，其中：該基板包含一導電材料且會被電耦合至該半導體晶片。
  22. 如請求項20之半導體結構，其中：該以有機為主之元件係位在該金屬元件與該電引線之間。
  23. 如請求項20之半導體結構，其中：該金屬元件包含鎖模；且該以有機為主之元件被鑄造至該金屬元件之該鎖模及該電引線。
  24. 如請求項20之半導體結構，其中：該以有機為主之元件包含一塑膠聚合物，一熱可塑性塑膠，及一熱固性塑膠之其中一者。
  25. 如請求項20之半導體結構，其中：該以有機為主之元件係位在該電引線與該基板之間。
  26. 一種半導體結構，其包括：一基板，其具有一第一表面；一半導體晶片，其係位在該基板的該第一表面上；一電隔絕體結構，其係位在該基板的該第一表面上，其中該電隔絕體結構包括一電引線與一以有機為主之元件；以及一焊接元件，其用以將該電隔絕體結構與該基板的第一表面耦合在一起；一黏著劑，其係位在該半導體晶片與該基板的該第一表面之間並且用以耦合兩者，其中：該焊接元件具有第一熔化溫度；以及該黏著劑具有小於該第一熔化溫度的一第二熔化溫度；且該以有機為主之元件包含一塑膠。
  27. 如請求項26之半導體結構，其中：該基板係由一導電材料所組成且被電耦合至該半導體晶片。
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US7446411B2 (en) 2008-11-04
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