JP2009512207A - パワー半導体デバイス - Google Patents

パワー半導体デバイス Download PDF

Info

Publication number
JP2009512207A
JP2009512207A JP2008535104A JP2008535104A JP2009512207A JP 2009512207 A JP2009512207 A JP 2009512207A JP 2008535104 A JP2008535104 A JP 2008535104A JP 2008535104 A JP2008535104 A JP 2008535104A JP 2009512207 A JP2009512207 A JP 2009512207A
Authority
JP
Japan
Prior art keywords
region
power
integrated circuit
devices
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008535104A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009512207A5 (enExample
Inventor
マダチル，サンカラ，ナラヤナン，エッカナス
グリーン，デービッド，ウィリアム
Original Assignee
エコ・セミコンダクターズ・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エコ・セミコンダクターズ・リミテッド filed Critical エコ・セミコンダクターズ・リミテッド
Publication of JP2009512207A publication Critical patent/JP2009512207A/ja
Publication of JP2009512207A5 publication Critical patent/JP2009512207A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/101—Three-dimensional [3D] integrated devices comprising components on opposite major surfaces of semiconductor substrates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2008535104A 2005-10-14 2006-10-16 パワー半導体デバイス Pending JP2009512207A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0520909.3A GB0520909D0 (en) 2005-10-14 2005-10-14 Power semiconductor devices
PCT/GB2006/003833 WO2007042834A2 (en) 2005-10-14 2006-10-16 Power semiconductor devices

Publications (2)

Publication Number Publication Date
JP2009512207A true JP2009512207A (ja) 2009-03-19
JP2009512207A5 JP2009512207A5 (enExample) 2009-12-03

Family

ID=35451744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008535104A Pending JP2009512207A (ja) 2005-10-14 2006-10-16 パワー半導体デバイス

Country Status (5)

Country Link
US (1) US20090159928A1 (enExample)
EP (1) EP1946380A2 (enExample)
JP (1) JP2009512207A (enExample)
GB (1) GB0520909D0 (enExample)
WO (1) WO2007042834A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110121387A1 (en) * 2009-11-23 2011-05-26 Francois Hebert Integrated guarded schottky diode compatible with trench-gate dmos, structure and method
US8362555B2 (en) 2009-11-24 2013-01-29 Intersil Americas Inc. Voltage converter and systems including same
US20110156682A1 (en) * 2009-12-30 2011-06-30 Dev Alok Girdhar Voltage converter with integrated schottky device and systems including same
US8492225B2 (en) * 2009-12-30 2013-07-23 Intersil Americas Inc. Integrated trench guarded schottky diode compatible with powerdie, structure and method
US20110156810A1 (en) * 2009-12-30 2011-06-30 Intersil Americas Inc. Integrated dmos and schottky
KR20120027987A (ko) * 2010-09-14 2012-03-22 삼성엘이디 주식회사 질화갈륨계 반도체소자 및 그 제조방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07226511A (ja) * 1994-02-11 1995-08-22 Fuji Electric Co Ltd 半導体装置
JPH08172194A (ja) * 1994-09-19 1996-07-02 Internatl Rectifier Corp 高速ｉｇｂｔデバイス
JPH09326441A (ja) * 1996-06-04 1997-12-16 Toyota Autom Loom Works Ltd 半導体装置
JPH1065018A (ja) * 1996-05-14 1998-03-06 Mitsubishi Electric Corp 半導体装置
JPH11340246A (ja) * 1998-02-03 1999-12-10 Siemens Ag パワ―半導体デバイスの製造方法
JPH11354627A (ja) * 1998-06-05 1999-12-24 Nissan Motor Co Ltd 半導体集積回路及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE430450B (sv) * 1979-04-03 1983-11-14 Asea Ab Tvapoligt overstromsskydd for inkoppling i en stromforande ledning
EP0065346A3 (en) * 1981-05-20 1983-08-31 Reliance Electric Company Semiconductor switching device
FR2566582B1 (fr) * 1984-06-22 1987-02-20 Silicium Semiconducteur Ssc Dispositif bidirectionnel de protection declenche par avalanche
FR2574594B1 (fr) * 1984-12-11 1987-01-16 Silicium Semiconducteur Ssc Structure integree de triac a commande par diac
US5548133A (en) * 1994-09-19 1996-08-20 International Rectifier Corporation IGBT with increased ruggedness
US6064086A (en) * 1995-08-24 2000-05-16 Kabushiki Kaisha Toshiba Semiconductor device having lateral IGBT
US5874767A (en) * 1996-05-14 1999-02-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a lateral power device
GB9921068D0 (en) * 1999-09-08 1999-11-10 Univ Montfort Bipolar mosfet device
JP4635304B2 (ja) * 2000-07-12 2011-02-23 富士電機システムズ株式会社 双方向超接合半導体素子およびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07226511A (ja) * 1994-02-11 1995-08-22 Fuji Electric Co Ltd 半導体装置
JPH08172194A (ja) * 1994-09-19 1996-07-02 Internatl Rectifier Corp 高速ｉｇｂｔデバイス
JPH1065018A (ja) * 1996-05-14 1998-03-06 Mitsubishi Electric Corp 半導体装置
JPH09326441A (ja) * 1996-06-04 1997-12-16 Toyota Autom Loom Works Ltd 半導体装置
JPH11340246A (ja) * 1998-02-03 1999-12-10 Siemens Ag パワ―半導体デバイスの製造方法
JPH11354627A (ja) * 1998-06-05 1999-12-24 Nissan Motor Co Ltd 半導体集積回路及びその製造方法

Also Published As

Publication number Publication date
WO2007042834A2 (en) 2007-04-19
GB0520909D0 (en) 2005-11-23
EP1946380A2 (en) 2008-07-23
WO2007042834A3 (en) 2007-06-14
US20090159928A1 (en) 2009-06-25

Similar Documents

Publication Publication Date Title
US10157983B2 (en) Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands
JP5357370B2 (ja) 半導体デバイス
US5702961A (en) Methods of forming insulated gate bipolar transistors having built-in freewheeling diodes and transistors formed thereby
US6900518B2 (en) Semiconductor device
EP2497116B1 (en) Power semiconductor devices having selectively doped jfet regions and related methods of forming such devices
US6303410B1 (en) Methods of forming power semiconductor devices having T-shaped gate electrodes
US20150008481A1 (en) Lateral power semiconductor transistors
AU2001290068A1 (en) Semiconductor Device and Method of Forming a Semiconductor Device
US20150187877A1 (en) Power semiconductor device
KR20090083424A (ko) 래치업되지 않는 집적 절연 게이트 양극성 트랜지스터
JPH10209432A (ja) 半導体デバイスの改良
JP7749787B2 (ja) 半導体装置の駆動方法
US10490655B2 (en) Insulated gate bipolar transistor (IGBT) with high avalanche withstand
KR20140077601A (ko) 전력 반도체 소자 및 그 제조 방법
JP2000311998A (ja) 絶縁ゲートターンオフサイリスタ
JP2009512207A (ja) パワー半導体デバイス
KR20150069117A (ko) 전력 반도체 소자
KR101994728B1 (ko) 전력 반도체 소자
JP2005150348A (ja) 半導体装置
KR20150076768A (ko) 전력 반도체 소자
US11610987B2 (en) NPNP layered MOS-gated trench device having lowered operating voltage
EP4187615A1 (en) Npnp layered mos-gated trench device having lowered operating voltage
KR100555444B1 (ko) 트렌치 게이트형 전력용 반도체 소자 및 그 제조 방법
JPH09213930A (ja) Ｍｉｓｆｅｔ制御型半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091014

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20091014

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120703

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120705

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20121204