GB0520909D0 - Power semiconductor devices - Google Patents

Power semiconductor devices

Info

Publication number
GB0520909D0
GB0520909D0 GBGB0520909.3A GB0520909A GB0520909D0 GB 0520909 D0 GB0520909 D0 GB 0520909D0 GB 0520909 A GB0520909 A GB 0520909A GB 0520909 D0 GB0520909 D0 GB 0520909D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
power semiconductor
power
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0520909.3A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eco Semiconductors Ltd
Original Assignee
Eco Semiconductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eco Semiconductors Ltd filed Critical Eco Semiconductors Ltd
Priority to GBGB0520909.3A priority Critical patent/GB0520909D0/en
Publication of GB0520909D0 publication Critical patent/GB0520909D0/en
Priority to JP2008535104A priority patent/JP2009512207A/ja
Priority to PCT/GB2006/003833 priority patent/WO2007042834A2/en
Priority to US12/090,122 priority patent/US20090159928A1/en
Priority to EP06794778A priority patent/EP1946380A2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/101—Three-dimensional [3D] integrated devices comprising components on opposite major surfaces of semiconductor substrates
GBGB0520909.3A 2005-10-14 2005-10-14 Power semiconductor devices Ceased GB0520909D0 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GBGB0520909.3A GB0520909D0 (en) 2005-10-14 2005-10-14 Power semiconductor devices
JP2008535104A JP2009512207A (ja) 2005-10-14 2006-10-16 パワー半導体デバイス
PCT/GB2006/003833 WO2007042834A2 (en) 2005-10-14 2006-10-16 Power semiconductor devices
US12/090,122 US20090159928A1 (en) 2005-10-14 2006-10-16 Power semiconductor devices
EP06794778A EP1946380A2 (en) 2005-10-14 2006-10-16 Power semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0520909.3A GB0520909D0 (en) 2005-10-14 2005-10-14 Power semiconductor devices

Publications (1)

Publication Number Publication Date
GB0520909D0 true GB0520909D0 (en) 2005-11-23

Family

ID=35451744

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0520909.3A Ceased GB0520909D0 (en) 2005-10-14 2005-10-14 Power semiconductor devices

Country Status (5)

Country Link
US (1) US20090159928A1 (enExample)
EP (1) EP1946380A2 (enExample)
JP (1) JP2009512207A (enExample)
GB (1) GB0520909D0 (enExample)
WO (1) WO2007042834A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110121387A1 (en) * 2009-11-23 2011-05-26 Francois Hebert Integrated guarded schottky diode compatible with trench-gate dmos, structure and method
US8362555B2 (en) 2009-11-24 2013-01-29 Intersil Americas Inc. Voltage converter and systems including same
US20110156682A1 (en) * 2009-12-30 2011-06-30 Dev Alok Girdhar Voltage converter with integrated schottky device and systems including same
US8492225B2 (en) * 2009-12-30 2013-07-23 Intersil Americas Inc. Integrated trench guarded schottky diode compatible with powerdie, structure and method
US20110156810A1 (en) * 2009-12-30 2011-06-30 Intersil Americas Inc. Integrated dmos and schottky
KR20120027987A (ko) * 2010-09-14 2012-03-22 삼성엘이디 주식회사 질화갈륨계 반도체소자 및 그 제조방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE430450B (sv) * 1979-04-03 1983-11-14 Asea Ab Tvapoligt overstromsskydd for inkoppling i en stromforande ledning
EP0065346A3 (en) * 1981-05-20 1983-08-31 Reliance Electric Company Semiconductor switching device
FR2566582B1 (fr) * 1984-06-22 1987-02-20 Silicium Semiconducteur Ssc Dispositif bidirectionnel de protection declenche par avalanche
FR2574594B1 (fr) * 1984-12-11 1987-01-16 Silicium Semiconducteur Ssc Structure integree de triac a commande par diac
GB2286484A (en) * 1994-02-11 1995-08-16 Fuji Electric Co Ltd Conductivity modulated semiconductor device
US5548133A (en) * 1994-09-19 1996-08-20 International Rectifier Corporation IGBT with increased ruggedness
DE19534388B4 (de) * 1994-09-19 2009-03-19 International Rectifier Corp., El Segundo IGBT-Transistorbauteil
US6064086A (en) * 1995-08-24 2000-05-16 Kabushiki Kaisha Toshiba Semiconductor device having lateral IGBT
US5874767A (en) * 1996-05-14 1999-02-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a lateral power device
JP3893185B2 (ja) * 1996-05-14 2007-03-14 三菱電機株式会社 半導体装置
JPH09326441A (ja) * 1996-06-04 1997-12-16 Toyota Autom Loom Works Ltd 半導体装置
DE19804192A1 (de) * 1998-02-03 1999-08-12 Siemens Ag Verfahren zur Herstellung eines Leistungshalbleiterbauelementes
JPH11354627A (ja) * 1998-06-05 1999-12-24 Nissan Motor Co Ltd 半導体集積回路及びその製造方法
GB9921068D0 (en) * 1999-09-08 1999-11-10 Univ Montfort Bipolar mosfet device
JP4635304B2 (ja) * 2000-07-12 2011-02-23 富士電機システムズ株式会社 双方向超接合半導体素子およびその製造方法

Also Published As

Publication number Publication date
WO2007042834A2 (en) 2007-04-19
EP1946380A2 (en) 2008-07-23
JP2009512207A (ja) 2009-03-19
WO2007042834A3 (en) 2007-06-14
US20090159928A1 (en) 2009-06-25

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)