JP2009512207A5 - - Google Patents

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Publication number
JP2009512207A5
JP2009512207A5 JP2008535104A JP2008535104A JP2009512207A5 JP 2009512207 A5 JP2009512207 A5 JP 2009512207A5 JP 2008535104 A JP2008535104 A JP 2008535104A JP 2008535104 A JP2008535104 A JP 2008535104A JP 2009512207 A5 JP2009512207 A5 JP 2009512207A5
Authority
JP
Japan
Prior art keywords
region
power semiconductor
integrated circuit
power
circuit according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008535104A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009512207A (ja
Filing date
Publication date
Priority claimed from GBGB0520909.3A external-priority patent/GB0520909D0/en
Application filed filed Critical
Publication of JP2009512207A publication Critical patent/JP2009512207A/ja
Publication of JP2009512207A5 publication Critical patent/JP2009512207A5/ja
Pending legal-status Critical Current

Links

JP2008535104A 2005-10-14 2006-10-16 パワー半導体デバイス Pending JP2009512207A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0520909.3A GB0520909D0 (en) 2005-10-14 2005-10-14 Power semiconductor devices
PCT/GB2006/003833 WO2007042834A2 (en) 2005-10-14 2006-10-16 Power semiconductor devices

Publications (2)

Publication Number Publication Date
JP2009512207A JP2009512207A (ja) 2009-03-19
JP2009512207A5 true JP2009512207A5 (enExample) 2009-12-03

Family

ID=35451744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008535104A Pending JP2009512207A (ja) 2005-10-14 2006-10-16 パワー半導体デバイス

Country Status (5)

Country Link
US (1) US20090159928A1 (enExample)
EP (1) EP1946380A2 (enExample)
JP (1) JP2009512207A (enExample)
GB (1) GB0520909D0 (enExample)
WO (1) WO2007042834A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110121387A1 (en) * 2009-11-23 2011-05-26 Francois Hebert Integrated guarded schottky diode compatible with trench-gate dmos, structure and method
US8362555B2 (en) 2009-11-24 2013-01-29 Intersil Americas Inc. Voltage converter and systems including same
US20110156682A1 (en) * 2009-12-30 2011-06-30 Dev Alok Girdhar Voltage converter with integrated schottky device and systems including same
US8492225B2 (en) * 2009-12-30 2013-07-23 Intersil Americas Inc. Integrated trench guarded schottky diode compatible with powerdie, structure and method
US20110156810A1 (en) * 2009-12-30 2011-06-30 Intersil Americas Inc. Integrated dmos and schottky
KR20120027987A (ko) * 2010-09-14 2012-03-22 삼성엘이디 주식회사 질화갈륨계 반도체소자 및 그 제조방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE430450B (sv) * 1979-04-03 1983-11-14 Asea Ab Tvapoligt overstromsskydd for inkoppling i en stromforande ledning
EP0065346A3 (en) * 1981-05-20 1983-08-31 Reliance Electric Company Semiconductor switching device
FR2566582B1 (fr) * 1984-06-22 1987-02-20 Silicium Semiconducteur Ssc Dispositif bidirectionnel de protection declenche par avalanche
FR2574594B1 (fr) * 1984-12-11 1987-01-16 Silicium Semiconducteur Ssc Structure integree de triac a commande par diac
GB2286484A (en) * 1994-02-11 1995-08-16 Fuji Electric Co Ltd Conductivity modulated semiconductor device
US5548133A (en) * 1994-09-19 1996-08-20 International Rectifier Corporation IGBT with increased ruggedness
DE19534388B4 (de) * 1994-09-19 2009-03-19 International Rectifier Corp., El Segundo IGBT-Transistorbauteil
US6064086A (en) * 1995-08-24 2000-05-16 Kabushiki Kaisha Toshiba Semiconductor device having lateral IGBT
US5874767A (en) * 1996-05-14 1999-02-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a lateral power device
JP3893185B2 (ja) * 1996-05-14 2007-03-14 三菱電機株式会社 半導体装置
JPH09326441A (ja) * 1996-06-04 1997-12-16 Toyota Autom Loom Works Ltd 半導体装置
DE19804192A1 (de) * 1998-02-03 1999-08-12 Siemens Ag Verfahren zur Herstellung eines Leistungshalbleiterbauelementes
JPH11354627A (ja) * 1998-06-05 1999-12-24 Nissan Motor Co Ltd 半導体集積回路及びその製造方法
GB9921068D0 (en) * 1999-09-08 1999-11-10 Univ Montfort Bipolar mosfet device
JP4635304B2 (ja) * 2000-07-12 2011-02-23 富士電機システムズ株式会社 双方向超接合半導体素子およびその製造方法

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